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MetalOxideSemiconductorFieldEffectTransistor CoolMOS™CE 800VCoolMOS™CEPowerTransistor IPA80R310CE DataSheet Rev.2.1 Final PowerManagement&Multimarket

800VCoolMOS™CEPowerTransistor IPA80R310CE Rev.2.1,2015-06-23Final Data Sheet TO-220FP Drain Pin 2, Tab Gate Pin 1 Source Pin 3 1Description CoolMOS™CEisarevolutionarytechnologyforhighvoltagepower MOSFETs.Thehighvoltagecapabilitycombinessafetywithperformance andruggednesstoallowstabledesignsathighestefficiencylevel. CoolMOS™800VCEcomeswithselectedpackagechoiceofferingthe benefitofreducedsystemcostsandhigherpowerdensitydesigns.

Features

  • Highvoltagetechnology
  • Extremedv/dtrated
  • Highpeakcurrentcapability
  • Lowgatecharge
  • Loweffectivecapacitances
  • Pb-freeplating,RoHSCompliant,Halogenfreemoldcompound
  • Qualifiedforconsumergradeapplications

Applications

LEDLightingandAdapterinQRFlybacktopology Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj=25°C 800 V RDS(on),max 310 mΩ Qg.typ 91 nC ID,pulse 51 A Eoss@400V 6.7 µJ Body diode di/dt 400 A/µs Type/OrderingCode Package Marking RelatedLinks IPA80R310CE PG-TO 220 FullPAK 8R310CE see Appendix A

800VCoolMOS™CEPowerTransistor IPA80R310CE Rev.2.1,2015-06-23Final Data Sheet TableofContents

800VCoolMOS™CEPowerTransistor IPA80R310CE Rev.2.1,2015-06-23Final Data Sheet 2Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Continuous drain current1) ID 16.7

10.6 A TC = 25°C

TC = 100°C Pulsed drain current2) ID,pulse - - 51 A TC=25°C Avalanche energy, single pulse EAS - - 670 mJ ID=3.4A; VDD=50V; see table 10 Avalanche energy, repetitive EAR - - 0.50 mJ ID=3.4A; VDD=50V; see table 10 Avalanche current, repetitive IAR - - 3.40 A - MOSFET dv/dt ruggedness dv/dt - - 50 V/ns VDS=0...640V Gate source voltage (static) VGS -20 - 20 V static; Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz) Power dissipation Ptot - - 35 W TC=25°C Storage temperature Tstg -40 - 150 °C - Operating junction temperature Tj -40 - 150 °C - Mounting torque - - - 50 Ncm M2.5 screws Continuous diode forward current IS - - 16.7 A TC=25°C Diode pulse current2) IS,pulse - - 51 A TC=25°C Reverse diode dv/dt3) dv/dt - - 4 V/ns VDS=0...400V,ISD<=IS,Tj=25°C see table 8 Maximum diode commutation speed dif/dt - - 400 A/µs VDS=0...400V,ISD<=IS,Tj=25°C see table 8 Insulation withstand voltage for TO-220FP VISO - - 2500 V Vrms,TC=25°C,t=1min 1) Limited by Tj max <150°C. 2) Pulse width tp limited by Tj,max 3)IdenticallowsideandhighsideswitchwithidenticalRG

800VCoolMOS™CEPowerTransistor IPA80R310CE Rev.2.1,2015-06-23Final Data Sheet 3Thermalcharacteristics Table3ThermalcharacteristicsTO-220FullPAK Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - case RthJC - - 3.6 °C/W - Thermal resistance, junction - ambient RthJA - - 80 °C/W leaded Soldering temperature, wavesoldering only allowed at leads Tsold - - 260 °C 1.6mm (0.063 in.) from case for 10s

800VCoolMOS™CEPowerTransistor IPA80R310CE Rev.2.1,2015-06-23Final Data Sheet 4Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 800 - - V VGS=0V,ID=0.25mA Gate threshold voltage V(GS)th 2.1 3.0 3.9 V VDS=VGS,ID=1mA Zero gate voltage drain current IDSS 250 µA VDS=800,VGS=0V,Tj=25°C VDS=800,VGS=0V,Tj=150°C Gate-source leakage current IGSS - - 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) 0.25 0.78 0.31 - Ω VGS=10V,ID=11A,Tj=25°C VGS=10V,ID=11A,Tj=150°C Gate resistance RG - 0.7 - Ω f=1MHz,opendrain Table5Dynamiccharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance Ciss - 2320 - pF VGS=0V,VDS=100V,f=1MHz Output capacitance Coss - 90 - pF VGS=0V,VDS=100V,f=1MHz Effective output capacitance, energy related1) Co(er) - 59 - pF VGS=0V,VDS=0...480V Effective output capacitance, time related2) Co(tr) - 124 - pF ID=constant,VGS=0V,VDS=0...480V Turn-on delay time td(on) - 25 - ns VDD=400V,VGS=10V,ID=16.7A, RG=4.7Ω ;seetable9 Rise time tr - 15 - ns VDD=400V,VGS=10V,ID=16.7A, RG=4.7Ω ;seetable9 Turn-off delay time td(off) - 72 - ns VDD=400V,VGS=10V,ID=16.7A, RG=4.7Ω ;seetable9 Fall time tf - 6 - ns VDD=400V,VGS=10V,ID=16.7A, RG=4.7Ω ;seetable9 Table6Gatechargecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs - 12 - nC VDD=640V,ID=16.7A,VGS=0to10V Gate to drain charge Qgd - 46 - nC VDD=640V,ID=16.7A,VGS=0to10V Gate charge total Qg - 91 - nC VDD=640V,ID=16.7A,VGS=0to10V Gate plateau voltage Vplateau - 6.0 - V VDD=640V,ID=16.7A,VGS=0to10V 1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to480V 2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to480V

800VCoolMOS™CEPowerTransistor IPA80R310CE Rev.2.1,2015-06-23Final Data Sheet Table7Reversediodecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Diode forward voltage VSD - 1 - V VGS=0V,IF=16.7A,Tj=25°C Reverse recovery time trr - 550 - ns VR=400V,IF=16.7A,diF/dt=100A/µs; see table 8 Reverse recovery charge Qrr - 15 - µC VR=400V,IF=16.7A,diF/dt=100A/µs; see table 8 Peak reverse recovery current Irrm - 51 - A VR=400V,IF=16.7A,diF/dt=100A/µs; see table 8

800VCoolMOS™CEPowerTransistor IPA80R310CE Rev.2.1,2015-06-23Final Data Sheet 5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation TC[°C] Ptot[W] 100 125 150 Ptot=f(TC) Diagram2:Safeoperatingarea VDS[V] ID[A] 100 101 102 103 10-4 10-3 10-2 10-1 100 101 102 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram3:Safeoperatingarea VDS[V] ID[A] 100 101 102 103 10-4 10-3 10-2 10-1 100 101 102 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=80°C;D=0;parameter:tp Diagram4:Max.transientthermalimpedance tp[s] ZthJC[K/W] 10-5 10-4 10-3 10-2 10-1 100 101 10-2 10-1 100 101 0.5 0.2 0.1 0.05 0.02 0.01 single pulse ZthJC=f(tP);parameter:D=tp/T

800VCoolMOS™CEPowerTransistor IPA80R310CE Rev.2.1,2015-06-23Final Data Sheet Diagram5:Typ.outputcharacteristics VDS[V] ID[A] 20 V 10 V 6.5 V 6 V 5.5 V 5 V ID=f(VDS);Tj=25°C;tp=10µs;parameter:VGS Diagram6:Typ.outputcharacteristics VDS[V] ID[A] 20 V 10 V 6 V 5.5 V 5 V 4.5 V ID=f(VDS);Tj=150°C;tp=10µs;parameter:VGS Diagram7:Typ.drain-sourceon-stateresistance ID[A] RDS(on)[Ω ] 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 4 V 4.5 V 5 V 5.5 V 6 V 6.5 V 10 V RDS(on)=f(ID);Tj=150°C;parameter:VGS Diagram8:Drain-sourceon-stateresistance Tj[°C] RDS(on)[Ω ] -50 -25 100 125 150 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 98% typ RDS(on)=f(Tj);ID=11.0A;VGS=10V

800VCoolMOS™CEPowerTransistor IPA80R310CE Rev.2.1,2015-06-23Final Data Sheet Diagram9:Typ.transfercharacteristics VGS[V] ID[A] 150 °C 25 °C ID=f(VGS);|VDS|>2|ID|RDS(on)max;tp=10µs;parameter:Tj Diagram10:Typ.gatecharge Qgate[nC] VGS[V] 100 160 V 640 V VGS=f(Qgate);ID=17Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode VSD[V] IF[A] 0.0 0.5 1.0 1.5 2.0 10-1 100 101 102 25 °C 150 °C IF=f(VSD);tp=10µs;parameter:Tj Diagram12:Avalancheenergy Tj[°C] EAS[mJ] 100 125 150 100 200 300 400 500 600 700 EAS=f(Tj);ID=3.4A;VDD=50V

800VCoolMOS™CEPowerTransistor IPA80R310CE Rev.2.1,2015-06-23Final Data Sheet Diagram13:Drain-sourcebreakdownvoltage Tj[°C] VBR(DSS)[V] -75 -50 -25 100 125 150 175 680 700 720 740 760 780 800 820 840 860 880 900 920 940 960 VBR(DSS)=f(Tj);ID=0.25mA Diagram14:Typ.capacitances VDS[V] C[pF] 100 200 300 400 500 100 101 102 103 104 Ciss Coss Crss C=f(VDS);VGS=0V;f=1MHz Diagram15:Typ.Cossstoredenergy VDS[V] Eoss[µJ] 100 200 300 400 500 600 700 800 Eoss=f(VDS)

800VCoolMOS™CEPowerTransistor IPA80R310CE Rev.2.1,2015-06-23Final Data Sheet 6TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform t V ,I Irrm IF VDS 10 %Irrm trr tF tS QF QS dIF / dt dIrr / dt VDS(peak) Qrr = QF +QS trr =tF +tS VDS IF VDS IF Rg1 Rg 2 Rg1 = Rg 2 Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS VGS td(on) td(off)tr ton tf toff 10% 90% VDS VGS Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform VDS V(BR)DS ID VDS VDSID

800VCoolMOS™CEPowerTransistor IPA80R310CE Rev.2.1,2015-06-23Final Data Sheet 7PackageOutlines ),/ )1(7/*06 01" Z8B00003319 2.5 4*8,5,10 05-05-2014 ,557* )'6* 1.130 0.177 MIN 0.095 0.026 0.016 0.617 0.037 0.092 0.394 0.503 0.116 0.124 0.111 0.353 2.862.42 2.54 (BSC) 5.08 28.70 0.95 15.67 0.40 0.65 10.00 2.83 3.15 2.95 12.78 8.97 29.75 0.90 0.63 1.51 16.15 3.50 3.38 3.45 13.75 10.65 9.83 /,..,/*6*45 MIN 4.50 2.34 MAX 4.90 2.85 0.113 0.100 (BSC) 0.200 1.171 0.059 0.636 0.025 0.035 0.419 0.136 0.133 0.138 0.541 0.387 ,0(+*5 0.193 MAX 0.112 5('.* 5mm 9& 0.026 0.65 1.51 0.059 9% 0.026 0.65 1.38 0.054 Dimensions do not include mold flash, protrusions or gate burrs Figure 1 Outline PG-TO 220 FullPAK, dimensions in mm/inches

800V CoolMOS™ CE Power Transistor IPA80R310CE Rev. 2.1, 2015-06-23Final Data Sheet

8 Appendix A

  • IFX CoolMOS TM CE Webpage: www.infineon.com
  • IFX CoolMOS TM CE application note: www.infineon.com
  • IFX CoolMOS TM CE simulation model: www.infineon.com
  • IFX Design tools: www.infineon.com

800V CoolMOS™ CE Power Transistor IPA80R310CE Rev. 2.1, 2015-06-23Final Data Sheet

Revision History

Revision: 2015-06-23, Rev. 2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2014-09-25 Release of final version 2.1 2015-06-23 Continuous current Id update We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Published by Infineon Technologies AG

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© 2015 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com ). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.