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Document overview

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Technical content

Features

  • ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
  • Veryhighcommutationruggedness
  • Easytouse/drive
  • Pb-freeplating,Halogenfreemoldcompound
  • Qualifiedforstandardgradeapplications

Applications

PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 550 V RDS(on),max 0.5 Ω ID 11.1 A Qg,typ 18.7 nC ID,pulse 24 A Eoss @ 400V 2.02 µJ Type/OrderingCode Package Marking RelatedLinks IPA50R500CE PG-TO 220 FullPAK 5R500CE see Appendix A

500VCoolMOSªCEPowerTransistor IPA50R500CE Rev.2.2,2016-07-12Final Data Sheet TableofContents

500VCoolMOSªCEPowerTransistor IPA50R500CE Rev.2.2,2016-07-12Final Data Sheet 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Continuous drain current1) ID 11.1

7.0 A TC = 25°C

TC = 100°C Pulsed drain current2) ID,pulse - - 24 A TC=25°C Avalanche energy, single pulse EAS - - 129 mJ ID =2.9A; VDD = 50V Avalanche energy, repetitive EAR - - 0.20 mJ ID =2.9A; VDD = 50V Avalanche current, repetitive IAR - - 2.9 A - MOSFET dv/dt ruggedness dv/dt - - 50 V/ns VDS=0...400V Gate source voltage VGS -20 -30

30 V static;

AC (f>1 Hz) Power disspiation (Full PAK) Ptot - - 28.0 W TC=25°C Operating and storage temperature Tj,Tstg -40 - 150 °C - Mounting torque - - - 50 Ncm M2.5 screws Continuous diode forward current IS - - 4.6 A TC=25°C Diode pulse current2) IS,pulse - - 24.0 A TC = 25°C Reverse diode dv/dt3) dv/dt - - 15 V/ns VDS=0...400V,ISD<=IS,Tj=25°C Maximum diode commutation speed3) dif/dt - - 500 A/µs VDS=0...400V,ISD<=IS,Tj=25°C Insulation withstand voltage for TO-220 FullPAK VISO - - 2500 V Vrms,TC=25°C,t=1min 2Thermalcharacteristics Table3ThermalcharacteristicsTO220FullPAK Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - case RthJC - - 4.46 °C/W - Thermal resistance, junction - ambient RthJA - - 80 °C/W leaded Soldering temperature, wavesoldering only allowed at leads Tsold - - 260 °C 1.6mm (0.063 in.) from case for 10s 1) Limited by Tj max <150°C, Maximum Duty Cycle D = 0.5, TO220 equivalent 2) Pulse width tp limited by Tj,max 3)VDClink=400V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG

500VCoolMOSªCEPowerTransistor IPA50R500CE Rev.2.2,2016-07-12Final Data Sheet 3Electricalcharacteristics Table4Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 500 - - V VGS=0V,ID=1mA Gate threshold voltage V(GS)th 2.50 3 3.50 V VDS=VGS,ID=0.2mA Zero gate voltage drain current IDSS - µA VDS=500V,VGS=0V,Tj=25°C VDS=500V,VGS=0V,Tj=150°C Gate-source leakage curent IGSS - - 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) 0.45 1.17 0.50 - Ω VGS=13V,ID=2.3A,Tj=25°C VGS=13V,ID=2.3A,Tj=150°C Gate resistance RG - 3 - Ω f=1MHz,opendrain Table5Dynamiccharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance Ciss - 433 - pF VGS=0V,VDS=100V,f=1MHz Output capacitance Coss - 31 - pF VGS=0V,VDS=100V,f=1MHz Effective output capacitance, energy related1) Co(er) - 25 - pF VGS=0V,VDS=0...400V Effective output capacitance, time related2) Co(tr) - 100 - pF ID=constant,VGS=0V,VDS=0...400V Turn-on delay time td(on) - 6 - ns VDD=400V,VGS=13V,ID=2.9A, RG=3.4Ω Rise time tr - 5 - ns VDD=400V,VGS=13V,ID=2.9A, RG=3.4Ω Turn-off delay time td(off) - 30 - ns VDD=400V,VGS=13V,ID=2.9A, RG=3.4Ω Fall time tf - 12 - ns VDD=400V,VGS=13V,ID=2.9A, RG=3.4Ω Table6Gatechargecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs - 2.3 - nC VDD=400V,ID=2.9A,VGS=0to10V Gate to drain charge Qgd - 10 - nC VDD=400V,ID=2.9A,VGS=0to10V Gate charge total Qg - 18.7 - nC VDD=400V,ID=2.9A,VGS=0to10V Gate plateau voltage Vplateau - 5.3 - V VDD=400V,ID=2.9A,VGS=0to10V 1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V 2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V

500VCoolMOSªCEPowerTransistor IPA50R500CE Rev.2.2,2016-07-12Final Data Sheet Table7Reversediodecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Diode forward voltage VSD - 0.85 - V VGS=0V,IF=2.9A,Tj=25°C Reverse recovery time trr - 180 - ns VR=400V,IF=2.9A,diF/dt=100A/µs Reverse recovery charge Qrr - 1.2 - µC VR=400V,IF=2.9A,diF/dt=100A/µs Peak reverse recovery current Irrm - 12 - A VR=400V,IF=2.9A,diF/dt=100A/µs

500VCoolMOSªCEPowerTransistor IPA50R500CE Rev.2.2,2016-07-12Final Data Sheet 4Electricalcharacteristicsdiagrams Powerdissipation(FullPAK) TC[°C] Ptot[W] 120 160 Ptot=f(TC) Max.transientthermalimpedance(FullPAK) tp[s] ZthJC[K/W] 10-5 10-4 10-3 10-2 10-1 100 10-2 10-1 100 101 0.5 0.2 0.1 0.05 0.02 0.01 single pulse ZthJC=f(tP);parameter:D=tp/T Safeoperatingarea(FullPAK)Tj=25°C VDS[V] ID[A] 100 101 102 103 10-2 10-1 100 101 102 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=25°C;D=0;parameter:tp Safeoperatingarea(FullPAK)Tj=80°C VDS[V] ID[A] 100 101 102 103 10-2 10-1 100 101 102 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=80°C;D=0;parameter:tp

500VCoolMOSªCEPowerTransistor IPA50R500CE Rev.2.2,2016-07-12Final Data Sheet Typ.outputcharacteristicsTj=25°C VDS[V] ID[A] 20 V 10 V 8 V 7 V 6 V 5.5 V 5 V 4.5 V ID=f(VDS);Tj=25°C;parameter:VGS Typ.outputcharacteristicsTj=125°C VDS[V] ID[A] 20 V 10 V 8 V 7 V 6 V 5.5 V 5 V 4.5 V ID=f(VDS);Tj=125°C;parameter:VGS Typ.drain-sourceon-stateresistance ID[A] RDS(on)[Ω ] 0.80 1.00 1.20 1.40 1.60 1.80 5 V 5.5 V 6 V 6.5 V 7 V 10 V RDS(on)=f(ID);Tj=125°C;parameter:VGS Drain-sourceon-stateresistance Tj[°C] RDS(on)[Ω ] -50 -25 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 98% typ RDS(on)=f(Tj);ID=2.3A;VGS=13V

500VCoolMOSªCEPowerTransistor IPA50R500CE Rev.2.2,2016-07-12Final Data Sheet Typ.transfercharacteristics VGS[V] ID[A] 150 °C 25 °C ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Typ.gatecharge Qgate[nC] VGS[V] 400 V 120 V VGS=f(Qgate);ID=2.9Apulsed;parameter:VDD Avalancheenergy Tj[°C] EAS[mJ] 100 125 150 175 100 120 140 EAS=f(Tj);ID=2.9A;VDD=50V Drain-sourcebreakdownvoltage Tj[°C] VBR(DSS)[V] -50 -25 100 125 150 440 460 480 500 520 540 560 580 VBR(DSS)=f(Tj);ID=1mA

500VCoolMOSªCEPowerTransistor IPA50R500CE Rev.2.2,2016-07-12Final Data Sheet Typ.capacitances VDS[V] C[pF] 100 200 300 400 500 100 101 102 103 104 Ciss Coss Crss C=f(VDS);VGS=0V;f=1MHz Typ.Cossstoredenergy VDS[V] Eoss[µJ] 100 200 300 400 500 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Eoss=f(VDS) Forwardcharacteristicsofreversediode VSD[V] IF[A] 0.4 0.6 0.8 1.0 1.2 1.4 10-1 100 101 102 125 °C 25 °C IF=f(VSD);parameter:Tj

500VCoolMOSªCEPowerTransistor IPA50R500CE Rev.2.2,2016-07-12Final Data Sheet 5TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform t V ,I Irrm IF VDS 10 %Irrm trr tF tS QF QS dIF / dt dIrr / dt VDS(peak) Qrr = QF +QS trr =tF +tS VDS IF VDS IF Rg1 Rg 2 Rg1 = Rg 2 Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS VGS td(on) td(off)tr ton tf toff 10% 90% VDS VGS Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform VDS V(BR)DS ID VDS VDSID

500VCoolMOSªCEPowerTransistor IPA50R500CE Rev.2.2,2016-07-12Final Data Sheet 6PackageOutlines H b Dcb2 Ee1eLQ¡3L1ND1 ADIMA1 DOCUMENT NO.Z8B00181328 2.5 REVISION0129-04-2016ISSUE DATE EUROPEAN PROJECTION 1.130 0.177MIN0.0950.026 0.0160.6170.0470.092 0.394 0.5030.1180.1240.111 0.353 2.862.42 1.2015.670.40 0.65 10.00 2.833.153.0012.78 8.97329.75 0.90 0.631.5016.15 3.503.383.4513.75 10.659.83 0.100 (BSC)0.20031.171 0.0590.6360.025 0.035 0.419 0.1360.1330.1380.541 0.3870 INCHES0.193MAX0.110SCALE 5mm DIMENSIONS DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. Figure1OutlinePG-TO220FullPAK,dimensionsinmm/inches

500VCoolMOSªCEPowerTransistor IPA50R500CE Rev.2.2,2016-07-12Final Data Sheet 7AppendixA Table11RelatedLinks

  • IFXCoolMOSWebpage:www.infineon.com
  • IFXDesigntools:www.infineon.com

500VCoolMOSªCEPowerTransistor IPA50R500CE Rev.2.2,2016-07-12Final Data Sheet RevisionHistory IPA50R500CE Revision:2016-07-12,Rev.2.2 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2014-06-12 Release of final version 2.1 2016-06-13 Updated ID ratings, package marking code & package drawing 2.2 2016-07-12 Changed marking information in page 1 TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2016InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.