IP1M10 SEME-LAB | Alldatasheet

Document overview

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Technical content

FEATURES

  • 200mA Continuous output current per bridge (100mA for IP1Mxx, IP2Mxx)
  • Internal output clamp diodes
  • Hysteretic logic inputs for noise immunity
  • Thermal shutdown protection
  • Peak current limit protection
  • Crossover current blanking
  • Separate +5V logic supply for minimum power dissipation (1M10 series only)
  • Separate +7V to +36V logic supply (1M12 series only) VSS Logic Supply Voltage 1M10 Series 1M12 Series VC Driver Supply Voltage Logic Inputs Output Current Peak Output Current P D Power Dissipation T A = 25°C Derate above 50°C PD Power Dissipation T C = 25°C Derate above 25°C TJ Operating Junction Temperature TSTG Storage Temperature Range +7V +40V +40V -0.3 to +40V ±250mA Internally Limited 10mW/°C 16mW/°C See Ordering Information –65 to +150°C ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) TOP VIEW J Package – 14 Pin Ceramic DIP N Package – 14 Pin Plastic DIP D Package – 14 Pin Plastic (150) SOIC OA+V CAV SSV PWM B DIR B OB+V CBV OB–V EBV GND DIR A PWM A EAV OA–V Part J–Pack N–Pack D–14 Temp. Number 14 Pin 14 Pin 14 Pin Range IP1M10 ✔ -55 to +125°C IP2M10 ✔✔✔ -40 to +85°C IP3M10 ✔✔✔ 0 to +70°C IP1M12 ✔ -55 to +125°C IP2M12 ✔✔✔ -40 to +85°C IP3M12 ✔✔✔ 0 to +70°C Order Information Note: To order, add the package identifier to the part number. eg. IP1M10J IP2M10D–14 IP3M12N

A 11DIR A

5 DIR

B CBV 25Ω 25Ω –VOA OA+V OB+V OB–V EAV CAV 2 3 SSV

4 PWM

B GND EBV VSS Logic Supply Voltage 1M10 Series 1M12 Series VC Driver Supply Voltage Logic Inputs Output Current, DC 1Mxx / 2Mxx Series 3Mxx Series Peak Output Current 1Mxx / 2Mxx Series 3Mxx Series T AMB Operating Ambient Temperature Range 1Mxx Series 2Mxx Series 3Mxx Series +4.75 to +5.25V +7 to +36V +4.75 to +36V 0 to +36V ±100mA ±200mA ±125mA ±250mA -55 to +125°C -40 to +85°C 0 to +70°C RECOMMENDED OPERA TING CONDITIONS BLOCK DIA GRAM

DESCRIPTION

The IP1M10 and IP1M12 series each contain two full H-bridge pow er drivers capable of delivering 200 mA continuous output current per channel (100mA for 1Mxx / 2Mxx). Each bridge may be run from its own supply voltage of up to 36V and is controlled by 2 high voltage protected logic level inputs with internal hysteresis for noise immunity. Protection features include thermal shutdown, peak current limiting, crossover current blanking, and internal output clamp diodes. Logic supply current is provided by a separate pin so that standby pow er dissipation may be minimised. The IP1M10 series requires a +5V logic supply while the IP1M12 series requires a logic supply voltage of +7V or greater, and is typically used in single supply applications. The IP1M10 and IP1M12 are available in a 14 lead ceramic DIP while the IP2M10, IP2M12, IP3M10, IP3M12 are avail- able in the 14 lead ceramic DIP, 14 lead plastic DIP, and 14 lead plastic SOIC packages. INPUTS OUTPUTS DIR PWM +VO -VO LOW LOW HIGH HIGH LOW HIGH LOW HIGH LOW HIGH HIGH HIGH HIGH LOW * Z = High Impedance.

Logic Supply Voltage (Pin 3) Logic Supply Voltage (Pin 3) Quiescent Bridge Current(Pin 2 or 6) PWM Input Threshold (Pins 4 and 12) PWM Input Current (Pins 4 and 12) DIR Input Threshold (Pins 5 and 11) DIR Input Current (Pins 5 and 11) Total Saturation Voltage VSAT(SINK) + VSAT(SOURCE) Diode Forward Voltage Output Leakage Current (Pins 1, 7, 8 and 14) VSS = +5.25V ILOADS = 0 VSS = +5.25V ILOADS = 100mA VSS = +5.25V ILOADS = 200mA VSS = +36V ILOADS = 0 VSS = +36V ILOADS = 100mA VSS = +20V ILOADS = 200mA ILOAD = 0 VIN = 0 VIN = 36V VIN = 0 VIN = 36V ILOAD = 100mA ILOAD = 200mA 3M10 / 3M12 Only IDIODE = 100mA IDIODE = 200mA VO = 0 VC = 36V VO = VC = 36V 5 12 8 20 12 28 8 18 1 25 15 32 2.5 8 0.8 1.5 2 1.2 2.5 3 0.4 1 -20 -100 0.1 ±10 0.8 1.5 2 1.2 2.3 3 0.2 0.8 -20 -100 0.1 ±10 1.8 2.25 2.1 2.7 1.1 1.4 1.2 1.6 1 100 1 100 Parameter Test Conditions Min. Typ. Max. Units ELECTRICAL CHARA CTERISTICS (Over Full Operating Temperature Range) mA mA V µA V µA V V µA 1M10 Series 1M12 Series Falling Rising Hysterisis Low High Falling Rising Hysterisis Low High Low High Sink Turn-On Delay Sink Current Rise Time Sink Turn-Off Delay Sink Current Fall Time Source Turn-On Delay Source Rise Time Source Turn-Off Delay Source Fall Time Sink to Source Deadtime Source to Sink Deadtime Δt: V i= Vi(TH)to VO = VS /2 Δt: IO = (0.1 to 0.9) ILOAD Δt: Vi= Vi(TH)to VO = VS /2 Δt: IO = (0.9 to 0.1) ILOAD Δt: Vi= Vi(TH)to VO = VS /2 Δt: IO = (0.1 to 0.9) ILOAD Δt: Vi= Vi(TH)to VO = VS /2 Δt: IO = (0.9 to 0.1) ILOAD 1250 200 300 200 800 400 1000 500 500 250 Parameter Test Conditions Min. Typ. Max. Units SWITCHING CHARA CTERISTICS @ T AMB = 25°C ns ns ns

TYPICAL PERFORMANCE CHARA CTERISTICS — ERR OR AMPLIFIER Output State vs DIR Input Voltage Output State vs PWM Input Voltage Diode Forward Voltage vs Ambient Temperature Total Saturation Voltage vs Ambient Temperature Peak Output Current vs Ambient Temperature Logic Supply Current vs Ambient Temperature