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Technical content

Features

  • ExtremelylowlossesduetoverylowFOMRDS(on)*QgandRDS(on)*Eoss
  • Excellentthermalbehavior
  • IntegratedESDprotectiondiode
  • Lowswitchinglosses(Eoss)
  • Productvalidationacc.JEDECStandard Benefits
  • Costcompetitivetechnology
  • Lowertemperature
  • HighESDruggedness
  • Enablesefficiencygainsathigherswitchingfrequencies
  • Enableshighpowerdensitydesignsandsmallformfactors Potentialapplications RecommendedforFlybacktopologiesforexampleusedinChargers, Adapters,LightingApplications,etc. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseperatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj=25°C 700 V RDS(on),max 0.36 Ω Qg,typ 16.4 nC ID,pulse 34 A Eoss @ 400V 1.8 µJ V(GS)th,typ 3 V ESD class (HBM) 2 Type/OrderingCode Package Marking RelatedLinks IPA70R360P7S PG-TO 220 FullPAK 70S360P7 see Appendix A

700VCoolMOSªP7PowerTransistor IPA70R360P7S Rev.2.1,2018-02-12Final Data Sheet TableofContents

700VCoolMOSªP7PowerTransistor IPA70R360P7S Rev.2.1,2018-02-12Final Data Sheet 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Continuous drain current1) ID 12.5

7.5 A TC = 20°C

TC = 100°C Pulsed drain current2) ID,pulse - - 34.0 A TC=25°C Application (Flyback) relevant avalanche current, single pulse3) IAS - - 4.5 A measured with standard leakage inductance of transformer of 10µH MOSFET dv/dt ruggedness dv/dt - - 100 V/ns VDS=0...400V Gate source voltage VGS -16 -30

30 V static;

AC (f>1 Hz) Power dissipation Ptot - - 26.5 W TC=25°C Operating and storage temperature Tj,Tstg -40 - 150 °C - Continuous diode forward current IS - - 5.7 A TC=25°C Diode pulse current2) IS,pulse - - 34.0 A TC = 25°C Reverse diode dv/dt4) dv/dt - - 1 V/ns VDS=0...400V,ISD<=IS,Tj=25°C Maximum diode commutation speed4) dif/dt - - 50 A/µs VDS=0...400V,ISD<=IS,Tj=25°C Insulation withstand voltage VISO - - 2500 V Vrms, TC=25°C, t=1min 2Thermalcharacteristics Table3Thermalcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction RthJC - - 4.7 °C/W - Thermal resistance, junction - ambient RthJA - - 80 °C/W leaded Thermal resistance, junction - ambient for SMD version RthJA - - - °C/W n.a. Soldering temperature, wavesoldering only allowed at leads Tsold - - 260 °C 1.6 mm (0.063 in.) from case for 10s 1) DPAK / IPAK equivalent. Limited by Tj max. Tj = 20°C. Maximum duty cycle D=0.5 2) Pulse width tp limited by Tj,max 3) Proven during verification test. For explanation please read AN - CoolMOSTM 700V P7. 4)VDClink=400V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG

700VCoolMOSªP7PowerTransistor IPA70R360P7S Rev.2.1,2018-02-12Final Data Sheet 3Electricalcharacteristics Table4Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 700 - - V VGS=0V,ID=1mA Gate threshold voltage V(GS)th 2.50 3 3.50 V VDS=VGS,ID=0.15mA Zero gate voltage drain current IDSS - µA VDS=700V,VGS=0V,Tj=25°C VDS=700V,VGS=0V,Tj=150°C Gate-source leakage current incl. Zener diode IGSS - - 1 µA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) 0.30 0.67 0.36 - Ω VGS=10V,ID=3.0A,Tj=25°C VGS=10V,ID=3.0A,Tj=150°C Gate resistance RG - 30 - Ω f=1MHz,opendrain Table5Dynamiccharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance Ciss - 517 - pF VGS=0V,VDS=400V,f=250kHz Output capacitance Coss - 11 - pF VGS=0V,VDS=400V,f=250kHz Effective output capacitance, energy related1) Co(er) - 27 - pF VGS=0V,VDS=0...400V Effective output capacitance, time related2) Co(tr) - 329 - pF ID=constant,VGS=0V,VDS=0...400V Turn-on delay time td(on) - 19 - ns VDD=400V,VGS=13V,ID=2.3A, RG=5.3Ω Rise time tr - 8 - ns VDD=400V,VGS=13V,ID=2.3A, RG=5.3Ω Turn-off delay time td(off) - 100 - ns VDD=400V,VGS=13V,ID=2.3A, RG=5.3Ω Fall time tf - 18 - ns VDD=400V,VGS=13V,ID=2.3A, RG=5.3Ω Table6Gatechargecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs - 2.3 - nC VDD=400V,ID=2.3A,VGS=0to10V Gate to drain charge Qgd - 6.0 - nC VDD=400V,ID=2.3A,VGS=0to10V Gate charge total Qg - 16.4 - nC VDD=400V,ID=2.3A,VGS=0to10V Gate plateau voltage Vplateau - 4.4 - V VDD=400V,ID=2.3A,VGS=0to10V 1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V 2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V

700VCoolMOSªP7PowerTransistor IPA70R360P7S Rev.2.1,2018-02-12Final Data Sheet Table7Reversediodecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Diode forward voltage VSD - 0.9 - V VGS=0V,IF=3.8A,Tj=25°C Reverse recovery time trr - 210 - ns VR=400V,IF=2.3A,diF/dt=50A/µs Reverse recovery charge Qrr - 1 - µC VR=400V,IF=2.3A,diF/dt=50A/µs Peak reverse recovery current Irrm - 10 - A VR=400V,IF=2.3A,diF/dt=50A/µs

700VCoolMOSªP7PowerTransistor IPA70R360P7S Rev.2.1,2018-02-12Final Data Sheet 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation TC[°C] Ptot[W] 100 125 150 Ptot=f(TC) Diagram2:Safeoperatingarea VDS[V] ID[A] 100 101 102 103 10-3 10-2 10-1 100 101 102 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram3:Safeoperatingarea VDS[V] ID[A] 100 101 102 103 10-3 10-2 10-1 100 101 102 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=80°C;D=0;parameter:tp Diagram4:Max.transientthermalimpedance tp[s] ZthJC[K/W] 10-5 10-4 10-3 10-2 10-1 100 10-1 100 101 0.5 0.2 0.1 0.05 0.02 0.01 single pulse ZthJC=f(tP);parameter:D=tp/T

700VCoolMOSªP7PowerTransistor IPA70R360P7S Rev.2.1,2018-02-12Final Data Sheet Diagram5:Typ.outputcharacteristics VDS[V] ID[A] 20 V 10 V 8 V 7 V 6 V 5.5 V 5 V 4.5 V ID=f(VDS);Tj=25°C;parameter:VGS Diagram6:Typ.outputcharacteristics VDS[V] ID[A] 20 V 10 V 8 V 7 V 6 V 5.5 V 5 V 4.5 V ID=f(VDS);Tj=125°C;parameter:VGS Diagram7:Typ.drain-sourceon-stateresistance ID[A] RDS(on)[Ω ] 0.00 0.20 0.40 0.60 0.80 1.00 1.20 1.40 1.60 1.80 2.00 5 V 5.5 V 6 V 6.5 V 7 V 10 V RDS(on)=f(ID);Tj=125°C;parameter:VGS Diagram8:Drain-sourceon-stateresistance Tj[°C] RDS(on)[Ω ] -50 -25 100 125 150 0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 98% typ RDS(on)=f(Tj);ID=3.0A;VGS=10V

700VCoolMOSªP7PowerTransistor IPA70R360P7S Rev.2.1,2018-02-12Final Data Sheet Diagram9:Typ.transfercharacteristics VGS[V] ID[A] 25 °C 150 °C ID=f(VGS);VDS=20V;parameter:Tj Diagram10:Typ.gatecharge Qgate[nC] VGS[V] 400 V 120 V VGS=f(Qgate);ID=2.3Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode VSD[V] IF[A] 0.0 0.5 1.0 1.5 2.0 10-1 100 101 102 25 °C 125 °C IF=f(VSD);parameter:Tj Diagram13:Drain-sourcebreakdownvoltage Tj[°C] VBR(DSS)[V] -75 -50 -25 100 125 150 175 600 620 640 660 680 700 720 740 760 780 800 820 840 VBR(DSS)=f(Tj);ID=1mA

700VCoolMOSªP7PowerTransistor IPA70R360P7S Rev.2.1,2018-02-12Final Data Sheet Diagram14:Typ.capacitances VDS[V] C[pF] 100 200 300 400 500 10-1 100 101 102 103 104 Ciss Coss Crss C=f(VDS);VGS=0V;f=250kHz Diagram15:Typ.Cossstoredenergy VDS[V] Eoss[µJ] 100 200 300 400 500 600 700 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Eoss=f(VDS)

700VCoolMOSªP7PowerTransistor IPA70R360P7S Rev.2.1,2018-02-12Final Data Sheet 5TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform VDS IF R g1 R g 2 R g1 = R g 2 Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS VGS td(on) td(off)tr ton tf toff 10% 90% VDS VGS Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform VDS V(BR)DS ID VDS VDSID

700VCoolMOSªP7PowerTransistor IPA70R360P7S Rev.2.1,2018-02-12Final Data Sheet 6PackageOutlines H b Dcb2 Ee1eLQ¡3L1ND1 ADIMA1 DOCUMENT NO.Z8B00181328 2.5 REVISION0129-04-2016ISSUE DATE EUROPEAN PROJECTION 1.130 0.177MIN0.0950.026 0.0160.6170.0470.092 0.394 0.5030.1180.1240.111 0.353 2.862.42 1.2015.670.40 0.65 10.00 2.833.153.0012.78 8.97329.75 0.90 0.631.5016.15 3.503.383.4513.75 10.659.83 0.100 (BSC)0.20031.171 0.0590.6360.025 0.035 0.419 0.1360.1330.1380.541 0.3870 INCHES0.193MAX0.110SCALE 5mm DIMENSIONS DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. Figure1OutlinePG-TO220FullPAK,dimensionsinmm/inches

700VCoolMOSªP7PowerTransistor IPA70R360P7S Rev.2.1,2018-02-12Final Data Sheet 7AppendixA Table11RelatedLinks

  • IFXCoolMOSªP7Webpage:www.infineon.com
  • IFXDesigntools:www.infineon.com

700VCoolMOSªP7PowerTransistor IPA70R360P7S Rev.2.1,2018-02-12Final Data Sheet RevisionHistory IPA70R360P7S Revision:2018-02-12,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2016-10-11 Release of final version 2.1 2018-02-12 Corrected front page text TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2018InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.