IPA045N10N3GXKSA1

IPA045N10N3G_16 INFINEON | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 10

Technical content

Features

• N-channel,normallevel
• ExcellentgatechargexRDS(on)product(FOM)
• Verylowon-resistanceRDS(on)
• 175°Coperatingtemperature
• Pb-freeleadplating;RoHScompliant
• QualifiedaccordingtoJEDEC1)fortargetapplication
• Idealforhigh-frequencyswitchingandsynchronousrectification
• Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 100 V RDS(on),max 4.5 mΩ ID 64 A Type/OrderingCode Package Marking RelatedLinks IPA045N10N3 G PG-TO220-FP 045N10N - 1) J-STD20 and JESD22

OptiMOSTM3Power-Transistor,100V IPA045N10N3G Rev.2.4,2016-01-22Final Data Sheet TableofContents

OptiMOSTM3Power-Transistor,100V IPA045N10N3G Rev.2.4,2016-01-22Final Data Sheet 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Continuous drain current ID

45 A TC=25°C1)

TC=100°C Pulsed drain current1) ID,pulse - - 256 A TC=25°C Avalanche energy, single pulse EAS - - 540 mJ ID=64A,RGS=25Ω Gate source voltage VGS -20 - 20 V - Power dissipation Ptot - - 39 W TC=25°C Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category; DIN IEC 68-1: 55/175/56 2Thermalcharacteristics Table3Thermalcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction-case RthJC - - 3.8 K/W - Thermal resistance, juntion-ambient, Leaded RthJA - - 80 K/W - 3Electricalcharacteristics Table4Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 100 - - V VGS=0V,ID=1mA Gate threshold voltage VGS(th) 2 2.7 3.5 V VDS=VGS,ID=150µA Zero gate voltage drain current IDSS 0.1 100 µA VDS=100V,VGS=0V,Tj=25°C VDS=100V,VGS=0V,Tj=125°C Gate-source leakage current IGSS - 1 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) 3.9 4.7 4.5 7.7 mΩ VGS=10V,ID=64A VGS=6V,ID=32A Gate resistance RG - 1.4 - Ω - Transconductance gfs 60 119 - S |VDS|>2|ID|RDS(on)max,ID=64A 1) See Diagram 3

OptiMOSTM3Power-Transistor,100V IPA045N10N3G Rev.2.4,2016-01-22Final Data Sheet Table5Dynamiccharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance Ciss - 6320 8410 pF VGS=0V,VDS=50V,f=1MHz Output capacitance Coss - 1100 1460 pF VGS=0V,VDS=50V,f=1MHz Reverse transfer capacitance Crss - 41 - pF VGS=0V,VDS=50V,f=1MHz Turn-on delay time td(on) - 25 - ns VDD=50V,VGS=10V,ID=64A, RG,ext=1.6Ω Rise time tr - 47 - ns VDD=50V,VGS=10V,ID=64A, RG,ext=1.6Ω Turn-off delay time td(off) - 50 - ns VDD=50V,VGS=10V,ID=64A, RG,ext=1.6Ω Fall time tf - 15 - ns VDD=50V,VGS=10V,ID=64A, RG,ext=1.6Ω Table6Gatechargecharacteristics1) Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs - 28 - nC VDD=50V,ID=64A,VGS=0to10V Gate to drain charge Qgd - 16 - nC VDD=50V,ID=64A,VGS=0to10V Switching charge Qsw - 25 - nC VDD=50V,ID=64A,VGS=0to10V Gate charge total Qg - 88 117 nC VDD=50V,ID=64A,VGS=0to10V Gate plateau voltage Vplateau - 4.4 - V VDD=50V,ID=64A,VGS=0to10V Output charge Qoss - 117 155 nC VDD=50V,VGS=0V Table7Reversediode Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Diode continous forward current IS - - 64 A TC=25°C Diode pulse current IS,pulse - - 256 A TC=25°C Diode forward voltage VSD - 0.9 1 V VGS=0V,IF=64A,Tj=25°C Reverse recovery time trr - 69 - ns VR=50V,IF=64A,diF/dt=100A/µs Reverse recovery charge Qrr - 140 - nC VR=50V,IF=64A,diF/dt=100A/µs 1) See ″Gate charge waveforms″ for parameter definition

OptiMOSTM3Power-Transistor,100V IPA045N10N3G Rev.2.4,2016-01-22Final Data Sheet 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation TC[°C] Ptot[W] 100 150 200 Ptot=f(TC) Diagram2:Draincurrent TC[°C] ID[A] 100 150 200 ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea VDS[V] ID[A] 10-1 100 101 102 103 10-1 100 101 102 103 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram4:Max.transientthermalimpedance tp[s] ZthJC[K/W] 10-5 10-4 10-3 10-2 10-1 100 101 10-2 10-1 100 101 0.5 0.2 0.1 0.05 0.02 0.01 single pulse ZthJC=f(tp);parameter:D=tp/T

OptiMOSTM3Power-Transistor,100V IPA045N10N3G Rev.2.4,2016-01-22Final Data Sheet Diagram5:Typ.outputcharacteristics VDS[V] ID[A] 100 150 200 250 6 V 7.5 V 10 V 5.5 V 5 V 4.5 V ID=f(VDS);Tj=25°C;parameter:VGS Diagram6:Typ.drain-sourceonresistance ID[A] RDS(on)[mΩ ] 100 4.5 V 5 V 6 V 7.5 V 10 V RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics VGS[V] ID[A] 100 150 200 175 °C 25 °C ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Diagram8:Typ.forwardtransconductance ID[A] gfs[S] 100 120 160 gfs=f(ID);Tj=25°C

OptiMOSTM3Power-Transistor,100V IPA045N10N3G Rev.2.4,2016-01-22Final Data Sheet Diagram9:Drain-sourceon-stateresistance Tj[°C] RDS(on)[mΩ ] -60 -20 100 140 180 98 % typ RDS(on)=f(Tj);ID=64A;VGS=10V Diagram10:Typ.gatethresholdvoltage Tj[°C] VGS(th)[V] -60 -20 100 140 180 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 1500 µA 150 µA VGS(th)=f(Tj);VGS=VDS;parameter:ID Diagram11:Typ.capacitances VDS[V] C[pF] 101 102 103 104 Ciss Coss Crss C=f(VDS);VGS=0V;f=1MHz Diagram12:Forwardcharacteristicsofreversediode VSD[V] IF[A] 0.0 0.5 1.0 1.5 2.0 100 101 102 103 25 °C 175 °C 25 °C, 98% 175 °C, 98% IF=f(VSD);parameter:Tj

OptiMOSTM3Power-Transistor,100V IPA045N10N3G Rev.2.4,2016-01-22Final Data Sheet Diagram13:Avalanchecharacteristics tAV[µs] IAS[A] 100 101 102 103 100 101 102 25 °C 100 °C 150 °C IAS=f(tAV);RGS=25Ω ;parameter:Tj(start) Diagram14:Typ.gatecharge Qgate[nC] VGS[V] 100 80 V 50 V 20 V VGS=f(Qgate);ID=64Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Tj[°C] VBR(DSS)[V] -60 -20 100 140 180 100 105 110 VBR(DSS)=f(Tj);ID=1mA Gate charge waveforms

OptiMOSTM3Power-Transistor,100V IPA045N10N3G Rev.2.4,2016-01-22Final Data Sheet 5PackageOutlines Figure1OutlinePG-TO220-FP,dimensionsinmm/inches

OptiMOSTM3Power-Transistor,100V IPA045N10N3G Rev.2.4,2016-01-22Final Data Sheet RevisionHistory IPA045N10N3 G Revision:2016-01-22,Rev.2.4 Previous Revision Revision Date Subjects (major changes since last revision) 2.4 2016-01-22 Insert RthJA TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2015InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.