IPP80N08S2L-07 INFINEON | Alldatasheet

Document overview

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Technical content

Features

  • N-channel Logic Level - Enhancement mode
  • Automotive AEC Q101 qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green package (lead free)
  • Ultra low Rds(on)
  • 100% Avalanche tested Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current1) I D T C=25 °C, V GS=10 V 80 A T C=100 °C, V GS=10 V2) 80 Pulsed drain current2) I D,pulse T C=25 °C 320 Avalanche energy, single pulse2) E AS I D=80A 810 mJ Gate source voltage4) V GS ±20 V Power dissipation P tot T C=25 °C 300 W Operating and storage temperature T j, T stg -55 ... +175 °C Value V DS 75 V R DS(on),max (SMD version) 6.8 mΩ I D 80 A Product Summary Type Package Ordering Code Marking IPB80N08S2L-07 PG-TO263-3-2 SP0002-19051 2N08L07 IPP80N08S2L-07 PG-TO220-3-1 SP0002-19050 2N08L07 PG-TO220-3-1 PG-TO263-3-2 Rev. 1.0 page 1 2006-03-03

Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics2) Thermal resistance, junction - case R thJC - - 0.5 K/W Thermal resistance, junction - ambient, leaded R thJA -- 6 2 SMD version, device on PCB R thJA minimal footprint - - 62 6 cm2 cooling area5) -- 4 0 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D= 1 mA 75 - - V Gate threshold voltage V GS(th) V DS=V GS, I D=250 µA 1.2 1.6 2.0 Zero gate voltage drain current I DSS V DS=75 V, V GS=0 V, T j=25 °C - 0.01 1 µA V DS=75 V, V GS=0 V, T j=125 °C2) - 1 100 Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=4.5 V, I D=80 A, SMD version - 6.6 9 mΩ V GS=4.5 V, I D=80 A, SMD version - 6.3 8.7 Drain-source on-state resistance RDS(on) V GS=10 V, I D=80 A, - 5.1 7.1 m Ω V GS=10 V, I D=80 A, SMD version - 4.8 6.8 Values Rev. 1.0 page 2 2006-03-03

Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics2) Input capacitance C iss - 5400 - pF Output capacitance C oss - 1300 - Reverse transfer capacitance Crss - 590 - Turn-on delay time t d(on) -1 9- n s Rise time t r -5 5- Turn-off delay time t d(off) -8 5- Fall time t f -2 1- Gate Charge Characteristics2) Gate to source charge Q gs -1 8 2 3 n C Gate to drain charge Q gd -6 9 8 3 Gate charge total Q g - 183 233 Gate plateau voltage V plateau - 3.4 - V Reverse Diode Diode continous forward current2) I S - - 80 A Diode pulse current2) I S,pulse - - 320 Diode forward voltage V SD V GS=0 V, I F=80 A, T j=25 °C - 0.9 1.3 V Reverse recovery time2) t rr V R=40 V, I F=I S, di F/dt =100 A/µs - 95 120 ns Reverse recovery charge2) Q rr V R=40 V, I F=I S, di F/dt =100 A/µs - 240 300 nC 1) Current is limited by bondwire; with an R thJC = 0.5K/W the chip is able to carry 135A at 25°C. For detailed information see Application Note ANPS071E at www.infineon.com/optimos T C=25 °C Values V GS=0 V, V DS=25 V, f =1 MHz V DD=40 V, V GS=10 V, I D=100 A, R G=1.1 Ω V DD=60 V, I D=80 A, V GS=0 to 10 V 2) Defined by design. Not subject to production test. 3) See diagram 13 4) Qualified at -20V and +20V. 5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 3 2006-03-03

1 Power dissipation 2 Drain current

P tot = f(T C); V GS ≥ 4 V I D = f(T C); V GS ≥ 10 V 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0 Z thJC = f(t p) parameter: t p parameter: D =t p/T single pulse 0.01 0.05 0.1 0.5 10010-110-210-310-410-510-610-7 100 10-1 10-2 10-3 t p [s] Z thJC [K/W] 100 150 200 250 300 350 0 50 100 150 200 T C [°C] P tot [W] 100 0 50 100 150 200 T C [°C] I D [A] 1 µs 10 µs 100 µs 1 ms 100 1000 0.1 1 10 100 V DS [V] I D [A] Rev. 1.0 page 4 2006-03-03

5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C R DS(on) = (I D); T j = 25 °C parameter: V GS parameter: V GS 7 Typ. transfer characteristics 8 Typ. Forward transconductance I D = f(V GS); V DS = 6V g fs = f(I D); T j = 25°C parameter: T j parameter: g fs 2.5 V 3 V 3.5 V 4 V 10 V 100 150 200 250 300 02468 1 0 V DS [V] I D [A] -55 °C 25 °C 175 °C 100 120 140 160 180 200 1234 V GS [V] I D [A] 100 150 200 250 0 50 100 150 200 I D [A] g fs [S] 3 V 3.5 V 4 V 4.5 V 10 V 0 20 40 60 80 100 120 I D [A] R DS(on) [mΩ ] Rev. 1.0 page 5 2006-03-03

9 Typ. Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(ON) = f(T j) V GS(th) = f(T j); V GS = V DS parameter: I D = 80 A; VGS = 10 V parameter: I D 11 Typ. capacitances 12 Typical forward diode characteristicis C = f(V DS); V GS = 0 V; f = 1 MHz IF = f(V SD) parameter: T j 25 °C175 °C 103 102 101 100 V SD [V] I F [A] Ciss Coss Crss 104 103 102 0 5 10 15 20 25 30 V DS [V] C [pF] 250µA 1250µA 0.5 1.5 2.5 -60 -20 20 60 100 140 180 T j [°C] V GS(th) [V] -60 -20 20 60 100 140 180 T j [°C] R DS(on) [mΩ ] Rev. 1.0 page 6 2006-03-03

13 Typical avalanche energy 14 Typ. gate charge E AS = f(T j) V GS = f(Q gate); I D = 80 A pulsed parameter: I D=80A parameter: V DD 15 Typ. drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS) = f(T j); I D = 1 mA 100 200 300 400 500 600 700 800 900 25 75 125 175 T j [°C] E AS [mJ] VGS Qgate Q gs Qgd Q g VGS Qgate Q gs Qgd Q g 15V 60V 0 40 80 120 160 200 Q gate [nC] V GS [V] -60 -20 20 60 100 140 180 T j [°C] V BR(DSS) [V] Rev. 1.0 page 7 2006-03-03

St.-Martin-Straße 53 D-81541 München © Infineon Technologies AG 2004 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices, please contact your nearest Infineon Technologies Office (www.infineon.com) Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies Office. effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2006-03-03