IPA60R165CP_10 INFINEON | Alldatasheet
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V)DL: HI;><JG: B : G>I/ HGiJX V2 AIG6ADL<6I: 8=6G<: V" MIG: B : 9K 9IG6I: 9 V% ><=E: 6@8JGG: CI86E67>A>IN V. J6A>;>: 9for industrial grade applications 688DG9>C<ID' " !" V-7 ;G: : A: 69EA6I>C</ D% 08DB EA>6CI; Halogen free mold compound CoolMOS CP is designed for: V% 6G9HL>I8=>C<0* -0IDEDAD<>: H Maximum ratings, 6IT [ Y JCA: HHDI=: GL>H: HE: 8>;>: 9 Parameter Symbol Conditions Unit DCI>CJDJH9G6>C8JGG: CI+# I = T < Y 9 T < Y -JAH: 99G6>C8JGG: CI,# I =%af]dV T < Y K6A6C8=: : C: G<N H>C<A: EJAH: E 9L I = V == 3 .++ ^C K6A6C8=: : C: G<N G: E: I>I>K: t 9K ,#%-# E 9K I = V == K6A6C8=: 8JGG: CI G: E: I>I>K: t 9K ,#%-# I 9K 9 * , 0# " 19v (Ut GJ<<: 9C: HH 9v (Ut V =L
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$ 6I: HDJG8: KDAI6<: V @L deReZT O f % O -DL: G9>HH>E6I>DC P e\`e T < Y P , E: G6I>C<6C9HIDG6<: I: B E: G6IJG: T [ T deX u< * DJCI>C<IDGFJ: * H8G: LH + 8B Value v,) )'02 0'2 v+) V !0 1[%^Ri /.) O Q X%eja ,2 _< Product Summary Type Package Ordering Code Marking BI9/)K*/.<I I@&MH++) 0- /K*/.I I@&MH++) / : K E6<:
Maximum ratings, 6IT [ Y JCA: HHDI=: GL>H: HE: 8>;>: 9 Parameter Symbol Conditions Unit DCI>CJDJH9>D9: ;DGL6G98JGG: CI+# I L 9 !>D9: EJAH: 8JGG: C,# I L%af]dV /* / : K: GH: 9>D9: 9v (Ut .# Uv (Ut *. O(_d Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics 1=: GB 6AG: H>HI6C8: ?JC8I>DC 86H: R eYC< & ,'/. D(P R eYC9 ]VRUVU & & 1) 0DA9: G>C<I: B E: G6IJG: L6K: HDA9: G>C<DCAN6AADL: 96IA: 69H T d\`]U B B ;GDB 86H: ;DG H & & +/) u< Electrical characteristics, 6IT [ Y JCA: HHDI=: GL>H: HE: 8>;>: 9 Static characteristics !G6>C HDJG8: 7G: 6@9DLCKDAI6<: V ";K#=LL V @L
3 I =
/)) & & O $ 6I: I=G: H=DA9KDAI6<: V @L"eY# V =L6V @L I = B +'. , ,'. 5: GD<6I: KDAI6<: 9G6>C8JGG: CI I =LL V =L
3 V @L
T [ Y & & * w9 V =L 3 V @L T [ Y & *) & $ 6I: HDJG8: A: 6@6<: 8JGG: CI I @LL V @L
3 V =L
3 & & *)) _9 !G6>C HDJG8: DC HI6I: G: H>HI6C8: R =L"\`_# V @L V @L T [ Y & )'-) & $ 6I: G: H>HI6C8: R @ f * % O DE: C9G6>C Values 1=: GB 6AG: H>HI6C8: ?JC8I>DC R^SZV_e Value T < Y / : K E6<:
Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics &CEJI86E68>I6C8: C Zdd & +))) & a? , JIEJI86E68>I6C8: C \dd & *)) & " ;;: 8I>K: DJIEJI86E68>I6C8: : C: G<N " ;;: 8I>K: DJIEJI86E68>I6C8: I>B : 1JGC 1JGC D;;9: A6NI>B : t U"\WW# & .) & # 6AAI>B : t W & . & Gate Charge Characteristics $ 6I: IDHDJG8: 8=6G<: Q Xd & 2 & _< $ 6I: ID9G6>C8=6G<: Q XU & *,') & $ 6I: 8=6G<: IDI6A Q X & ,2 .+ $ 6I: EA6I: 6JKDAI6<: V a]ReVRf & .') & O Reverse Diode !>D9: ;DGL6G9KDAI6<: V L= V @L 3 I ? T [ Y & )'2 *'+ O / : K: GH: G: 8DK: GNI>B : t cc & ,2) & _d / : K: GH: G: 8DK: GN8=6G<: Q cc & 0'. & w< -: 6@G: K: GH: G: 8DK: GN8JGG: CI I cc^ & ,1 & 9 *#' 01! 6C9' " 0! +#-JAH: L>9I=t aA>B >I: 97NT [%^Ri ,#)>B >I: 9DCAN7NB 6M>B JB I: B E: G6IJG: -#/ : E: I>I>K: 6K6A6C8=: 86JH: H699>I>DC6AEDL: GADHH: HI=6I86C7: 86A8JA6I: 96HP 9O6E 9K$f. .#&L="B= 9> 9I" [ H 3 =<]Z_\\ 3 3 aVR\\5O";K#=LL 1[5M[^Ri >9: CI>86AADLH>9: 6C9=><=H>9: HL>I8= V K 3 I ?6I L Ui ?(Ut [ H <\`"Vc#>H6;>M: 986E68>I6C8: I=6I<>K: HI=: H6B : HIDG: 9: C: G<N6H DHHL=>A: 3 !0>HG>H>C<;GDB ID 3 =LL' ID V =LL' Values V @L f * % O V == V @L R @ V == V @L ID V @L / : K E6<:
1 Power dissipation 2 Safe operating area
P e\`e6W"T <# I =6W"V =LT < Y D 6) E6G6B : I: Gt a 3 Max. transient thermal impedance 4 Typ. output characteristics QeYC<6W"ea# I =6W"V =LT [ Y E6G6B : I: GD=t a(T E6G6B : I: GV @L 0 40 80 120 160 T C [°C] P tot [W] [ H [ H [ H B H B H 103102101100 102 101 100 10-1 V DS [V] I D [A] H>C<A: EJAH: )')* )')+ )'). )'* )'+ )'. 10110010-110-210-310-410-5 101 100 10-1 10-2 t p [s] Z thJC [K/W] *)O 0 5 10 15 20 25 V DS [V] I D [A] A>B >I: 97NDC HI6I: cVdZdeR_TV / : K E6<:
5 Typ. output characteristics 6 Typ. drain-source on-state resistance I =6W"V =LT [ Y E6G6B : I: GV @L E6G6B : I: GV @L 7 Drain-source on-state resistance 8 Typ. transfer characteristics V @L
3 I =6W"V @LPV =Ll7+lI =lR =L"\`_#^Ri
E6G6B : I: GT [ eja 21! 0.1 0.2 0.3 0.4 0.5 -60 -20 20 60 100 140 180 T j [°C] R DS(on) [ ] Y Y 100 0 2 4 6 8 10 V GS [V] I D [A] 0 5 10 15 20 25 V DS [V] I D [A] 0.2 0.4 0.6 0.8 1.2 0 10 20 30 40 50 I D [A] R DS(on) [ ] / : K E6<:
9 Typ. gate charge 10 Forward characteristics of reverse diode V @L6W"Q XReVI = EJAH: 9 I ?6W"V L=# E6G6B : I: GV == E6G6B : I: GT [
11 Avalanche energy 12 Drain-source breakdown voltage
E 9L6W"T [I = V ==
3 V ;K"=LL#6W"T [I =
B Y Y Y Y 102 101 100 10-1 0 0.5 1 1.5 2 V SD [V] I F [A] 0 10 20 30 40 Q gate [nC] V GS [V] 540 580 620 660 700 -60 -20 20 60 100 140 180 T j [°C] V BR(DSS) [V] 200 400 600 20 60 100 140 180 T j [°C] E AS [mJ] / : K E6<:
13 Typ. capacitances 14 Typ. Coss stored energy C 6W"V =LV @L 3 f * % O E \dd= W(V =L) 0 100 200 300 400 500 600 V DS [V] E oss [µJ] <Zdd <\dd <cdd 105 104 103 102 101 100 0 100 200 300 400 500 V DS [V] C [pF] / : K E6<:
Definition of diode switching characteristics / : K E6<:
PG-TO220-3-31/TO220-3-11: Outline/Fully isolated package (2500VAC; 1 minute) / : K E6<:
81726 Munich, Germany
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