IPA60R280E6

IPA60R280E6_14 INFINEON | Alldatasheet

Document overview

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Technical content

MetalOxideSemiconductorFieldEffectTransistor CoolMOS™E6600V 600VCoolMOS™E6PowerTransistor IPx60R280E6 DataSheet Rev.2.2 Final PowerManagement&Multimarket

600V CoolMOS" E6 Power Transistor IPP60R280E6, IPA60R280E6 IPW60R280E6 Final Data Sheet 2 Rev. 2.2, 2014-12-09

1 Description

CoolMOS " is a revolutionary technology for high voltage power MOSFET s, designed according to the superjunction (SJ) prin ciple and pioneered by Infineon T echnologies. CoolMOS " E6 series combines the experience of the leading SJ MOSFET supplier wi th high class innovation. The offered devices provide all bene fits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switchi ng applications even more efficient, more compact, lighter, and cooler.

Features

• Extremely low losses due to very low FOM R dson*Qg and Eoss
• Very high commutation ruggedness
• Easy to use/drive
• JEDEC 1) qualified, Pb-free plating, Halogen free

Applications

PFC stages, hard switching PWM stages and resonant switching PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom and UPS. Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. 1) J-STD20 and JESD22 Table 1 Key Performance Parameters Parameter Value Unit VDS @ Tj,max 650 V RDS(on),max 0.28 ! Qg,typ 43 nC ID,pulse 40 A Eoss @ 400V 3.7 µJ Body diode d i/dt 500 A/µs Type / Ordering Code Package Marking Related Links IPW60R280E6 PG-TO247 IFX CoolMOS Webpage IPP60R280E6 PG-TO220 6R280E6 IFX Design tools IPA60R280E6 PG-TO220 FullPAK

600V CoolMOS" E6 Power Transistor IPx60R280E6 Table of Contents Final Data Sheet 3 Rev. 2.2, 2014-12-09 Table of Contents

600V CoolMOS" E6 Power Transistor IPx60R280E6 Maximum ratings Final Data Sheet 4 Rev. 2.2, 2014-12-09

2 Maximum ratings

at Tj = 25 °C, unless otherwise specified. Table 2 Maximum ratings Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Continuous drain current 1) 1) Limited by Tj,max. Maximum duty cycle D=0.75 ID - - 13.8 A TC= 25 °C

8.7 TC= 100°C

Pulsed drain current 2) 2) Pulse width tp limited by Tj,max ID,pulse - - 40 A TC=25 °C Avalanche energy, single pulse EAS - - 284 mJ ID=2.4 A,VDD=50 V (see table 21) Avalanche energy, repetitive EAR - - 0.43 ID=2.4 A,VDD=50 V Avalanche current, repetitive IAR - - 2.4 A MOSFET dv/dt ruggedness dv/dt - - 50 V/ns VDS=0...480 V Gate source voltage VGS -20 - 20 V static -30 30 AC (f>1 Hz) Power dissipation for TO-220, TO-247, TO-262, TO-263 Ptot - - 104 W TC=25 °C Power dissipation for TO-220 FullPAK Ptot - - 32 Operating and storage temperature Tj,Tstg -55 - 150 °C Mounting torque TO-220, TO-247 - - 60 Ncm M3 and M3.5 screws Mounting torque TO-220 FullPAK 50 M2.5 screws Continuous diode forward current IS - - 12 A TC=25 °C Diode pulse current 2) IS,pulse - - 40 A TC=25 °C Reverse diode dv/dt 3) 3) Identical low side and high side switch with identical RG dv/dt - - 15 V/ns VDS=0...400 V,ISD " ID, Tj=25 °C Maximum diode commutation speed3) dif/dt 500 A/µs (see table 22)

600V CoolMOS" E6 Power Transistor IPx60R280E6 Thermal characteristics Final Data Sheet 5 Rev. 2.2, 2014-12-09

3 Thermal characteristics

Table 3 Thermal characteristics TO-220 (IPP60R280E6),TO- 247 (IPW60R280E6) Parameter Symbol Values Unit Note / Test ConditionMin. Typ. Max. Thermal resistance, junction - case RthJC - - 1.2 °C/W Thermal resistance, junction - ambient RthJA - - 62 leaded Soldering temperature, wavesoldering only allowed at leads Tsold - - 260 °C 1.6 mm (0.063 in.) from case for 10 s Table 4 Thermal characteristics TO-220FullPAK (IPA60R280 E6) Parameter Symbol Values Unit Note / Test ConditionMin. Typ. Max. Thermal resistance, junction - case RthJC - - 3.9 °C/W Thermal resistance, junction - ambient RthJA - - 80 leaded Soldering temperature, wavesoldering only allowed at leads Tsold - - 260 °C 1.6 mm (0.063 in.) from case for 10 s

600V CoolMOS" E6 Power Transistor IPx60R280E6

Electrical characteristics

Final Data Sheet 6 Rev. 2.2, 2014-12-09

4 Electrical characteristics

Electrical characteristics, at Tj=25 °C, unless otherwise specified. Table 5 Static characteristics Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Drain-source breakdown voltage V(BR)DSS 600 - - V VGS=0 V, ID=0.25 mA Gate threshold voltage VGS(th) 2.5 3 3.5 VDS=VGS, ID=0.43 mA Zero gate voltage drain current IDSS - - 1 µA VDS=600 V, VGS=0 V, Tj=25 °C - 10 - VDS=600 V, VGS=0 V, Tj=150 °C Gate-source leakage current IGSS - - 100 nA VGS=20 V, VDS=0 V Drain-source on-state resistance RDS(on) - 0.25 0.28 ! VGS=10 V, ID=6.5 A, Tj=25 °C - 0.66 - VGS=10 V, ID=6.5 A, Tj=150 °C Gate resistance RG - 7 - ! f=1 MHz, open drain Table 6 Dynamic characteristics Parameter Symbol Values Unit Note / Test ConditionMin. Typ. Max. Input capacitance Ciss - 950 - pF VGS=0 V, VDS=100 V, f=1 MHzOutput capacitance Coss - 60 - Effective output capacitance, energy related 1) 1) Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V (BR)DSS Co(er) - 40 - VGS=0 V, VDS=0...480 V Effective output capacitance, time related2) 2) Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V (BR)DSS Co(tr) - 183 - ID=constant, VGS=0 V VDS=0...480V Turn-on delay time td(on) - 11 - ns VDD=400 V, VGS=13 V, ID=6.5 A, RG= 3.4 ! (see table 20) Rise time tr - 9 - Turn-off delay time td(off) - 71 - Fall time tf - 9 -

600V CoolMOS" E6 Power Transistor IPx60R280E6 Final Data Sheet 7 Rev. 2.2, 2014-12-09 Table 7 Gate charge characteristics Parameter Symbol Values Unit Note / Test ConditionMin. Typ. Max. Gate to source charge Qgs - 5 - nC VDD=480 V, ID=6.5 A, VGS=0 to 10 VGate to drain charge Qgd - 22 - Gate charge total Qg - 43 - Gate plateau voltage Vplateau - 5.4 - V Table 8 Reverse diode characteristics Parameter Symbol Values Unit Note / Test ConditionMin. Typ. Max. Diode forward voltage VSD - 0.9 - V VGS=0 V, IF=6.5 A, Tj=25 °C Reverse recovery time trr - 345 - ns VR=400 V, IF=6.5 A, diF/dt=100 A/µs (see table 22) Reverse recovery charge Qrr - 4.5 - µC Peak reverse recovery current Irrm - 24 - A

600V CoolMOS" E6 Power Transistor IPx60R280E6 Electrical characteristics diagrams Final Data Sheet 8 Rev. 2.2, 2014-12-09

5 Electrical characteristics diagrams

TO-220, TO-247, TO-262, TO-263 Power dissipation TO-220 FullPAK Ptot = f(TC) Ptot = f(TC) Table 10 Max. transient thermal impedance TO-220, TO-247, TO-262, TO-263 Max. transient thermal impedance TO-220 FullPAK Z(thJC)=f(tp); parameter: D=t p/T Z(thJC)=f(tp); parameter: D=t p/T

600V CoolMOS" E6 Power Transistor IPx60R280E6 Electrical characteristics diagrams Final Data Sheet 9 Rev. 2.2, 2014-12-09 Table 11 Safe operating area TC=25 °C TO-220, TO-247, TO-262, TO-263 Safe operating area TC=25 °C TO-220 FullPAK ID=f(VDS); TC=25 °C; D=0; parameter tp ID=f(VDS); TC=25 °C; D=0; parameter tp Table 12 Safe operating area TC=80 °C TO-220, TO-247, TO-262, TO-263 Safe operating area TC=80 °C TO-220 FullPAK ID=f(VDS); TC=80 °C; D=0; parameter tp ID=f(VDS); TC=80 °C; D=0; parameter tp

600V CoolMOS" E6 Power Transistor IPx60R280E6 Electrical characteristics diagrams Final Data Sheet 10 Rev. 2.2, 2014-12-09 Table 13 Typ. output characteristics TC=25 °C Typ. output characteristics Tj=125 °C ID=f(VDS); Tj=25 °C; parameter: VGS ID=f(VDS); Tj=125 °C; parameter: VGS Table 14 Typ. drain-source on-state resistance Drain-source on-st ate resistance RDS(on)=f(ID); Tj=125 °C; parameter: VGS RDS(on)=f(Tj); ID=6.5 A; VGS=10 V

600V CoolMOS" E6 Power Transistor IPx60R280E6 Electrical characteristics diagrams Final Data Sheet 11 Rev. 2.2, 2014-12-09 Table 15 Typ. transfer characteristics Typ. gate charge ID=f(VGS); VDS=20V VGS=f(Qgate), ID=6.5A pulsed Table 16 Avalanche energy Drain-source breakdown voltage EAS=f(Tj); ID=2.4 A; VDD=50 V VBR(DSS)=f(Tj); ID=0.25 mA

600V CoolMOS" E6 Power Transistor IPx60R280E6 Electrical characteristics diagrams Final Data Sheet 12 Rev. 2.2, 2014-12-09 Table 17 Typ. capacitances Typ. Coss stored energy C=f(VDS); VGS=0 V; f=1 MHz EOSS=f(VDS) Table 18 Forward characteristics of reverse diode IF=f(VSD); parameter: Tj

600V CoolMOS" E6 Power Transistor IPx60R280E6 Test circuits Final Data Sheet 13 Rev. 2.2, 2014-12-09

6 Test circuits

Table 19 Switching times test circuit and waveform for induc tive load Switching times test circuit for inductive load Switching t ime waveform Table 20 Unclamped inductive load test circuit and waveform Unclamped inductive load test circuit Unclamped inductive waveform Table 21 Test circuit and waveform for diode characteristic s Test circuit for diode characteristics Diode recovery wave form VD S VGS VD S VGS td( on ) td ( off )tr ton tf toff 10% 90% VDSID VDS VD V(BR)DS ID VDS VDS ID RG1 RG2 RG1 = RG2 /# $ #/ $00 %$! '$! --, --, $ --, --," .$ $ ) #/#/ 00 $ 00$ $ . $)( " (00! ! . )" !

600V CoolMOS" E6 Power Transistor IPx60R280E6 Package outlines Final Data Sheet 14 Rev. 2.2, 2014-12-09

7 Package outlines

Figure 1 Outlines TO-247, dimensions in mm/inches

600V CoolMOS" E6 Power Transistor IPx60R280E6 Package outlines Final Data Sheet 15 Rev. 2.2, 2014-12-09 Figure 2 Outlines TO-220, dimensions in mm/inches

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600VCoolMOS™E6PowerTransistor IPx60R280E6 Rev.2.2,2015-02-09 RevisionHistory IPx60R280E6 Revision:2015-02-09,Rev.2.2 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2011-06-08 Release final data sheet 2.1 2011-09-14 - 2.2 2015-02-09 PG-TO220 FullPAK package outline update (creation:2014-12-09) WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2015InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.