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MetalOxideSemiconductorFieldEffectTransistor CoolMOS™P6 600VCoolMOS™P6PowerTransistor IPx60R099P6 DataSheet Rev.2.1 Final PowerManagement&Multimarket

600VCoolMOS™P6PowerTransistor IPW60R099P6,IPP60R099P6,IPA60R099P6 Rev.2.1,2015-05-18Final Data Sheet TO-247 tab TO-220 TO-220FP Drain Pin 2, Tab Gate Pin 1 Source Pin 3 1Description CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™P6seriescombinesthe experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. TheoffereddevicesprovideallbenefitsofafastswitchingSJMOSFET whilenotsacrificingeaseofuse.Extremelylowswitchingandconduction lossesmakeswitchingapplicationsevenmoreefficient,morecompact, lighterandcooler.

Features

  • IncreasedMOSFETdv/dtruggedness
  • ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
  • Veryhighcommutationruggedness
  • Easytouse/drive
  • Pb-freeplating,Halogenfreemoldcompound
  • QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22)

Applications

PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server,Telecom andUPS. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 650 V RDS(on),max 99 mΩ Qg.typ 70 nC ID,pulse 109 A Eoss@400V 8.8 µJ Body diode di/dt 300 A/µs Type/OrderingCode Package Marking RelatedLinks IPW60R099P6 PG-TO 247 IPP60R099P6 PG-TO 220 IPA60R099P6 PG-TO 220 FullPAK 6R099P6 see Appendix A

600VCoolMOS™P6PowerTransistor IPW60R099P6,IPP60R099P6,IPA60R099P6 Rev.2.1,2015-05-18Final Data Sheet TableofContents

600VCoolMOS™P6PowerTransistor IPW60R099P6,IPP60R099P6,IPA60R099P6 Rev.2.1,2015-05-18Final Data Sheet 2Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Continuous drain current1) ID 37.9

24.0 A TC=25°C

TC=100°C Pulsed drain current2) ID,pulse - - 109 A TC=25°C Avalanche energy, single pulse EAS - - 796 mJ ID=6.6A; VDD=50V; see table 10 Avalanche energy, repetitive EAR - - 1.21 mJ ID=6.6A; VDD=50V; see table 10 Avalanche current, repetitive IAR - - 6.6 A - MOSFET dv/dt ruggedness dv/dt - - 100 V/ns VDS=0...400V Gate source voltage (static) VGS -20 - 20 V static; Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz) Power dissipation (Non FullPAK) TO-220, TO-247 Ptot - - 278 W TC=25°C Power dissipation (FullPAK) TO-220FP Ptot - - 34 W TC=25°C Storage temperature Tstg -55 - 150 °C - Operating junction temperature Tj -55 - 150 °C - Mounting torque (Non FullPAK) TO-220, TO-247 - - - 60 Ncm M3 and M3.5 screws Mounting torque (FullPAK) TO-220FP - - - 50 Ncm M2.5 screws Continuous diode forward current IS - - 32.9 A TC=25°C Diode pulse current2) IS,pulse - - 109 A TC=25°C Reverse diode dv/dt3) dv/dt - - 15 V/ns VDS=0...400V,ISD<=IS,Tj=25°C see table 8 Maximum diode commutation speed dif/dt - - 300 A/µs VDS=0...400V,ISD<=IS,Tj=25°C see table 8 Insulation withstand voltage for TO-220FP VISO - - 2500 V Vrms,TC=25°C,t=1min 1) Limited by Tj max. Maximum duty cycle D=0.75 2) Pulse width tp limited by Tj,max 3)IdenticallowsideandhighsideswitchwithidenticalRG

600VCoolMOS™P6PowerTransistor IPW60R099P6,IPP60R099P6,IPA60R099P6 Rev.2.1,2015-05-18Final Data Sheet 3Thermalcharacteristics Table3Thermalcharacteristics(NonFullPAK)TO-220,TO-247 Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - case RthJC - - 0.45 °C/W - Thermal resistance, junction - ambient RthJA - - 62 °C/W leaded Soldering temperature, wavesoldering only allowed at leads Tsold - - 260 °C 1.6mm (0.063 in.) from case for 10s Table4Thermalcharacteristics(FullPAK)TO-220FP Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - case RthJC - - 3.65 °C/W - Thermal resistance, junction - ambient RthJA - - 80 °C/W leaded Soldering temperature, wavesoldering only allowed at leads Tsold - - 260 °C 1.6mm (0.063 in.) from case for 10s

600VCoolMOS™P6PowerTransistor IPW60R099P6,IPP60R099P6,IPA60R099P6 Rev.2.1,2015-05-18Final Data Sheet 4Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table5Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 600 - - V VGS=0V,ID=1mA Gate threshold voltage V(GS)th 3.5 4.0 4.5 V VDS=VGS,ID=1.21mA Zero gate voltage drain current IDSS - µA VDS=600,VGS=0V,Tj=25°C VDS=600,VGS=0V,Tj=150°C Gate-source leakage current IGSS - - 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) 0.089 0.232 0.099 - Ω VGS=10V,ID=14.5A,Tj=25°C VGS=10V,ID=14.5A,Tj=150°C Gate resistance RG - 1 - Ω f=1MHz,opendrain Table6Dynamiccharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance Ciss - 3330 - pF VGS=0V,VDS=100V,f=1MHz Output capacitance Coss - 140 - pF VGS=0V,VDS=100V,f=1MHz Effective output capacitance, energy related1) Co(er) - 110 - pF VGS=0V,VDS=0...400V Effective output capacitance, time related2) Co(tr) - 495 - pF ID=constant,VGS=0V,VDS=0...400V Turn-on delay time td(on) - 20 - ns VDD=400V,VGS=13V,ID=18.1A, RG=1.7Ω ;seetable9 Rise time tr - 10 - ns VDD=400V,VGS=13V,ID=18.1A, RG=1.7Ω ;seetable9 Turn-off delay time td(off) - 50 - ns VDD=400V,VGS=13V,ID=18.1A, RG=1.7Ω ;seetable9 Fall time tf - 5 - ns VDD=400V,VGS=13V,ID=18.1A, RG=1.7Ω ;seetable9 Table7Gatechargecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs - 20 - nC VDD=400V,ID=18.1A,VGS=0to10V Gate to drain charge Qgd - 24 - nC VDD=400V,ID=18.1A,VGS=0to10V Gate charge total Qg - 70 - nC VDD=400V,ID=18.1A,VGS=0to10V Gate plateau voltage Vplateau - 6.1 - V VDD=400V,ID=18.1A,VGS=0to10V 1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V 2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V

600VCoolMOS™P6PowerTransistor IPW60R099P6,IPP60R099P6,IPA60R099P6 Rev.2.1,2015-05-18Final Data Sheet Table8Reversediodecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Diode forward voltage VSD - 0.9 - V VGS=0V,IF=18.1A,Tj=25°C Reverse recovery time trr - 470 - ns VR=400V,IF=18.1A,diF/dt=100A/µs; see table 8 Reverse recovery charge Qrr - 9 - µC VR=400V,IF=18.1A,diF/dt=100A/µs; see table 8 Peak reverse recovery current Irrm - 37 - A VR=400V,IF=18.1A,diF/dt=100A/µs; see table 8

600VCoolMOS™P6PowerTransistor IPW60R099P6,IPP60R099P6,IPA60R099P6 Rev.2.1,2015-05-18Final Data Sheet 5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation(NonFullPAK) TC[°C] Ptot[W] 100 125 150 100 150 200 250 300 Ptot=f(TC) Diagram2:Powerdissipation(FullPAK) TC[°C] Ptot[W] 100 125 150 Ptot=f(TC) Diagram3:Max.transientthermalimpedance(NonFullPAK) tp[s] ZthJC[K/W] 10-5 10-4 10-3 10-2 10-1 10-2 10-1 100 101 0.5 0.2 0.1 0.05 0.02 0.01 single pulse ZthJC=f(tP);parameter:D=tp/T Diagram4:Max.transientthermalimpedance(FullPAK) tp[s] ZthJC[K/W] 10-5 10-4 10-3 10-2 10-1 100 101 10-2 10-1 100 101 0.5 0.2 0.1 0.05 0.02 0.01 single pulse ZthJC=f(tP);parameter:D=tp/T

600VCoolMOS™P6PowerTransistor IPW60R099P6,IPP60R099P6,IPA60R099P6 Rev.2.1,2015-05-18Final Data Sheet Diagram5:Safeoperatingarea(NonFullPAK) VDS[V] ID[A] 100 101 102 103 10-3 10-2 10-1 100 101 102 103 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram6:Safeoperatingarea(FullPAK) VDS[V] ID[A] 100 101 102 103 10-4 10-3 10-2 10-1 100 101 102 103 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram7:Safeoperatingarea(NonFullPAK) VDS[V] ID[A] 100 101 102 103 10-3 10-2 10-1 100 101 102 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=80°C;D=0;parameter:tp Diagram8:Safeoperatingarea(FullPAK) VDS[V] ID[A] 100 101 102 103 10-4 10-3 10-2 10-1 100 101 102 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=80°C;D=0;parameter:tp

600VCoolMOS™P6PowerTransistor IPW60R099P6,IPP60R099P6,IPA60R099P6 Rev.2.1,2015-05-18Final Data Sheet Diagram9:Typ.outputcharacteristics VDS[V] ID[A] 100 110 120 20 V 10 V 8 V 7 V 6 V 5.5 V 5 V 4.5 V ID=f(VDS);Tj=25°C;parameter:VGS Diagram10:Typ.outputcharacteristics VDS[V] ID[A] 20 V 10 V 8 V 7 V 6 V 5.5 V 5 V 4.5 V ID=f(VDS);Tj=125°C;parameter:VGS Diagram11:Typ.drain-sourceon-stateresistance ID[A] RDS(on)[Ω ] 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 20 V 5.5 V 6 V 6.5 V 7 V 10 V RDS(on)=f(ID);Tj=125°C;parameter:VGS Diagram12:Drain-sourceon-stateresistance Tj[°C] RDS(on)[Ω ] -50 -25 100 125 150 0.05 0.10 0.15 0.20 0.25 0.30 98% typ RDS(on)=f(Tj);ID=14.5A;VGS=10V

600VCoolMOS™P6PowerTransistor IPW60R099P6,IPP60R099P6,IPA60R099P6 Rev.2.1,2015-05-18Final Data Sheet Diagram13:Typ.transfercharacteristics VGS[V] ID[A] 100 120 25 °C 150 °C ID=f(VGS);VDS=20V;parameter:Tj Diagram14:Typ.gatecharge Qgate[nC] VGS[V] 120 V 480 V VGS=f(Qgate);ID=18.1Apulsed;parameter:VDD Diagram15:Forwardcharacteristicsofreversediode VSD[V] IF[A] 0.0 0.5 1.0 1.5 2.0 10-1 100 101 102 25 °C 125 °C IF=f(VSD);parameter:Tj Diagram16:Avalancheenergy Tj[°C] EAS[mJ] 100 125 150 100 200 300 400 500 600 700 800 EAS=f(Tj);ID=6.6A;VDD=50V

600VCoolMOS™P6PowerTransistor IPW60R099P6,IPP60R099P6,IPA60R099P6 Rev.2.1,2015-05-18Final Data Sheet Diagram17:Drain-sourcebreakdownvoltage Tj[°C] VBR(DSS)[V] -75 -50 -25 100 125 150 175 520 540 560 580 600 620 640 660 680 700 VBR(DSS)=f(Tj);ID=1mA Diagram18:Typ.capacitances VDS[V] C[pF] 100 200 300 400 500 100 101 102 103 104 Ciss Coss Crss C=f(VDS);VGS=0V;f=1MHz Diagram19:Typ.Cossstoredenergy VDS[V] Eoss[µJ] 100 200 300 400 500 Eoss=f(VDS)

600VCoolMOS™P6PowerTransistor IPW60R099P6,IPP60R099P6,IPA60R099P6 Rev.2.1,2015-05-18Final Data Sheet 6TestCircuits Table9Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform t V ,I Irrm IF VDS 10 %Irrm trr tF tS QF QS dIF / dt dIrr / dt VDS(peak) Qrr = QF +QS trr =tF +tS VDS IF VDS IF Rg1 Rg 2 Rg1 = Rg 2 Table10Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS VGS td(on) td(off)tr ton tf toff 10% 90% VDS VGS Table11Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform VDS V(BR)DS ID VDS VDSID

600VCoolMOS™P6PowerTransistor IPW60R099P6,IPP60R099P6,IPA60R099P6 Rev.2.1,2015-05-18Final Data Sheet 7PackageOutlines Figure1OutlinePG-TO247,dimensionsinmm/inches

600VCoolMOS™P6PowerTransistor IPW60R099P6,IPP60R099P6,IPA60R099P6 Rev.2.1,2015-05-18Final Data Sheet Figure2OutlinePG-TO220,dimensionsinmm/inches

600VCoolMOS™P6PowerTransistor IPW60R099P6,IPP60R099P6,IPA60R099P6 Rev.2.1,2015-05-18Final Data Sheet H b Dcb2 Ee1eLQ¡3L1ND1 ADIMA1 DOCUMENT NO.Z8B00003319 2.5 REVISION0405-05-2014ISSUE DATE EUROPEAN PROJECTION 1.130 0.177MIN0.0950.026 0.0160.6170.0370.092 0.394 0.5030.1160.1240.111 0.353 2.862.42 0.9515.670.40 0.65 10.00 2.833.152.9512.78 8.97329.75 0.90 0.631.5116.15 3.503.383.4513.75 10.659.83 0.100 (BSC)0.20031.171 0.0590.6360.025 0.035 0.419 0.1360.1330.1380.541 0.3870 INCHES0.193MAX0.112SCALE 5mm Figure3OutlinePG-TO220FullPAK,dimensionsinmm/inches

600VCoolMOS™P6PowerTransistor IPW60R099P6,IPP60R099P6,IPA60R099P6 Rev.2.1,2015-05-18Final Data Sheet 8AppendixA Table12RelatedLinks

  • IFXCoolMOSTMP6Webpage:www.infineon.com
  • IFXCoolMOSTMP6applicationnote:www.infineon.com
  • IFXCoolMOSTMP6simulationmodel:www.infineon.com
  • IFXDesigntools:www.infineon.com

600VCoolMOS™P6PowerTransistor IPW60R099P6,IPP60R099P6,IPA60R099P6 Rev.2.1,2015-05-18Final Data Sheet RevisionHistory IPW60R099P6, IPP60R099P6, IPA60R099P6 Revision:2015-05-18,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2014-03-07 Release of final version 2.1 2015-05-18 Rdson max change from 105 to 99mOhm WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2015InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.