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Features

  • Best-in-classFOMRDS(on)*Eoss;reducedQg,Ciss,andCoss
  • Best-in-classDPAKRDS(on)
  • Best-in-classV(GS)thof3VandsmallestV(GS)thvariationof±0.5V
  • IntegratedZenerDiodeESDprotection
  • Fullyqualifiedacc.JEDECforIndustrialApplications
  • Fullyoptimizedportfolio Benefits
  • Best-in-classperformance
  • Enablinghigherpowerdensitydesigns,BOMsavingsandlower assemblycosts
  • Easytodriveandtoparallel
  • BetterproductionyieldbyreducingESDrelatedfailures
  • Lessproductionissuesandreducedfieldreturns
  • Easytoselectrightpartsforfinetuningofdesigns Potentialapplications RecommendedforhardandsoftswitchingflybacktopologiesforLED Lighting,lowpowerChargersandAdapters,Audio,AUXpowerand Industrialpower.AlsosuitableforPFCstageinConsumerapplications andSolar. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseperatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj=25°C 800 V RDS(on),max 0.75 Ω Qg,typ 17 nC ID 7 A Eoss @ 500V 1.6 µJ VGS(th),typ 3 V ESD class (HBM) 2 - Type/OrderingCode Package Marking RelatedLinks IPA80R750P7 PG-TO 220 FullPAK 80R750P7 see Appendix A

800VCoolMOSªP7PowerTransistor IPA80R750P7 Rev.2.1,2018-02-07Final Data Sheet TableofContents

800VCoolMOSªP7PowerTransistor IPA80R750P7 Rev.2.1,2018-02-07Final Data Sheet 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Continuous drain current1) ID

4.6 A TC=25°C

TC=100°C Pulsed drain current2) ID,pulse - - 17 A TC=25°C Avalanche energy, single pulse EAS - - 16 mJ ID=1.1A; VDD=50V Avalanche energy, repetitive EAR - - 0.14 mJ ID=1.1A; VDD=50V Avalanche current, repetitive IAR - - 1.1 A - MOSFET dv/dt ruggedness dv/dt - - 100 V/ns VDS=0to400V Gate source voltage VGS -20 -30

30 V static;

AC (f>1 Hz) Power dissipation Ptot - - 27 W TC=25°C Operating and storage temperature Tj,Tstg -55 - 150 °C - Mounting torque - - - 50 Ncm M2.5 screw Continuous diode forward current IS - - 3.7 A TC=25°C Diode pulse current2) IS,pulse - - 17 A TC=25°C Reverse diode dv/dt3) dv/dt - - 1 V/ns VDS=0to400V,ISD<=1.4A,Tj=25°C Maximum diode commutation speed3) dif/dt - - 50 A/µs VDS=0to400V,ISD<=1.4A,Tj=25°C Insulation withstand voltage VISO - - 2500 V Vrms,TC=25°C,t=1min 2Thermalcharacteristics Table3Thermalcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - case RthJC - - 4.7 °C/W - Thermal resistance, junction - ambient RthJA - - 80 °C/W leaded Thermal resistance, junction - ambient for SMD version RthJA - - - °C/W n.a. Soldering temperature, wavesoldering only allowed at leads Tsold - - 260 °C 1.6 mm (0.063 in.) from case for 10s 1) TO220 equivalent. Limited by Tj max. Maximum duty cycle D=0.5 2) Pulse width tp limited by Tj,max 3)VDClink=400V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG;tcond<2µs

800VCoolMOSªP7PowerTransistor IPA80R750P7 Rev.2.1,2018-02-07Final Data Sheet 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 800 - - V VGS=0V,ID=1mA Gate threshold voltage VGS(th) 2.5 3 3.5 V VDS=VGS,ID=0.14mA Zero gate voltage drain current IDSS - µA VDS=800V,VGS=0V,Tj=25°C VDS=800V,VGS=0V,Tj=150°C Gate-source leakage curent incl. zener diode IGSS - - 1 µA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) 0.64 1.66 0.75 - Ω VGS=10V,ID=2.7A,Tj=25°C VGS=10V,ID=2.7A,Tj=150°C Gate resistance RG - 1 - Ω f=250kHz,opendrain Table5Dynamiccharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance Ciss - 460 - pF VGS=0V,VDS=500V,f=250kHz Output capacitance Coss - 9 - pF VGS=0V,VDS=500V,f=250kHz Effective output capacitance, energy related1) Co(er) - 13 - pF VGS=0V,VDS=0to500V Effective output capacitance, time related2) Co(tr) - 164 - pF ID=constant,VGS=0V,VDS=0to500V Turn-on delay time td(on) - 8 - ns VDD=400V,VGS=13V,ID=2.7A, RG=12Ω Rise time tr - 8 - ns VDD=400V,VGS=13V,ID=2.7A, RG=12Ω Turn-off delay time td(off) - 40 - ns VDD=400V,VGS=13V,ID=2.7A, RG=12Ω Fall time tf - 20 - ns VDD=400V,VGS=13V,ID=2.7A, RG=12Ω Table6Gatechargecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs - 2 - nC VDD=640V,ID=2.7A,VGS=0to10V Gate to drain charge Qgd - 7 - nC VDD=640V,ID=2.7A,VGS=0to10V Gate charge total Qg - 17 - nC VDD=640V,ID=2.7A,VGS=0to10V Gate plateau voltage Vplateau - 4.5 - V VDD=640V,ID=2.7A,VGS=0to10V 1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to500V 2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to500V

800VCoolMOSªP7PowerTransistor IPA80R750P7 Rev.2.1,2018-02-07Final Data Sheet Table7Reversediodecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Diode forward voltage VSD - 0.9 - V VGS=0V,IF=2.7A,Tf=25°C Reverse recovery time trr - 630 - ns VR=400V,IF=1.4A,diF/dt=50A/µs Reverse recovery charge Qrr - 5.2 - µC VR=400V,IF=1.4A,diF/dt=50A/µs Peak reverse recovery current Irrm - 13 - A VR=400V,IF=1.4A,diF/dt=50A/µs

800VCoolMOSªP7PowerTransistor IPA80R750P7 Rev.2.1,2018-02-07Final Data Sheet 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation TC[°C] Ptot[W] 100 125 150 Ptot=f(TC) Diagram2:Safeoperatingarea VDS[V] ID[A] 100 101 102 103 10-3 10-2 10-1 100 101 102 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram3:Safeoperatingarea VDS[V] ID[A] 100 101 102 103 10-3 10-2 10-1 100 101 102 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=80°C;D=0;parameter:tp Diagram4:Max.transientthermalimpedance tp[s] ZthJC[K/W] 10-5 10-4 10-3 10-2 10-1 100 10-1 100 101 0.5 0.2 0.1 0.05 0.02 0.01 single pulse ZthJC=f(tP);parameter:D=tp/T

800VCoolMOSªP7PowerTransistor IPA80R750P7 Rev.2.1,2018-02-07Final Data Sheet Diagram5:Typ.outputcharacteristics VDS[V] ID[A] 20 V 10 V 8 V 7 V 6 V 5.5 V 5 V 4.5 V ID=f(VDS);Tj=25°C;parameter:VGS Diagram6:Typ.outputcharacteristics VDS[V] ID[A] 20 V 10 V 8 V 7 V 6 V 5.5 V 5 V 4.5 V ID=f(VDS);Tj=125°C;parameter:VGS Diagram7:Typ.drain-sourceon-stateresistance ID[A] RDS(on)[Ω ] 0.5 1.0 1.5 2.0 2.5 3.0 5 V 5.5 V 6 V 6.5 V 7 V 10 V RDS(on)=f(ID);Tj=125°C;parameter:VGS Diagram8:Drain-sourceon-stateresistance Tj[°C] RDS(on)[Ω ] -50 -25 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 98% typ RDS(on)=f(Tj);ID=2.7A;VGS=10V

800VCoolMOSªP7PowerTransistor IPA80R750P7 Rev.2.1,2018-02-07Final Data Sheet Diagram9:Typ.transfercharacteristics VGS[V] ID[A] 25 °C 150 °C ID=f(VGS);VDS=20V;parameter:Tj Diagram10:Typ.gatecharge Qgate[nC] VGS[V] 640 V 120 V VGS=f(Qgate);ID=2.7Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode VSD[V] IF[A] 0.0 0.5 1.0 1.5 2.0 2.5 10-1 100 101 102 25 °C 125 °C IF=f(VSD);parameter:Tj Diagram12:Avalancheenergy Tj[°C] EAS[mJ] 100 125 150 EAS=f(Tj);ID=1.1A;VDD=50V

800VCoolMOSªP7PowerTransistor IPA80R750P7 Rev.2.1,2018-02-07Final Data Sheet Diagram13:Drain-sourcebreakdownvoltage Tj[°C] VBR(DSS)[V] -75 -50 -25 100 125 150 175 700 750 800 850 900 950 VBR(DSS)=f(Tj);ID=1mA Diagram14:Typ.capacitances VDS[V] C[pF] 100 200 300 400 500 10-1 100 101 102 103 104 Ciss Coss Crss C=f(VDS);VGS=0V;f=250kHz Diagram15:Typ.Cossstoredenergy VDS[V] Eoss[µJ] 100 200 300 400 500 600 700 800 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Eoss=f(VDS)

800VCoolMOSªP7PowerTransistor IPA80R750P7 Rev.2.1,2018-02-07Final Data Sheet 5TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform VDS IF R g1 R g 2 R g1 = R g 2 Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS VGS td(on) td(off)tr ton tf toff 10% 90% VDS VGS Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform VDS V(BR)DS ID VDS VDSID

800VCoolMOSªP7PowerTransistor IPA80R750P7 Rev.2.1,2018-02-07Final Data Sheet 6PackageOutlines H b Dcb2 Ee1eLQ¡3L1ND1 ADIMA1 DOCUMENT NO.Z8B00003319 2.5 REVISION0618-03-2016ISSUE DATE EUROPEAN PROJECTION 1.130 0.177MIN0.0950.026 0.0160.6170.0370.092 0.394 0.5030.1160.1240.111 0.353 2.862.42 0.9515.670.40 0.65 10.00 2.833.152.9512.78 8.97329.75 0.90 0.631.5116.15 3.503.383.4513.75 10.659.83 0.100 (BSC)0.20031.171 0.0590.6360.025 0.035 0.419 0.1360.1330.1380.541 0.3870 INCHES0.193MAX0.112SCALE 5mm DIMENSIONS DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. Figure1OutlinePG-TO220FullPAK,dimensionsinmm/inches

800VCoolMOSªP7PowerTransistor IPA80R750P7 Rev.2.1,2018-02-07Final Data Sheet 7AppendixA Table11RelatedLinks

  • IFXCoolMOSWebpage:www.infineon.com
  • IFXDesigntools:www.infineon.com

800VCoolMOSªP7PowerTransistor IPA80R750P7 Rev.2.1,2018-02-07Final Data Sheet RevisionHistory IPA80R750P7 Revision:2018-02-07,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2017-06-07 Release of final version 2.1 2018-02-07 Corrected front page text TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2018InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.