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Document overview

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Technical content

Features

  • ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
  • Veryhighcommutationruggedness
  • Easytouse/drive
  • Pb-freeplating,Halogenfreemoldcompound
  • Qualifiedforstandardgradeapplications

Applications

PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting. Pleasenote:Note1:ForMOSFETparallelingtheuseofferritebeadson thegateorseparatetotempolesisgenerallyrecommended. Note2:*6R650CEisFullPAKmarkingonly Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 650 V RDS(on),max 650 mΩ Id. 9.9 A Qg.typ 20.5 nC ID,pulse 19 A Eoss@400V 1.9 µJ Type/OrderingCode Package Marking RelatedLinks IPD60R650CE PG-TO 252 IPA60R650CE PG-TO 220 FullPAK 60S650CE / 6R650CE* see Appendix A

600VCoolMOSªCEPowerTransistor IPD60R650CE,IPA60R650CE Rev.2.2,2016-08-08Final Data Sheet TableofContents

600VCoolMOSªCEPowerTransistor IPD60R650CE,IPA60R650CE Rev.2.2,2016-08-08Final Data Sheet 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Continuous drain current1) ID 9.9

6.2 A TC=25°C

TC=100°C Pulsed drain current2) ID,pulse - - 19 A TC=25°C Avalanche energy, single pulse EAS - - 133 mJ ID=1.3A; VDD=50V; see table 11 Avalanche energy, repetitive EAR - - 0.20 mJ ID=1.3A; VDD=50V; see table 11 Avalanche current, repetitive IAR - - 1.3 A - MOSFET dv/dt ruggedness dv/dt - - 50 V/ns VDS=0...480V Gate source voltage (static) VGS -20 - 20 V static; Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz) Power dissipation (Non FullPAK) TO-251 Ptot - - 82 W TC=25°C Storage temperature Tstg -40 - 150 °C - Operating junction temperature Tj -40 - 150 °C - Continuous diode forward current IS - - 7 A TC=25°C Diode pulse current2) IS,pulse - - 19 A TC=25°C Reverse diode dv/dt3) dv/dt - - 15 V/ns VDS=0...400V,ISD<=IS,Tj=25°C see table 9 Maximum diode commutation speed dif/dt - - 500 A/µs VDS=0...400V,ISD<=IS,Tj=25°C see table 9 Power dissipation (FullPAK) TO-220FP Ptot - - 28 W TC=25°C Mounting torque (FullPAK) TO-220FP - - - 50 Ncm M2.5 screws Insulation withstand voltage for TO-220FP VISO - - 2500 V Vrms,TC=25°C,t=1min 2Thermalcharacteristics Table3Thermalcharacteristics(FullPAK)TO-220FP Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - case RthJC - - 4.5 °C/W - Thermal resistance, junction - ambient RthJA - - 80 °C/W leaded Soldering temperature, wavesoldering only allowed at leads Tsold - - 260 °C 1.6mm (0.063 in.) from case for 10s 1) Limited by Tj max. TO252 equivalent, Maximum duty cycle D=0.50 2) Pulse width tp limited by Tj,max 3)IdenticallowsideandhighsideswitchwithidenticalRG

600VCoolMOSªCEPowerTransistor IPD60R650CE,IPA60R650CE Rev.2.2,2016-08-08Final Data Sheet Table4ThermalcharacteristicsTO-252 Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - case RthJC - - 1.52 °C/W - Thermal resistance, junction - ambient RthJA - - 62 °C/W device on PCB, minimal footprint Thermal resistance, junction - ambient for SMD version RthJA - 35 45 °C/W Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70µm thickness) copper area for drain connection and cooling. PCB is vertical without air stream cooling. Soldering temperature, wave & reflow soldering allowed Tsold - - 260 °C reflow MSL3

600VCoolMOSªCEPowerTransistor IPD60R650CE,IPA60R650CE Rev.2.2,2016-08-08Final Data Sheet 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table5Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 600 - - V VGS=0V,ID=0.25mA Gate threshold voltage V(GS)th 2.5 3.0 3.5 V VDS=VGS,ID=0.2mA Zero gate voltage drain current IDSS - µA VDS=600,VGS=0V,Tj=25°C VDS=600,VGS=0V,Tj=150°C Gate-source leakage current IGSS - - 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) 0.54 1.40 0.65 - Ω VGS=10V,ID=2.4A,Tj=25°C VGS=10V,ID=2.4A,Tj=150°C Gate resistance RG - 10 - Ω f=1MHz,opendrain Table6Dynamiccharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance Ciss - 440 - pF VGS=0V,VDS=100V,f=1MHz Output capacitance Coss - 30 - pF VGS=0V,VDS=100V,f=1MHz Effective output capacitance, energy related1) Co(er) - 21 - pF VGS=0V,VDS=0...480V Effective output capacitance, time related2) Co(tr) - 88 - pF ID=constant,VGS=0V,VDS=0...480V Turn-on delay time td(on) - 10 - ns VDD=400V,VGS=13V,ID=3A, RG=6.8Ω ;seetable10 Rise time tr - 8 - ns VDD=400V,VGS=13V,ID=3A, RG=6.8Ω ;seetable10 Turn-off delay time td(off) - 58 - ns VDD=400V,VGS=13V,ID=3A, RG=6.8Ω ;seetable10 Fall time tf - 11 - ns VDD=400V,VGS=13V,ID=3A, RG=6.8Ω ;seetable10 Table7Gatechargecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs - 2.5 - nC VDD=480V,ID=3A,VGS=0to10V Gate to drain charge Qgd - 10.5 - nC VDD=480V,ID=3A,VGS=0to10V Gate charge total Qg - 20.5 - nC VDD=480V,ID=3A,VGS=0to10V Gate plateau voltage Vplateau - 5.4 - V VDD=480V,ID=3A,VGS=0to10V 1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to80%Vo(BR)DSS 2)Co(tr)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to80%Vo(BR)DSS

600VCoolMOSªCEPowerTransistor IPD60R650CE,IPA60R650CE Rev.2.2,2016-08-08Final Data Sheet Table8Reversediodecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Diode forward voltage VSD - 0.9 - V VGS=0V,IF=3A,Tj=25°C Reverse recovery time trr - 250 - ns VR=400V,IF=3A,diF/dt=100A/µs; see table 9 Reverse recovery charge Qrr - 2.1 - µC VR=400V,IF=3A,diF/dt=100A/µs; see table 9 Peak reverse recovery current Irrm - 16 - A VR=400V,IF=3A,diF/dt=100A/µs; see table 9

600VCoolMOSªCEPowerTransistor IPD60R650CE,IPA60R650CE Rev.2.2,2016-08-08Final Data Sheet 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation(NonFullPAK) TC[°C] Ptot[W] 100 125 150 Ptot=f(TC) Diagram2:Powerdissipation(FullPAK) TC[°C] Ptot[W] 100 125 150 Ptot=f(TC) Diagram3:Max.transientthermalimpedance(NonFullPAK) tp[s] ZthJC[K/W] 10-5 10-4 10-3 10-2 10-1 10-2 10-1 100 101 0.5 0.2 0.1 0.05 0.02 0.01 single pulse ZthJC=f(tP);parameter:D=tp/T Diagram4:Max.transientthermalimpedance(FullPAK) tp[s] ZthJC[K/W] 10-5 10-4 10-3 10-2 10-1 100 101 10-2 10-1 100 101 0.5 0.2 0.1 0.05 0.02 0.01 single pulse ZthJC=f(tP);parameter:D=tp/T

600VCoolMOSªCEPowerTransistor IPD60R650CE,IPA60R650CE Rev.2.2,2016-08-08Final Data Sheet Diagram5:Safeoperatingarea(NonFullPAK) VDS[V] ID[A] 100 101 102 103 10-3 10-2 10-1 100 101 102 1 µs 10 µs 100 µs 1 ms DC ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram6:Safeoperatingarea(FullPAK) VDS[V] ID[A] 100 101 102 103 10-4 10-3 10-2 10-1 100 101 102 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram7:Safeoperatingarea(NonFullPAK) VDS[V] ID[A] 100 101 102 103 10-3 10-2 10-1 100 101 102 1 µs 10 µs 100 µs 1 ms DC ID=f(VDS);TC=80°C;D=0;parameter:tp Diagram8:Safeoperatingarea(FullPAK) VDS[V] ID[A] 100 101 102 103 10-4 10-3 10-2 10-1 100 101 102 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=80°C;D=0;parameter:tp

600VCoolMOSªCEPowerTransistor IPD60R650CE,IPA60R650CE Rev.2.2,2016-08-08Final Data Sheet Diagram9:Typ.outputcharacteristics VDS[V] ID[A] 20 V 10 V 8 V 7 V 6 V 5.5 V 5 V 4.5 V ID=f(VDS);Tj=25°C;parameter:VGS Diagram10:Typ.outputcharacteristics VDS[V] ID[A] 20 V 10 V 8 V 7 V 6 V 5.5 V 5 V 4.5 V ID=f(VDS);Tj=125°C;parameter:VGS Diagram11:Typ.drain-sourceon-stateresistance ID[A] RDS(on)[Ω ] 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 10 V 5 V 5.5 V 6 V 6.5 V 7 V RDS(on)=f(ID);Tj=125°C;parameter:VGS Diagram12:Drain-sourceon-stateresistance Tj[°C] RDS(on)[Ω ] -50 -25 100 125 150 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 98% typ RDS(on)=f(Tj);ID=2.4A;VGS=10V

600VCoolMOSªCEPowerTransistor IPD60R650CE,IPA60R650CE Rev.2.2,2016-08-08Final Data Sheet Diagram13:Typ.transfercharacteristics VGS[V] ID[A] 150 °C 25 °C ID=f(VGS);VDS=20V;parameter:Tj Diagram14:Typ.gatecharge Qgate[nC] VGS[V] 120 V 480 V VGS=f(Qgate);ID=3.0Apulsed;parameter:VDD Diagram15:Forwardcharacteristicsofreversediode VSD[V] IF[A] 0.0 0.5 1.0 1.5 2.0 10-1 100 101 102 25 °C 125 °C IF=f(VSD);parameter:Tj Diagram16:Avalancheenergy Tj[°C] EAS[mJ] 100 125 150 100 125 150 EAS=f(Tj);ID=1.3A;VDD=50V

600VCoolMOSªCEPowerTransistor IPD60R650CE,IPA60R650CE Rev.2.2,2016-08-08Final Data Sheet Diagram17:Drain-sourcebreakdownvoltage Tj[°C] VBR(DSS)[V] -75 -50 -25 100 125 150 175 520 540 560 580 600 620 640 660 680 700 VBR(DSS)=f(Tj);ID=0.25mA Diagram18:Typ.capacitances VDS[V] C[pF] 100 200 300 400 500 100 101 102 103 104 Ciss Coss Crss C=f(VDS);VGS=0V;f=1MHz Diagram19:Typ.Cossstoredenergy VDS[V] Eoss[µJ] 100 200 300 400 500 0.0 0.5 1.0 1.5 2.0 2.5 Eoss=f(VDS)

600VCoolMOSªCEPowerTransistor IPD60R650CE,IPA60R650CE Rev.2.2,2016-08-08Final Data Sheet 5TestCircuits Table9Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform t V ,I Irrm IF VDS 10 %Irrm trr tF tS QF QS dIF / dt dIrr / dt VDS(peak) Qrr = QF +QS trr =tF +tS VDS IF VDS IF Rg1 Rg 2 Rg1 = Rg 2 Table10Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS VGS td(on) td(off)tr ton tf toff 10% 90% VDS VGS Table11Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform VDS V(BR)DS ID VDS VDSID

600VCoolMOSªCEPowerTransistor IPD60R650CE,IPA60R650CE Rev.2.2,2016-08-08Final Data Sheet 6PackageOutlines 2.0 ISSUE DATE EUROPEAN PROJECTION0 4mm2.0SCALE0 REVISION01-09-201505 DOCUMENT NO.Z8B00003328 *) mold flash not includedMILLIMETERS 4.57 (BSC)2.29 (BSC) D NHE1e1eED1 L31.180.510.90 5.02 9.40 6.404.705.97 b3ADIMb2cbc2 A15.00 0.00 0.0460.0200.035 0.1980.2520.1850.235 0.3701.701.00 5.605.846.226.73 0.220 0.039 0.2300.265 0.049 0.245 0.413 0.0005.50 INCHESMIN 0.217 L Figure1OutlinePG-TO252,dimensionsinmm/inches

600VCoolMOSªCEPowerTransistor IPD60R650CE,IPA60R650CE Rev.2.2,2016-08-08Final Data Sheet H b Dcb2 Ee1eLQ¡3L1ND1 ADIMA1 DOCUMENT NO.Z8B00181328 2.5 REVISION0129-04-2016ISSUE DATE EUROPEAN PROJECTION 1.130 0.177MIN0.0950.026 0.0160.6170.0470.092 0.394 0.5030.1180.1240.111 0.353 2.862.42 1.2015.670.40 0.65 10.00 2.833.153.0012.78 8.97329.75 0.90 0.631.5016.15 3.503.383.4513.75 10.659.83 0.100 (BSC)0.20031.171 0.0590.6360.025 0.035 0.419 0.1360.1330.1380.541 0.3870 INCHES0.193MAX0.110SCALE 5mm DIMENSIONS DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. Figure2OutlinePG-TO220FullPAK,dimensionsinmm/inches

600VCoolMOSªCEPowerTransistor IPD60R650CE,IPA60R650CE Rev.2.2,2016-08-08Final Data Sheet 7AppendixA Table12RelatedLinks

  • IFXCoolMOSTMCEWebpage:www.infineon.com
  • IFXCoolMOSTMCEapplicationnote:www.infineon.com
  • IFXCoolMOSTMCEsimulationmodel:www.infineon.com
  • IFXDesigntools:www.infineon.com

600VCoolMOSªCEPowerTransistor IPD60R650CE,IPA60R650CE Rev.2.2,2016-08-08Final Data Sheet RevisionHistory IPD60R650CE, IPA60R650CE Revision:2016-08-08,Rev.2.2 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2014-09-25 Release of final version 2.1 2016-03-31 Modified Id, Rthjc. Modified SOA and Zthjc curves 2.2 2016-08-08 Added Full PAK marking on page 1, revised Full PAK package drawing on page 14 and changed TO252 package solder reflow rating to MSL3 on page 4 TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2016InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.