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Technical content

Features

  • N-channel - Enhancement mode
  • AEC qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green Product (RoHS compliant)
  • 100% Avalanche tested Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T C=25 °C, V GS=10 V 64 A T C=100°C, V GS=10V1) 46 Pulsed drain current1) I D,pulse T C=25°C 256 Avalanche energy, single pulse1) E AS I D=27A 270 mJ Avalanche current, single pulse I AS - 27 A Reverse diode dv /dt dv /dt 6k V / µ s Gate source voltage V GS -± 2 0 V Power dissipation P tot T C=25°C 300 W Operating and storage temperature T j, T stg - -55 ... +175 °C IEC climatic category; DIN IEC 68-1 - - 55/175/56 Value VDS 250 V RDS(on),max 20 m ID 64 A Product Summary PG‐TO263‐3‐2 Type Package Marking IPB64N25S3-20 PG-TO263-3-2 3PN2520 Rev. 1.1 page 1 2014-09-12

Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics1), 3) Thermal resistance, junction - case R thJC -- - 0 . 5 K / W Thermal resistance, junction - ambient, leaded R thJA -- - 6 2 SMD version, device on PCB R thJA minimal footprint - - 62 6 cm2 cooling area2) -- 4 0 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0V, I D= 1mA 250 - - V Gate threshold voltage V GS(th) V DS=V GS, I D=270µA 2.0 3.0 4.0 Zero gate voltage drain current I DSS V DS=250V, V GS=0V -0 . 11 µ A V DS=250V, V GS=0V, T j=125°C2) - 10 100 Gate-source leakage current I GSS V GS=20V, V DS=0V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=10V, I D=64A - 17.5 20 m Values Rev. 1.1 page 2 2014-09-12

Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics1) Input capacitance C iss - 5240 7000 pF Output capacitance C oss - 2900 3900 Reverse transfer capacitance Crss - 85 170 Turn-on delay time t d(on) -1 8- n s Rise time t r -2 0- Turn-off delay time t d(off) -4 5- Fall time t f -1 2- Gate Charge Characteristics1) Gate to source charge Q gs -2 4 3 1 n C Gate to drain charge Q gd -1 1 2 2 Gate charge total Q g -6 7 8 9 Gate plateau voltage V plateau -4 . 8- V Reverse Diode Diode continous forward current1) I S -- 6 4 A Diode pulse current1) I S,pulse - - 256 Diode forward voltage V SD V GS=0V, I F=64A, T j=25°C -1 1 . 2 V Reverse recovery time1) t rr V R=125V, I F=50A, di F/dt =100A/µs - 174 - ns Reverse recovery charge1) Q rr - 1095 - nC Values V GS=0V, V DS=25V, f =1MHz V DD=100V, V GS=10V, I D=25A, R G=1.6 V DD=200V, I D=64A, V GS=0 to 10V 3) Devices thermal performance determined according to EIA JESD 51-14 "Transient Dual Interface Test Method For The Measurement Of The Thermal Resistance" 1) Defined by design. Not subject to production test. T C=25°C 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.1 page 3 2014-09-12

1 Power dissipation 2 Drain current

P tot = f(T C); V GS ≥ 6 V I D = f(T C); V GS ≥ 6 V; SMD 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0; SMD Z thJC = f(t p) parameter: t p parameter: D =t p/T 1 µs 10 µs 100 µs 1 ms 100 1000 0.1 1 10 100 1000 ID [A] VDS [V] single pulse 0.01 0.05 0.1 0.5 10-6 10-5 10-4 10-3 10-2 10-1 100 10-3 10-2 10-1 100 ZthJC [K/W] tp [s] 100 150 200 250 300 350 0 50 100 150 200 Ptot [W] TC [°C] 0 50 100 150 200 ID [A] TC [°C] Rev. 1.1 page 4 2014-09-12

5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C; SMD R DS(on) = f(I D); T j = 25 °C; SMD parameter: V GS parameter: V GS 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = 6V R DS(on) = f(T j); I D = 64 A; V GS = 10 V; SMD parameter: T j -60 -20 20 60 100 140 180 RDS(on) [m] Tj [°C] 5.5 V

6 V10 V

ID [A] VDS [V] 4.5 V 5 V 5.5 V 6 V 10 V 0 1 02 03 04 05 06 0 RDS(on) [m] ID [A] -55 °C 25 °C 175 °C 128 160 192 224 256 34567 ID [A] VGS [V] Rev. 1.1 page 5 2014-09-12

9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D

11 Typical forward diode characteristicis 12 Avalanche characteristics

IF = f(VSD) I A S= f(t AV) parameter: T j parameter: Tj(start) 25 °C175 °C 100 101 102 103 IF [A] VSD [V] 27 µA 270 µA 1.5 2.5 3.5 -60 -20 20 60 100 140 180 VGS(th) [V] Tj [°C] Ciss Coss Crss 102 103 104 0 50 100 150 200 250 C [pF] VDS [V] 101 25 °C 100 °C 150 °C 100 1 10 100 IAV [A] tAV [µs] 25 °C175 °C 100 101 102 103 IF [A] VSD [V] Rev. 1.1 page 6 2014-09-12

13 Avalanche energy 14 Drain-source breakdown voltage

E AS = f(T j) V BR(DSS) = f(T j); I D = 270 µA parameter: I D 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 64 A pulsed parameter: V DD V GS Q gate V gs(th) Q g(th) Q gs Q gd Q sw Q g 230 235 240 245 250 255 260 265 270 275 280 -60 -20 20 60 100 140 180 VBR(DSS) [V] Tj [°C] 80 V 200 V 02 0 4 0 6 0 8 0 VGS [V] Qgate [nC] 27 A 13.5 A 6.75 A 200 400 600 800 1000 1200 25 75 125 175 EAS [mJ] Tj [°C] Rev. 1.1 page 7 2014-09-12

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© Infineon Technologies AG 2014 All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.1 page 8 2014-09-12

Revision History

Revision 1.0 Revision 1.1 Date 2012-10-18 2014-09-12 Changes Final Data Sheet Through-hole parts removed Rev. 1.1 page 9 2014-09-12