IPB034N06N3G INFINEON | Alldatasheet

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P6? ABH>3 A53 C9693 1C9? >=? C? A 4A9E5B1>443 43 ,& ), P G3 5<<5>C71C53 81A75GR 9H"[Z#@A? 4D3 C ( & P 1E1<1>3 85C5BC54 Maximum ratings, 1CT V S D><5BB? C85AF9B5B@53 96954 Parameter Symbol Conditions Unit ? >C9>D? DB4A19>3 DAA5>C I 9 T 8 S *# )(( 6 T 8 S )(( )D<B544A19>3 DAA5>C+# I 9$\\\`X^Q T 8 S ,(( R =H " ),1 Y@ !1C5B? DA3 5E? <C175 V =H p*( J )? F5A49BB9@1C9? > P _[_ T 8 S )./ K ( @5A1C9>71>4BC? A175C5=@5A1CDA5 T VT ^_S S 3 <9=1C93 3 1C57? AH #' # ,#,55697DA5 Value )#$ ,- 1>4$ , DAA5>C9B<9=9C542 H2 ? >4F9A5F9C81>R _T@8 / C853 89@9B12 <5C? 3 1AAH V 9H .( J I 9 )(( 6 Product Summary Type #) ' ! Package E=%ID*.+%/ Marking (+,C(.C + 5E @175

Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Electrical characteristics, 1CT V S D><5BB? C85AF9B5B@53 96954 Static characteristics A19> B? DA3 52 A51;4? F>E? <C175 V "7G#9HH V =H .I 9 = .( % % J !1C5C8A5B8? <4E? <C175 V =H"_T# V 9H4V =HI 9 V * + , 05A? 71C5E? <C1754A19>3 DAA5>C I 9HH V 9H .V =H T V S % (&) ) r6 V 9H .V =H T V S % )( )(( !1C5 B? DA3 5<51;1753 DAA5>C I =HH V =H .V 9H . % ) )(( Z6 A19> B? DA3 5? > BC1C5A5B9BC1>3 5 R 9H"[Z# V =H .I 9 % *&/ +&, Y" I]MZ^O[ZP\`O_MZOQ g R^ fV 9Hf5*fI 9fR 9H"[Z#YMc I 9 .0 )+- % H Values 5E93 5? > ==G ==G ==5@? GH) V =C893 ;3 ? @@5A1A516? A4A19> 9BE5AC93 1<9>BC9<<19A + 5E @175

Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics + 5E5AB5CA1>B65A3 1@13 9C1>3 5 C ]^^ % -0 % 1<<C9=5 t R % ). % !1C5 81AS5 81A13 C5A9BC93 B.# !1C5C? B? DA3 53 81A75 Q S^ % ,+ % Z8 !1C5C? 4A19>3 81A75 Q SP % 1 % ,F9C3 89>73 81A75 Q ^b % *0 % !1C53 81A75C? C1< Q S % 10 )+( ( DC@DC3 81A75 Q [^^ V 99 .V =H . % /1 )(- Z8 Reverse Diode 9? 453 ? >C9>? DB6? AF1A43 DAA5>C I H % % )(( 6 9? 45@D<B53 DAA5>C I H$\\\`X^Q % % ,(( 9? 456? AF1A4E? <C175 V H9 V =H .I < T V S % (&1 )&* J + 5E5AB5A53 ? E5AHC9=5 t ]] % ,0 % Z^ + 5E5AB5A53 ? E5AH3 81A75 Q ]] % /+ % Z8 .#,55697DA5 6? A71C53 81A75@1A1=5C5A4569>9C9? > V G .#< Pi <'Pt V B T 8 S Values V =H .V 9H f & " I V 99 .V =H I 9 R = V 99 .I 9 V =H + 5E @175

1 Power dissipation 2 Drain current

3 Safe operating area 4 Max. transient thermal impedance I 94R"V 9HT 8 S D 4( Z _T@84R"t \\# @1A1=5C5At \\ @1A1=5C5AD 4t \\'T V B V B V B 10210110010-1 103 102 101 100 10-1 V DS [V] I D [A] <9=9C542 H? > BC1C5 ]Q^U^_MZOQ B9>7<5@D<B5 (&() (&(* (&(- (&) (&* (&- 10010-110-210-310-410-5 0.01 0.1 t p [s] Z thJC [K/W] 120 160 200 0 50 100 150 200 T C [°C] P tot [W] 100 120 0 50 100 150 200 T C [°C] I D [A] + 5E @175

5 Typ. output characteristics 6 Typ. drain-source on resistance I 94R"V 9HT V S R 9H"[Z#4R"I 9T V S @1A1=5C5AV =H @1A1=5C5AV =H 7 Typ. transfer characteristics 8 Typ. forward transconductance I 94R"V =HJV 9Hf5*fI 9fR 9H"[Z#YMc g R^4R"I 9T V S @1A1=5C5AT V . . 0 50 100 150 I D [A] R DS(on) [m ] S S 160 240 320 0 2 4 6 8 V GS [V] I D [A] 120 160 200 0 50 100 150 I D [A] g fs [S] 160 240 320 0 1 2 3 4 5 V DS [V] I D [A] + 5E @175

9 Drain-source on-state resistance 10 Typ. gate threshold voltage R 9H"[Z#4R"T VI 9 V =H . V =H"_T#4R"T VV =H4V 9H @1A1=5C5AI 9 11 Typ. capacitances 12 Forward characteristics of reverse diode C 4R"V 9HV =H @1A1=5C5AT V _d\\ YMc -60 -20 20 60 100 140 180 T j [°C] R DS(on) [m ] V V 0.5 1.5 2.5 3.5 -60 -20 20 60 100 140 180 T j [°C] V GS(th) [V] 8U^^ 8[^^ 8]^^ 104 103 102 101 0 20 40 60 V DS [V] C [pF] S S S S 103 102 101 100 0 0.5 1 1.5 2 V SD [V] I F [A] + 5E @175

13 Avalanche characteristics 14 Typ. gate charge I 6H4R"t 6JR =H " V =H4R"Q SM_QI 9 @D<B54

15 Drain-source breakdown voltage 16 Gate charge waveforms

V 7G"9HH#4R"T VI 9 0 20 40 60 80 100 Q gate [nC] V GS [V] -60 -20 20 60 100 140 180 T j [°C] V BR(DSS) [V] V =H Q gate V S ^"_T# Q S"_T# Q S^ Q SP Q ^b Q g S S S 100 1000 1 10 100 1000 t AV [µs] I AS [A] + 5E @175

PG-TO263-7 (D²-Pak 7pin) + 5E @175

81726 Munich, Germany

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