IPB139N08N3G

IPP139N08N3G INFINEON | Alldatasheet

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Q#451<6? B89786B5AE5>3 ICG9D3 89>7 3 ? >F5BD5BC Q H3 5<<5>D71D53 81B75HR 9H"[Z#@B? 4E3 D ( & Q 1F1<1>3 85D5CD54 Maximum ratings, 1DT V T E><5CC? D85BG9C5C@53 96954 Parameter Symbol Conditions Unit ? >D9>E? EC4B19>3 EBB5>D I 9 T 8 T ,- 6 T 8 T )E<C544B19>3 EBB5>D*# I 9$\\aX_Q T 8 T )0( !1D5C? EB3 5F? <D175 V =H q*( J )? G5B49CC9@1D9? > P \[\ T 8 T /1 K ( @5B1D9>71>4CD? B175D5=@5B1DEB5 T VT _\`S T 3 <9=1D93 3 1D57? BI #' # +#,55697EB5 Value )#$ ,- 1>4$ , V 9H 0( J R ,? >=1H,& )+&. Y" I 9 ,- 6 Product Summary Type #)) ' ! #)# ' ! #) ' ! Package E=%ID%**(%+ E=%ID%*.*%+ E=%ID%*.+%+ Marking )+1C(0C )+1C(0C )+.C(0C + 5F @175

IPP139N08N3 G IPI139N08N3 G IPB136N08N3 G Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Electrical characteristics, 1DT V T E><5CC? D85BG9C5C@53 96954 Static characteristics B19> C? EB3 52 B51;4? G>F? <D175 V "7G#9HH V =H .I 9 = 0( % % J 05B? 71D5F? <D1754B19>3 EBB5>D I 9HH V 9H .V =H T V T % (&) ) r6 V 9H .V =H T V T % )( )(( !1D5 C? EB3 5<51;1753 EBB5>D I =HH V =H .V 9H . % ) )(( Z6 B19> C? EB3 5? > CD1D5B5C9CD1>3 5 R 9H"[Z# V =H V =H .I 9 % ).&( *. B19> C? EB3 5? > CD1D5B5C9CD1>3 5 R 9H"[Z# V =H .I 9 "HB9# % ))&- )+&. V =H .I 9 I^MZ_O[ZPaO\`MZOQ g R_ gV 9Hg5*gI 9gR 9H"[Z#YMd I 9 *, ,0 % H 5F93 5? > ==H ==H ==5@? HI) V =D893 ;3 ? @@5B1B516? B4B19> 9CF5BD93 1<9>CD9<<19B Values + 5F @175

IPP139N08N3 G IPI139N08N3 G IPB136N08N3 G Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics 1<<D9=5 t R % - % !1D5 81BS5 81B13 D5B9CD93 C-# !1D5D? C? EB3 53 81B75 Q S_ % / % Z8 !1D5D? 4B19>3 81B75 Q SP % , % ,G9D3 89>73 81B75 Q _c % 0 % !1D53 81B75D? D1< Q S % )1 *- !1D5@<1D51EF? <D175 V \\XM\`QMa % -&- % J ( ED@ED3 81B75 Q [__ V 99 .V =H . % *- +, Z8 Reverse Diode 9? 453 ? >D9>? EC6? BG1B43 EBB5>D I H % % ,- 6 9? 45@E<C53 EBB5>D I H$\\aX_Q % % )0( 9? 456? BG1B4F? <D175 V H9 V =H .I < T V T % )&( )&* J + 5F5BC5B53 ? F5BID9=5 t ^^ % -( % Z_ + 5F5BC5B53 ? F5BI3 81B75 Q ^^ % /, % Z8 -#,55697EB5 6? B71D53 81B75@1B1=5D5B4569>9D9? > V G .I <4I H Pi <'Pt V C T 8 T Values V =H .V 9H f & " J V 99 .V =H I 9 R = V 99 .I 9 V =H + 5F @175

IPP139N08N3 G IPI139N08N3 G IPB136N08N3 G

1 Power dissipation 2 Drain current

3 Safe operating area 4 Max. transient thermal impedance I 94R"V 9HT 8 T D 4( Z \T@84R"t \\# @1B1=5D5Bt \\ @1B1=5D5BD 4t \\'T V C V C V C 103 102 101 100 10210110010-1 V DS [V] I D [A] <9=9D542 I? > CD1D5 ^Q_U_\MZOQ C9>7<5@E<C5 (&() (&(* (&(- (&) (&* (&- 101 100 10-1 10-2 10010-110-210-310-410-5 t p [s] Z thJC [K/W] 0 50 100 150 200 T C [°C] P tot [W] 0 50 100 150 200 T C [°C] I D [A] + 5F @175

IPP139N08N3 G IPI139N08N3 G IPB136N08N3 G 5 Typ. output characteristics 6 Typ. drain-source on resistance I 94R"V 9HT V T R 9H"[Z#4R"I 9T V T @1B1=5D5BV =H @1B1=5D5BV =H 7 Typ. transfer characteristics 8 Typ. forward transconductance I 94R"V =HKV 9Hg5*gI 9gR 9H"[Z#YMd g R_4R"I 9T V T @1B1=5D5BT V . . 0 40 80 120 I D [A] R DS(on) [m ] T T 120 0 2 4 6 8 V GS [V] I D [A] 0 20 40 60 80 100 I D [A] g fs [S] . . 100 150 0 1 2 3 4 5 V DS [V] I D [A] + 5F @175

IPP139N08N3 G IPI139N08N3 G IPB136N08N3 G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R 9H"[Z#4R"T VI 9 V =H . V =H"\T#4R"T VV =H4V 9H @1B1=5D5BI 9 11 Typ. capacitances 12 Forward characteristics of reverse diode C 4R"V 9HV =H @1B1=5D5BT V \e\\ YMd -60 -20 20 60 100 140 180 T j [°C] R DS(on) [m ] V V -60 -20 20 60 100 140 180 T j [°C] V GS(th) [V] 8U__ 8[__ 8^__ 104 103 102 101 100 0 20 40 60 80 V DS [V] C [pF] T T T T 103 102 101 100 0 0.5 1 1.5 2 2.5 V SD [V] I F [A] + 5F @175

IPP139N08N3 G IPI139N08N3 G IPB136N08N3 G 13 Avalanche characteristics 14 Typ. gate charge I 6H4R"t 6JR =H " V =H4R"Q SM\`QI 9 @E<C54

15 Drain-source breakdown voltage 16 Gate charge waveforms

V 7G"9HH#4R"T VI 9 0 5 10 15 20 Q gate [nC] V GS [V] -60 -20 20 60 100 140 180 T j [°C] V BR(DSS) [V] V =H Q gate V S _"\T# Q S"\T# Q S_ Q SP Q _c Q g T T T 100 0.1 1 10 100 1000 t AV [µs] I AV [A] + 5F @175

IPP139N08N3 G IPI139N08N3 G IPB136N08N3 G PG-TO-263-3 (D²-Pak) + 5F @175

IPP139N08N3 G IPI139N08N3 G IPB136N08N3 G PG-TO-262-3 (I²-Pak) + 5F @175

IPP139N08N3 G IPI139N08N3 G IPB136N08N3 G PG-TO-220-3 + 5F @175

IPP139N08N3 G IPI139N08N3 G IPB136N08N3 G Published by Infineon Technologies AG

81726 Munich, Germany

© 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. + 5F @175