IPB120N06NG_10 INFINEON | Alldatasheet

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O >@50ABAE8B2 78=62 >=D4@B4@A0=3 AG=2 @42 B8582 0B8>= O R O D0;0=2 74@0B43 Maximum ratings, 0BT U R C=;4AA>B74@E8A4A? 42 85843 Parameter Symbol Conditions Unit >=B8=C>CA3 @08=2 C@@4=B I 9 T 8 R /- 6 T 8 R )# +(( * 4D4@A43 8>3 43 v 'Ot Ov 'Ot I 9 V 9G - Oi 'Ot T A T U$XLb R . VI'p] !0B4A>C@2 4D>;B064 V =G o*( I )>E4@3 8AA8? 0B8>= P ^Z^ T 8 R )-0 J R 2 ;8< 0B82 2 0B46>@G #' # Value )#+44586C@4 V 9G .( I R +>=< 0F+& D4@A8>= ))&/ X" I 9 /- 6 Product Summary Type #)) ' ! #) ' ! Package E%HD**(%+%) E%HD*.+%+%* Marking )*(C(.C )*(C(.C * 4D ? 064

Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics D4@A8>=3 4D82 4>=) Electrical characteristics, 0BT U R C=;4AA>B74@E8A4A? 42 85843 Static characteristics -I 9 < .( % % I !0B4B7@4A7>;3 D>;B064 V =G"^S# V 9G4V =GI 9 T *&) + , V 9G -V =G T U R % (&() ) p6 V 9G -V =G T U R % ) )(( !0B4 A>C@2 4;40: 0642 C@@4=B I =GG V =G -V 9G - % )( )(( Y6 @08= A>C@2 4>= AB0B4@4A8AB0=2 4 R 9G"ZY# V =G -I 9 % 1&1 )* X" V =G -I 9 D4@A8>= % 1&. ))&/ H\\LY]NZYO_N^LYNP g Q] eV 9Ge5*eI 9eR 9G"ZY#XLb I 9 +. /* % G 4D82 4>= < < F < < F < < 4? >FG) 2 >==42 B8>= Values * 4D ? 064

Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics !0B4 70@R4 70@02 B4@8AB82 A+# !0B4? ;0B40CD>;B064 V [WL^PL_ % -&0 % I ( CB? CB2 70@64 Q Z]] V 99 -V =G - % +( ,( Reverse Diode 8>3 45>@E0@3 D>;B064 V G9 V =G -I < T U R % ) )&+ I +#+44586C@4 V F -I <4I G Oi <'Ot T A T 8 R Values V =G -V 9G f & " H V 99 -V =G I 9 R = V 99 -I 9 V =G * 4D ? 064

1 Power dissipation 2 Drain current

3 Safe operating area 4 Max. transient thermal impedance I 94Q"V 9GT 8 R D 4( Z ^S@84Q"t [# T A T A T A < A < A 10210110010-1 103 102 101 100 10-1 V DS [V] I D [A] ;8< 8B43 1G>= AB0B4 \\P]T]^LYNP A8=6;4? C;A4(&() (&(* (&(- (&) (&* (&- 10010-110-210-310-410-5 100 10-1 10-2 t p [s] Z thJC [K/W] 100 120 140 160 180 0 50 100 150 200 T C [°C] P tot [W] 0 50 100 150 200 T C [°C] I D [A] * 4D ? 064

5 Typ. output characteristics 6 Typ. drain-source on resistance I 94Q"V 9GT U R R 9G"ZY#4Q"I 9T U R 7 Typ. transfer characteristics 8 Typ. forward transconductance I 94Q"V =GIV 9Ge5*eI 9eR 9G"ZY#XLb g Q]4Q"I 9T U R ? 0@0< 4B4@T U 0 20 40 60 80 I D [A] R DS(on) [m ] R R 100 120 140 160 0 1 2 3 4 5 6 7 V GS [V] I D [A] 0 20 40 60 80 I D [A] g fs [S] 100 120 140 160 180 200 220 240 0 1 2 3 4 5 V DS [V] I D [A] * 4D ? 064

9 Drain-source on-state resistance 10 Typ. gate threshold voltage R 9G"ZY#4Q"T UI 9 V =G - V =G"^S#4Q"T UV =G4V 9G ? 0@0< 4B4@I 9 11 Typ. capacitances 12 Forward characteristics of reverse diode C 4Q"V 9GV =G ? 0@0< 4B4@T U ^c[ -60 -20 20 60 100 140 180 T j [°C] R DS(on) [m ] T T 0.5 1.5 2.5 3.5 -60 -20 20 60 100 140 180 T j [°C] V GS(th) [V] R R R R 103 102 101 100 10-1 0 0.5 1 1.5 2 V SD [V] I F [A] 8T]] 8Z]] 8\\]] 104 103 102 101 0 10 20 30 40 50 V DS [V] C [pF] * 4D ? 064

13 Avalanche characteristics 14 Typ. gate charge I 6G4Q"t 6IR =G " V =G4Q"Q RL^PI 9 ? C;A43

15 Drain-source breakdown voltage 16 Gate charge waveforms

V 7F"9GG#4Q"T UI 9 -60 -20 20 60 100 140 180 T j [°C] V BR(DSS) [V] V =G Q gate V R ]"^S# Q R"^S# Q R] Q RO Q ]a Q g R R R 103102101100 102 101 100 t AV [µs] I AV [A] 0 10 20 30 40 50 Q gate [nC] V GS [V] * 4D ? 064

PG-TO-263 (D²-Pak) * 4D ? 064

PG-TO220-3: Outline * 4D ? 064

''*$ & ' /'4)" 4,*'& *'& 35 00/2P " .% * 4D ? 064