IPA600N25NM3S INFINEON | Alldatasheet

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Technical content

Features

  • Idealforhighfrequencyswitchingandsync.rec.
  • ExcellentgatechargexRDS(on)product(FOM)
  • Verylowon-resistanceRDS(on)
  • N-channel,normallevel
  • 100%avalanchetested
  • Pb-freeplating;RoHScompliant
  • Halogen-freeaccordingtoIEC61249-2-21 Productvalidation QualifiedaccordingtoJEDECStandard Table1KeyPerformanceParameters Parameter Value Unit VDS 250 V RDS(on),max 60 mΩ ID 15 A Qoss 46 nC QG(0V..10V) 22 nC Type/OrderingCode Package Marking RelatedLinks IPA600N25NM3S PG-TO 220 FullPAK 600N253S -

OptiMOSTM3Power-Transistor,250V IPA600N25NM3S Rev.2.1,2019-09-02Final Data Sheet TableofContents

OptiMOSTM3Power-Transistor,250V IPA600N25NM3S Rev.2.1,2019-09-02Final Data Sheet 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Continuous drain current ID

10 A VGS=10V,TC=25°C

VGS=10V,TC=100°C Pulsed drain current1) ID,pulse - - 60 A TC=25°C Avalanche energy, single pulse2) EAS - - 210 mJ ID=15A,RGS=25Ω Gate source voltage VGS -20 - 20 V - Power dissipation Ptot - - 38 W TC=25°C Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category; DIN IEC 68-1: 55/175/56 2Thermalcharacteristics Table3Thermalcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - case RthJC - - 3.9 °C/W - 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 250 - - V VGS=0V,ID=1mA Gate threshold voltage VGS(th) 2 - 4 V VDS=VGS,ID=89µA Zero gate voltage drain current IDSS 0.1 100 µA VDS=200V,VGS=0V,Tj=25°C VDS=200V,VGS=0V,Tj=125°C Gate-source leakage current IGSS - 1 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 49.0 60.0 mΩ VGS=10V,ID=15A Gate resistance3) RG - 2.5 - Ω - Transconductance gfs - 37 - S |VDS|≥2|ID|RDS(on)max,ID=15A 1) See Diagram 3 for more detailed information 2) See Diagram 13 for more detailed information 3) Defined by design. Not subject to production test.

OptiMOSTM3Power-Transistor,250V IPA600N25NM3S Rev.2.1,2019-09-02Final Data Sheet Table5Dynamiccharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance1) Ciss - 1800 2300 pF VGS=0V,VDS=100V,f=1MHz Output capacitance Coss - 110 - pF VGS=0V,VDS=100V,f=1MHz Reverse transfer capacitance Crss - 5 - pF VGS=0V,VDS=100V,f=1MHz Turn-on delay time td(on) - 10 - ns VDD=100V,VGS=10V,ID=12A, RG,ext=1.6Ω Rise time tr - 10 - ns VDD=100V,VGS=10V,ID=12A, RG,ext=1.6Ω Turn-off delay time td(off) - 22 - ns VDD=100V,VGS=10V,ID=12A, RG,ext=1.6Ω Fall time tf - 8 - ns VDD=100V,VGS=10V,ID=12A, RG,ext=1.6Ω Table6Gatechargecharacteristics2) Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs - 8 - nC VDD=100V,ID=12A,VGS=0to10V Gate charge at threshold Qg(th) - 5 - nC VDD=100V,ID=12A,VGS=0to10V Gate to drain charge Qgd - 3 - nC VDD=100V,ID=12A,VGS=0to10V Switching charge Qsw - 5 - nC VDD=100V,ID=12A,VGS=0to10V Gate charge total1) Qg - 22 29 nC VDD=100V,ID=12A,VGS=0to10V Gate plateau voltage Vplateau - 4.3 - V VDD=100V,ID=12A,VGS=0to10V Output charge Qoss - 46 - nC VDD=100V,VGS=0V Table7Reversediode Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Diode continuous forward current IS - - 15 A TC=25°C Diode pulse current IS,pulse - - 60 A TC=25°C Diode forward voltage VSD - 0.87 1.2 V VGS=0V,IF=15A,Tj=25°C Reverse recovery time1) trr - 127 - ns VR=100V,IF=12A,diF/dt=100A/µs Reverse recovery charge1) Qrr - 604 - nC VR=100V,IF=12A,diF/dt=100A/µs 1) Defined by design. Not subject to production test. 2) See ″Gate charge waveforms″ for parameter definition

OptiMOSTM3Power-Transistor,250V IPA600N25NM3S Rev.2.1,2019-09-02Final Data Sheet 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation TC[°C] Ptot[W] 100 125 150 175 200 Ptot=f(TC) Diagram2:Draincurrent TC[°C] ID[A] 100 125 150 175 200 0.0 2.5 5.0 7.5 10.0 12.5 15.0 ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea VDS[V] ID[A] 100 101 102 103 10-3 10-2 10-1 100 101 102 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram4:Max.transientthermalimpedance tp[s] ZthJC[K/W] 10-5 10-4 10-3 10-2 10-1 100 101 10-2 10-1 100 101 single pulse 0.01 0.02 0.05 0.1 0.2 0.5 ZthJC=f(tp);parameter:D=tp/T

OptiMOSTM3Power-Transistor,250V IPA600N25NM3S Rev.2.1,2019-09-02Final Data Sheet Diagram5:Typ.outputcharacteristics VDS[V] ID[A] 6 V 7 V 8 V 10 V 5 V 4.5 V ID=f(VDS),Tj=25°C;parameter:VGS Diagram6:Typ.drain-sourceonresistance ID[A] RDS(on)[mΩ ] 100 125 150 4.5 V 5 V 6 V 7 V 8 V 10 V RDS(on)=f(ID),Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics VGS[V] ID[A] 175 °C 25 °C ID=f(VGS),|VDS|>2|ID|RDS(on)max;parameter:Tj Diagram8:Typ.drain-sourceonresistance VGS[V] RDS(on)[mΩ ] 100 120 140 160 180 175 °C 25 °C RDS(on)=f(VGS),ID=15A;parameter:Tj

OptiMOSTM3Power-Transistor,250V IPA600N25NM3S Rev.2.1,2019-09-02Final Data Sheet Diagram9:Normalizeddrain-sourceonresistance Tj[°C] RDS(on)(normalizedto25°C) -80 -40 120 160 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 RDS(on)=f(Tj),ID=15A,VGS=10V Diagram10:Typ.gatethresholdvoltage Tj[°C] VGS(th)[V] -80 -40 120 160 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 890 µA 89 µA VGS(th=f(Tj),VGS=VDS;parameter:ID Diagram11:Typ.capacitances VDS[V] C[pF] 100 150 200 250 100 101 102 103 104 Ciss Coss Crss C=f(VDS);VGS=0V;f=1MHz Diagram12:Forwardcharacteristicsofreversediode VSD[V] IF[A] 0.00 0.25 0.50 0.75 1.00 1.25 1.50 10-1 100 101 102 25 °C 25 °C, max 175 °C 175 °C, max IF=f(VSD);parameter:Tj

OptiMOSTM3Power-Transistor,250V IPA600N25NM3S Rev.2.1,2019-09-02Final Data Sheet Diagram13:Avalanchecharacteristics tAV[µs] IAV[A] 100 101 102 103 10-1 100 101 102 25 °C 100 °C 150 °C IAS=f(tAV);RGS=25Ω ;parameter:Tj,start Diagram14:Typ.gatecharge Qgate[nC] VGS[V] 50 V 125 V 200 V VGS=f(Qgate),ID=12Apulsed,Tj=25°C;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Tj[°C] VBR(DSS)[V] -80 -40 120 160 200 230 240 250 260 270 280 290 VBR(DSS)=f(Tj);ID=1mA Diagram Gate charge waveforms

OptiMOSTM3Power-Transistor,250V IPA600N25NM3S Rev.2.1,2019-09-02Final Data Sheet 5PackageOutlines DIMENSIONSMIN.MAX.A2 H b Dcb2 EeLQøPL1 AA1 2.862.42 2.5428.70 1.2015.670.40 0.65 0.90 0.631.5016.15 Z8B00181328REVISIONISSUE DATE EUROPEAN PROJECTION 0323.07.20180 5mm DOCUMENT NO. 5:1234 123 Figure1OutlinePG-TO220FullPAK,dimensionsinmm/inches

OptiMOSTM3Power-Transistor,250V IPA600N25NM3S Rev.2.1,2019-09-02Final Data Sheet RevisionHistory IPA600N25NM3S Revision:2019-09-02,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2019-07-25 Release of final version 2.1 2019-09-02 Update package outline Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2019InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.