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Sony has developed the approx. 2.13M effective pixel back- illuminated CMOS image sensors IMX290LQR and IMX291LQR with improved sensitivity in the visible-light and near infrared light regions for industrial applications. A new 2.9 μm-square unit pixel has been developed that combines a back-illuminated structure with technology for improving near infrared sensitivity to further enhance picture quality at low illumination while at the same time realizing Full HD cameras for industrial applications. This realizes two or Diagonal 6.46 mm (Type 1/2.8) Square Pixel Array Color CMOS Image Sensor Back-Illuminated CMOS image Sensors with Improved Visible Light and Near Infrared Sensitivity that Support 1080p Back-Illuminated Structure + Improved Sensitivity in the Near Infrared Light Region WDR Function Versatile interface more times the sensitivity in the visible-light region and three or more times the sensitivity in the near infrared light region than that of the existing Sony product (IMX236LQJ)* 1. In addition, two types of WDR (Wide Dynamic Range) technology are also provided to further improve imaging performance. The new lineup includes the two types of the IMX290LQR, which has the DOL (Digital Overlap) -WDR function and the IMX291LQR, which does not have the DOL-WDR function. *1 See the New Product Information released in September 2013. Good sensitivity characteristics at low illumination and in the near infrared light region are a required performance of cameras for industrial applications. These new image sensors use a back-illuminated structure and also have an expanded photodi- ode area, which simultaneously improve sensitivity in both light regions compared to the existing front-illuminated structure. In addition, the new image sensors realize improved sensitivity characteristics two or more times in the visible-light region and three or more times in the near infrared light region (850 nm) compared to the existing Sony product (IMX236LQJ) with the same pixel size and increased sensitivity in the near infrared light region (Photograph 2). The IMX290LQR supports both multiple exposure and DOL- type WDR functions. (The IMX291LQR supports only the multiple exposure-type WDR function.) The multiple exposure-type WDR function outputs one set of two or four frames with different exposure times. In this case, the gain can also be set separately for each frame in addition to the exposure time. The DOL-type WDR function outputs the data for up to three frames with different storage times line by line. By performing special signal processing with an ISP (Image Signal Proces- sor) or other device at the image sensor rear-end, this enables improvement of picture quality under low illumination compared to the multiple exposure-type WDR function. The IMX290LQR and IMX291LQR are equipped with three different types of output interface (low-voltage LVDS serial, MIPI CSI-2, CMOS parallel) to meet diverse needs. The low-voltage LVDS serial interface has a maximum output data rate of 445.5 Mbps/ch and the number of output channels can be selected from 2ch, 4ch or 8ch. The MIPI CSI-2 interface has a maximum output data rate of 891 Mbps/lane and the number of output channels can be selected from 2 lanes or 4 lanes. The CMOS parallel interface has a maximum output data rate of 74.25 Mpixels/s. IMX290LQR, IMX291LQRIMX290LQR, IMX291LQR ˙Back-illuminated structure with 2.9 μm-square unit pixel ˙High sensitivity characteristics (two or more times that of the existing product) ˙ Improved sensitivity in the near infrared light region (three or more times that of the existing product) ˙Supports WDR (multiple exposure WDR, DOL-WDR) ˙Versatile interface (CMOS parallel, low-voltage LVDS serial, MIPI CSI-2) * Exmor R is a trademark of Sony Corporation. The Exmor R is a Sony's CMOS image sensor with significantly enhanced imaging characteristics including sensitivity and low noise by changing fundamental structure of ExmorTM pixel adopted column parallel A/D converter to back-illuminated type. *STARVIS is a trademark of Sony Corporation. The STARVIS is back-illuminated pixel technology used in CMOS image sensors for surveillance camera applications. It features a sensitivity of 2000 mV or more per 1 μm 2 (color product, when imaging with a 706 cd/m2 light source, F5.6 in 1 s accumulation equivalent), and realizes high picture quality in the visible-light and near infrared light regions.

*Sony reserves the right to change products and specifications without prior notice. ʻTable 1ʼ Device Structure ʻTable 2ʼ Image Sensor Characteristics Item Item Value Remarks IMX290LQR / IMX291LQR ʻPhotograph 1ʼIMX290LQR Sample Image Output Image size Number of effective pixels Unit cell size Optical blacks Horizontal Vertical Input drive frequency Package Supply voltage VDD (Typ.) Sensitivity (F5.6) Saturation signal Typ. Min. 1300 mV 914 mV 1/30s accumulation Tj = 60 °C Diagonal 6.46 mm (Type 1 / 2.8) (Full HD mode) Diagonal 4.31 mm (Type 1 / 4.2) (HD720p mode) 1945 (H) × 1097 (V) approx. 2.13M pixels 1305 (H) × 729 (V) approx. 0.95M pixels 2.9 μm (H) × 2.9 μm (V) Front: 0 pixels, rear: 0 pixels Front:10 pixels, rear: 0 pixels 74.25 MHz / 37.125 MHz 110-pin LGA 2.9 V / 1.8 V / 1.2 V Condition1: 0.08 lx F1.4 (Full HD image, 30 frames/s) Condition: 400 lx F1.4 (Full HD image, 60 frames/s) Condition 2: 0 lx (850 nm IR) F1.4 (Full HD image, 30 frames/s) ʻTable 3ʼ Basic Drive Mode Drive mode Interface Frame rate (Max.) Bit rate (Max.)ADC HD720p Low voltage LVDS serial 8 ch 10 bit 120 frame/s 445.5 Mbps/ch

222.75 Mbps/ch

891 Mbps/lane

74.25 Mpixel/s

445.5 Mbps/lane

594 Mbps/ch

297 Mbps/ch

594 Mbps/lane

297 Mbps/lane

CSI-2ɹ4 lane CSI-2ɹ4 lane CSI-2ɹ4 lane CMOS parallel Low voltage LVDS serial 4 ch Low voltage LVDS serial 4 ch CSI-2ɹ4 lane CMOS parallel Q Full HD 1080p IMX290LQR (Internal gain 0 dB) Existing IMX236LQJ Internal gain 48 dB IMX290LQR Internal gain 63 dB Existing IMX236LQJ Internal gain 0 dB IMX290LQR Internal gain 0 dB ʻPhotograph 2ʼComparisons with the Existing Sony Product