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MetalOxideSemiconductorFieldEffectTransistor CoolMOS™C7 600VCoolMOS™C7PowerTransistor IPA60R099C7 DataSheet Rev.2.0 Final PowerManagement&Multimarket

600VCoolMOS™C7PowerTransistor IPA60R099C7 Rev.2.0,2015-08-10Final Data Sheet TO-220FP Drain Pin 2 Gate Pin 1 Source Pin 3 1Description CoolMOS™C7isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies. 600VCoolMOS™C7seriescombinestheexperienceoftheleadingSJ MOSFETsupplierwithhighclassinnovation. The600VC7isthefirsttechnologyeverwithRDS(on)*Abelow1Ohm*mm².

Features

  • Suitableforhardandsoftswitching(PFCandhighperformanceLLC)
  • IncreasedMOSFETdv/dtruggednessto120V/ns
  • IncreasedefficiencyduetobestinclassFOMRDS(on)*EossandRDS(on)*Qg
  • BestinclassRDS(on)/package
  • QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22) Benefits
  • IncreasedeconomiesofscalebyuseinPFCandPWMtopologiesinthe application
  • Higherdv/dtlimitenablesfasterswitchingleadingtohigherefficiency
  • Enablinghighersystemefficiencybylowerswitchinglosses
  • Increasedpowerdensitysolutionsduetosmallerpackages
  • Suitableforapplicationssuchasserver,telecomandsolar
  • Higherswitchingfrequenciespossiblewithoutlossinefficiencydueto lowEossandQg

Applications

PFCstagesandPWMstages(TTF,LLC)forhighpower/performance SMPSe.g.Computing,Server,Telecom,UPSandSolar. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 650 V RDS(on),max 99 mΩ Qg.typ 42 nC ID,pulse 83 A ID,continuous @ Tj<150°C 36 A Eoss@400V 4.95 µJ Body diode di/dt 360 A/µs Type/OrderingCode Package Marking RelatedLinks IPA60R099C7 PG-TO 220 FullPAK 60C7099 see Appendix A

600VCoolMOS™C7PowerTransistor IPA60R099C7 Rev.2.0,2015-08-10Final Data Sheet TableofContents

600VCoolMOS™C7PowerTransistor IPA60R099C7 Rev.2.0,2015-08-10Final Data Sheet 2Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Continuous drain current1) ID

8 A TC=25°C

TC=100°C Pulsed drain current2) ID,pulse - - 83 A TC=25°C Avalanche energy, single pulse EAS - - 97 mJ ID=5A; VDD=50V; see table 10 Avalanche energy, repetitive EAR - - 0.49 mJ ID=5A; VDD=50V; see table 10 Avalanche current, single pulse IAS - - 5.0 A - MOSFET dv/dt ruggedness dv/dt - - 120 V/ns VDS=0...400V Gate source voltage (static) VGS -20 - 20 V static; Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz) Power dissipation Ptot - - 33 W TC=25°C Storage temperature Tstg -55 - 150 °C - Operating junction temperature Tj -55 - 150 °C - Mounting torque - - - 50 Ncm M2.5 screws Continuous diode forward current IS - - 12 A TC=25°C Diode pulse current2) IS,pulse - - 83 A TC=25°C Reverse diode dv/dt3) dv/dt - - 20 V/ns VDS=0...400V,ISD<=7.7A,Tj=25°C see table 8 Maximum diode commutation speed dif/dt - - 360 A/µs VDS=0...400V,ISD<=7.7A,Tj=25°C see table 8 Insulation withstand voltage VISO - - 2500 V Vrms,TC=25°C,t=1min 1) Limited by Tj max. 2) Pulse width tp limited by Tj,max 3) Identical low side and high side switch

600VCoolMOS™C7PowerTransistor IPA60R099C7 Rev.2.0,2015-08-10Final Data Sheet 3Thermalcharacteristics Table3Thermalcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - case RthJC - - 3.79 °C/W - Thermal resistance, junction - ambient RthJA - - 80 °C/W leaded Thermal resistance, junction - ambient for SMD version RthJA - - - °C/W n.a. Soldering temperature, wavesoldering only allowed at leads Tsold - - 260 °C 1.6mm (0.063 in.) from case for 10s

600VCoolMOS™C7PowerTransistor IPA60R099C7 Rev.2.0,2015-08-10Final Data Sheet 4Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 600 - - V VGS=0V,ID=1mA Gate threshold voltage V(GS)th 3 3.5 4 V VDS=VGS,ID=0.49mA Zero gate voltage drain current IDSS - µA VDS=600,VGS=0V,Tj=25°C VDS=600,VGS=0V,Tj=150°C Gate-source leakage current IGSS - - 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) 0.085 0.190 0.099 - Ω VGS=10V,ID=9.7A,Tj=25°C VGS=10V,ID=9.7A,Tj=150°C Gate resistance RG - 0.82 - Ω f=1MHz,opendrain Table5Dynamiccharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance Ciss - 1819 - pF VGS=0V,VDS=400V,f=250kHz Output capacitance Coss - 33 - pF VGS=0V,VDS=400V,f=250kHz Effective output capacitance, energy related1) Co(er) - 63 - pF VGS=0V,VDS=0...400V Effective output capacitance, time related2) Co(tr) - 641 - pF ID=constant,VGS=0V,VDS=0...400V Turn-on delay time td(on) - 11.8 - ns VDD=400V,VGS=13V,ID=9.7A, RG=5.3Ω ;seetable9 Rise time tr - 8 - ns VDD=400V,VGS=13V,ID=9.7A, RG=5.3Ω ;seetable9 Turn-off delay time td(off) - 54 - ns VDD=400V,VGS=13V,ID=9.7A, RG=5.3Ω ;seetable9 Fall time tf - 4.5 - ns VDD=400V,VGS=13V,ID=9.7A, RG=5.3Ω ;seetable9 Table6Gatechargecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs - 9 - nC VDD=400V,ID=9.7A,VGS=0to10V Gate to drain charge Qgd - 14 - nC VDD=400V,ID=9.7A,VGS=0to10V Gate charge total Qg - 42 - nC VDD=400V,ID=9.7A,VGS=0to10V Gate plateau voltage Vplateau - 5.0 - V VDD=400V,ID=9.7A,VGS=0to10V 1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V 2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V

600VCoolMOS™C7PowerTransistor IPA60R099C7 Rev.2.0,2015-08-10Final Data Sheet Table7Reversediodecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Diode forward voltage VSD - 0.9 - V VGS=0V,IF=9.7A,Tj=25°C Reverse recovery time trr - 350 - ns VR=400V,IF=9.7A,diF/dt=100A/µs; see table 8 Reverse recovery charge Qrr - 4.4 - µC VR=400V,IF=9.7A,diF/dt=100A/µs; see table 8 Peak reverse recovery current Irrm - 27 - A VR=400V,IF=9.7A,diF/dt=100A/µs; see table 8

600VCoolMOS™C7PowerTransistor IPA60R099C7 Rev.2.0,2015-08-10Final Data Sheet 5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation TC[°C] Ptot[W] 100 125 150 Ptot=f(TC) Diagram2:Safeoperatingarea VDS[V] ID[A] 100 101 102 103 10-4 10-3 10-2 10-1 100 101 102 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram3:Safeoperatingarea VDS[V] ID[A] 100 101 102 103 10-4 10-3 10-2 10-1 100 101 102 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=80°C;D=0;parameter:tp Diagram4:Max.transientthermalimpedance tp[s] ZthJC[K/W] 10-5 10-4 10-3 10-2 10-1 10-2 10-1 100 101 0.5 0.2 0.1 0.05 0.02 0.01 single pulse ZthJC=f(tP);parameter:D=tp/T

600VCoolMOS™C7PowerTransistor IPA60R099C7 Rev.2.0,2015-08-10Final Data Sheet Diagram5:Typ.outputcharacteristics VDS[V] ID[A] 100 120 140 20 V 10 V 8 V 7 V 6 V 5.5 V 5 V 4.5 V ID=f(VDS);Tj=25°C;parameter:VGS Diagram6:Typ.outputcharacteristics VDS[V] ID[A] 20 V 10 V 8 V 7 V 6 V 5.5 V 5 V 4.5 V ID=f(VDS);Tj=125°C;parameter:VGS Diagram7:Typ.drain-sourceon-stateresistance ID[A] RDS(on)[Ω ] 0.18 0.20 0.22 0.24 0.26 0.28 0.30 20 V 5.5 V 6 V 6.5 V 7 V 10 V RDS(on)=f(ID);Tj=125°C;parameter:VGS Diagram8:Drain-sourceon-stateresistance Tj[°C] RDS(on)[Ω ] -50 -25 100 125 150 0.05 0.06 0.07 0.08 0.09 0.10 0.11 0.12 0.13 0.14 0.15 0.16 0.17 0.18 0.19 0.20 0.21 0.22 0.23 typ 98% RDS(on)=f(Tj);ID=9.7A;VGS=10V

600VCoolMOS™C7PowerTransistor IPA60R099C7 Rev.2.0,2015-08-10Final Data Sheet Diagram9:Typ.transfercharacteristics VGS[V] ID[A] 100 120 140 150 °C 25 °C ID=f(VGS);VDS=20V;parameter:Tj Diagram10:Typ.gatecharge Qgate[nC] VGS[V] 400 V 120 V VGS=f(Qgate);ID=9.7Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode VSD[V] IF[A] 0.00 0.20 0.40 0.60 0.80 1.00 1.20 1.40 1.60 1.80 2.00 10-1 100 101 102 125 °C 25 °C IF=f(VSD);parameter:Tj Diagram12:Avalancheenergy Tj[°C] EAS[mJ] 100 125 150 100 EAS=f(Tj);ID=5.0A;VDD=50V

600VCoolMOS™C7PowerTransistor IPA60R099C7 Rev.2.0,2015-08-10Final Data Sheet Diagram13:Drain-sourcebreakdownvoltage Tj[°C] VBR(DSS)[V] -60 -30 120 150 520 540 560 580 600 620 640 660 680 700 VBR(DSS)=f(Tj);ID=1mA Diagram14:Typ.capacitances VDS[V] C[pF] 100 200 300 400 10-1 100 101 102 103 104 105 Ciss Coss Crss C=f(VDS);VGS=0V;f=250kHz Diagram15:Typ.Cossstoredenergy VDS[V] Eoss[µJ] 100 200 300 400 Eoss=f(VDS)

600VCoolMOS™C7PowerTransistor IPA60R099C7 Rev.2.0,2015-08-10Final Data Sheet 6TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform t V ,I Irrm IF VDS 10 %Irrm trr tF tS QF QS dIF / dt dIrr / dt VDS(peak) Qrr = QF +QS trr =tF +tS VDS IF VDS IF Rg1 Rg 2 Rg1 = Rg 2 Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS VGS td(on) td(off)tr ton tf toff 10% 90% VDS VGS Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform VDS V(BR)DS ID VDS VDSID

600VCoolMOS™C7PowerTransistor IPA60R099C7 Rev.2.0,2015-08-10Final Data Sheet 7PackageOutlines H b Dcb2 Ee1eLQ¡3L1ND1 ADIMA1 DOCUMENT NO.Z8B00003319 2.5 REVISION0524-10-2014ISSUE DATE EUROPEAN PROJECTION 1.130 0.177MIN0.0950.026 0.0160.6170.0370.092 0.394 0.5030.1160.1240.111 0.353 2.862.42 0.9515.670.40 0.65 10.00 2.833.152.9512.78 8.97329.75 0.90 0.631.5116.15 3.503.383.4513.75 10.659.83 0.100 (BSC)0.20031.171 0.0590.6360.025 0.035 0.419 0.1360.1330.1380.541 0.3870 INCHES0.193MAX0.112SCALE 5mm DIMENSIONS DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. Figure1OutlinePG-TO220FullPAK,dimensionsinmm/inches

600VCoolMOS™C7PowerTransistor IPA60R099C7 Rev.2.0,2015-08-10Final Data Sheet 8AppendixA Table11RelatedLinks

  • IFXCoolMOSTMC7Webpage:www.infineon.com
  • IFXCoolMOSTMC7applicationnote:www.infineon.com
  • IFXCoolMOSTMC7simulationmodel:www.infineon.com
  • IFXDesigntools:www.infineon.com

600VCoolMOS™C7PowerTransistor IPA60R099C7 Rev.2.0,2015-08-10Final Data Sheet RevisionHistory IPA60R099C7 Revision:2015-08-10,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2015-08-10 Release of final version WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2015InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.