IPB110P06LM INFINEON | Alldatasheet

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Technical content

Features

  • P-Channel
  • Verylowon-resistanceRDS(on)@VGS=4.5V
  • 100%avalanchetested
  • LogicLevel
  • Enhancementmode
  • Pb-freeleadplating;RoHScompliant
  • Halogen-freeaccordingtoIEC61249-2-21 Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Parameter Value Unit VDS -60 V RDS(on),max 11 mΩ ID -100 A Type/OrderingCode Package Marking RelatedLinks IPB110P06LM PG-TO 263-3 110P06LM -

OptiMOSTMPowerTransistor,-60V IPB110P06LM Rev.2.0,2019-04-01Final Data Sheet TableofContents

OptiMOSTMPowerTransistor,-60V IPB110P06LM Rev.2.0,2019-04-01Final Data Sheet 1Maximumratings atTC=25°C,unlessotherwisespecified Table2Maximumratings Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Continuous drain current ID -100 -78 -91 -65 A VGS=-10V,TC=25°C VGS=-10V,TC=100°C VGS=-4.5V,TC=25°C VGS=-4.5V,TC=100°C Pulsed drain current1) ID,pulse - - -400 A TC=25°C Avalanche energy, single pulse2) EAS - - 1616 mJ ID=-100A,RGS=25Ω Gate source voltage VGS -20 - 20 V - Power dissipation Ptot - - 300 W TC=25°C Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category; DIN IEC 68-1: 55/175/56 2Thermalcharacteristics Table3Thermalcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - case, bottom RthJC - - 0.5 °C/W - Device on PCB, 6 cm² cooling area3) RthJA - - 62 °C/W - 1) See Diagram 3 for more detailed information 2) See Diagram 13 for more detailed information 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.

OptiMOSTMPowerTransistor,-60V IPB110P06LM Rev.2.0,2019-04-01Final Data Sheet 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS -60 - - V VGS=0V,ID=-250µA Gate threshold voltage VGS(th) -1 -1.5 -2 V VDS=VGS,ID=-5550µA Zero gate voltage drain current IDSS -0.1 -10 -100 µA VDS=-60V,VGS=0V,Tj=25°C VDS=-60V,VGS=0V,Tj=125°C Gate-source leakage current IGSS - -10 -100 nA VGS=-20V,VDS=0V Drain-source on-state resistance RDS(on) 16 mΩ VGS=-10V,ID=-100A VGS=-4.5V,ID=-91A Gate resistance RG - 5 - Ω - Transconductance gfs - 100 - S |VDS|≥2|ID|RDS(on)max,ID=-50A Table5Dynamiccharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance Ciss - 8500 - pF VGS=0V,VDS=-30V,f=1MHz Output capacitance Coss - 1200 - pF VGS=0V,VDS=-30V,f=1MHz Reverse transfer capacitance Crss - 260 - pF VGS=0V,VDS=-30V,f=1MHz Turn-on delay time td(on) - 22 - ns VDD=-30V,VGS=-10V,ID=-50A, RG,ext=1.6Ω Rise time tr - 33 - ns VDD=-30V,VGS=-10V,ID=-50A, RG,ext=1.6Ω Turn-off delay time td(off) - 277 - ns VDD=-30V,VGS=-10V,ID=-50A, RG,ext=1.6Ω Fall time tf - 74 - ns VDD=-30V,VGS=-10V,ID=-50A, RG,ext=1.6Ω

OptiMOSTMPowerTransistor,-60V IPB110P06LM Rev.2.0,2019-04-01Final Data Sheet Table6Gatechargecharacteristics1) Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs - -30 - nC VDD=-30V,ID=-100A, VGS=0to-10V Gate charge at threshold Qg(th) - -13 - nC VDD=-30V,ID=-100A, VGS=0to-10V Gate to drain charge Qgd - -76 - nC VDD=-30V,ID=-100A, VGS=0to-10V Switching charge Qsw - -92 - nC VDD=-30V,ID=-100A, VGS=0to-10V Gate charge total Qg - -281 - nC VDD=-30V,ID=-100A, VGS=0to-10V Gate plateau voltage Vplateau - -3.5 - V VDD=-30V,ID=-100A, VGS=0to-10V Output charge Qoss - -88 - nC VDS=-30V,VGS=0V Table7Reversediode Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Diode continuous forward current IS - - -100 A TC=25°C Diode pulse current IS,pulse - - -400 A TC=25°C Diode forward voltage VSD - -0.9 -1.2 V VGS=0V,IF=-100A,Tj=25°C Reverse recovery time trr - 88 - ns VR=-30V,IF=-100A, diF/dt=-100A/µs Reverse recovery charge Qrr - -324 - nC VR=-30V,IF=-100A, diF/dt=-100A/µs 1) See diagram ,Gate charge waveforms, for gate charge parameter definition

OptiMOSTMPowerTransistor,-60V IPB110P06LM Rev.2.0,2019-04-01Final Data Sheet 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation TC[°C] Ptot[W] 100 125 150 175 200 120 160 200 240 280 320 Ptot=f(TC) Diagram2:Draincurrent TC[°C] -ID[A] 100 125 150 175 200 100 120 ID=f(TC);|VGS|≥10V Diagram3:Safeoperatingarea -VDS[V] -ID[A] 10-1 100 101 102 10-1 100 101 102 103 1 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram4:Max.transientthermalimpedance tp[s] ZthJC[K/W] 10-5 10-4 10-3 10-2 10-1 100 10-3 10-2 10-1 100 0.5 0.2 0.1 0.05 0.02 0.01 single pulse ZthJC=f(tp);parameter:D=tp/T

OptiMOSTMPowerTransistor,-60V IPB110P06LM Rev.2.0,2019-04-01Final Data Sheet Diagram5:Typ.outputcharacteristics -VDS[V] -ID[A] 100 150 200 250 300 350 -10 V -5 V -4.5 V -4 V -3.5 V -3 V -2.8 V ID=f(VDS),Tj=25°C;parameter:VGS Diagram6:Typ.drain-sourceonresistance -ID[A] RDS(on)[mΩ ] 100 125 150 175 200 -2.8 V -3 V -3.5 V -4 V -4.5 V -5 V -10 V RDS(on)=f(ID),Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics -VGS[V] -ID[A] 100 125 150 175 °C 25 °C ID=f(VGS),|VDS|>2|ID|RDS(on)max;parameter:Tj Diagram8:Typ.drain-sourceonresistance -VGS[V] RDS(on)[mΩ ] 175 °C 25 °C RDS(on)=f(VGS),ID=-100A;parameter:Tj

OptiMOSTMPowerTransistor,-60V IPB110P06LM Rev.2.0,2019-04-01Final Data Sheet Diagram9:Normalizeddrain-sourceonresistance Tj[°C] RDS(on)(normalizedto25°C) -80 -40 120 160 200 0.0 0.4 0.8 1.2 1.6 2.0 2.4 RDS(on)=f(Tj),ID=-100A,VGS=-10V Diagram10:Typ.gatethresholdvoltage Tj[°C] -VGS(th)[V] -80 -40 120 160 200 0.75 1.00 1.25 1.50 1.75 2.00 -5550 µA -55500 µA VGS(th=f(Tj),VGS=VDS;parameter:ID Diagram11:Typ.capacitances -VDS[V] C[pF] 102 103 104 105 Ciss Coss Crss C=f(VDS);VGS=0V;f=1MHz Diagram12:Forwardcharacteristicsofreversediode -VSD[V] -IF[A] 0.00 0.50 1.00 1.50 2.00 100 101 102 103 25 °C 25 °C, max 175 °C 175 °C, max IF=f(VSD);parameter:Tj

OptiMOSTMPowerTransistor,-60V IPB110P06LM Rev.2.0,2019-04-01Final Data Sheet Diagram13:Avalanchecharacteristics tAV[µs] -IAV[A] 100 101 102 103 100 101 102 103 25 °C 100 °C 150 °C IAS=f(tAV);RGS=25Ω ;parameter:Tj,start Diagram14:Typ.gatecharge -Qgate[nC] -VGS[V] 120 160 200 240 280 -12 V -30 V -48 V VGS=f(Qgate),ID=-100Apulsed,Tj=25°C;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Tj[°C] -VBR(DSS)[V] -80 -40 120 160 200 VBR(DSS)=f(Tj);ID=-250µA Diagram Gate charge waveforms

OptiMOSTMPowerTransistor,-60V IPB110P06LM Rev.2.0,2019-04-01Final Data Sheet 5PackageOutlines Figure1OutlinePG-TO263-3,dimensionsinmm/inches

OptiMOSTMPowerTransistor,-60V IPB110P06LM Rev.2.0,2019-04-01Final Data Sheet RevisionHistory IPB110P06LM Revision:2019-04-01,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2019-04-01 Release of final version Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2019InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.