IPP15N03L INFINEON | Alldatasheet

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Technical content

OptiMOSâ Buck converter series Product Summary VDS 30 V RDS(on) max. SMD version 12.6 mΩ ID 42 A Feature

  • N-Channel
  • Logic Level
  • Low On-Resistance RDS(on)
  • Excellent Gate Charge x RDS(on) product (FOM)
  • Superior thermal resistance
  • 175°C operating temperature
  • Avalanche rated
  • dv/dt rated
  • Ideal for fast switching buck converters P- TO263 -3-2 P- TO220 -3-1 Marking 15N03L 15N03L Type Package Ordering Code IPP15N03L P- TO220 -3-1 Q67042-S4039 IPB15N03L P- TO263 -3-2 Q67040-S4344 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current1) TC=25°C ID A Pulsed drain current TC=25°C ID puls 168 Avalanche energy, single pulse ID=20A, VDD=25V, RGS=25Ω EAS 20 mJ Repetitive avalanche energy, limited by Tjmax2) EAR 8 Reverse diode dv/dt IS=42A, VDS=-V, di/dt=200A/µs, Tjmax=175°C dv/dt 6 kV/µs Gate source voltage VGS ±20 V Power dissipation TC=25°C Ptot 83 W Operating and storage temperature Tj , Tstg -55... +175 °C IEC climatic category; DIN IEC 68-1 55/175/56

Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - 1.2 1.8 K/W SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) RthJA Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage VGS=0V, ID=1mA V(BR)DSS 30 - - V Gate threshold voltage, VGS = VDS ID=40µA VGS(th) 1.2 1.6 2 Zero gate voltage drain current VDS=30V, VGS=0V, Tj=25°C VDS=30V, VGS=0V, Tj=125°C IDSS 0.01 100 µA Gate-source leakage current VGS=20V, VDS=0V IGSS - 1 100 nA Drain-source on-state resistance VGS=4.5V, ID=21A VGS=4.5V, ID=21A, SMD version RDS(on) 14.9 14.5 19.9 19.6 mΩ Drain-source on-state resistance VGS=10V, ID=21A VGS=10V, ID=21A, SMD version RDS(on) 10.3 9.9 12.9 12.6 1Current limited by bondwire ; with an RthJC = 1.8K/W the chip is able to carry ID= 64A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not subject to production test. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.

Electrical Characteristics

Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance gfs VDS≥ 2*ID*RDS(on)max, ID=42A 21 42 - S Input capacitance Ciss VGS=0V, VDS=25V, f=1MHz - 850 1130 pF Output capacitance Coss - 330 330 Reverse transfer capacitance Crss - 90 130 Gate resistance RG - 1 - Ω Turn-on delay time td(on) VDD=15V, VGS=10V, ID=21A, RG=7.8Ω - 6.5 9.8 ns Rise time tr - 20 30 Turn-off delay time td(off) - 24 36 Fall time tf - 14.5 21.8 Gate Charge Characteristics Gate to source charge Qgs VDD=15V, ID=21A - 2.7 3.6 nC Gate to drain charge Qgd - 7.4 9.3 Gate charge total Qg VDD=15V, ID=21A, VGS=0 to 5V - 12.7 15.9 Output charge Qoss VDS=15V, ID=21A, VGS=0V - 12.2 15.3 nC Gate plateau voltage V(plateau) VDD=15V, ID=21A - 3.5 - V Reverse Diode Inverse diode continuous forward current IS TC=25°C - - 42 A Inv. diode direct current, pulsed ISM - - 168 Inverse diode forward voltage VSD VGS=0V, IF=42A - 0.95 1.25 V Reverse recovery time trr VR=-V, IF=lS, diF/dt=100A/µs - 24 31 ns Reverse recovery charge Qrr - 18 23 nC

1 Power dissipation

Ptot = f (TC) 0 20 40 60 80 100 120 140 160 °C 190 TC W 100 IPP15N03L Ptot

2 Drain current

ID = f (TC) parameter: VGS≥ 10 V 0 20 40 60 80 100 120 140 160 °C 190 TC A IPP15N03L ID 4 Max. transient thermal impedance ZthJC = f (tp) parameter : D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -4 10 -3 10 -2 10 -1 10 0 10 1 10 K/W IPP15N03L ZthJC single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50

3 Safe operating area

ID = f ( VDS ) parameter : D = 0 , TC = 25 °C 10 -1 10 0 10 1 10 2 V VDS 0 10 1 10 2 10 3 10 A IPP15N03L ID R DS(on) V DS / I D DC 10 ms 1 ms 100 µs 10 µs tp = 8.8µs

5 Typ. output characteristic ID = f (VDS); Tj=25°C parameter: tp = 80 µs 0 0.5 1 1.5 2 2.5 3 3.5 4 V 5 VDS A 110 IPP15N03L ID VGS [V] a a 3.0 b b 3.5 c c 4.0 d d 4.5 e e 5.0 f f 5.5 g Ptot = 83W g 6.0 6 Typ. drain-source on resistance RDS(on) = f (ID) parameter: VGS 0 10 20 30 40 50 A 70 ID mΩ IPP15N03L RDS(on) VGS [V] = b b 3.5 c c 4.0 d d 4.5 e e 5.0 f f 5.5 g g 6.0 7 Typ. transfer characteristics ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: tp = 80 µs 0 1 2 3 4 V 6 VGS A 100 ID 8 Typ. forward transconductance gfs = f(ID); Tj=25°C parameter: gfs 0 10 20 30 40 50 60 70 80 A 100 ID S gfs

9 Drain-source on-state resistance

RDS(on) = f (Tj) parameter : ID = 21 A, VGS = 10 V -60 -20 20 60 100 140 °C 200 Tj mΩ IPP15N03L RDS(on) typ 98% 10 Typ. gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS -60 -20 20 60 100 °C 180 Tj 0.5 1.5 V 2.5 VGS(th) 40uA 0.8mA 11 Typ. capacitances C = f (VDS) parameter: VGS=0V, f=1 MHz 0 5 10 15 20 V 30 VDS 1 10 2 10 3 10 4 10 V pF Ciss Coss Crss 12 Forward character. of reverse diode IF = f (VSD) parameter: Tj , tp = 80 µs VSD 0 10 1 10 2 10 3 10 A IPP15N03L IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 175 °C typ Tj = 175 °C (98%)

13 Typ. avalanche energy EAS = f (Tj) par.: ID = 20 A, VDD = 25 V, RGS = 25 Ω 25 45 65 85 105 125 145 °C 185 Tj mJ EAS 14 Typ. gate charge VGS = f (QGate) parameter: ID = 21 A pulsed 0 4 8 12 16 20 24 28 nC 34 QGate V IPP15N03L VGS

0.2 VDS max

0.5 VDS max

0.8 VDS max

15 Drain-source breakdown voltage

V(BR)DSS = f (Tj) parameter: ID=10 mA -60 -20 20 60 100 140 °C 200 Tj V IPP15N03L V(BR)DSS

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