IPA60R360CFD7 INFINEON | Alldatasheet

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Technical content

Features

  • Ultra-fastbodydiode
  • Lowgatecharge
  • Best-in-classreverserecoverycharge(Qrr)
  • ImprovedMOSFETreversediodedv/dtanddiF/dtruggedness
  • LowestFOMRDS(on)*QgandRDS(on)*Eoss
  • Best-in-classRDS(on)inSMDandTHDpackages Benefits
  • Excellenthardcommutationruggedness
  • Highestreliabilityforresonanttopologies
  • Highestefficiencywithoutstandingease-of-use/performancetradeoff
  • Enablingincreasedpowerdensitysolutions Potentialapplications SuiteableforSoftSwitchingtopologies Optimizedforphase-shiftfull-bridge(ZVS),LLCApplications–Server, Telecom,EVCharging Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 650 V RDS(on),max 360 mΩ Qg,typ 14 nC ID,pulse 24 A Eoss @ 400V 1.6 µJ Body diode diF/dt 1300 A/µs Type/OrderingCode Package Marking RelatedLinks IPA60R360CFD7 PG-TO 220 FullPAK 60R360F7 see Appendix A

600VCoolMOSªCFD7PowerDevice IPA60R360CFD7 Rev.2.1,2020-01-31Final Data Sheet TableofContents

600VCoolMOSªCFD7PowerDevice IPA60R360CFD7 Rev.2.1,2020-01-31Final Data Sheet 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Continuous drain current1) ID

3 A TC=25°C

TC=100°C Pulsed drain current2) ID,pulse - - 24 A TC=25°C Avalanche energy, single pulse EAS - - 29 mJ ID=2.0A; VDD=50V; see table 10 Avalanche energy, repetitive EAR - - 0.14 mJ ID=2.0A; VDD=50V; see table 10 Avalanche current, single pulse IAS - - 2.0 A - MOSFET dv/dt ruggedness dv/dt - - 120 V/ns VDS=0...400V Gate source voltage (static) VGS -20 - 20 V static; Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz) Power dissipation Ptot - - 23 W TC=25°C Storage temperature Tstg -55 - 150 °C - Operating junction temperature Tj -55 - 150 °C - Mounting torque - - - 50 Ncm M2.5 and M3 screws Continuous diode forward current IS - - 5 A TC=25°C Diode pulse current2) IS,pulse - - 24 A TC=25°C Reverse diode dv/dt3) dv/dt - - 70 V/ns VDS=0...400V,ISD<=5A,Tj=25°C see table 8 Maximum diode commutation speed diF/dt - - 1300 A/µs VDS=0...400V,ISD<=5A,Tj=25°C see table 8 Insulation withstand voltage VISO - - 2500 V Vrms,TC=25°C,t=1min 1) Limited by Tj,max. 2) Pulse width tp limited by Tj,max 3) Identical low side and high side switch with identical RG

600VCoolMOSªCFD7PowerDevice IPA60R360CFD7 Rev.2.1,2020-01-31Final Data Sheet 2Thermalcharacteristics Table3Thermalcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - case RthJC - - 5.54 °C/W - Thermal resistance, junction - ambient RthJA - - 62 °C/W leaded Thermal resistance, junction - ambient for SMD version RthJA - - - °C/W n.a. Soldering temperature, wavesoldering only allowed at leads Tsold - - 260 °C 1.6mm (0.063 in.) from case for 10s

600VCoolMOSªCFD7PowerDevice IPA60R360CFD7 Rev.2.1,2020-01-31Final Data Sheet 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 600 - - V VGS=0V,ID=1mA Gate threshold voltage V(GS)th 3.5 4 4.5 V VDS=VGS,ID=0.14mA Zero gate voltage drain current1) IDSS 37 µA VDS=600V,VGS=0V,Tj=25°C VDS=600V,VGS=0V,Tj=125°C Gate-source leakage current IGSS - - 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) 0.295 0.674 0.36 - Ω VGS=10V,ID=2.9A,Tj=25°C VGS=10V,ID=2.9A,Tj=150°C Gate resistance RG - 11.6 - Ω f=1MHz,opendrain Table5Dynamiccharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance Ciss - 679 - pF VGS=0V,VDS=400V,f=250kHz Output capacitance Coss - 11 - pF VGS=0V,VDS=400V,f=250kHz Effective output capacitance, energy related2) Co(er) - 20 - pF VGS=0V,VDS=0...400V Effective output capacitance, time related3) Co(tr) - 198 - pF ID=constant,VGS=0V,VDS=0...400V Turn-on delay time td(on) - 15.5 - ns VDD=400V,VGS=10V,ID=4.0A, RG=10.2Ω ;seetable9 Rise time tr - 12 - ns VDD=400V,VGS=10V,ID=4.0A, RG=10.2Ω ;seetable9 Turn-off delay time td(off) - 41.5 - ns VDD=400V,VGS=10V,ID=4.0A, RG=10.2Ω ;seetable9 Fall time tf - 8.5 - ns VDD=400V,VGS=10V,ID=4.0A, RG=10.2Ω ;seetable9 Table6Gatechargecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs - 4 - nC VDD=400V,ID=4.0A,VGS=0to10V Gate to drain charge Qgd - 4 - nC VDD=400V,ID=4.0A,VGS=0to10V Gate charge total Qg - 14 - nC VDD=400V,ID=4.0A,VGS=0to10V Gate plateau voltage Vplateau - 5.8 - V VDD=400V,ID=4.0A,VGS=0to10V 1) Maximum specification is defined by calculated six sigma upper confidence bound 2)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V 3)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V

600VCoolMOSªCFD7PowerDevice IPA60R360CFD7 Rev.2.1,2020-01-31Final Data Sheet Table7Reversediodecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Diode forward voltage VSD - 1.0 - V VGS=0V,IF=2.9A,Tj=25°C Reverse recovery time trr - 81 122 ns VR=400V,IF=4.0A,diF/dt=100A/µs; see table 8 Reverse recovery charge Qrr - 0.28 0.56 µC VR=400V,IF=4.0A,diF/dt=100A/µs; see table 8 Peak reverse recovery current Irrm - 6.4 - A VR=400V,IF=4.0A,diF/dt=100A/µs; see table 8

600VCoolMOSªCFD7PowerDevice IPA60R360CFD7 Rev.2.1,2020-01-31Final Data Sheet 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation TC[°C] Ptot[W] 100 125 150 Ptot=f(TC) Diagram2:Safeoperatingarea VDS[V] ID[A] 100 101 102 103 10-4 10-3 10-2 10-1 100 101 102 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram3:Safeoperatingarea VDS[V] ID[A] 100 101 102 103 10-4 10-3 10-2 10-1 100 101 102 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=80°C;D=0;parameter:tp Diagram4:Max.transientthermalimpedance tp[s] ZthJC[K/W] 10-5 10-4 10-3 10-2 10-1 100 10-2 10-1 100 101 0.5 0.2 0.1 0.05 0.01 0.02 single pulse ZthJC=f(tP);parameter:D=tp/T

600VCoolMOSªCFD7PowerDevice IPA60R360CFD7 Rev.2.1,2020-01-31Final Data Sheet Diagram5:Typ.outputcharacteristics VDS[V] ID[A] 20 V 10 V 8 V 7 V 6 V 5.5 V 5 V 4.5 V ID=f(VDS);Tj=25°C;parameter:VGS Diagram6:Typ.outputcharacteristics VDS[V] ID[A] 20 V 10 V 8 V 7 V 6 V 5.5 V 5 V 4.5 V ID=f(VDS);Tj=125°C;parameter:VGS Diagram7:Typ.drain-sourceon-stateresistance ID[A] RDS(on)[Ω ] 0.500 0.800 1.100 20 V 7 V 10 V 6.5 V 6 V 5.5 V RDS(on)=f(ID);Tj=125°C;parameter:VGS Diagram8:Drain-sourceon-stateresistance Tj[°C] RDS(on)[normalized] -50 -25 100 125 150 0.5 1.0 1.5 2.0 2.5 RDS(on)=f(Tj);ID=2.9A;VGS=10V

600VCoolMOSªCFD7PowerDevice IPA60R360CFD7 Rev.2.1,2020-01-31Final Data Sheet Diagram9:Typ.transfercharacteristics VGS[V] ID[A] 150 °C 25 °C ID=f(VGS);VDS=20V;parameter:Tj Diagram10:Typ.gatecharge Qgate[nC] VGS[V] 120 V 400 V VGS=f(Qgate);ID=4.0Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode VSD[V] IF[A] 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 10-1 100 101 102 125 °C 25 °C IF=f(VSD);parameter:Tj Diagram12:Avalancheenergy Tj[°C] EAS[mJ] 100 125 150 EAS=f(Tj);ID=2.0A;VDD=50V

600VCoolMOSªCFD7PowerDevice IPA60R360CFD7 Rev.2.1,2020-01-31Final Data Sheet Diagram13:Drain-sourcebreakdownvoltage Tj[°C] VBR(DSS)[V] -50 -25 100 125 150 540 570 600 630 660 690 VBR(DSS)=f(Tj);ID=1mA Diagram14:Typ.capacitances VDS[V] C[pF] 100 200 300 400 500 10-1 100 101 102 103 104 Ciss Coss Crss C=f(VDS);VGS=0V;f=250kHz Diagram15:Typ.Cossstoredenergy VDS[V] Eoss[µJ] 100 200 300 400 500 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Eoss=f(VDS)

600VCoolMOSªCFD7PowerDevice IPA60R360CFD7 Rev.2.1,2020-01-31Final Data Sheet 5TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform VDS IF R g1 R g 2 R g1 = R g 2 Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS VGS td(on) td(off)tr ton tf toff 10% 90% VDS VGS Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform VDS V(BR)DS ID VDS VDSID

600VCoolMOSªCFD7PowerDevice IPA60R360CFD7 Rev.2.1,2020-01-31Final Data Sheet 6PackageOutlines DIMENSIONSMIN.MAX.A2 H b Dcb2 EeLQøPL1 AA1 2.862.42 2.5428.70 0.9515.670.40 0.65 0.90 0.631.5116.15 Z8B00003319REVISIONISSUE DATE EUROPEAN PROJECTION 1021.03.20190 5mm DOCUMENT NO. 5:1234 123 Figure1OutlinePG-TO220FullPAK,dimensionsinmm

600VCoolMOSªCFD7PowerDevice IPA60R360CFD7 Rev.2.1,2020-01-31Final Data Sheet 7AppendixA Table11RelatedLinks

  • IFXCoolMOSCFD7Webpage:www.infineon.com
  • IFXCoolMOSCFD7applicationnote:www.infineon.com
  • IFXCoolMOSCFD7simulationmodel:www.infineon.com
  • IFXDesigntools:www.infineon.com

600VCoolMOSªCFD7PowerDevice IPA60R360CFD7 Rev.2.1,2020-01-31Final Data Sheet RevisionHistory IPA60R360CFD7 Revision:2020-01-31,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2019-06-06 Release of final version 2.1 2020-01-31 Updated package drawing and symbol ID Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2020InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.