IPB180P04P4L-02 INFINEON | Alldatasheet

Document overview

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Technical content

Features

  • P-channel - Logic Level - Enhancement mode
  • AEC qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green Product (RoHS compliant)
  • 100% Avalanche tested
  • Intended for reverse battery protection Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T C=25°C, V GS=-10V1) -180 A T C=100°C, V GS=-10V2) -140 Pulsed drain current2) I D,pulse T C=25°C -720 Avalanche energy, single pulse E AS I D= -90A 84 mJ Avalanche current, single pulse I AS - -180 A Gate source voltage V GS - ±163) V Power dissipation P tot T C=25°C 150 W Operating and storage temperature T j, T stg - -55 ... +175 °C IEC climatic category; DIN IEC 68-1 - - 55/175/56 Value V DS -40 V R DS(on),max 2.4 mW I D -180 A Product Summary PG-TO263-7-3 Type Package Marking IPB180P04P4L-02 PG-TO263-7-3 4QP04L02 Drain Pin 4, Tab Source Pin 2, 3, 5, 6, 7 Gate Pin 1 Rev. 1.3 page 1 2011-04-27

Final Data Sheet IPB180P04P4L-02 Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics2) Thermal resistance, junction - case R thJC - - - 1 K/W SMD version, device on PCB R thJA minimal footprint - - 62 6 cm2 cooling area4) - - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0V, I D= -1mA -40 - - V Gate threshold voltage V GS(th) V DS=V GS, I D=-410µA -1.2 -1.7 -2.2 Zero gate voltage drain current I DSS V DS=-32V, V GS=0V, V DS=-32V, V GS=0V, Gate-source leakage current I GSS V GS=-16V, V DS=0V - - -100 nA Drain-source on-state resistance R DS(on) V GS=-4.5V, I D=-100A - 2.6 3.9 mW Values Rev. 1.3 page 2 2011-04-27

Final Data Sheet IPB180P04P4L-02 Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics2) Input capacitance C iss - 14400 18700 pF Output capacitance C oss - 4570 5900 Reverse transfer capacitance Crss - 180 360 Turn-on delay time t d(on) - 32 - ns Rise time t r - 28 - Turn-off delay time t d(off) - 146 - Fall time t f - 119 - Gate Charge Characteristics2) Gate to source charge Q gs - 50 65 nC Gate to drain charge Q gd - 38 76 Gate charge total Q g - 220 286 Gate plateau voltage V plateau - -3.5 - V Reverse Diode Diode continous forward current2) I S - - -180 A Diode pulse current2) I S,pulse - - -720 Diode forward voltage V SD V GS=0V, I F=-100A, Reverse recovery time2) t rr V R=-20V, I F=-50A, di F/dt =-100A/µs - 71 - ns Reverse recovery charge2) Q rr - 101 - nC T C=25°C Values V GS=0V, V DS=-25V, f =1MHz V DD=-20V, V GS=-10V, I D=-180A, R G=3.5W V DD=-32 V, I D=-180 A, V GS=0 to -10 V 2) Specified by design. Not subject to production test. 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 1) Current is limited by bondwire; with an R thJC = 1K/W the chip is able to carry 200A at 25°C. 3) VGS=+5V/-16V according AEC; VGS=+16V for max 168h at TJ=175°C Rev. 1.3 page 3 2011-04-27

Final Data Sheet IPB180P04P4L-02

1 Power dissipation 2 Drain current

P tot = f(T C); V GS ≤ -6V I D = f(T C); V GS ≤ -6V 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0 Z thJC = f(t p) parameter: t p parameter: D =t p/T 1 µs 10 µs 100 µs 1 ms 100 1000 0.1 1 10 100 -V DS [V] -I D [A] single pulse 0.01 0.05 0.1 0.5 10-6 10-5 10-4 10-3 10-2 10-1 100 10-3 10-2 10-1 100 101 t p [s] Z thJC [K/W] 100 120 140 160 0 50 100 150 200 T C [°C] P tot [W] 100 110 120 130 140 150 160 170 180 190 200 0 50 100 150 200 T C [°C] -I D [A] Rev. 1.3 page 4 2011-04-27

Final Data Sheet IPB180P04P4L-02 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25°C R DS(on) = f(I D); T j = 25°C parameter: V GS parameter: V GS 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = -6V R DS(on) = f(T j); I D = -100A; V GS = -10V parameter: T j 1.5 2.5 -60 -20 20 60 100 140 180 T j [°C] R DS(on) [mW] -3 V -3.5 V -4 V -4.5 V -5 V -10 V 100 200 300 400 500 600 700 0 1 2 3 4 5 6 -V DS [V] -I D [A] -2.8 V -3 V -3.5 V -4 V -4.5 V -10 V 0 50 100 150 -I D [A] R DS(on) [mW] -55 °C25 °C 175 °C 100 200 300 400 500 600 700 0 1 2 3 4 5 6 -V GS [V] -I D [A] Rev. 1.3 page 5 2011-04-27

Final Data Sheet IPB180P04P4L-02 9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D

11 Typical forward diode characteristicis 12 Drain-source breakdown voltage

IF = f(VSD) V BR(DSS) = f(T j); I D = -1mA parameter: T j 25 °C 175 °C 103 102 101 100 -V SD [V] -I F [A] -410µA -4100µA 0.75 1.25 1.5 1.75 2.25 -60 -20 20 60 100 140 180 T j [°C] -V GS(th) [V] Ciss Coss Crss 103 101 104104 103 102 101 0 5 10 15 20 25 30 35 40 -V DS [V] C [pF] -60 -20 20 60 100 140 180 T j [°C] -V BR(DSS) [V] Rev. 1.3 page 6 2011-04-27

Final Data Sheet IPB180P04P4L-02 13 Typ. gate charge 14 Gate charge waveforms V GS = f(Q gate); I D = -180A pulsed parameter: V DD -32V -8V 0 50 100 150 200 Q gate [nC] -V GS [V] V GS Qgate Q gs Qgd Q g V GS Qgate Q gs Qgd Q g Rev. 1.3 page 7 2011-04-27

Final Data Sheet IPB180P04P4L-02 Published by Infineon Technologies AG

81726 Munich, Germany

© Infineon Technologies AG 2011 All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.3 page 8 2011-04-27

Final Data Sheet IPB180P04P4L-02

Revision History

1.1 1.1 1.2 1.2 1.2 1.3 Date 02.09.2009 02.09.2009 07.10.2009 07.10.2009 07.10.2009 27.04.2011 VSD: ID changed to 80A Changes RDS(on)@4.5V: Id changed to 135A Final Data Sheet VGS(th): ID changed to 410uA RDS(on)@4.5V: ID changed to 80A RDS(on)@10V: ID changed to 80A Rev. 1.3 page 9 2011-04-27