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Document overview

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Technical content

Features

  • ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
  • Veryhighcommutationruggedness
  • Easytouse/drive
  • Pb-freeplating,Halogenfreemoldcompound
  • Qualifiedforstandardgradeapplications

Applications

PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 700 V RDS(on),max 650 mΩ ID. 10.1 A Qg.typ 23 nC ID,pulse 18 A Eoss@400V 2 µJ Type/OrderingCode Package Marking RelatedLinks IPAN65R650CE PG-TO 220 FullPAK - Narrow Lead 65S650CE see Appendix A

650VCoolMOSªCEPowerTransistor IPAN65R650CE Rev.2.0,2016-04-27Final Data Sheet TableofContents

650VCoolMOSªCEPowerTransistor IPAN65R650CE Rev.2.0,2016-04-27Final Data Sheet 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Continuous drain current1) ID 10.1

6.4 A TC=25°C

TC=100°C Pulsed drain current2) ID,pulse - - 18 A TC=25°C Avalanche energy, single pulse EAS - - 142 mJ ID=1.3A; VDD=50V; see table 11 Avalanche energy, repetitive EAR - - 0.21 mJ ID=1.3A; VDD=50V; see table 11 Avalanche current, repetitive IAR - - 1.3 A - MOSFET dv/dt ruggedness dv/dt - - 50 V/ns VDS=0...480V Gate source voltage (static) VGS -20 - 20 V static; Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz) Power dissipation (Non FullPAK) TO-252 Ptot - - 86 W TC=25°C Storage temperature Tstg -40 - 150 °C - Operating junction temperature Tj -40 - 150 °C - Continuous diode forward current IS - - 7.1 A TC=25°C Diode pulse current2) IS,pulse - - 18 A TC=25°C Reverse diode dv/dt3) dv/dt - - 15 V/ns VDS=0...400V,ISD<=IS,Tj=25°C see table 9 Maximum diode commutation speed dif/dt - - 500 A/µs VDS=0...400V,ISD<=IS,Tj=25°C see table 9 Power dissipation (FullPAK) TO-220FP Ptot - - 28 W TC=25°C Mounting torque (FullPAK) TO-220FP - - - 50 Ncm M2.5 screws Insulation withstand voltage for TO-220FP VISO - - 2500 V Vrms,TC=25°C,t=1min 1) Limited by Tj max.TO252 equivalent, Maximum duty cycle D=0.50 2) Pulse width tp limited by Tj,max 3)IdenticallowsideandhighsideswitchwithidenticalRG

650VCoolMOSªCEPowerTransistor IPAN65R650CE Rev.2.0,2016-04-27Final Data Sheet 2Thermalcharacteristics Table3Thermalcharacteristics(FullPAK)TO-220FP Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - case RthJC - - 4.5 °C/W - Thermal resistance, junction - ambient RthJA - - 80 °C/W leaded Soldering temperature, wavesoldering only allowed at leads Tsold - - 260 °C 1.6mm (0.063 in.) from case for 10s Table4ThermalcharacteristicsTO-252 Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - case RthJC - - 1.45 °C/W - Thermal resistance, junction - ambient RthJA - - 62 °C/W device on PCB, minimal footprint Thermal resistance, junction - ambient for SMD version RthJA - 35 45 °C/W Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70µm thickness) copper area for drain connection and cooling. PCB is vertical without air stream cooling. Soldering temperature, wave & reflow soldering allowed Tsold - - 260 °C reflow MSL1

650VCoolMOSªCEPowerTransistor IPAN65R650CE Rev.2.0,2016-04-27Final Data Sheet 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table5Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 650 - - V VGS=0V,ID=1mA Gate threshold voltage V(GS)th 2.5 3.0 3.5 V VDS=VGS,ID=0.21mA Zero gate voltage drain current IDSS - µA VDS=650,VGS=0V,Tj=25°C VDS=650,VGS=0V,Tj=150°C Gate-source leakage current IGSS - - 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) 0.54 1.40 0.65 - Ω VGS=10V,ID=2.1A,Tj=25°C VGS=10V,ID=2.1A,Tj=150°C Gate resistance RG - 10.5 - Ω f=1MHz,opendrain Table6Dynamiccharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance Ciss - 440 - pF VGS=0V,VDS=100V,f=1MHz Output capacitance Coss - 30 - pF VGS=0V,VDS=100V,f=1MHz Effective output capacitance, energy related1) Co(er) - 21 - pF VGS=0V,VDS=0...480V Effective output capacitance, time related2) Co(tr) - 88 - pF ID=constant,VGS=0V,VDS=0...480V Turn-on delay time td(on) - 10 - ns VDD=400V,VGS=13V,ID=3.2A, RG=6.8Ω ;seetable10 Rise time tr - 8 - ns VDD=400V,VGS=13V,ID=3.2A, RG=6.8Ω ;seetable10 Turn-off delay time td(off) - 64 - ns VDD=400V,VGS=13V,ID=3.2A, RG=6.8Ω ;seetable10 Fall time tf - 11 - ns VDD=400V,VGS=13V,ID=3.2A, RG=6.8Ω ;seetable10 Table7Gatechargecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs - 2.75 - nC VDD=480V,ID=3.2A,VGS=0to10V Gate to drain charge Qgd - 12 - nC VDD=480V,ID=3.2A,VGS=0to10V Gate charge total Qg - 23 - nC VDD=480V,ID=3.2A,VGS=0to10V Gate plateau voltage Vplateau - 5.5 - V VDD=480V,ID=3.2A,VGS=0to10V 1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to80%Vo(BR)DSS 2)Co(tr)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to80%Vo(BR)DSS

650VCoolMOSªCEPowerTransistor IPAN65R650CE Rev.2.0,2016-04-27Final Data Sheet Table8Reversediodecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Diode forward voltage VSD - 0.9 - V VGS=0V,IF=3.2A,Tj=25°C Reverse recovery time trr - 270 - ns VR=400V,IF=3.2A,diF/dt=100A/µs; see table 9 Reverse recovery charge Qrr - 2 - µC VR=400V,IF=3.2A,diF/dt=100A/µs; see table 9 Peak reverse recovery current Irrm - 13 - A VR=400V,IF=3.2A,diF/dt=100A/µs; see table 9

650VCoolMOSªCEPowerTransistor IPAN65R650CE Rev.2.0,2016-04-27Final Data Sheet 4Electricalcharacteristicsdiagrams Diagram2:Powerdissipation(FullPAK) TC[°C] Ptot[W] 100 125 150 Ptot=f(TC) Diagram4:Max.transientthermalimpedance(FullPAK) tp[s] ZthJC[K/W] 10-5 10-4 10-3 10-2 10-1 100 101 10-2 10-1 100 101 0.5 0.2 0.1 0.05 0.02 0.01 single pulse ZthJC=f(tP);parameter:D=tp/T Diagram6:Safeoperatingarea(FullPAK) VDS[V] ID[A] 100 101 102 103 10-4 10-3 10-2 10-1 100 101 102 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram8:Safeoperatingarea(FullPAK) VDS[V] ID[A] 100 101 102 103 10-4 10-3 10-2 10-1 100 101 102 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=80°C;D=0;parameter:tp

650VCoolMOSªCEPowerTransistor IPAN65R650CE Rev.2.0,2016-04-27Final Data Sheet Diagram9:Typ.outputcharacteristics VDS[V] ID[A] 20 V 10 V 8 V 7 V 6 V 5.5 V 5 V 4.5 V ID=f(VDS);Tj=25°C;parameter:VGS Diagram10:Typ.outputcharacteristics VDS[V] ID[A] 20 V 10 V 8 V 7 V 6 V 5.5 V 5 V 4.5 V ID=f(VDS);Tj=125°C;parameter:VGS Diagram11:Typ.drain-sourceon-stateresistance ID[A] RDS(on)[Ω ] 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 10 V 5 V 5.5 V 6 V 6.5 V 7 V RDS(on)=f(ID);Tj=125°C;parameter:VGS Diagram12:Drain-sourceon-stateresistance Tj[°C] RDS(on)[Ω ] -50 -25 100 125 150 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 98% typ RDS(on)=f(Tj);ID=2.1A;VGS=10V

650VCoolMOSªCEPowerTransistor IPAN65R650CE Rev.2.0,2016-04-27Final Data Sheet Diagram13:Typ.transfercharacteristics VGS[V] ID[A] 150 °C 25 °C ID=f(VGS);VDS=20V;parameter:Tj Diagram14:Typ.gatecharge Qgate[nC] VGS[V] 120 V 480 V VGS=f(Qgate);ID=3.2Apulsed;parameter:VDD Diagram15:Forwardcharacteristicsofreversediode VSD[V] IF[A] 0.0 0.5 1.0 1.5 2.0 10-1 100 101 102 25 °C 125 °C IF=f(VSD);parameter:Tj Diagram16:Avalancheenergy Tj[°C] EAS[mJ] 100 125 150 100 125 150 EAS=f(Tj);ID=1.3A;VDD=50V

650VCoolMOSªCEPowerTransistor IPAN65R650CE Rev.2.0,2016-04-27Final Data Sheet Diagram17:Drain-sourcebreakdownvoltage Tj[°C] VBR(DSS)[V] -75 -50 -25 100 125 150 175 580 600 620 640 660 680 700 720 740 VBR(DSS)=f(Tj);ID=1.0mA Diagram18:Typ.capacitances VDS[V] C[pF] 100 200 300 400 500 100 101 102 103 104 Ciss Coss Crss C=f(VDS);VGS=0V;f=1MHz Diagram19:Typ.Cossstoredenergy VDS[V] Eoss[µJ] 100 200 300 400 500 0.0 0.5 1.0 1.5 2.0 2.5 Eoss=f(VDS)

650VCoolMOSªCEPowerTransistor IPAN65R650CE Rev.2.0,2016-04-27Final Data Sheet 5TestCircuits Table9Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform t V ,I Irrm IF VDS 10 %Irrm trr tF tS QF QS dIF / dt dIrr / dt VDS(peak) Qrr = QF +QS trr =tF +tS VDS IF VDS IF Rg1 Rg 2 Rg1 = Rg 2 Table10Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS VGS td(on) td(off)tr ton tf toff 10% 90% VDS VGS Table11Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform VDS V(BR)DS ID VDS VDSID

650VCoolMOSªCEPowerTransistor IPAN65R650CE Rev.2.0,2016-04-27Final Data Sheet 6PackageOutlines 2.5 REVISION0122-01-2016ISSUE DATE EUROPEAN PROJECTION0SCALE 5mm 02.5 DOCUMENT NO.Z8B00180155 A2bDcEe1eLQ¡3L1ND1 0.102 0.377 2.672.47 10.40 1.703.253.0013.45 9.583 0.690.5916.10 0.100 (BSC)0.200 (BSC)3 0.6340.0230.027 0.417 0.0750.1260.1360.541 0.385 Figure1OutlinePG-TO220FullPAK-NarrowLead,dimensionsinmm/inches

650VCoolMOSªCEPowerTransistor IPAN65R650CE Rev.2.0,2016-04-27Final Data Sheet 7AppendixA Table12RelatedLinks

  • IFXCoolMOSTMCEWebpage:www.infineon.com
  • IFXCoolMOSTMCEapplicationnote:www.infineon.com
  • IFXCoolMOSTMCEsimulationmodel:www.infineon.com
  • IFXDesigntools:www.infineon.com

650VCoolMOSªCEPowerTransistor IPAN65R650CE Rev.2.0,2016-04-27Final Data Sheet RevisionHistory IPAN65R650CE Revision:2016-04-27,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2016-04-27 Release of final version TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2016InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.