IPP10N03L INFINEON | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 8

Technical content

OptiMOSâ Buck converter series Product Summary VDS 30 V RDS(on) max. SMD version 8.9 mΩ ID 73 A Feature

  • N-Channel
  • Logic Level
  • Low On-Resistance RDS(on)
  • Excellent Gate Charge x RDS(on) product (FOM)
  • Superior thermal resistance
  • 175°C operating temperature
  • Avalanche rated
  • dv/dt rated
  • Ideal for fast switching buck converters P- TO263 -3-2 P- TO220 -3-1 Marking 10N03L 10N03L Type Package Ordering Code IPP10N03L P- TO220 -3-1 Q67042-S4040 IPB10N03L P- TO263 -3-2 Q67040-S4346 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current1) TC=25°C ID A Pulsed drain current TC=25°C ID puls 292 Avalanche energy, single pulse ID=30A, VDD=25V, RGS=25Ω EAS 25 mJ Repetitive avalanche energy, limited by Tjmax2) EAR 10 Reverse diode dv/dt IS=73A, VDS=24, di/dt=200A/µs, Tjmax=175°C dv/dt 6 kV/µs Gate source voltage VGS ±20 V Power dissipation TC=25°C Ptot 107 W Operating and storage temperature Tj , Tstg -55... +175 °C IEC climatic category; DIN IEC 68-1 55/175/56

Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - 0.9 1.4 K/W SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) RthJA Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage VGS=0V, ID=1mA V(BR)DSS 30 - - V Gate threshold voltage, VGS = VDS ID=60µA VGS(th) 1.2 1.6 2 Zero gate voltage drain current VDS=30V, VGS=0V, Tj=25°C VDS=30V, VGS=0V, Tj=175°C IDSS 0.01 100 µA Gate-source leakage current VGS=20V, VDS=0V IGSS - 1 100 nA Drain-source on-state resistance VGS=4.5V, ID=36A VGS=4.5V, ID=36A, SMD version RDS(on) 9.9 9.5 13.4 13.1 mΩ Drain-source on-state resistance4) VGS=10V, ID=36A VGS=10V, ID=36A, SMD version RDS(on) 6.8 6.5 9.2 8.9 1Current limited by bondwire ; with an RthJC = 1.4K/W the chip is able to carry ID= 88A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not subject to production test. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 4Diagrams are related to straight lead versions

Electrical Characteristics

Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance gfs VDS≥ 2*ID*RDS(on)max, ID=63A 32 63 - S Input capacitance Ciss VGS=0V, VDS=25V, f=1MHz - 1290 1710 pF Output capacitance Coss - 500 670 Reverse transfer capacitance Crss - 130 190 Gate resistance RG - 1.4 - Ω Turn-on delay time td(on) VDD=15V, VGS=10V, ID=18A, RG=4.7Ω - 7.7 11.6 ns Rise time tr - 20 30 Turn-off delay time td(off) - 31.5 47.3 Fall time tf - 19 28.5 Gate Charge Characteristics Gate to source charge Qgs VDD=15V, ID=36A - 4 5 nC Gate to drain charge Qgd - 10.6 13.3 Gate charge total Qg VDD=15V, ID=36A, VGS=0 to 5V - 19 23.8 Output charge Qoss VDS=15V, ID=36A, VGS=0V - 18.2 22.8 nC Gate plateau voltage V(plateau) VDD=15V, ID=36A - 3.6 - V Reverse Diode Inverse diode continuous forward current IS TC=25°C - - 73 A Inv. diode direct current, pulsed ISM - - 292 Inverse diode forward voltage VSD VGS=0V, IF=73A - 0.96 1.28 V Reverse recovery time trr VR=15V, IF=lS, diF/dt=100A/µs - 32.9 41.2 ns Reverse recovery charge Qrr - 33 41 nC

1 Power dissipation

Ptot = f (TC) 0 20 40 60 80 100 120 140 160 °C 190 TC 100 W 120 IPP10N03L Ptot

2 Drain current

ID = f (TC) parameter: VGS≥ 10 V 0 20 40 60 80 100 120 140 160 °C 190 TC A IPP10N03L ID 4 Max. transient thermal impedance ZthJC = f (tp) parameter : D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -4 10 -3 10 -2 10 -1 10 0 10 1 10 K/W IPP10N03L ZthJC single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50

3 Safe operating area

ID = f ( VDS ) parameter : D = 0 , TC = 25 °C 10 -1 10 0 10 1 10 2 V VDS 0 10 1 10 2 10 3 10 A IPP10N03L ID R DS(on) V DS / I D DC 10 ms 1 ms 100 µs 10 µs tp = 1.8µs

5 Typ. output characteristic ID = f (VDS); Tj=25°C parameter: tp = 80 µs 0 0.5 1 1.5 2 2.5 3 3.5 4 V 5 VDS 100 120 140 A 170 IPP10N03L ID VGS [V] a a 3.0 b b 3.5 c c 4.0 d d 4.5 e e 5.0 f f 5.5 g g 6.0 h Ptot = 107W h 10.0 6 Typ. drain-source on resistance RDS(on) = f (ID) parameter: VGS 0 20 40 60 80 100 A 140 ID 0.004 0.008 0.012 0.016 0.02 0.024 Ω 0.032 IPP10N03L RDS(on) VGS [V] = b b 3.5 c c 4.0 d d 4.5 e e 5.0 f f 5.5 g g 6.0 h h 10.0 7 Typ. transfer characteristics ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: tp = 80 µs 0 1 2 3 4 V 6 VGS 100 A 140 ID 8 Typ. forward transconductance gfs = f(ID); Tj=25°C parameter: gfs 0 25 50 75 100 A 150 ID S gfs

9 Drain-source on-state resistance

RDS(on) = f (Tj) parameter : ID = 36 A, VGS = 10 V -60 -20 20 60 100 140 °C 200 Tj Ω IPP10N03L RDS(on) typ 98% 10 Typ. gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS -60 -20 20 60 100 °C 180 Tj 0.5 1.5 V VGS(th) 0,9mA 60µA 11 Typ. capacitances C = f (VDS) parameter: VGS=0V, f=1 MHz 0 5 10 15 20 V 30 VDS 2 10 3 10 4 10 pF C Ciss Coss Crss 12 Forward character. of reverse diode IF = f (VSD) parameter: Tj , tp = 80 µs VSD 0 10 1 10 2 10 3 10 A IPP10N03L IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 175 °C typ Tj = 175 °C (98%)

13 Typ. avalanche energy EAS = f (Tj) par.: ID = 30 A, VDD = 25 V, RGS = 25 Ω 25 45 65 85 105 125 145 °C 185 Tj mJ EAS 14 Typ. gate charge VGS = f (QGate) parameter: ID = 36 A pulsed 0 10 20 30 40 nC 55 QGate V IPP10N03L VGS

0.2 VDS max

0.5 VDS max

0.8 VDS max

15 Drain-source breakdown voltage

V(BR)DSS = f (Tj) parameter: ID=10 mA -60 -20 20 60 100 140 °C 200 Tj V IPP10N03L V(BR)DSS

Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.