IPB60R385CP ISC | Alldatasheet
Document overview
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- PDF pages: 2
Technical content
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark1 IscN-ChannelMOSFETTransistor IPB60R385CP
- FEATURES
- WithTo-263(D2PAK)package
- Lowinputcapacitanceandgate charge
- Lowgateinputresistance
- 100% avalanchetested
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
- APPLICATIONS
- Switching applications
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 600 V VGSS Gate-SourceVoltage ±30 V ID DrainCurrent-ContinuousTc=25℃ Tc=100℃ 9.0 5.7 A IDM DrainCurrent-SinglePulsed 27 A PD TotalDissipation@TC=25℃ 83 W Tch Max.OperatingJunctionTemperature 150 ℃ Tstg StorageTemperature -55~150 ℃
- THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-casethermalresistance 1.5 ℃/W Rth(ch-a) Channel-to-ambientthermalresistance 62 ℃/W
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark2 IscN-ChannelMOSFETTransistor IPB60R385CP ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-SourceBreakdownVoltage VGS=0V;ID=0.25mA 600 V VGS(th) GateThresholdVoltage VDS=VGS;ID=0.34mA 2.5 3.5 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=5.2A 350 385 mΩ IGSS Gate-SourceLeakageCurrent VGS= ±20V;VDS=0V ±0.1 μA IDSS Drain-SourceLeakage Current VDS=600V;VGS=0V;Tj=25℃ VDS=600V;VGS=0V;Tj=150℃ 250 μA VSDF Diodeforwardvoltage ISD=5.2A,VGS =0V 0.9 1.2 V