IPA60R385CP_10 INFINEON | Alldatasheet
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Maximum ratings, 6IT [ Y JCA: HHDI=: GL>H: HE: 8>;>: 9 Parameter Symbol Conditions Unit DCI>CJDJH9>D9: ;DGL6G98JGG: CI+# I L 9 !>D9: EJAH: 8JGG: CI,# I L%af]dV +0 / : K: GH: 9>D9: 9v (Ut .# Uv (Ut *. O(_d Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics 1=: GB 6AG: H>HI6C8: ?JC8I>DC 86H: R eYC< & & - D(P R eYC9 ]VRUVU & & 1) 0DA9: G>C<I: B E: G6IJG: L6K: HDA9: G>C<DCAN6AADL: 96IA: 69H T d\`]U B B ;GDB 86H: ;DG H & & +/) u< Electrical characteristics, 6IT [ Y JCA: HHDI=: GL>H: HE: 8>;>: 9 Static characteristics !G6>C HDJG8: 7G: 6@9DLCKDAI6<: V ";K#=LL V @L
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Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics &CEJI86E68>I6C8: C Zdd & 02) & a? , JIEJI86E68>I6C8: C \dd & ,1 & " ;;: 8I>K: DJIEJI86E68>I6C8: : C: G<N " ;;: 8I>K: DJIEJI86E68>I6C8: I>B : 1JGC 1JGC D;;9: A6NI>B : t U"\WW# & -) & # 6AAI>B : t W & . & $ 6I: =6G<: =6G68I: G>HI>8H $ 6I: IDHDJG8: 8=6G<: Q Xd & - & _< $ 6I: ID9G6>C8=6G<: Q XU & / & $ 6I: 8=6G<: IDI6A Q X & *0 ++ $ 6I: EA6I: 6JKDAI6<: V a]ReVRf & .') & O Reverse Diode !>D9: ;DGL6G9KDAI6<: V L= V @L 3 I ? T [ Y & )'2 *'+ O / : K: GH: G: 8DK: GNI>B : t cc & +/) & _d / : K: GH: G: 8DK: GN8=6G<: Q cc & ,'* & w< -: 6@G: K: GH: G: 8DK: GN8JGG: CI I cc^ & +- & 9 *#' 01! 6C9' " 0! +#)>B >I: 9DCAN7NB 6M>B JB I: B E: G6IJG: ,#-JAH: L>9I=t aA>B >I: 97NT [%^Ri -#/ : E: I>I>K: 6K6A6C8=: 86JH: H699>I>DC6AEDL: GADHH: HI=6I86C7: 86A8JA6I: 96HP 9O6E 9K$f. .#&L="B= 9> 9I" [ H 3 =<]Z_\\ 3 3 aVR\\5O";K#=LL 1[5M[^Ri >9: CI>86AADLH>9: 6C9=><=H>9: HL>I8= /# C \"Vc#>H6;>M: 986E68>I6C8: I=6I<>K: HI=: H6B : HIDG: 9: C: G<N6HC \ddL=>A: V =L>HG>H>C<;GDB ID V =LL' ID V =LL' V K 3 I ?6I L Ui ?(Ut [ H Values V @L f * % O V == V @L R @ V == V @L ID V @L / : K E6<:
1 Power dissipation 2 Safe operating area
P e\`e6W"T <# I =6W"V =LT < Y D 6) E6G6B : I: Gt a 3 Max. transient thermal impedance 4 Typ. output characteristics Z eYC<6W"t I# I =6W"V =LT [ Y E6G6B : I: GD=t a(T E6G6B : I: GV @L 0 40 80 120 160 T C [°C] P tot [W] [ H [ H [ H B H B H 103102101100 102 101 100 10-1 V DS [V] I D [A] H>C<A: EJAH: )')* )')+ )'). )'* )'+ )'. 10110010-110-210-310-410-5 101 100 10-1 10-2 t p [s] Z thJC [K/W] 0 5 10 15 20 V DS [V] I D [A] A>B >I: 97NDC HI6I: cVdZdeR_TV / : K E6<:
5 Typ. output characteristics 6 Typ. drain-source on-state resistance I =6W"V =LT [ Y E6G6B : I: GV @L E6G6B : I: GV @L 7 Drain-source on-state resistance 8 Typ. transfer characteristics V @L
3 I =6W"V @LPV =Ll7+lI =lR =L"\`_#^Ri
E6G6B : I: GT [ eja 0.2 0.4 0.6 0.8 1.2 -60 -20 20 60 100 140 180 T j [°C] R DS(on) [ ] Y Y 0 2 4 6 8 10 V GS [V] I D [A] 0 5 10 15 20 V DS [V] I D [A] 3 3 0.4 0.8 1.2 1.6 2.4 0 5 10 15 I D [A] R DS(on) [ ] / : K E6<:
9 Typ. gate charge 10 Forward characteristics of reverse diode V @L6W"Q XReVI = EJAH: 9 I ?6W"V L=# E6G6B : I: GV == E6G6B : I: GT [
11 Avalanche energy 12 Drain-source breakdown voltage
E 9L6W"T [I = V ==
3 V ;K"=LL#6W"T [I =
B Y Y Y Y 102 101 100 10-1 0 0.5 1 1.5 2 V SD [V] I F [A] 0 5 10 15 20 Q gate [nC] V GS [V] 540 580 620 660 700 -60 -20 20 60 100 140 180 T j [°C] V( BR)DSS [V] 100 150 200 250 20 60 100 140 180 T j [°C] E AS [mJ] / : K E6<:
13 Typ. capacitances 14 Typ. Coss stored energy C 6W"V =LV @L 3 f * % O E \dd= W(V =L) 0 100 200 300 400 500 600 V DS [V] E oss [µJ] <Zdd <\dd <cdd 104 103 102 101 100 V DS [V] C [pF] / : K E6<:
Definition of diode switching characteristics / : K E6<:
PG-TO220-3-31/TO220-3-11: Outline/ Fully isolated package (2500VAC; 1 minute) !>B : CH>DCH>CB B >C8=: H / : K E6<:
81726 Munich, Germany
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