IPB120N06S4-03

IPB120N06S4-03 INFINEON | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 9

Technical content

Features

• N-channel - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current1) I D T C=25°C, V GS=10V 120 A T C=100°C, V GS=10V2) 120 Pulsed drain current2) I D,pulse T C=25°C 480 Avalanche energy, single pulse2) E AS I D=60A 392 mJ Avalanche current, single pulse I AS - 120 A Gate source voltage V GS - ±20 V Power dissipation P tot T C=25°C 167 W Operating and storage temperature T j, T stg - -55 ... +175 °C IEC climatic category; DIN IEC 68-1 - - 55/175/56 Value V DS 60 V R DS(on),max (SMD version) 2.8 mΩ I D 120 A Product Summary Type Package Marking IPB120N06S4-03 PG-TO263-3-2 4N0603 IPI120N06S4-03 PG-TO262-3-1 4N0603 IPP120N06S4-03 PG-TO220-3-1 4N0603 PG-TO220-3-1PG-TO262-3-1PG-TO263-3-2 Rev. 1.0 page 1 2009-03-23

IPI120N06S4-03, IPP120N06S4-03 Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics2) Thermal resistance, junction - case R thJC - - - 0.9 K/W Thermal resistance, junction - ambient, leaded R thJA -- - 6 2 SMD version, device on PCB R thJA minimal footprint - - 62 6 cm2 cooling area3) -- 4 0 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0V, I D= 1mA 60 - - V Gate threshold voltage V GS(th) V DS=V GS, I D=120µA 2.0 3.0 4.0 Zero gate voltage drain current I DSS V DS=60V, V GS=0V, T j=25°C - 0.01 1 µA V DS=60V, V GS=0V, T j=125°C2) - 10 200 Gate-source leakage current I GSS V GS=20V, V DS=0V - - 100 nA Drain-source on-state resistance R DS(on) V GS=10V, I D=100A - 2.6 3.2 mΩ V GS=10V, I D=100A, SMD version - 2.3 2.8 Values Rev. 1.0 page 2 2009-03-23

IPI120N06S4-03, IPP120N06S4-03 Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics2) Input capacitance C iss - 10120 13150 pF Output capacitance C oss - 2480 3220 Reverse transfer capacitance Crss - 100 200 Turn-on delay time t d(on) -4 0- n s Rise time t r -1 0- Turn-off delay time t d(off) -8 0- Fall time t f -1 5- Gate Charge Characteristics2) Gate to source charge Q gs -5 4 7 0 n C Gate to drain charge Q gd - 13.5 27 Gate charge total Q g - 125 160 Gate plateau voltage V plateau - 5.3 - V Reverse Diode Diode continous forward current2) I S - - 120 A Diode pulse current2) I S,pulse - - 480 Diode forward voltage V SD V GS=0V, I F=100A, T j=25°C 0.6 0.95 1.3 V Reverse recovery time2) t rr V R=30V, I F=120A, di F/dt =100A/µs - 115 - ns Reverse recovery charge2) Q rr - 110 - nC T C=25°C Values V GS=0V, V DS=25V, f =1MHz V DD=30V, V GS=10V, I D=120A, R G=3.5Ω V DD=48V, I D=120A, V GS=0 to 10V 2) Specified by design. Not subject to production test. 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 1) Current is limited by bondwire; with an R thJC = 0.9K/W the chip is able to carry 181A at 25°C. Rev. 1.0 page 3 2009-03-23

IPI120N06S4-03, IPP120N06S4-03

1 Power dissipation 2 Drain current

P tot = f(T C); V GS ≥ 6 V I D = f(T C); V GS ≥ 6 V; SMD 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0; SMD Z thJC = f(t p) parameter: t p parameter: D =t p/T 1 µs 10 µs 100 µs 1 ms 100 1000 0.1 1 10 100 V DS [V] I D [A] single pulse 0.01 0.05 0.1 0.5 10010-110-210-310-410-510-6 101 100 10-1 10-2 10-3 t p [s] Z thJC [K/W] 100 120 140 160 180 0 50 100 150 200 T C [°C] P tot [W] 100 120 140 0 50 100 150 200 T C [°C] I D [A] Rev. 1.0 page 4 2009-03-23

IPI120N06S4-03, IPP120N06S4-03 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C; SMD R DS(on) = f(I D); T j = 25 °C; SMD parameter: V GS parameter: V GS 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = 6V R DS(on) = f(T j); I D = 100 A; V GS = 10 V; SMD parameter: T j 1.5 2.5 3.5 4.5 -60 -20 20 60 100 140 180 T j [°C] R DS(on) [mΩ ] 5 V 6 V

7 V8 V10 V

V DS [V] I D [A]

5 V 6 V

I D [A] R DS(on) [mΩ ] -55 °C 25 °C 175 °C 160 240 320 400 480 34567 V GS [V] I D [A] Rev. 1.0 page 5 2009-03-23

IPI120N06S4-03, IPP120N06S4-03 9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D

11 Typical forward diode characteristicis 12 Avalanche characteristics

IF = f(VSD) I A S= f(t AV) parameter: T j parameter: Tj(start) 25 °C175 °C 103 102 101 100 V SD [V] I F [A] 120 µA 1200 µA 1.5 2.5 3.5 -60 -20 20 60 100 140 180 T j [°C] V GS(th) [V] Ciss Coss Crss 105 104 101 102 103 0 5 10 15 20 25 30 V DS [V] C [pF] 101 25 °C 100 °C 150 °C 100 1000 0.1 1 10 100 1000 t AV [µs] I AV [A] 25 °C175 °C 103 102 101 100 V SD [V] I F [A] Rev. 1.0 page 6 2009-03-23

IPI120N06S4-03, IPP120N06S4-03

13 Avalanche energy 14 Drain-source breakdown voltage

E AS = f(T j); ; I D = 60 A V BR(DSS) = f(T j); I D = 1 mA 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 120 A pulsed parameter: V DD V GS Q gate V gs(th) Q g(th) Q gs Q gd Q sw Q g -55 -15 25 65 105 145 T j [°C] V BR(DSS) [V]

12 V 48 V

Q gate [nC] V GS [V] 100 150 200 250 300 25 75 125 175 T j [°C] E AS [mJ] Rev. 1.0 page 7 2009-03-23

IPI120N06S4-03, IPP120N06S4-03 Published by Infineon Technologies AG

81726 Munich, Germany

© Infineon Technologies AG 2009 All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2009-03-23

IPI120N06S4-03, IPP120N06S4-03

Revision History

Revision 1.0 Date 23.03.2009 Changes Final data sheet Rev. 1.0 page 9 2009-03-23