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Technical content

Features

  • N-channel, normal level
  • Excellent gate charge x R DS(on) product (FOM)
  • Very low on-resistance R DS(on)
  • 175 °C operating temperature
  • Pb-free lead plating; RoHS compliant
  • Qualified according to JEDEC1) for target application
  • Ideal for high-frequency switching and synchronous rectification
  • Halogen-free according to IEC61249-2-21 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T C=25 °C 50 A T C=100 °C 40 Pulsed drain current2) I D,pulse T C=25 °C 200 Avalanche energy, single pulse E AS I D=50 A, R GS=25 W 170 mJ Reverse diode dv /dt dv /dt I D=50 A, V DS=120 V, di /dt =100 A/µs, T j,max=175 °C 6 kV/µs Gate source voltage V GS ±20 V Power dissipation P tot T C=25 °C 150 W Operating and storage temperature T j, T stg -55 ... 175 °C IEC climatic category; DIN IEC 68-1 55/175/56 Value 1)J-STD20 and JESD22 2) See figure 3 VDS 150 V RDS(on),max 20 mW ID 50 A Product Summary Type IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G IPP200N15N3 G Marking 200N15N 200N15N 200N15N 200N15N Rev. 2.07 page 1 2014-01-09

IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G IPP200N15N3 G Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R thJC - - 1 K/W R thJA minimal footprint - - 75 6 cm2 cooling area3) - - 50 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 150 - - V Gate threshold voltage V GS(th) V DS=V GS, I D=90 µA 2 3 4 Zero gate voltage drain current I DSS V DS=120 V, V GS=0 V, T j=25 °C - 0.1 1 µA V DS=120 V, V GS=0 V, T j=125 °C - 10 100 Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=50 A - 16 20 mW V GS=8 V, I D=25 A - 16 20 Gate resistance R G - 2.4 - W Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=50 A 29 57 - S Values Thermal resistance, junction - ambient 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.07 page 2 2014-01-09

IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G IPP200N15N3 G Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 1820 - pF Output capacitance C oss - 214 - Reverse transfer capacitance C rss - 5 - Turn-on delay time t d(on) - 14 21 ns Rise time t r - 11 17 Turn-off delay time t d(off) - 23 35 Fall time t f - 6 9 Gate Charge Characteristics4) Gate to source charge Q gs - 10 14 nC Gate to drain charge Q gd - 4 6 Switching charge Q sw - 9 13 Gate charge total Q g - 23 31 Gate plateau voltage V plateau - 5.7 - V Output charge Q oss V DD=75 V, V GS=0 V - 60 79 nC Reverse Diode Diode continous forward current I S - - 50 A Diode pulse current I S,pulse - - 220 Diode forward voltage V SD V GS=0 V, I F=50 A, T j=25 °C - 1 1.2 V Reverse recovery time t rr - 106 - ns Reverse recovery charge Q rr - 332 - nC 4) See figure 16 for gate charge parameter definition V R=75 V, I F=I S, di F/dt =100 A/µs T C=25 °C Values V GS=0 V, V DS=75 V, f =1 MHz V DD=75 V, V GS=10 V, I D=50 A, R G,ext=1.6 W V DD=75 V, I D=50 A, V GS=0 to 10 V Rev. 2.07 page 3 2014-01-09

IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G IPP200N15N3 G

1 Power dissipation 2 Drain current

P tot=f(T C) I D=f(T C); V GS≥10 V 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10-5 10-4 10-3 10-2 10-1 100 10-2 10-1 100 101 ZthJC [K/W] tp [s] 120 160 0 50 100 150 200 Ptot [W] TC [°C] 0 50 100 150 200 ID [A] TC [°C] 1 µs 10 µs 100 µs 1 ms 10 ms DC 10-1 100 101 102 103 10-1 100 101 102 103 ID [A] VDS [V] Rev. 2.07 page 4 2014-01-09

IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G IPP200N15N3 G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 5 V 5.5 V 6 V 8 V 10 V 0 20 40 60 80 RDS(on) [mW] ID [A] 25 °C 175 °C 100 0 2 4 6 8 ID [A] VGS [V] 100 0 40 80 120 160 gfs [S] ID [A] 4.5 V 5 V 5.5 V 6 V

6.5 V 7 V

ID [A] VDS [V] Rev. 2.07 page 5 2014-01-09

IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G IPP200N15N3 G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=50 A; V GS=10 V V GS(th)=f(T j); V GS=V DS parameter: I D 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j typ 98% -60 -20 20 60 100 140 180 RDS(on) [mW] Tj [°C] 90 µA 900 µA 0.5 1.5 2.5 3.5 -60 -20 20 60 100 140 180 VGS(th) [V] Tj [°C] Ciss Coss Crss 101 102 103 104 0 20 40 60 80 100 C [pF] VDS [V] 25 °C 175 °C 25°C, 98% 175°C, 98% 100 101 102 103 0 0.5 1 1.5 2 IF [A] VSD [V] Rev. 2.07 page 6 2014-01-09

IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G IPP200N15N3 G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=50A pulsed parameter: T j(start) parameter: V DD

15 Drain-source breakdown voltage 16 Gate charge waveforms

V BR(DSS)=f(T j); I D=1 mA 30 V 75 V 120 V 0 10 20 30 VGS [V] Qgate [nC] 135 140 145 150 155 160 165 170 -60 -20 20 60 100 140 180 VBR(DSS) [V] Tj [°C] V GS Q gate V gs(th) Q g(th) Q gs Q gd Q sw Q g 25 °C 100 °C 125 °C 100 1 10 100 1000 IAS [A] tAV [µs] Rev. 2.07 page 7 2014-01-09

IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G IPP200N15N3 G PG-TO263-3 Outline Rev. 2.07 page 8 2014-01-09

IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G IPP200N15N3 G PG-TO252-3 Outline Rev. 2.07 page 9 2014-01-09

IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G IPP200N15N3 G PG-TO262-3 Outline Rev. 2.07 page 10 2014-01-09

IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G IPP200N15N3 G PG-TO220-3 Outline Rev. 2.07 page 11 2014-01-09

IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G IPP200N15N3 G Published by Infineon Technologies AG

81726 Munich, Germany

© 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.07 page 12 2014-01-09