DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 17
Technical content
MetalOxideSemiconductorFieldEffectTransistor CoolMOS™E6600V 600VCoolMOS™E6PowerTransistor IPx60R600E6 DataSheet Rev.2.2 Final PowerManagement&Multimarket
600V CoolMOS" E6 Power Transistor IPD60R600E6, IPP60R600E6 IPA60R600E6 FinalData Sheet 2 Rev. 2.0, 2010-04-12
1 Description
CoolMOS " is a revolutionary technology for high voltage power MOSFET s, designed according to the superjunction (SJ) prin ciple and pioneered by Infineon T echnologies. CoolMOS " E6 series combines the experience of the leading SJ MOSFET supplier wi th high class innovation. The offered devices provide all bene fits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switchin g applications even more efficient, more compact, lighter, a nd cooler.
Features
- Extremely low losses due to very low FOM R dson*Qg and Eoss
- Very high commutation ruggedness
- Easy to use/drive
- JEDEC 1) qualified, Pb-free plating, halogen free (excluding TO-252)
Applications
PFC stages, hard switching PWM stages and resonant switching PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom and UPS. Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. 1) J-STD20 and JESD22 Table 1 Key Performance Parameters Parameter Value Unit VDS @ Tj,max 650 V RDS(on),max 0.6 ! Qg,typ 20.5 nC ID,pulse 19 A Eoss @ 400V 1.9 µJ Body diode d i/dt 500 A/µs Type / Ordering Code Package Marking Related Links IPD60R600E6 PG-TO252 IFX CoolMOS Webpage IPP60R600E6 PG-TO220 6R600E6 IFX Design tools IPA60R600E6 PG-TO220 FullPAK Rev. 2.2, 2014-12-10
600V CoolMOS" E6 Power Transistor IPx60R600E6 Table of Contents FinalData Sheet 3 Rev. 2.0, 2010-04-12 Table of Contents Rev. 2.2, 2014-12-10
600V CoolMOS" E6 Power Transistor IPx60R600E6 Maximum ratings FinalData Sheet 4 Rev. 2.0, 2010-04-12
2 Maximum ratings
at Tj = 25 °C, unless otherwise specified. Table 2 Maximum ratings Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Continuous drain current 1) 1) Limited by Tj,max. Maximum duty cycle D=0.75 ID - - 7.3 A TC= 25 °C
4.6 TC= 100°C
Pulsed drain current 2) 2) Pulse width tp limited by Tj,max ID,pulse - - 19 A TC=25 °C Avalanche energy, single pulse EAS - - 133 mJ ID=1.3 A,VDD=50 V (see table 21) Avalanche energy, repetitive EAR - - 0.2 ID=1.3 A,VDD=50 V Avalanche current, repetitive IAR - - 1.3 A MOSFET dv/dt ruggedness dv/dt - - 50 V/ns VDS=0...480 V Gate source voltage VGS -20 - 20 V static -30 30 AC (f>1 Hz) Power dissipation for TO-220, TO-252 Ptot - - 63 W TC=25 °C Power dissipation for TO-220 FullPAK Ptot - - 28 W TC=25 °C Operating and storage temperature Tj,Tstg -55 - 150 °C Mounting torque TO-220 - - 60 Ncm M3 and M3.5 screws Mounting torque TO-220 FullPAK 50 M2.5 screws Continuous diode forward current IS - - 6.3 A TC=25 °C Diode pulse current 2) IS,pulse - - 19 A TC=25 °C Reverse diode dv/dt 3) 3) Identical low side and high side switch with identical RG dv/dt - - 15 V/ns VDS=0...400 V,ISD " ID, Tj=25 °C Maximum diode commutation speed3) dif/dt 500 A/µs (see table 22) Rev. 2.2, 2014-12-10
600V CoolMOS" E6 Power Transistor IPx60R600E6 Thermal characteristics FinalData Sheet 5 Rev. 2.0, 2010-04-12
3 Thermal characteristics
Table 3 Thermal characteristics TO-220 (IPP60R600E6) Parameter Symbol Values Unit Note / Test ConditionMin. Typ. Max. Thermal resistance, junction - case RthJC - - 2.0 °C/W Thermal resistance, junction - ambient RthJA - - 62 leaded Soldering temperature, wavesoldering only allowed at leads Tsold - - 260 °C 1.6 mm (0.063 in.) from case for 10 s Table 4 Thermal characteristics TO-220FullPAK (IPA60R600 E6) Parameter Symbol Values Unit Note / Test ConditionMin. Typ. Max. Thermal resistance, junction - case RthJC - - 4.5 °C/W Thermal resistance, junction - ambient RthJA - - 80 leaded Soldering temperature, wavesoldering only allowed at leads Tsold - - 260 °C 1.6 mm (0.063 in.) from case for 10 s Table 5 Thermal characteristics TO-252 (IPD60R600E6) Parameter Symbol Values Unit Note / Test ConditionMin. Typ. Max. Thermal resistance, junction - case RthJC - - 2.0 °C/W Thermal resistance, junction - ambient RthJA - - 62 SMD version, device on PCB, minimal footprint
35 SMD version, device
on PCB, 6cm2 cooling area1) 1) Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm 2 copper area (thickness 70µm) for drain connection. PCB is vertical without air stream cooling. Soldering temperature, wave- & reflow soldering allowed Tsold - - 260 °C reflow MSL1 Rev. 2.2, 2014-12-10
600V CoolMOS" E6 Power Transistor IPx60R600E6
Electrical characteristics
FinalData Sheet 6 Rev. 2.0, 2010-04-12
4 Electrical characteristics
Electrical characteristics, at Tj=25 °C, unless otherwise specified. Table 6 Static characteristics Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Drain-source breakdown voltage V(BR)DSS 600 - - V VGS=0 V, ID=0.25 mA Gate threshold voltage VGS(th) 2.5 3 3.5 VDS=VGS, ID=0.20mA Zero gate voltage drain current IDSS - - 1 µA VDS=600 V, VGS=0 V, Tj=25 °C - 10 - VDS=600 V, VGS=0 V, Tj=150 °C Gate-source leakage current IGSS - - 100 nA VGS=20 V, VDS=0 V Drain-source on-state resistance RDS(on) - 0.54 0.60 ! VGS=10 V, ID=2.4 A, Tj=25 °C - 1.40 - VGS=10 V, ID=2.4A, Tj=150 °C Gate resistance RG - 10 - ! f=1 MHz, open drain Table 7 Dynamic characteristics Parameter Symbol Values Unit Note / Test ConditionMin. Typ. Max. Input capacitance Ciss - 440 - pF VGS=0 V, VDS=100 V, f=1 MHzOutput capacitance Coss - 30 - Effective output capacitance, energy related 1) 1) Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V (BR)DSS Co(er) - 21 - VGS=0 V, VDS=0...480 V Effective output capacitance, time related2) 2) Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V (BR)DSS Co(tr) - 88 - ID=constant, VGS=0 V VDS=0...480V Turn-on delay time td(on) - 10 - ns VDD=400 V, VGS=13 V, ID=3 A, RG= 6.8 ! (see table 20) Rise time tr - 8 - Turn-off delay time td(off) - 58 - Fall time tf - 11 - Rev. 2.2, 2014-12-10
600V CoolMOS" E6 Power Transistor IPx60R600E6 FinalData Sheet 7 Rev. 2.0, 2010-04-12 Table 8 Gate charge characteristics Parameter Symbol Values Unit Note / Test ConditionMin. Typ. Max. Gate to source charge Qgs - 2.5 - nC VDD=480 V, ID=3.0A, VGS=0 to 10 VGate to drain charge Qgd - 10.5 - Gate charge total Qg - 20.5 - Gate plateau voltage Vplateau - 5.4 - V Table 9 Reverse diode characteristics Parameter Symbol Values Unit Note / Test ConditionMin. Typ. Max. Diode forward voltage VSD - 0.9 - V VGS=0 V, IF=3.0A, Tj=25 °C Reverse recovery time trr - 250 - ns VR=400 V, IF=3.0A, diF/dt=100 A/µs (see table 22) Reverse recovery charge Qrr - 2.1 - µC Peak reverse recovery current Irrm - 16 - A Rev. 2.2, 2014-12-10
600V CoolMOS" E6 Power Transistor IPx60R600E6 Electrical characteristics diagrams FinalData Sheet 8 Rev. 2.0, 2010-04-12
5 Electrical characteristics diagrams
TO-220, TO-252 Power dissipation TO-220 FullPAK Ptot = f(TC) Ptot = f(TC) Table 11 Max. transient thermal impedance TO-220, TO-252 Max. transient thermal impedance TO-220 FullPAK Z(thJC)=f(tp); parameter: D=t p/T Z(thJC)=f(tp); parameter: D=t p/T Rev. 2.2, 2014-12-10
600V CoolMOS" E6 Power Transistor IPx60R600E6 Electrical characteristics diagrams FinalData Sheet 9 Rev. 2.0, 2010-04-12 Table 12 Safe operating area TC=25 °C TO-220, TO-252 Safe operating area TC=25 °C TO-220 FullPAK ID=f(VDS); TC=25 °C; D=0; parameter tp ID=f(VDS); TC=25 °C; D=0; parameter tp Table 13 Safe operating area TC=80 °C TO-220, TO-252 Safe operating area TC=80 °C TO-220 FullPAK ID=f(VDS); TC=80 °C; D=0; parameter tp ID=f(VDS); TC=80 °C; D=0; parameter tp Rev. 2.2, 2014-12-10
600V CoolMOS" E6 Power Transistor IPx60R600E6 Electrical characteristics diagrams FinalData Sheet 10 Rev. 2.0, 2010-04-12 Table 14 Typ. output characteristics TC=25 °C Typ. output characteristics Tj=125 °C ID=f(VDS); Tj=25 °C; parameter: VGS ID=f(VDS); Tj=125 °C; parameter: VGS Table 15 Typ. drain-source on-state resistance Drain-source on-st ate resistance RDS(on)=f(ID); Tj=125 °C; parameter: VGS RDS(on)=f(Tj); ID=2.4 A; VGS=10 V Rev. 2.2, 2014-12-10
600V CoolMOS" E6 Power Transistor IPx60R600E6 Electrical characteristics diagrams FinalData Sheet 11 Rev. 2.0, 2010-04-12 Table 16 Typ. transfer characteristics Typ. gate charge ID=f(VGS); VDS=20V VGS=f(Qgate), ID=3.0A pulsed Table 17 Avalanche energy Drain-source breakdown voltage EAS=f(Tj); ID=1.3 A; VDD=50 V VBR(DSS)=f(Tj); ID=0.25 mA Rev. 2.2, 2014-12-10
600V CoolMOS" E6 Power Transistor IPx60R600E6 Electrical characteristics diagrams FinalData Sheet 12 Rev. 2.0, 2010-04-12 Table 18 Typ. capacitances Typ. Coss stored energy C=f(VDS); VGS=0 V; f=1 MHz EOSS=f(VDS) Table 19 Forward characteristics of reverse diode IF=f(VSD); parameter: Tj Rev. 2.2, 2014-12-10
600V CoolMOS" E6 Power Transistor IPx60R600E6 Test circuits FinalData Sheet 13 Rev. 2.0, 2010-04-12
6 Test circuits
Table 20 Switching times test circuit and waveform for induc tive load Switching times test circuit for inductive load Switching t ime waveform Table 21 Unclamped inductive load test circuit and waveform Unclamped inductive load test circuit Unclamped inductive waveform Table 22 Test circuit and waveform for diode characteristic s Test circuit for diode characteristics Diode recovery wave form VD S VGS VD S VGS td( on ) td ( off )tr ton tf toff 10% 90% VDSID VDS VD V(BR)DS ID VDS VDS ID RG1 RG2 RG1 = RG2 /# $ #/ $00 %$! '$! --, --, $ --, --," .$ $ ) #/#/ 00 $ 00$ $ . $)( " (00! ! . )" ! Rev. 2.2, 2014-12-10
600V CoolMOS" E6 Power Transistor IPx60R600E6 Package outlines FinalData Sheet 14 Rev. 2.0, 2010-04-12
7 Package outlines
Figure 1 Outlines TO-220, dimensions in mm/inches Rev. 2.2, 2014-12-10
6**M =^^[FGKm E6 H^fTa LaP]bXbc^a ),/ )1(7/*06 01" Z8B00003319 2.5 4*8,5,10 05-05-2014 ,557* )'6* 1.130 0.177 MIN 0.095 0.026 0.016 0.617 0.037 0.092 0.394 0.503 0.116 0.124 0.111 0.353 2.862.42 2.54 (BSC) 5.08 28.70 0.95 15.67 0.40 0.65 10.00 2.83 3.15 2.95 12.78 8.97 29.75 0.90 0.63 1.51 16.15 3.50 3.38 3.45 13.75 10.65 9.83 /,..,/*6*45 MIN 4.50 2.34 MAX 4.90 2.85 0.113 0.100 (BSC) 0.200 1.171 0.059 0.636 0.025 0.035 0.419 0.136 0.133 0.138 0.541 0.387 ,0(+*5 0.193 MAX 0.112 5('.* 5mm 9& 0.0260.65 1.51 0.059 9% 0.0260.65 1.38 0.054 ;XVc\`T ! Dcb[X]T E<%HD **( ;c[[E5@$ SX\\T]aX^]a X] \\\\'X]RWTa /45<487 @DC=;?7B Final Data Sheet Rev. 2.5, 2014-12-09Rev. 2.2, 2014-12-10
600V CoolMOS" E6 Power Transistor IPx60R600E6 Package outlines FinalData Sheet 16 Rev. 2.0, 2010-04-12 Figure 3 Outlines TO-252, dimensions in mm/inches Rev. 2.2, 2014-12-10
600VCoolMOS™E6PowerTransistor IPx60R600E6 Rev.2.2,2015-02-11 RevisionHistory IPx60R600E6 Revision:2015-02-11,Rev.2.2 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2011-06-08 Release final data sheet 2.1 2011-09-14 - 2.2 2015-02-11 PG-TO220 FullPAK package outline update (creation:2014-12-10) WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2015InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.