IPB407N30N_15 INFINEON | Alldatasheet

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MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTMPower-Transistor,300V IPB407N30N DataSheet Rev.2.0 Final PowerManagement&Multimarket

OptiMOSTMPower-Transistor,300V IPB407N30N Rev.2.0,2014-12-27Final Data Sheet D²PAK Drain Pin 2, Tab Gate Pin 1 Source Pin 3 1Description

Features

  • N-channel,normallevel
  • FastDiodewithreducedQrr
  • Optimizedforhardcommutationruggedness
  • Verylowon-resistanceRDS(on)
  • 175°Coperatingtemperature
  • Pb-freeleadplating;RoHScompliant
  • QualifiedaccordingtoJEDEC1)fortargetapplication
  • Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 300 V RDS(on),max 40.7 mΩ ID 44 A Type/OrderingCode Package Marking RelatedLinks IPB407N30N PG-TO 263-3 407N30N - 1) J-STD20 and JESD22

OptiMOSTMPower-Transistor,300V IPB407N30N Rev.2.0,2014-12-27Final Data Sheet TableofContents

OptiMOSTMPower-Transistor,300V IPB407N30N Rev.2.0,2014-12-27Final Data Sheet 2Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Continuous drain current ID

34 A TC=25°C

TC=100°C Pulsed drain current1) ID,pulse - - 176 A TC=25°C Avalanche energy, single pulse EAS - - 240 mJ ID=22A,RGS=50Ω Reversediodepeakdv/dt dv/dt - - 60 kV/µs ID=44A,VDS=150V, di/dt=1000A/µs,Tj,max=175°C Gate source voltage VGS -20 - 20 V - Diode hard commutation destructive current2) Ptot - - 300 W TC=25°C Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category; DIN IEC 68-1: 55/175/56 3Thermalcharacteristics Table3Thermalcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - case3) RthJC - 0.3 0.5 K/W - Thermal resistance, junction - ambient, minimal footprint RthJA - - 62 K/W - Thermal resistance, junction - ambient, 6 cm2 cooling area4) RthJA - - 40 K/W - 1) See figure 3 2) Diode pulse current is defined by thermal and/or package limits 3) Defined by design. Not subject to production test. 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.

OptiMOSTMPower-Transistor,300V IPB407N30N Rev.2.0,2014-12-27Final Data Sheet 4Electricalcharacteristics Table4Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 300 - - V VGS=0V,ID=1mA Gate threshold voltage VGS(th) 2 3 4 V VDS=VGS,ID=270µA Zero gate voltage drain current IDSS 300 µA VDS=240V,VGS=0V,Tj=25°C VDS=240V,VGS=0V,Tj=125°C Gate-source leakage current IGSS - 1 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 36 40.7 mΩ VGS=10V,ID=44A Gate resistance1) RG - 2.4 3.6 Ω - Transconductance gfs 52 103 - S |VDS|>2|ID|RDS(on)max,ID=44A Table5Dynamiccharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance1) Ciss - 5400 7180 pF VGS=0V,VDS=100V,f=1MHz Output capacitance1) Coss - 281 374 pF VGS=0V,VDS=100V,f=1MHz Reverse transfer capacitance1) Crss - 6 13 pF VGS=0V,VDS=100V,f=1MHz Turn-on delay time td(on) - 16 - ns VDD=100V,VGS=10V,ID=22A, RG,ext=1.6Ω Rise time tr - 9 - ns VDD=100V,VGS=10V,ID=22A, RG,ext=1.6Ω Turn-off delay time td(off) - 43 - ns VDD=100V,VGS=10V,ID=22A, RG,ext=1.6Ω Fall time tf - 9 - ns VDD=100V,VGS=10V,ID=22A, RG,ext=1.6Ω Table6Gatechargecharacteristics2) Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs - 24 - nC VDD=100V,ID=44A,VGS=0to10V Gate to drain charge Qgd - 7 - nC VDD=100V,ID=44A,VGS=0to10V Switching charge Qsw - 15 - nC VDD=100V,ID=44A,VGS=0to10V Gate charge total1) Qg - 65 87 nC VDD=100V,ID=44A,VGS=0to10V Gate plateau voltage Vplateau - 4.4 - V VDD=100V,ID=44A,VGS=0to10V Output charge Qoss - 131 - nC VDD=100V,VGS=0V 1) Defined by design. Not subject to production test. 2) See ″Gate charge waveforms″ for parameter definition

OptiMOSTMPower-Transistor,300V IPB407N30N Rev.2.0,2014-12-27Final Data Sheet Table7Reversediode Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Diode continous forward current IS - - 44 A TC=25°C Diode pulse current1) IS,pulse - - 176 A TC=25°C Diode hard commutation current2) IS,hard - - 44 A TC=25°C,diF/dt=1000A/µs Diode forward voltage VSD - 0.9 1.2 V VGS=0V,IF=44A,Tj=25°C Reverse recovery time3) trr - 152 304 ns VR=100V,IF=32.2A,diF/dt=100A/µs Reverse recovery charge3) Qrr - 844 1689 nC VR=100V,IF=32.2A,diF/dt=100A/µs 1) Diode pulse current is defined by thermal and/or package limits 2) Maximum allowed hard-commutated current through diode at di/dt=1000 A/µs 3) Defined by design. Not subject to production test.

OptiMOSTMPower-Transistor,300V IPB407N30N Rev.2.0,2014-12-27Final Data Sheet 5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation TC[°C] Ptot[W] 100 150 200 100 150 200 250 300 350 Ptot=f(TC) Diagram2:Draincurrent TC[°C] ID[A] 100 150 200 ID=f(TC);VGS>=10V Diagram3:Safeoperatingarea VDS[V] ID[A] 10-1 100 101 102 103 10-1 100 101 102 103 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram4:Max.transientthermalimpedance tp[s] ZthJC[K/W] 10-5 10-4 10-3 10-2 10-1 100 10-2 10-1 100 0.5 0.2 0.1 0.05 0.02 0.01 single pulse ZthJC=f(tp);parameter:D=tp/T

OptiMOSTMPower-Transistor,300V IPB407N30N Rev.2.0,2014-12-27Final Data Sheet Diagram5:Typ.outputcharacteristics VDS[V] ID[A] 100 10 V 8 V 5 V ID=f(VDS);Tj=25°C;parameter:VGS Diagram6:Typ.drain-sourceonresistance ID[A] RDS(on)[mΩ ] 6 V 8 V 10 V RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics VGS[V] ID[A] 175 °C 25 °C ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Diagram8:Typ.forwardtransconductance ID[A] gfs[S] 100 125 150 gfs=f(ID);Tj=25°C

OptiMOSTMPower-Transistor,300V IPB407N30N Rev.2.0,2014-12-27Final Data Sheet Diagram9:Drain-sourceon-stateresistance Tj[°C] RDS(on)[mΩ ] -60 -20 100 140 180 100 120 98% typ RDS(on)=f(Tj);ID=44A;VGS=10V Diagram10:Typ.gatethresholdvoltage Tj[°C] VGS(th)[V] -60 -10 140 190 2700 µA 270 µA VGS(th)=f(Tj);VGS=VDS;parameter:ID Diagram11:Typ.capacitances VDS[V] C[pF] 100 150 200 250 100 101 102 103 104 Ciss Coss Crss C=f(VDS);VGS=0V;f=1MHz Diagram12:Forwardcharacteristicsofreversediode VSD[V] IF[A] 0.0 0.5 1.0 1.5 2.0 100 101 102 103 25 °C 175 °C 25°C, 98% 175°C, 98% IF=f(VSD);parameter:Tj

OptiMOSTMPower-Transistor,300V IPB407N30N Rev.2.0,2014-12-27Final Data Sheet Diagram13:Avalanchecharacteristics tAV[µs] IAS[A] 100 101 102 103 100 101 102 25 °C 100 °C 125 °C IAS=f(tAV);RGS=25Ω ;parameter:Tj(start) Diagram14:Typ.gatecharge Qgate[nC] VGS[V] 240 V 150 V 60 V VGS=f(Qgate);ID=44Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Tj[°C] VBR(DSS)[V] -60 -20 100 140 180 280 290 300 310 320 330 340 VBR(DSS)=f(Tj);ID=1mA Gate charge waveforms

OptiMOSTMPower-Transistor,300V IPB407N30N Rev.2.0,2014-12-27Final Data Sheet 6PackageOutlines Figure1OutlinePG-TO263-3,dimensionsinmm/inches

OptiMOSTMPower-Transistor,300V IPB407N30N Rev.2.0,2014-12-27Final Data Sheet RevisionHistory IPB407N30N Revision:2014-12-27,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2014-12-27 Release of final version WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2014InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.