IPB051N15NM6 INFINEON | Alldatasheet
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Technical content
Features
Fully qualified according to JEDEC for Industrial Applications Table 1 Key performance parameters Parameter Value Unit V 150 V R 5.1 mΩ I 139 A Q 153 nC Q 51 nC Q (500A/μs) 145 nC D²PAK Type / Ordering code Package Marking Related links IPB051N15NM6 PG‑TO263‑3 051N15N6 ‑ N‑channel, normal level• Very low on‑resistance R• DS(on) Superior thermal resistance• 100% avalanche tested• Pb‑free lead plating; RoHS compliant• Halogen‑free according to IEC61249‑2‑21• MSL 1 classified according to J‑STD‑020• DS DS(on),max D oss G rr Public IPB051N15NM6 Final datasheet Drain Pin 2, Tab Gate Pin 1 Source Pin 3
OptiMOS™ 6 Power‑Transistor , 150 V IPB051N15NM6 Public Datasheet 2 Revision 1.0 https://www.infineon.com 2024‑11‑22 Table of contents
OptiMOS™ 6 Power‑Transistor , 150 V IPB051N15NM6 Public Datasheet 3 Revision 1.0 https://www.infineon.com 2024‑11‑22
1 Maximum ratings
at =25 °C, unless otherwise specifiedT Table 2 Maximum ratings Parameter Symbol Values Unit Note / Test condition Min. Typ. Max. Continuous drain current 1) I ‑ ‑ 139 101 A V =10 V, =25 °C T =10 V, =100 °C V T =8 V, =100 °C V T Pulsed drain current 3) I ‑ ‑ 556 A T =25 °C Avalanche current, single pulse 4) I ‑ ‑ 58 A Avalanche energy, single pulse E ‑ ‑ 312 mJ I =44 A, =25 ΩR Gate source voltage V ‑20 ‑ 20 V ‑ Power dissipation P ‑ ‑ 234 3.8 W T =25 °C Operating and storage temperature T, T ‑55 ‑ 175 °C ‑ Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature as 1) specified. For other case temperatures please refer to Diagram 2. De‑rating will be required based on the actual environmental conditions. Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 μm thick) copper area for drain connection. PCB 2) 2 is vertical in still air. See Diagram 3 for more detailed information3) See Diagram 13 for more detailed information4)
2 Thermal characteristics
Table 3 Thermal characteristics Parameter Symbol Values Unit Note / Test condition Min. Typ. Max. Thermal resistance, junction ‑ case R ‑ ‑ 0.64 °C/W Thermal resistance, junction ‑ ambient, 6 cm² cooling area 5) R ‑ ‑ 40 °C/W Thermal resistance, junction ‑ ambient, minimal footprint R ‑ ‑ 62 °C/W Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 μm thick) copper area for drain connection. PCB 5) 2 is vertical in still air. A D GS C GS C GS C GS A thJA D,pulse C AS AS D GS GS tot C A thJA j stg thJC thJA thJA
OptiMOS™ 6 Power‑Transistor , 150 V IPB051N15NM6 Public Datasheet 4 Revision 1.0 https://www.infineon.com 2024‑11‑22
3 Electrical characteristics
at =25 °C, unless otherwise specifiedT Table 4 Static characteristics Parameter Symbol Values Unit Note / Test condition Min. Typ. Max. Drain‑source breakdown voltage V 150 ‑ ‑ V V =0 V, =1 mAI Gate threshold voltage V 3.0 3.5 4.0 V V = , =131 μAV I Zero gate voltage drain current I ‑ 0.1 100 μA V =120 V, =0 V, =25 °C V T =120 V, =0 V, =125 °CV V T Gate‑source leakage current I ‑ 10 100 nA V =20 V, =0 VV Drain‑source on‑state resistance R ‑ 4.1 4.5 5.1 4.8 5.1 6.0 mΩ V =15 V, =58 A I =10 V, =58 A V I =8 V, =29 AV I Gate resistance R ‑ 0.93 1.4 Ω ‑ Transconductance g 49 97 ‑ S | |≥2| | , =58 AV I R I Table 5 Dynamic characteristics Parameter Symbol Values Unit Note / Test condition Min. Typ. Max. Input capacitance 6) C ‑ 3600 4700 pF V =0 V, =75 V, =1 MHzV fOutput capacitance 6) C ‑ 1100 1400 pF Reverse transfer capacitance 6) C ‑ 16 28 pF Turn‑on delay time t ‑ 15 ‑ ns V =75 V, =10 V, =29 A, V I =1.6 ΩR Rise time t ‑ 10 ‑ ns Turn‑off delay time t ‑ 23 ‑ ns Fall time t ‑ 11 ‑ ns Defined by design. Not subject to production test.6) j (BR)DSS GS D GS(th) DS GS D DSS DS GS j DS GS j GSS GS DS DS(on) GS D GS D GS D G fs DS D DS(on)max D iss GS DSoss rss d(on) DD GS D G,ext r d(off) f
OptiMOS™ 6 Power‑Transistor , 150 V IPB051N15NM6 Public Datasheet 5 Revision 1.0 https://www.infineon.com 2024‑11‑22 Table 6 Gate charge characteristics 7) Parameter Symbol Values Unit Note / Test condition Min. Typ. Max. Gate to source charge 8) Q ‑ 19.7 26 nC V =75 V, =29 A, =0 to 10 VI V Gate charge at threshold Q ‑ 12.8 ‑ nC Gate to drain charge 8) Q ‑ 11.8 17.7 nC Switching charge Q ‑ 18.7 ‑ nC Gate charge total 8) Q ‑ 51 64 nC Gate plateau voltage V ‑ 5.4 ‑ V Gate charge total, sync. FET Q ‑ 43 ‑ nC V =0.1 V, =0 to 10 VV Output charge 8) Q ‑ 153 203 nC V =75 V, =0 VV See "Gate charge waveforms" for parameter definition7) Defined by design. Not subject to production test.8) Table 7 Reverse diode Parameter Symbol Values Unit Note / Test condition Min. Typ. Max. Diode continuous forward current I ‑ ‑ 139 A T =25 °C Diode pulse current I ‑ ‑ 556 A Diode forward voltage V ‑ 0.87 1.0 V V =0 V, =58 A, =25 °CI T Reverse recovery time 9) t ‑ 35 70 ns V =75 V, =29 A, d /d =500 A/μsI i t Reverse recovery charge 9) Q ‑ 145 290 nC Reverse recovery time 9) t ‑ 30 60 ns V =75 V, =29 A, d /d =1000 A/μsI i t Reverse recovery charge 9) Q ‑ 242 484 nC Defined by design. Not subject to production test.9) gs DD D GS g(th) gd sw g plateau g(sync) DS GS oss DS GS S C S,pulse SD GS F j rr R F F rr rr R F F rr
OptiMOS™ 6 Power‑Transistor , 150 V IPB051N15NM6 Public Datasheet 6 Revision 1.0 https://www.infineon.com 2024‑11‑22
4 Electrical characteristics diagrams
Diagram 1: Power dissipation Diagram 2: Drain current P =f( )T I =f( ); ≥10 VT V Diagram 3: Safe operating area Diagram 4: Max. transient thermal impedance I =f( ); =25 °C; =0; parameter: V T D t Z =f( ); parameter: = /t D t T tot C D C GS D DS C p thJC p p 0 25 50 75 100 125 150 175 TC [°C] 120 160 200 240Ptot [W] 0 25 50 75 100 125 150 175 TC [°C] 100 125 150ID [A] 100 101 102 103 VDS [V] 10 2 10 1 100 101 102 103 ID [A] 1 µs 10 µs 100 µs 1 ms 10 ms DC 10 6 10 5 10 4 10 3 10 2 10 1 100 tp [s] 10 3 10 2 10 1 100 101 ZthJC [K/W] single pulse 0.01 0.02 0.05 0.1 0.2 0.5
OptiMOS™ 6 Power‑Transistor , 150 V IPB051N15NM6 Public Datasheet 7 Revision 1.0 https://www.infineon.com 2024‑11‑22 Diagram 5: Typ. output characteristics Diagram 6: Typ. drain‑source on resistance I =f( ), =25 °C; parameter: V T V R =f( ), =25 °C; parameter: I T V Diagram 7: Typ. transfer characteristics Diagram 8: Typ. drain‑source on resistance I =f( ), | |>2| | ; parameter: V V I R T R =f( ), =58 A; parameter: V I T D DS j GS DS(on) D j GS D GS DS D DS(on)max j DS(on) GS D j 0 1 2 3 4 5 VDS [V] 100 200 300 400 500 600ID [A] 6 V 7 V 8 V 10 V 15 V 0 40 80 120 160 200 240 280 ID [A] RDS(on) [m ]
6 V 7 V
VGS [V] 100 150 200 250 300ID [A] 25 °C 175 °C 0 2 4 6 8 10 12 14 16 VGS [V] RDS(on) [m ] 55 °C 25 °C 100 °C 175 °C
OptiMOS™ 6 Power‑Transistor , 150 V IPB051N15NM6 Public Datasheet 8 Revision 1.0 https://www.infineon.com 2024‑11‑22 Diagram 9: Normalized drain‑source on resistance Diagram 10: Typ. gate threshold voltage R =f( ), =58 A, =10 VT I V V =f( ), = ; parameter: T V V I Diagram 11: Typ. capacitances Diagram 12: Forward characteristics of reverse diode C=f( ); =0 V; =1 MHzV V f I =f( ); parameter: V T DS(on) j D GS GS(th j GS DS D DS GS F SD j 0 25 50 75 100 125 150 175 200 Tj [°C] 0.0 0.4 0.8 1.2 1.6 2.0 2.4 RDS(on) (normalized to 25 °C) 0 25 50 75 100 125 150 175 200 Tj [°C] VGS(th) [V] 131 µA 1.31 mA 0 25 50 75 100 125 150 VDS [V] 101 102 103 104 C [pF] Ciss Coss Crss VSD [V] 100 101 102 103 IF [A] 25 °C 25 °C. max 175 °C 175 °C. max
OptiMOS™ 6 Power‑Transistor , 150 V IPB051N15NM6 Public Datasheet 9 Revision 1.0 https://www.infineon.com 2024‑11‑22 Diagram 13: Avalanche characteristics Diagram 14: Typ. gate charge I =f( ); =25 Ω; parameter: t R T V =f( ), =29 A pulsed, =25 °C; parameter: Q I T V Diagram 15: Min. drain‑source breakdown voltage Gate charge waveforms V =f( ); =1 mAT I ‑ AS AV GS j,start GS gate D j DD BR(DSS) j D 10 1 100 101 102 103 tAV [µs] 10 1 100 101 102 IAV [A] 25 °C 100 °C 150 °C 0 10 20 30 40 50 60 Qgate [nC] 10VGS [V] 30 V 75 V 120 V 0 25 50 75 100 125 150 175 200 Tj [°C] 142 144 146 148 150 152 154 156 158 160 162 VBR(DSS) [V] G a t e c h a r g e w a v e f o r m s
OptiMOS™ 6 Power‑Transistor , 150 V IPB051N15NM6 Public Datasheet 10 Revision 1.0 https://www.infineon.com 2024‑11‑22
5 Package outlines
Figure 1 Outline PG‑TO263‑3, dimensions in mm DIMENSIONS MIN. MAX. b D c E e A 2.54 9.05 0.40 0.65 9.80 7.45 0.85 0.60 9.45 10.20 7.65 MILLIMETERS 4.30 0.00 4.50 0.10 b2 0.95 1.15 PG-TO263-3-U01 PACKAGE - GROUP NUMBER: c2 1.17 1.37 E1 8.40 8.60 N H L 5.08 1.00 2.40 14.60 0.70 1.30 1.60 3.00 15.90
OptiMOS™ 6 Power‑Transistor , 150 V IPB051N15NM6 Public Datasheet 11 Revision 1.0 https://www.infineon.com 2024‑11‑22 IPB051N15NM6 Revision 2024‑11‑22, Rev. 1.0 Previous revisions Revision Date Subjects (major changes since last revision) 1.0 2024‑11‑22 Release of final datasheet Trademarks All referenced product or service names and trademarks are the property of their respective owners. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Published by Infineon Technologies AG
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