IPA60R600P6_15 INFINEON | Alldatasheet

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MetalOxideSemiconductorFieldEffectTransistor CoolMOS™P6 600VCoolMOS™P6PowerTransistor IPx60R600P6 DataSheet Rev.2.2 Final PowerManagement&Multimarket

600VCoolMOS™P6PowerTransistor IPB60R600P6,IPP60R600P6,IPA60R600P6, IPD60R600P6 Rev.2.2,2015-07-10Final Data Sheet tab D²PAK tab TO-220 TO-220FP tab DPAK Drain Pin 2, Tab Gate Pin 1 Source Pin 3 1Description CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™P6seriescombinesthe experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. TheoffereddevicesprovideallbenefitsofafastswitchingSJMOSFET whilenotsacrificingeaseofuse.Extremelylowswitchingandconduction lossesmakeswitchingapplicationsevenmoreefficient,morecompact, lighterandcooler.

Features

  • IncreasedMOSFETdv/dtruggedness
  • ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
  • Veryhighcommutationruggedness
  • Easytouse/drive
  • Pb-freeplating,Halogenfreemoldcompound
  • QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22)

Applications

PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server,Telecom andUPS. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 650 V RDS(on),max 600 mΩ Qg.typ 12 nC ID,pulse 18 A Eoss@400V 1.8 µJ Body diode di/dt 500 A/µs Type/OrderingCode Package Marking RelatedLinks IPB60R600P6 PG-TO 263 IPP60R600P6 PG-TO 220 IPA60R600P6 PG-TO 220 FullPAK IPD60R600P6 PG-TO 252 6R600P6 see Appendix A

600VCoolMOS™P6PowerTransistor IPB60R600P6,IPP60R600P6,IPA60R600P6, IPD60R600P6 Rev.2.2,2015-07-10Final Data Sheet TableofContents

600VCoolMOS™P6PowerTransistor IPB60R600P6,IPP60R600P6,IPA60R600P6, IPD60R600P6 Rev.2.2,2015-07-10Final Data Sheet 2Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Continuous drain current1) ID 7.3

4.6 A TC=25°C

TC=100°C Pulsed drain current2) ID,pulse - - 18 A TC=25°C Avalanche energy, single pulse EAS - - 133 mJ ID=1.3A; VDD=50V; see table 12 Avalanche energy, repetitive EAR - - 0.20 mJ ID=1.3A; VDD=50V; see table 12 Avalanche current, repetitive IAR - - 1.3 A - MOSFET dv/dt ruggedness dv/dt - - 100 V/ns VDS=0...400V Gate source voltage (static) VGS -20 - 20 V static; Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz) Power dissipation (Non FullPAK) TO-220, TO-252, TO-263 Ptot - - 63 W TC=25°C Power dissipation (FullPAK) TO-220FP Ptot - - 28 W TC=25°C Storage temperature Tstg -55 - 150 °C - Operating junction temperature Tj -55 - 150 °C - Mounting torque (Non FullPAK) TO-220 - - - 60 Ncm M3 and M3.5 screws Mounting torque (FullPAK) TO-220FP - - - 50 Ncm M2.5 screws Continuous diode forward current IS - - 6.3 A TC=25°C Diode pulse current2) IS,pulse - - 18 A TC=25°C Reverse diode dv/dt3) dv/dt - - 15 V/ns VDS=0...400V,ISD<=IS,Tj=25°C see table 10 Maximum diode commutation speed dif/dt - - 500 A/µs VDS=0...400V,ISD<=IS,Tj=25°C see table 10 Insulation withstand voltage for TO-220FP VISO - - 2500 V Vrms,TC=25°C,t=1min 1) Limited by Tj max. Maximum duty cycle D=0.75 2) Pulse width tp limited by Tj,max 3)IdenticallowsideandhighsideswitchwithidenticalRG

600VCoolMOS™P6PowerTransistor IPB60R600P6,IPP60R600P6,IPA60R600P6, IPD60R600P6 Rev.2.2,2015-07-10Final Data Sheet 3Thermalcharacteristics Table3Thermalcharacteristics(NonFullPAK)TO-220 Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - case RthJC - - 2 °C/W - Thermal resistance, junction - ambient RthJA - - 62 °C/W leaded Soldering temperature, wavesoldering only allowed at leads Tsold - - 260 °C 1.6mm (0.063 in.) from case for 10s Table4Thermalcharacteristics(FullPAK)TO-220FP Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - case RthJC - - 4.5 °C/W - Thermal resistance, junction - ambient RthJA - - 80 °C/W leaded Soldering temperature, wavesoldering only allowed at leads Tsold - - 260 °C 1.6mm (0.063 in.) from case for 10s Table5ThermalcharacteristicsTO-252,TO-263 Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - case RthJC - - 2 °C/W - Thermal resistance, junction - ambient RthJA - - 62 °C/W device on PCB, minimal footprint Thermal resistance, junction - ambient for SMD version RthJA - 35 45 °C/W Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70µm thickness) copper area for drain connection and cooling. PCB is vertical without air stream cooling. Soldering temperature, wave & reflow soldering allowed Tsold - - 260 °C reflow MSL1

600VCoolMOS™P6PowerTransistor IPB60R600P6,IPP60R600P6,IPA60R600P6, IPD60R600P6 Rev.2.2,2015-07-10Final Data Sheet 4Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table6Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 600 - - V VGS=0V,ID=1mA Gate threshold voltage V(GS)th 3.5 4.0 4.5 V VDS=VGS,ID=0.2mA Zero gate voltage drain current IDSS - µA VDS=600,VGS=0V,Tj=25°C VDS=600,VGS=0V,Tj=150°C Gate-source leakage current IGSS - - 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) 0.540 1.404 0.600 - Ω VGS=10V,ID=2.4A,Tj=25°C VGS=10V,ID=2.4A,Tj=150°C Gate resistance RG - 11 - Ω f=1MHz,opendrain Table7Dynamiccharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance Ciss - 557 - pF VGS=0V,VDS=100V,f=1MHz Output capacitance Coss - 28 - pF VGS=0V,VDS=100V,f=1MHz Effective output capacitance, energy related1) Co(er) - 23 - pF VGS=0V,VDS=0...400V Effective output capacitance, time related2) Co(tr) - 88 - pF ID=constant,VGS=0V,VDS=0...400V Turn-on delay time td(on) - 11 - ns VDD=400V,VGS=13V,ID=3A, RG=6.8Ω ;seetable11 Rise time tr - 7 - ns VDD=400V,VGS=13V,ID=3A, RG=6.8Ω ;seetable11 Turn-off delay time td(off) - 33 - ns VDD=400V,VGS=13V,ID=3A, RG=6.8Ω ;seetable11 Fall time tf - 14 - ns VDD=400V,VGS=13V,ID=3A, RG=6.8Ω ;seetable11 Table8Gatechargecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs - 3 - nC VDD=400V,ID=3A,VGS=0to10V Gate to drain charge Qgd - 5 - nC VDD=400V,ID=3A,VGS=0to10V Gate charge total Qg - 12 - nC VDD=400V,ID=3A,VGS=0to10V Gate plateau voltage Vplateau - 6.1 - V VDD=400V,ID=3A,VGS=0to10V 1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V 2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V

600VCoolMOS™P6PowerTransistor IPB60R600P6,IPP60R600P6,IPA60R600P6, IPD60R600P6 Rev.2.2,2015-07-10Final Data Sheet Table9Reversediodecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Diode forward voltage VSD - 0.9 - V VGS=0V,IF=3A,Tj=25°C Reverse recovery time trr - 196 - ns VR=400V,IF=3A,diF/dt=100A/µs; see table 10 Reverse recovery charge Qrr - 1.7 - µC VR=400V,IF=3A,diF/dt=100A/µs; see table 10 Peak reverse recovery current Irrm - 17 - A VR=400V,IF=3A,diF/dt=100A/µs; see table 10

600VCoolMOS™P6PowerTransistor IPB60R600P6,IPP60R600P6,IPA60R600P6, IPD60R600P6 Rev.2.2,2015-07-10Final Data Sheet 5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation(NonFullPAK) TC[°C] Ptot[W] 100 125 150 Ptot=f(TC) Diagram2:Powerdissipation(FullPAK) TC[°C] Ptot[W] 100 125 150 Ptot=f(TC) Diagram3:Max.transientthermalimpedance(NonFullPAK) tp[s] ZthJC[K/W] 10-5 10-4 10-3 10-2 10-1 10-2 10-1 100 101 0.5 0.2 0.1 0.05 0.02 0.01 single pulse ZthJC=f(tP);parameter:D=tp/T Diagram4:Max.transientthermalimpedance(NonFullPAK) tp[s] ZthJC[K/W] 10-5 10-4 10-3 10-2 10-1 100 101 10-2 10-1 100 101 0.5 0.2 0.1 0.05 0.02 0.01 single pulse ZthJC=f(tP);parameter:D=tp/T

600VCoolMOS™P6PowerTransistor IPB60R600P6,IPP60R600P6,IPA60R600P6, IPD60R600P6 Rev.2.2,2015-07-10Final Data Sheet Diagram5:Safeoperatingarea(NonFullPAK) VDS[V] ID[A] 100 101 102 103 10-3 10-2 10-1 100 101 102 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram6:Safeoperatingarea(FullPAK) VDS[V] ID[A] 100 101 102 103 10-4 10-3 10-2 10-1 100 101 102 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram7:Safeoperatingarea(NonFullPAK) VDS[V] ID[A] 100 101 102 103 10-3 10-2 10-1 100 101 102 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=80°C;D=0;parameter:tp Diagram8:Safeoperatingarea(FullPAK) VDS[V] ID[A] 100 101 102 103 10-4 10-3 10-2 10-1 100 101 102 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=80°C;D=0;parameter:tp

600VCoolMOS™P6PowerTransistor IPB60R600P6,IPP60R600P6,IPA60R600P6, IPD60R600P6 Rev.2.2,2015-07-10Final Data Sheet Diagram9:Typ.outputcharacteristics VDS[V] ID[A] 20 V 10 V 8 V 7 V 6 V 5.5 V 5 V 4.5 V ID=f(VDS);Tj=25°C;parameter:VGS Diagram10:Typ.outputcharacteristics VDS[V] ID[A] 20 V 10 V 8 V 7 V 6 V 5.5 V 5 V 4.5 V ID=f(VDS);Tj=125°C;parameter:VGS Diagram11:Typ.drain-sourceon-stateresistance ID[A] RDS(on)[Ω ] 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 20 V 5.5 V 6 V 6.5 V 7 V 10 V RDS(on)=f(ID);Tj=125°C;parameter:VGS Diagram12:Drain-sourceon-stateresistance Tj[°C] RDS(on)[Ω ] -50 -25 100 125 150 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 98% typ RDS(on)=f(Tj);ID=2.4A;VGS=10V

600VCoolMOS™P6PowerTransistor IPB60R600P6,IPP60R600P6,IPA60R600P6, IPD60R600P6 Rev.2.2,2015-07-10Final Data Sheet Diagram13:Typ.transfercharacteristics VGS[V] ID[A] 150 °C 25 °C ID=f(VGS);VDS=20V;parameter:Tj Diagram14:Typ.gatecharge Qgate[nC] VGS[V] 120 V 480 V VGS=f(Qgate);ID=3.0Apulsed;parameter:VDD Diagram15:Forwardcharacteristicsofreversediode VSD[V] IF[A] 0.0 0.5 1.0 1.5 2.0 10-1 100 101 102 125 °C 25 °C IF=f(VSD);parameter:Tj Diagram16:Avalancheenergy Tj[°C] EAS[mJ] 100 125 150 100 120 140 EAS=f(Tj);ID=1.3A;VDD=50V

600VCoolMOS™P6PowerTransistor IPB60R600P6,IPP60R600P6,IPA60R600P6, IPD60R600P6 Rev.2.2,2015-07-10Final Data Sheet Diagram17:Drain-sourcebreakdownvoltage Tj[°C] VBR(DSS)[V] -75 -50 -25 100 125 150 175 520 540 560 580 600 620 640 660 680 700 VBR(DSS)=f(Tj);ID=1mA Diagram18:Typ.capacitances VDS[V] C[pF] 100 200 300 400 500 100 101 102 103 104 Ciss Coss Crss C=f(VDS);VGS=0V;f=1MHz Diagram19:Typ.Cossstoredenergy VDS[V] Eoss[µJ] 100 200 300 400 500 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Eoss=f(VDS)

600VCoolMOS™P6PowerTransistor IPB60R600P6,IPP60R600P6,IPA60R600P6, IPD60R600P6 Rev.2.2,2015-07-10Final Data Sheet 6TestCircuits Table10Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform t V ,I Irrm IF VDS 10 %Irrm trr tF tS QF QS dIF / dt dIrr / dt VDS(peak) Qrr = QF +QS trr =tF +tS VDS IF VDS IF Rg1 Rg 2 Rg1 = Rg 2 Table11Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS VGS td(on) td(off)tr ton tf toff 10% 90% VDS VGS Table12Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform VDS V(BR)DS ID VDS VDSID

600VCoolMOS™P6PowerTransistor IPB60R600P6,IPP60R600P6,IPA60R600P6, IPD60R600P6 Rev.2.2,2015-07-10Final Data Sheet 7PackageOutlines Figure1OutlinePG-TO263,dimensionsinmm/inches

600VCoolMOS™P6PowerTransistor IPB60R600P6,IPP60R600P6,IPA60R600P6, IPD60R600P6 Rev.2.2,2015-07-10Final Data Sheet Figure2OutlinePG-TO220,dimensionsinmm/inches

600VCoolMOS™P6PowerTransistor IPB60R600P6,IPP60R600P6,IPA60R600P6, IPD60R600P6 Rev.2.2,2015-07-10Final Data Sheet H b Dcb2 Ee1eLQ¡3L1ND1 ADIMA1 DOCUMENT NO.Z8B00003319 2.5 REVISION0405-05-2014ISSUE DATE EUROPEAN PROJECTION 1.130 0.177MIN0.0950.026 0.0160.6170.0370.092 0.394 0.5030.1160.1240.111 0.353 2.862.42 0.9515.670.40 0.65 10.00 2.833.152.9512.78 8.97329.75 0.90 0.631.5116.15 3.503.383.4513.75 10.659.83 0.100 (BSC)0.20031.171 0.0590.6360.025 0.035 0.419 0.1360.1330.1380.541 0.3870 INCHES0.193MAX0.112SCALE 5mm Figure3OutlinePG-TO220FullPAK,dimensionsinmm/inches

600VCoolMOS™P6PowerTransistor IPB60R600P6,IPP60R600P6,IPA60R600P6, IPD60R600P6 Rev.2.2,2015-07-10Final Data Sheet Figure4OutlinePG-TO252,dimensionsinmm/inches

600VCoolMOS™P6PowerTransistor IPB60R600P6,IPP60R600P6,IPA60R600P6, IPD60R600P6 Rev.2.2,2015-07-10Final Data Sheet 8AppendixA Table13RelatedLinks

  • IFXCoolMOSTMP6Webpage:www.infineon.com
  • IFXCoolMOSTMP6applicationnote:www.infineon.com
  • IFXCoolMOSTMP6simulationmodel:www.infineon.com
  • IFXDesigntools:www.infineon.com

600VCoolMOS™P6PowerTransistor IPB60R600P6,IPP60R600P6,IPA60R600P6, IPD60R600P6 Rev.2.2,2015-07-10Final Data Sheet RevisionHistory IPB60R600P6, IPP60R600P6, IPA60R600P6, IPD60R600P6 Revision:2015-07-10,Rev.2.2 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2013-12-05 Release of final version 2.1 2013-12-05 Release of multi-package datasheet 2.2 2015-07-10 PG-TO 263 package added WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2015InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.