IPB180N04S4L-H0 INFINEON | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 9
Technical content
Features
- N-channel Logic Level - Enhancement mode
- AEC qualified
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- Green product (RoHS compliant)
- 100% Avalanche tested Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T C=25°C, V GS=10V1) 180 A T C=100 °C, V GS=10 V2) 180 Pulsed drain current2) I D,pulse T C=25 °C 720 Avalanche energy, single pulse E AS I D=90 A 850 mJ Avalanche current, single pulse I AS - 180 A Gate source voltage V GS - +20/-16 V Power dissipation P tot T C=25 °C 250 W Operating and storage temperature T j, T stg - -55 ... +175 °C IEC climatic category; DIN IEC 68-1 - - 55/175/56 Value VDS 40 V RDS(on) 1.0 mΩ ID 180 A Product Summary PG-TO263-7-3 Type Package Marking IPB180N04S4L-H0 PG-TO263-7-3 4N04LH0 Rev. 1.0 page 1 2013-05-27
Data Sheet IPB180N04S4L-H0 Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics2) Thermal resistance, junction - case R thJC -- - 0 . 6 K / W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D= 1 mA 40 - - V Gate threshold voltage V GS(th) V DS=V GS, I D=180 µA 1.2 1.7 2.2 Zero gate voltage drain current I DSS V DS=40 V, V GS=0 V, T j=25 °C -0 . 0 81 µ A V DS=18 V, V GS=0 V, T j=85 °C2) -1 2 0 Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=4.5 V, I D=50 A -1 . 1 1 . 4 mΩ V GS=10 V, I D=100 A -0 . 8 1 . 0 Values Rev. 1.0 page 2 2013-05-27
Data Sheet IPB180N04S4L-H0 Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics2) Input capacitance C iss - 18800 24440 pF Output capacitance C oss - 3070 3990 Reverse transfer capacitance Crss - 160 370 Turn-on delay time t d(on) -2 5- n s Rise time t r -3 0- Turn-off delay time t d(off) - 120 - Fall time t f - 100 - Gate Charge Characteristics2) Gate to source charge Q gs -5 2 6 8 n C Gate to drain charge Q gd -2 6 6 0 Gate charge total Q g - 239 310 Gate plateau voltage V plateau -2 . 8- V Reverse Diode Diode continous forward current2) I S - - 180 A Diode pulse current2) I S,pulse - - 720 Diode forward voltage V SD V GS=0 V, I F=100 A, T j=25 °C -0 . 9 1 . 3 V Reverse recovery time2) t rr -8 0- n s Reverse recovery charge2) Q rr - 130 - nC Values V GS=0 V, V DS=25 V, f =1 MHz V DD=20 V, V GS=10 V, I D=180 A, R G=3.5 Ω V DD=32 V, I D=180 A, V GS=0 to 10 V 2) Defined by design. Not subject to production test. 1) Current is limited by bondwire; with an R thJC = 0.6 K/W the chip is able to carry 380A at 25°C. V R=20 V, I F=50A, di F/dt =100 A/µs T C=25 °C Rev. 1.0 page 3 2013-05-27
Data Sheet IPB180N04S4L-H0
1 Power dissipation 2 Drain current
P tot = f(T C); V GS ≥ 6 V I D = f(T C); V GS ≥ 6 V 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0 Z thJC = f(t p) parameter: t p parameter: D =t p/T 1 µs 10 µs 100 µs 1 ms 100 1000 0.1 1 10 100 ID [A] VDS [V] single pulse 0.01 0.05 0.1 0.5 10-6 10-5 10-4 10-3 10-2 10-1 100 10-3 10-2 10-1 100 ZthJC [K/W] tp [s] 100 150 200 250 300 0 50 100 150 200 Ptot [W] TC [°C] 120 160 200 0 50 100 150 200 ID [A] TC [°C] Rev. 1.0 page 4 2013-05-27
Data Sheet IPB180N04S4L-H0 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C R DS(on) = (I D); T j = 25 °C parameter: V GS parameter: V GS 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = 6V R DS(on) = f(T j); I D = 100 A; V GS = 10 V parameter: T j 0.5 0.75 1.25 1.5 -60 -20 20 60 100 140 180 RDS(on) [mΩ] Tj [°C] -55 °C 25 °C 175 °C 180 270 360 450 540 630 720 12345 ID [A] VGS [V] 3 V 3.5 V 4 V 4.5 V 10 V 180 270 360 450 540 630 720 012345 ID [A] VDS [V] 3 V 3.5 V 4 V 4.5 V 10 V 0 180 360 540 720 RDS(on) [mΩ] ID [A] Rev. 1.0 page 5 2013-05-27
Data Sheet IPB180N04S4L-H0 9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D 11 Typical forward diode characteristicis 12 Typ. avalanche characteristics IF = f(VSD) I AS = f(t AV) parameter: T j parameter: Tj(start) 25 °C 100 °C 150 °C 100 1000 1 10 100 1000 IAV [A] tAV [µs] 25 °C175 °C 100 101 102 103 IF [A] VSD [V] Ciss Coss Crss 101 102 103 104 105 0 5 10 15 20 25 30 C [pF] VDS [V] 180 µA 1800 µA 0.25 0.5 0.75 1.25 1.5 1.75 -60 -20 20 60 100 140 180 VGS(th) [V] Tj [°C] Rev. 1.0 page 6 2013-05-27
Data Sheet IPB180N04S4L-H0
13 Typical avalanche energy 14 Drain-source breakdown voltage
E AS = f(T j) V BR(DSS) = f(T j); I D = 1 mA parameter: I D 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 180 A pulsed parameter: V DD -60 -20 20 60 100 140 180 VBR(DSS) [V] Tj [°C] 8 V 32 V 0 50 100 150 200 250 VGS [V] Qgate [nC] 180 A 90 A 45 A 500 1000 1500 2000 25 75 125 175 EAS [mJ] Tj [°C] VGS Qgate Q gs Qgd Q g VGS Qgate Q gs Qgd Q g Rev. 1.0 page 7 2013-05-27
Data Sheet IPB180N04S4L-H0 Published by Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2013 All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2013-05-27
Data Sheet IPB180N04S4L-H0
Revision History
Revision 1.0 Date 27.05.2013 Changes Data Sheet Rev. 1.0 page 9 2013-05-27