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Technical content

Features

  • Suitableforhardandsoftswitching(PFCandhighperformanceLLC)
  • IncreasedMOSFETdv/dtruggednessto120V/ns
  • IncreasedefficiencyduetobestinclassFOMRDS(on)*EossandRDS(on)*Qg
  • BestinclassRDS(on)/package
  • QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22) Benefits
  • IncreasedeconomiesofscalebyuseinPFCandPWMtopologiesinthe application
  • Higherdv/dtlimitenablesfasterswitchingleadingtohigherefficiency
  • Enablinghighersystemefficiencybylowerswitchinglosses
  • Increasedpowerdensitysolutionsduetosmallerpackages
  • Suitableforapplicationssuchasserver,telecomandsolar
  • Higherswitchingfrequenciespossiblewithoutlossinefficiencydueto lowEossandQg

Applications

PFCstagesandPWMstages(TTF,LLC)forhighpower/performance SMPSe.g.Computing,Server,Telecom,UPSandSolar. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 650 V RDS(on),max 180 mΩ Qg.typ 24 nC ID,pulse 45 A ID,continuous @ Tj<150°C 22 A Eoss@400V 2.7 µJ Body diode di/dt 350 A/µs Type/OrderingCode Package Marking RelatedLinks IPB60R180C7 PG-TO 263 60C7180 see Appendix A

600VCoolMOSªC7PowerTransistor IPB60R180C7 Rev.2.0,2016-03-01Final Data Sheet TableofContents

600VCoolMOSªC7PowerTransistor IPB60R180C7 Rev.2.0,2016-03-01Final Data Sheet 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Continuous drain current1) ID

8 A TC=25°C

TC=100°C Pulsed drain current2) ID,pulse - - 45 A TC=25°C Avalanche energy, single pulse EAS - - 53 mJ ID=3.3A; VDD=50V; see table 10 Avalanche energy, repetitive EAR - - 0.26 mJ ID=3.3A; VDD=50V; see table 10 Avalanche current, single pulse IAS - - 3.3 A - MOSFET dv/dt ruggedness dv/dt - - 120 V/ns VDS=0...400V Gate source voltage (static) VGS -20 - 20 V static; Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz) Power dissipation Ptot - - 68 W TC=25°C Storage temperature Tstg -55 - 150 °C - Operating junction temperature Tj -55 - 150 °C - Mounting torque - - - n.a. Ncm - Continuous diode forward current IS - - 13 A TC=25°C Diode pulse current2) IS,pulse - - 45 A TC=25°C Reverse diode dv/dt3) dv/dt - - 20 V/ns VDS=0...400V,ISD<=5.2A,Tj=25°C see table 8 Maximum diode commutation speed dif/dt - - 350 A/µs VDS=0...400V,ISD<=5.2A,Tj=25°C see table 8 Insulation withstand voltage VISO - - n.a. V Vrms,TC=25°C,t=1min 1) Limited by Tj max. 2) Pulse width tp limited by Tj,max 3) Identical low side and high side switch

600VCoolMOSªC7PowerTransistor IPB60R180C7 Rev.2.0,2016-03-01Final Data Sheet 2Thermalcharacteristics Table3Thermalcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - case RthJC - - 1.832 °C/W - Thermal resistance, junction - ambient RthJA - - 62 °C/W device on PCB, minimal footprint Thermal resistance, junction - ambient for SMD version RthJA - 35 45 °C/W Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70µm thickness) copper area for drain connection and cooling. PCB is vertical without air stream cooling. Soldering temperature, wave- & reflow soldering allowed Tsold - - 260 °C reflow MSL1

600VCoolMOSªC7PowerTransistor IPB60R180C7 Rev.2.0,2016-03-01Final Data Sheet 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 600 - - V VGS=0V,ID=1mA Gate threshold voltage V(GS)th 3 3.5 4 V VDS=VGS,ID=0.26mA Zero gate voltage drain current IDSS - µA VDS=600,VGS=0V,Tj=25°C VDS=600,VGS=0V,Tj=150°C Gate-source leakage current IGSS - - 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) 0.155 0.346 0.180 - Ω VGS=10V,ID=5.3A,Tj=25°C VGS=10V,ID=5.3A,Tj=150°C Gate resistance RG - 0.85 - Ω f=1MHz,opendrain Table5Dynamiccharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance Ciss - 1080 - pF VGS=0V,VDS=400V,f=250kHz Output capacitance Coss - 18 - pF VGS=0V,VDS=400V,f=250kHz Effective output capacitance, energy related1) Co(er) - 34 - pF VGS=0V,VDS=0...400V Effective output capacitance, time related2) Co(tr) - 349 - pF ID=constant,VGS=0V,VDS=0...400V Turn-on delay time td(on) - 9.3 - ns VDD=400V,VGS=13V,ID=5.3A, RG=10Ω ;seetable9 Rise time tr - 7 - ns VDD=400V,VGS=13V,ID=5.3A, RG=10Ω ;seetable9 Turn-off delay time td(off) - 50 - ns VDD=400V,VGS=13V,ID=5.3A, RG=10Ω ;seetable9 Fall time tf - 6 - ns VDD=400V,VGS=13V,ID=5.3A, RG=10Ω ;seetable9 Table6Gatechargecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs - 5 - nC VDD=400V,ID=5.3A,VGS=0to10V Gate to drain charge Qgd - 8 - nC VDD=400V,ID=5.3A,VGS=0to10V Gate charge total Qg - 24 - nC VDD=400V,ID=5.3A,VGS=0to10V Gate plateau voltage Vplateau - 5.0 - V VDD=400V,ID=5.3A,VGS=0to10V 1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V 2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V

600VCoolMOSªC7PowerTransistor IPB60R180C7 Rev.2.0,2016-03-01Final Data Sheet Table7Reversediodecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Diode forward voltage VSD - 0.9 - V VGS=0V,IF=5.3A,Tj=25°C Reverse recovery time trr - 280 - ns VR=400V,IF=5.3A,diF/dt=100A/µs; see table 8 Reverse recovery charge Qrr - 2.6 - µC VR=400V,IF=5.3A,diF/dt=100A/µs; see table 8 Peak reverse recovery current Irrm - 21 - A VR=400V,IF=5.3A,diF/dt=100A/µs; see table 8

600VCoolMOSªC7PowerTransistor IPB60R180C7 Rev.2.0,2016-03-01Final Data Sheet 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation TC[°C] Ptot[W] 100 125 150 Ptot=f(TC) Diagram2:Safeoperatingarea VDS[V] ID[A] 100 101 102 103 10-3 10-2 10-1 100 101 102 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram3:Safeoperatingarea VDS[V] ID[A] 100 101 102 103 10-3 10-2 10-1 100 101 102 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=80°C;D=0;parameter:tp Diagram4:Max.transientthermalimpedance tp[s] ZthJC[K/W] 10-5 10-4 10-3 10-2 10-1 10-2 10-1 100 101 0.5 0.2 0.1 0.05 0.02 0.01 single pulse ZthJC=f(tP);parameter:D=tp/T

600VCoolMOSªC7PowerTransistor IPB60R180C7 Rev.2.0,2016-03-01Final Data Sheet Diagram5:Typ.outputcharacteristics VDS[V] ID[A] 20 V 10 V 8 V 7 V 6 V 5.5 V 5 V 4.5 V ID=f(VDS);Tj=25°C;parameter:VGS Diagram6:Typ.outputcharacteristics VDS[V] ID[A] 20 V 10 V 8 V 7 V 6 V 5.5 V 5 V 4.5 V ID=f(VDS);Tj=125°C;parameter:VGS Diagram7:Typ.drain-sourceon-stateresistance ID[A] RDS(on)[Ω ] 0.33 0.35 0.37 0.39 0.41 0.43 0.45 0.47 0.49 0.51 0.53 20 V 5.5 V 6 V 6.5 V 7 V 10 V RDS(on)=f(ID);Tj=125°C;parameter:VGS Diagram8:Drain-sourceon-stateresistance Tj[°C] RDS(on)[Ω ] -50 -25 100 125 150 0.08 0.13 0.18 0.23 0.28 0.33 0.38 0.43 98% typ RDS(on)=f(Tj);ID=5.3A;VGS=10V

600VCoolMOSªC7PowerTransistor IPB60R180C7 Rev.2.0,2016-03-01Final Data Sheet Diagram9:Typ.transfercharacteristics VGS[V] ID[A] 150 °C 25 °C ID=f(VGS);VDS=20V;parameter:Tj Diagram10:Typ.gatecharge Qgate[nC] VGS[V] 400 V 120 V VGS=f(Qgate);ID=5.3Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode VSD[V] IF[A] 0.00 0.20 0.40 0.60 0.80 1.00 1.20 1.40 1.60 1.80 2.00 10-1 100 101 102 125 °C 25 °C IF=f(VSD);parameter:Tj Diagram12:Avalancheenergy Tj[°C] EAS[mJ] 100 125 150 EAS=f(Tj);ID=3.3A;VDD=50V

600VCoolMOSªC7PowerTransistor IPB60R180C7 Rev.2.0,2016-03-01Final Data Sheet Diagram13:Drain-sourcebreakdownvoltage Tj[°C] VBR(DSS)[V] -60 -30 120 150 520 540 560 580 600 620 640 660 680 700 VBR(DSS)=f(Tj);ID=1mA Diagram14:Typ.capacitances VDS[V] C[pF] 100 200 300 400 10-1 100 101 102 103 104 105 Ciss Coss Crss C=f(VDS);VGS=0V;f=250kHz Diagram15:Typ.Cossstoredenergy VDS[V] Eoss[µJ] 100 200 300 400 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Eoss=f(VDS)

600VCoolMOSªC7PowerTransistor IPB60R180C7 Rev.2.0,2016-03-01Final Data Sheet 5TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform t V ,I Irrm IF VDS 10 %Irrm trr tF tS QF QS dIF / dt dIrr / dt VDS(peak) Qrr = QF +QS trr =tF +tS VDS IF VDS IF Rg1 Rg 2 Rg1 = Rg 2 Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS VGS td(on) td(off)tr ton tf toff 10% 90% VDS VGS Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform VDS V(BR)DS ID VDS VDSID

600VCoolMOSªC7PowerTransistor IPB60R180C7 Rev.2.0,2016-03-01Final Data Sheet 6PackageOutlines Figure1OutlinePG-TO263,dimensionsinmm/inches

600VCoolMOSªC7PowerTransistor IPB60R180C7 Rev.2.0,2016-03-01Final Data Sheet 7AppendixA Table11RelatedLinks

  • IFXCoolMOSTMC7Webpage:www.infineon.com
  • IFXCoolMOSTMC7applicationnote:www.infineon.com
  • IFXCoolMOSTMC7simulationmodel:www.infineon.com
  • IFXDesigntools:www.infineon.com

600VCoolMOSªC7PowerTransistor IPB60R180C7 Rev.2.0,2016-03-01Final Data Sheet RevisionHistory IPB60R180C7 Revision:2016-03-01,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2016-03-01 Release of final version TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2016InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.