IPA50R140CP INFINEON | Alldatasheet

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W4 EHB: M?: ;8;IJ/ =L"a\`#?D1, W)EM;IJ<?=KH;E<C ;H?J/ , + N. Y W2 BJH7BEM=7J;9>7H=; W" NJH;C ;: L : JH7J;: W% ?=>F;7A9KHH;DJ97F78?B?JO W-8 <H;;B;7: FB7J?D=/ E% 09EC FB?7DJ W. K7B!<?;: CoolMOS CP is designed for: W% 7H: 7D: IE<JIM?J9>?D=0* -0<EHI;HL;HFEM;HIKFFB?;I W * -# <EH 15 + EJ;8EEA7: 7FJ;H -!-7D: ) !13 W-4 * IJ7=;I<EH0;HL;H : 7FJ;H Maximum ratings, 7JT \\ Z KDB;IIEJ>;HM?I;IF;9?<?;: Parameter Symbol Conditions Unit EDJ?DKEKI: H7?D9KHH;DJ*# I = T < Z 9 T < Z -KBI;: : H7?D9KHH;DJ+# I =%bg^eW T < Z L7B7D9>;;D;H=O I?D=B;FKBI; E 9L I = V == 3 /*/ _C L7B7D9>;;D;H=O H;F;J?J?L;t 9K +#%,# E 9K I = V == L7B7D9>;9KHH;DJ H;F;J?J?L;t 9K +#%,# I 9K 9 * , 0# " 1: v (Vt HK==;: D;II : v (Vt V =L

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Maximum ratings, 7JT \\ Z KDB;IIEJ>;HM?I;IF;9?<?;: Parameter Symbol Conditions Unit EDJ?DKEKI: ?E: ;<EHM7H: 9KHH;DJ*# I L 9 !?E: ;FKBI;9KHH;DJ+# I L%bg^eW ./ / ;L;HI;: ?E: ;: v (Vt -# Vv (Vt *. O(\`e Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics 1>;HC 7BH;I?IJ7D9; @KD9J?ED 97I; R fZC< & & ,'/. D(P R fZC9 ^WSVWV & & /+ 0EB: ;H?D=J;C F;H7JKH; M7L;IEB: ;H?D=EDBO7BBEM;: 7JB;7: I T ea^V C C <HEC 97I;<EH I & & +/) v< Electrical characteristics, 7JT \\ Z KDB;IIEJ>;HM?I;IF;9?<?;: Static characteristics !H7?D IEKH9;8H;7A: EMDLEBJ7=; V ";K#=LL V @L

3 I =

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3 V @L

T \\ Z & & + x9 V =L T \\ Z & +) & $ 7J; IEKH9;B;7A7=;9KHH;DJ I @LL V @L

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3 & & *)) \9 !H7?D IEKH9;ED IJ7J;H;I?IJ7D9; R =L"a\# V @L V @L T \\ Z & )',+ & $ 7J;H;I?IJ7D9; R @ f * % P EF;D: H7?D Value T < Z Values 1>;HC 7BH;I?IJ7D9; @KD9J?ED S_T[W\`f / ;L F7=;

Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics &DFKJ97F79?J7D9; C [ee & +.-) & b? , KJFKJ97F79?J7D9; C aee & **) & " <<;9J?L;EKJFKJ97F79?J7D9; ;D;H=O " <<;9J?L;EKJFKJ97F79?J7D9; J?C ; 1KHD 1KHD # 7BBJ?C ; t X & 1') & $ 7J; >7H=; >7H79J;H?IJ?9I $ 7J;JE: H7?D9>7H=; Q YV & *. & $ 7J;9>7H=;JEJ7B Q Y & -1 /- $ 7J;FB7J;7KLEBJ7=; V b^SfWSg & .'+ & O Reverse Diode !?E: ;<EHM7H: LEBJ7=; V L= V @L 3 I ? T \\ Z & )'2 *'+ O / ;L;HI;H;9EL;HOJ?C ; t dd & -)) & \e / ;L;HI;H;9EL;HO9>7H=; Q dd & .'/ & x< -;7AH;L;HI;H;9EL;HO9KHH;DJ I dd_ & +/ & 9 )#' 01! 7D: ' " 0! )?C ?J;: EDBO8O1\\%_Sj +#-KBI;M?: J>t bB?C ?J;: 8OT \\%_Sj ,#/ ;F;J?J?L;7L7B7D9>;97KI;I7: : ?J?ED7BFEM;HBEII;IJ>7J97D8;97B9KB7J;: 7IP 9O6E 9K$f. &L="B= : ? : J" \\ I 3 =<^[\] 3 3 bWS]5O";K#=LL 1\\5M\\_Sj ?: ;DJ?97BBEM7D: >?=>I?: ;IM?J9> JE V =LL' /# C a"Wd#?I7<?N;: 97F79?J7D9;J>7J=?L;IJ>;I7C ;IJEH;: ;D;H=O7IC aeeM>?B;V =L?IH?I?D=<HEC JE V =LL' JE V =LL' V K 3 I ?6I L Vi ?(Vt \\ I Values V @L f * % P V == V @L R @ V == V @L JE V @L / ;L F7=;

1 Power dissipation 2 Safe operating area

P faf6X"T <# I =6X"V =LT < Z D 6) F7H7C ;J;Ht b 3 Max. transient thermal impedance 4 Typ. output characteristics R"fZC<#6X"fb I =6X"V =LT \\ Z F7H7C ;J;HD=t b(T F7H7C ;J;HV @L 0 50 100 150 T C [°C] P tot [W] \\ I \\ I \\ I C I C I 103102101100 102 101 100 10-1 V DS [V] I D [A] I?D=B;FKBI; )')* )')+ )'). )'* )'+ )'. 10110010-110-210-310-410-5 101 100 10-1 10-2 t p [s] Z thJC [K/W] 0 5 10 15 20 V DS [V] I D [A] B?C ?J;: 8OED IJ7J; dWe[efS\`UW / ;L F7=;

5 Typ. output characteristics 6 Typ. drain-source on-state resistance I =6X"V =LT \\ Z R =L"a\#6X"I =T \\ Z F7H7C ;J;HV @L F7H7C ;J;HV @L 7 Drain-source on-state resistance 8 Typ. transfer characteristics R =L"a\#6X"T \\I = V @L

3 I =6X"V @LQV =Lm7+mI =mR =L"a\`#_Sj

F7H7C ;J;HT \\ fkb 0.05 0.1 0.15 0.2 0.25 0.3 0.35 -60 -30 0 30 60 90 120 150 180 T j [°C] R DS(on) [ ] Z Z 0 3 5 8 10 V GS [V] I D [A] 0 5 10 15 20 25 V DS [V] I D [A] 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 10 20 30 40 50 60 I D [A] R DS(on) [ ] / ;L F7=;

9 Typ. gate charge 10 Forward characteristics of reverse diode V @L6X"Q YSfWI = FKBI;: I ?6X"V L=# F7H7C ;J;HV == F7H7C ;J;HT \\

11 Avalanche energy 12 Drain-source breakdown voltage

E 9L6X"T \\I = V ==

3 V ;K"=LL#6X"T \\I =

C Z Z Z Z 102 101 100 10-1 0 0.5 1 1.5 2 V SD [V] I F [A] 0 10 20 30 40 50 Q gate [nC] V GS [V] 440 460 480 500 520 540 560 580 -60 -20 20 60 100 140 180 T j [°C] V BR(DSS) [V] 100 200 300 400 500 600 700 25 75 125 175 T j [°C] E AS [mJ] / ;L F7=;

13 Typ. capacitances 14 Typ. Coss stored energy C 6X"V =LV @L 3 f * % P E aee= X(V =L) 0 100 200 300 400 500 V DS [V] E oss [µJ] <[ee <aee <dee 105 104 103 102 101 100 0 100 200 300 400 500 V DS [V] C [pF] / ;L F7=;

Definition of diode switching characteristics / ;L F7=;

PG-TO220-3-31: Outline / Fully isolated package (2500VAC; 1minute) / ;L F7=;

81726 Munich, Germany

© 2007 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. / ;L F7=;