IPA60R125CFD7 INFINEON | Alldatasheet

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Technical content

Features

  • Ultra-fastbodydiode
  • Lowgatecharge
  • Best-in-classreverserecoverycharge(Qrr)
  • ImprovedMOSFETreversediodedv/dtanddiF/dtruggedness
  • LowestFOMRDS(on)*QgandRDS(on)*Eoss
  • Best-in-classRDS(on)inSMDandTHDpackages Benefits
  • Excellenthardcommutationruggedness
  • Highestreliabilityforresonanttopologies
  • Highestefficiencywithoutstandingease-of-use/performancetradeoff
  • Enablingincreasedpowerdensitysolutions Potentialapplications SuiteableforSoftSwitchingtopologies Optimizedforphase-shiftfull-bridge(ZVS),LLCApplications–Server, Telecom,EVCharging ProductValidation:Qualifiedforindustrialapplicationsaccordingtothe relevanttestsofJEDEC47/20/22 Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 650 V RDS(on),max 125 mΩ Qg,typ 36 nC ID,pulse 66 A Eoss @ 400V 4.1 µJ Body diode diF/dt 1300 A/µs Type/OrderingCode Package Marking RelatedLinks IPA60R125CFD7 PG-TO 220 FullPAK 60R125F7 see Appendix A

600VCoolMOSªCFD7PowerTransistor IPA60R125CFD7 Rev.2.0,2018-02-15Final Data Sheet TableofContents

600VCoolMOSªCFD7PowerTransistor IPA60R125CFD7 Rev.2.0,2018-02-15Final Data Sheet 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Continuous drain current1) ID

7 A TC=25°C

TC=100°C Pulsed drain current2) ID,pulse - - 66 A TC=25°C Avalanche energy, single pulse EAS - - 78 mJ ID=4.4A; VDD=50V; see table 10 Avalanche energy, repetitive EAR - - 0.39 mJ ID=4.4A; VDD=50V; see table 10 Avalanche current, single pulse IAS - - 4.4 A - MOSFET dv/dt ruggedness dv/dt - - 120 V/ns VDS=0...400V Gate source voltage (static) VGS -20 - 20 V static; Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz) Power dissipation Ptot - - 32 W TC=25°C Storage temperature Tstg -55 - 150 °C - Operating junction temperature Tj -55 - 150 °C - Mounting torque - - - 50 Ncm M2.5 screws Continuous diode forward current IS - - 11 A TC=25°C Diode pulse current2) IS,pulse - - 66 A TC=25°C Reverse diode dv/dt3) dv/dt - - 70 V/ns VDS=0...400V,ISD<=11A,Tj=25°C see table 8 Maximum diode commutation speed diF/dt - - 1300 A/µs VDS=0...400V,ISD<=11A,Tj=25°C see table 8 Insulation withstand voltage VISO - - 2500 V Vrms,TC=25°C,t=1min 1) Limited by Tj max. 2) Pulse width tp limited by Tj,max 3) Identical low side and high side switch with identical RG

600VCoolMOSªCFD7PowerTransistor IPA60R125CFD7 Rev.2.0,2018-02-15Final Data Sheet 2Thermalcharacteristics Table3Thermalcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - case RthJC - - 3.92 °C/W - Thermal resistance, junction - ambient RthJA - - 80 °C/W leaded Thermal resistance, junction - ambient for SMD version RthJA - - - °C/W n.a. Soldering temperature, wavesoldering only allowed at leads Tsold - - 260 °C 1.6mm (0.063 in.) from case for 10s

600VCoolMOSªCFD7PowerTransistor IPA60R125CFD7 Rev.2.0,2018-02-15Final Data Sheet 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 600 - - V VGS=0V,ID=1mA Gate threshold voltage V(GS)th 3.5 4 4.5 V VDS=VGS,ID=0.39mA Zero gate voltage drain current1) IDSS 37 µA VDS=600V,VGS=0V,Tj=25°C VDS=600V,VGS=0V,Tj=125°C Gate-source leakage current IGSS - - 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) 0.104 0.237 0.125 - Ω VGS=10V,ID=7.8A,Tj=25°C VGS=10V,ID=7.8A,Tj=150°C Gate resistance RG - 8.8 - Ω f=1MHz,opendrain Table5Dynamiccharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance Ciss - 1503 - pF VGS=0V,VDS=400V,f=250kHz Output capacitance Coss - 28 - pF VGS=0V,VDS=400V,f=250kHz Effective output capacitance, energy related2) Co(er) - 51 - pF VGS=0V,VDS=0...400V Effective output capacitance, time related3) Co(tr) - 520 - pF ID=constant,VGS=0V,VDS=0...400V Turn-on delay time td(on) - 31 - ns VDD=400V,VGS=10V,ID=8.1A, RG=5.3Ω ;seetable9 Rise time tr - 14 - ns VDD=400V,VGS=10V,ID=8.1A, RG=5.3Ω ;seetable9 Turn-off delay time td(off) - 66 - ns VDD=400V,VGS=10V,ID=8.1A, RG=5.3Ω ;seetable9 Fall time tf - 6 - ns VDD=400V,VGS=10V,ID=8.1A, RG=5.3Ω ;seetable9 Table6Gatechargecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs - 9 - nC VDD=400V,ID=8.1A,VGS=0to10V Gate to drain charge Qgd - 12 - nC VDD=400V,ID=8.1A,VGS=0to10V Gate charge total Qg - 36 - nC VDD=400V,ID=8.1A,VGS=0to10V Gate plateau voltage Vplateau - 5.6 - V VDD=400V,ID=8.1A,VGS=0to10V 1) Maximum specification is defined by calculated six sigma upper confidence bound 2)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V 3)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V

600VCoolMOSªCFD7PowerTransistor IPA60R125CFD7 Rev.2.0,2018-02-15Final Data Sheet Table7Reversediodecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Diode forward voltage VSD - 1.0 - V VGS=0V,IF=7.8A,Tj=25°C Reverse recovery time trr - 102 152 ns VR=400V,IF=8.1A,diF/dt=100A/µs; see table 8 Reverse recovery charge Qrr - 0.47 0.94 µC VR=400V,IF=8.1A,diF/dt=100A/µs; see table 8 Peak reverse recovery current Irrm - 7.9 - A VR=400V,IF=8.1A,diF/dt=100A/µs; see table 8

600VCoolMOSªCFD7PowerTransistor IPA60R125CFD7 Rev.2.0,2018-02-15Final Data Sheet 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation TC[°C] Ptot[W] 100 125 150 Ptot=f(TC) Diagram2:Safeoperatingarea VDS[V] ID[A] 100 101 102 103 10-5 10-4 10-3 10-2 10-1 100 101 102 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram3:Safeoperatingarea VDS[V] ID[A] 100 101 102 103 10-5 10-4 10-3 10-2 10-1 100 101 102 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=80°C;D=0;parameter:tp Diagram4:Max.transientthermalimpedance tp[s] ZthJC[K/W] 10-5 10-4 10-3 10-2 10-1 100 10-2 10-1 100 101 0.5 0.2 0.1 0.02 0.05 single pulse 0.01 ZthJC=f(tP);parameter:D=tp/T

600VCoolMOSªCFD7PowerTransistor IPA60R125CFD7 Rev.2.0,2018-02-15Final Data Sheet Diagram5:Typ.outputcharacteristics VDS[V] ID[A] 100 20 V 10 V 8 V 7 V 6 V 5.5 V 5 V 4.5 V ID=f(VDS);Tj=25°C;parameter:VGS Diagram6:Typ.outputcharacteristics VDS[V] ID[A] 20 V 10 V 8 V 7 V 6 V 5.5 V 5 V 4.5 V ID=f(VDS);Tj=125°C;parameter:VGS Diagram7:Typ.drain-sourceon-stateresistance ID[A] RDS(on)[Ω ] 0.200 0.240 0.280 0.320 0.360 0.400 7 V 10 V 6.5 V 20 V 6 V 5.5 V RDS(on)=f(ID);Tj=125°C;parameter:VGS Diagram8:Drain-sourceon-stateresistance Tj[°C] RDS(on)[normalized] -50 -25 100 125 150 0.5 1.0 1.5 2.0 2.5 RDS(on)=f(Tj);ID=7.8A;VGS=10V

600VCoolMOSªCFD7PowerTransistor IPA60R125CFD7 Rev.2.0,2018-02-15Final Data Sheet Diagram9:Typ.transfercharacteristics VGS[V] ID[A] 100 150 °C 25 °C ID=f(VGS);VDS=20V;parameter:Tj Diagram10:Typ.gatecharge Qgate[nC] VGS[V] 120 V 400 V VGS=f(Qgate);ID=8.1Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode VSD[V] IF[A] 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 10-1 100 101 102 125 °C 25 °C IF=f(VSD);parameter:Tj Diagram12:Avalancheenergy Tj[°C] EAS[mJ] 100 125 150 EAS=f(Tj);ID=4.4A;VDD=50V

600VCoolMOSªCFD7PowerTransistor IPA60R125CFD7 Rev.2.0,2018-02-15Final Data Sheet Diagram13:Drain-sourcebreakdownvoltage Tj[°C] VBR(DSS)[V] -50 -25 100 125 150 540 570 600 630 660 690 VBR(DSS)=f(Tj);ID=1mA Diagram14:Typ.capacitances VDS[V] C[pF] 100 200 300 400 500 10-1 100 101 102 103 104 105 Ciss Coss Crss C=f(VDS);VGS=0V;f=250kHz Diagram15:Typ.Cossstoredenergy VDS[V] Eoss[µJ] 100 200 300 400 500 Eoss=f(VDS)

600VCoolMOSªCFD7PowerTransistor IPA60R125CFD7 Rev.2.0,2018-02-15Final Data Sheet 5TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform VDS IF R g1 R g 2 R g1 = R g 2 Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS VGS td(on) td(off)tr ton tf toff 10% 90% VDS VGS Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform VDS V(BR)DS ID VDS VDSID

600VCoolMOSªCFD7PowerTransistor IPA60R125CFD7 Rev.2.0,2018-02-15Final Data Sheet 6PackageOutlines H b Dcb2 Ee1eLQ¡3L1ND1 ADIMA1 DOCUMENT NO.Z8B00003319 2.5 REVISION0524-10-2014ISSUE DATE EUROPEAN PROJECTION 1.130 0.177MIN0.0950.026 0.0160.6170.0370.092 0.394 0.5030.1160.1240.111 0.353 2.862.42 0.9515.670.40 0.65 10.00 2.833.152.9512.78 8.97329.75 0.90 0.631.5116.15 3.503.383.4513.75 10.659.83 0.100 (BSC)0.20031.171 0.0590.6360.025 0.035 0.419 0.1360.1330.1380.541 0.3870 INCHES0.193MAX0.112SCALE 5mm DIMENSIONS DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. Figure1OutlinePG-TO220FullPAK,dimensionsinmm/inches

600VCoolMOSªCFD7PowerTransistor IPA60R125CFD7 Rev.2.0,2018-02-15Final Data Sheet 7AppendixA Table11RelatedLinks

  • IFXCoolMOSCFD7Webpage:www.infineon.com
  • IFXCoolMOSCFD7applicationnote:www.infineon.com
  • IFXCoolMOSCFD7simulationmodel:www.infineon.com
  • IFXDesigntools:www.infineon.com

600VCoolMOSªCFD7PowerTransistor IPA60R125CFD7 Rev.2.0,2018-02-15Final Data Sheet RevisionHistory IPA60R125CFD7 Revision:2018-02-15,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2018-02-15 Release of final version TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2018InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.