IPB108N15N3G INFINEON | Alldatasheet

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Technical content

Features

  • N-channel, normal level
  • Excellent gate charge x R DS(on) product (FOM)
  • Very low on-resistance R DS(on)
  • 175 °C operating temperature
  • Pb-free lead plating; RoHS compliant; Halogen free
  • Qualified according to JEDEC1) for target application
  • Ideal for high-frequency switching and synchronous rectification
  • Halogen-free according to IEC61249-2-21 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T C=25 °C 83 A T C=100 °C 59 Pulsed drain current2) I D,pulse T C=25 °C 332 Avalanche energy, single pulse E AS I D=83 A, R GS=25 Ω 330 mJ Gate source voltage V GS ±20 V Power dissipation P tot T C=25 °C 214 W Operating and storage temperature T j, T stg -55 ... 175 °C IEC climatic category; DIN IEC 68-1 55/175/56 2) See figure 3 Value 1)J-STD20 and JESD22 V DS 150 V R DS(on),max (TO263) 10.8 mΩ I D 83 A Product Summary Type IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G Marking 108N15N 111N15N 111N15N Rev. 2.1 page 1 2009-12-01

IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R thJC - - 0.7 K/W R thJA minimal footprint - - 62 6 cm2 cooling area3) -- 4 0 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 150 - - V Gate threshold voltage V GS(th) V DS=V GS, I D=160 µA 234 Zero gate voltage drain current I DSS V DS=120 V, V GS=0 V, T j=25 °C - 0.1 1 µA V DS=120 V, V GS=0 V, T j=125 °C - 10 100 Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=83 A, (TO220; TO262) - 9.4 11.1 mΩ V GS=10 V, I D=83 A, (TO263) - 9.1 10.8 V GS=8 V, I D=41 A, (TO220; TO262) - 9.5 11.3 V GS=8 V, I D=41 A, (TO263) - 9.2 11 Gate resistance R G - 2.4 - Ω Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=83 A 47 94 - S Values Thermal resistance, junction - ambient 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.1 page 2 2009-12-01

IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 3230 - pF Output capacitance C oss - 378 - Reverse transfer capacitance C rss -7- Turn-on delay time t d(on) -1 7- n s Rise time t r -3 5- Turn-off delay time t d(off) -3 2- Fall time t f -9- Gate Charge Characteristics4) Gate to source charge Q gs -1 8- n C Gate to drain charge Q gd -7- Switching charge Q sw -1 6- Gate charge total Q g -4 1 5 5 Gate plateau voltage V plateau - 5.7 - V Output charge Q oss V DD=75 V, V GS=0 V - 106 141 nC Reverse Diode Diode continous forward current I S - - 83 A Diode pulse current I S,pulse - - 332 Diode forward voltage V SD V GS=0 V, I F=83 A, T j=25 °C - 1 1.2 V Reverse recovery time t rr - 132 - ns Reverse recovery charge Q rr - 415 - nC 4) See figure 16 for gate charge parameter definition 5) Plotted values correspond to IPP11N15N3 G and IPI111N15N3 G. Corresponding values for IPB108N15N3 G are 0.3mΩ lower V R=75 V, I F=I S, di F/dt =100 A/µs T C=25 °C Values V GS=0 V, V DS=75 V, f =1 MHz V DD=75 V, V GS=10 V, I D=83 A, R G=1.6 Ω V DD=75 V, I D=83 A, V GS=0 to 10 V Rev. 2.1 page 3 2009-12-01

IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G

1 Power dissipation 2 Drain current

P tot=f(T C) I D=f(T C); V GS≥10 V 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10010-110-210-310-410-5 100 10-1 10-2 t p [s] Z thJC [K/W] 120 160 200 240 0 50 100 150 200 T C [°C] P tot [W] 100 0 50 100 150 200 T C [°C] I D [A] 1 µs 10 µs 100 µs 1 ms 10 ms DC 10310210110010-1 103 102 101 100 10-1 V DS [V] I D [A] Rev. 2.1 page 4 2009-12-01

IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G 5 Typ. output characteristics 6 Typ. drain-source on resistance 5) I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 5 V 5.5 V 6 V 8 V 10 V 0 20 40 60 80 100 120 I D [A] R DS(on) [mΩ] 25 °C 175 °C 100 150 200 02468 V GS [V] I D [A] 100 120 0 40 80 120 I D [A] g fs [S] 4.5 V 5 V 5.5 V 6 V 6.5 V 7 V 8 V 10 V 100 150 200 012345 V DS [V] I D [A] Rev. 2.1 page 5 2009-12-01

IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=83 A; V GS=10 V V GS(th)=f(T j); V GS=V DS parameter: I D 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j typ 98% -60 -20 20 60 100 140 180 T j [°C] R DS(on) [mΩ] 160 µA 1600 µA 0.5 1.5 2.5 3.5 -60 -20 20 60 100 140 180 T j [°C] V GS(th) [V] Ciss Coss Crss101 102 103 104 0 2 04 06 08 0 1 0 0 V DS [V] C [pF] 25 °C 175 °C 25°C, 98% 175°C, 98% 100 101 102 103 0 0.5 1 1.5 2 V SD [V] I F [A] Rev. 2.1 page 6 2009-12-01

IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=83 A pulsed parameter: T j(start) parameter: V DD

15 Drain-source breakdown voltage 16 Gate charge waveforms

V BR(DSS)=f(T j); I D=1 mA 30 V 75 V 120 V 0 1 02 03 04 05 0 Q gate [nC] V GS [V] 135 140 145 150 155 160 165 170 -60 -20 20 60 100 140 180 T j [°C] V BR(DSS) [V] V GS Q gate V gs(t h ) Q g(th) Q gs Q gd Q sw Q g 25 °C 100 °C 125 °C 100 1 10 100 1000 t AV [µs] I AS [A] Rev. 2.1 page 7 2009-12-01

IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G PG-TO220-3: Outline Rev. 2.1 page 8 2009-12-01

IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G PG-TO263-3: Outline Rev. 2.1 page 9 2009-12-01

IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G PG-TO262-3: Outline Rev. 2.1 page 10 2009-12-01

IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G Published by Infineon Technologies AG

81726 Munich, Germany

© 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.1 page 11 2009-12-01