IMCQ120R007M2H

IMCQ120R007M2H INFINEON | Alldatasheet

Document overview

• Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
• PDF pages: 17

Technical content

Features

• V DSS = 1200 V at Tvj = 25°C
• I DDC = 181 A at TC = 100°C
• R DS(on) = 7.5 mΩ at VGS = 18 V, Tvj = 25°C
• Very low switching losses
• Overload operation up to T vj = 200°C
• Short circuit withstand time 2 µs
• Benchmark gate threshold voltage, V GS(th) = 4.2 V
• Robust against parasitic turn on, 0 V turn-off gate voltage can be applied
• Robust body diode for hard commutation
• .XT interconnection technology for best-in-class thermal performance
• Suitable Infineon gate drivers can be found under https://www.infineon.com/gdfinder Potential applications
• Solid-state circuit breaker / Solid-state relay
• EV Charging
• Online UPS / Industrial UPS
• String inverter
• General purpose drives (GPD)
• CAV
• Servo drives Product validation
• Qualified for industrial applications according to the relevant tests of JEDEC47/20/22

Description

Pin definition:

• Pin 1 – Gate
• Pin 2 – Kelvin sense contact
• Pin 3-11 – Source
• Pin 12-22, Tab – Drain Note: the source and sense pins are not exchangeable, their exchange might lead to malfunction Type Package Marking IMCQ120R007M2H PG-HDSOP-22-U03 12M2H007 IMCQ120R007M2H CoolSiC™ 1200 V SiC MOSFET G2 Datasheet Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.00 www.infineon.com 2024-12-12

CoolSiC™ 1200 V SiC MOSFET G2 Table of contents Datasheet 2 Revision 1.00 2024-12-12

1 Package

Table 1 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Storage temperature Tstg -55 150 °C Soldering temperature Tsold reflow soldering (MSL1 according to JEDEC J-STD-020) 260 °C Thermal resistance, junction-ambient Rth(j-a) 62 K/W MOSFET/body diode thermal resistance, junction-case Rth(j-c) 0.1 0.13 K/W

2 MOSFET

Table 2 Maximum rated values Parameter Symbol Note or test condition Values Unit Drain-source voltage VDSS Tvj ≥ 25 °C 1200 V Continuous DC drain current for Rth(j-c,max), limited by Tvj(max) IDDC VGS = 18 V Tc = 25 °C 257 A Tc = 100 °C 181 Peak drain current, tp limited by Tvj(max)1) IDM VGS = 18 V 543 A Gate-source voltage, max. transient voltage2) Gate-source voltage, max. static voltage VGS -7...23 V Avalanche energy, single pulse EAS ID = 93 A, VDD = 50 V, L = 0.3 mH 1163 mJ Avalanche energy, repetitive EAR ID = 93 A, VDD = 50 V, L = 1.4 µH 5.82 mJ Short-circuit withstand time tSC VDD ≤ 800 V, VDS,peak < 1200 V, VGS(on) = 15 V, Tvj(start) = 25 °C 2 µs Power dissipation, limited by Tvj(max) Ptot Tc = 25 °C 1172 W Tc = 100 °C 586 1) verified by design. 2) Important note: The selection of positive and negative gate-source voltages impacts the long-term behavior of the device. The design guidelines described in Application Note AN2018-09 must be considered to ensure sound operation of the device over the planned lifetime. IMCQ120R007M2H CoolSiC™ 1200 V SiC MOSFET G2 Datasheet 3 Revision 1.00 2024-12-12

Table 3 Recommended values Parameter Symbol Note or test condition Values Unit Recommended turn-on gate voltage VGS(on) 15...18 V Recommended turn-off gate voltage VGS(off) -5...0 V Table 4 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Drain-source on-state resistance RDS(on) ID = 93 A Tvj = 25 °C, VGS(on) = 18 V 7.5 mΩ Tvj = 150 °C, VGS(on) = 18 V 15.3 20 Tvj = 175 °C, VGS(on) = 18 V 17.7 Tvj = 25 °C, VGS(on) = 15 V 9.3 Gate-source threshold voltage VGS(th) ID = 29.1 mA, VDS = VGS (tested after 1 ms pulse at VGS = 20 V) Tvj = 25 °C 3.5 4.2 5.1 V Tvj = 175 °C 3.2 Zero gate-voltage drain current IDSS VDS = 1200 V, VGS = 0 V Tvj = 25 °C 800 µA Tvj = 175 °C 13.6 Gate leakage current IGSS VDS = 0 V VGS = 23 V 120 nA VGS = -10 V -120 Forward transconductance gfs ID = 93 A, VDS = 20 V 31.1 S Internal gate resistance RG,int f = 1 MHz, VAC = 25 mV 4.75 Ω Input capacitance Ciss VDS = 800 V, VGS = 0 V, f = 100 kHz, VAC = 25 mV 8.44 nF Output capacitance Coss VDS = 800 V, VGS = 0 V, f = 100 kHz, VAC = 25 mV 287 pF Reverse transfer capacitance Crss VDS = 800 V, VGS = 0 V, f = 100 kHz, VAC = 25 mV 25 pF Coss stored energy Eoss VDS = 0...800 V, VGS = 0 V, f = 100 kHz, VAC = 25 mV, Calculated based on Coss 121 µJ Output charge Qoss VDS = 0...800 V, VGS = 0 V, Calculated based on Coss 449 nC Effective output capacitance, energy related Co(er) VDS = 0...800 V, VGS = 0 V 378 pF Effective output capacitance, time related Co(tr) ID = constant, VDS = 0...800 V, VGS = 0 V 562 pF (table continues...) IMCQ120R007M2H CoolSiC™ 1200 V SiC MOSFET G2 Datasheet 4 Revision 1.00 2024-12-12

Table 4 (continued) Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Total gate charge QG VDD = 800 V, ID = 93 A, VGS = -2/18 V, turn-on pulse 197.2 nC Plateau gate charge QGS(pl) VDD = 800 V, ID = 93 A, VGS = -2/18 V, turn-on pulse 46.8 nC Gate-to-drain charge QGD VDD = 800 V, ID = 93 A, VGS = -2/18 V, turn-on pulse 47.1 nC Turn-on delay time td(on) VDD = 800 V, ID = 93 A, VGS = 0/18 V, RGS(on) = 2.3 Ω, RGS(off) = 2.3 Ω, Lσ = 15 nH, diode: body diode at VGS = 0 V Tvj = 25 °C 30 ns Tvj = 175 °C 23 Rise time tr VDD = 800 V, ID = 93 A, VGS = 0/18 V, RGS(on) = 2.3 Ω, RGS(off) = 2.3 Ω, Lσ = 15 nH, diode: body diode at VGS = 0 V Tvj = 25 °C 18.5 ns Tvj = 175 °C 16.4 Turn-off delay time td(off) VDD = 800 V, ID = 93 A, VGS = 0/18 V, RGS(on) = 2.3 Ω, RGS(off) = 2.3 Ω, Lσ = 15 nH, diode: body diode at VGS = 0 V Tvj = 25 °C 63.9 ns Tvj = 175 °C 74.8 Fall time tf VDD = 800 V, ID = 93 A, VGS = 0/18 V, RGS(on) = 2.3 Ω, RGS(off) = 2.3 Ω, Lσ = 15 nH, diode: body diode at VGS = 0 V Tvj = 25 °C 27.5 ns Tvj = 175 °C 32.4 Turn-on energy Eon VDD = 800 V, ID = 93 A, VGS = 0/18 V, RGS(on) = 2.3 Ω, RGS(off) = 2.3 Ω, Lσ = 15 nH, diode: body diode at VGS = 0 V Tvj = 25 °C 1670 µJ Tvj = 175 °C 2310 Turn-off energy Eoff VDD = 800 V, ID = 93 A, VGS = 0/18 V, RGS(on) = 2.3 Ω, RGS(off) = 2.3 Ω, Lσ = 15 nH, diode: body diode at VGS = 0 V Tvj = 25 °C 1290 µJ Tvj = 175 °C 1760 (table continues...) IMCQ120R007M2H CoolSiC™ 1200 V SiC MOSFET G2 Datasheet 5 Revision 1.00 2024-12-12

Table 4 (continued) Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Total switching energy1) Etot VDD = 800 V, ID = 93 A, VGS = 0/18 V, RGS(on) = 2.3 Ω, RGS(off) = 2.3 Ω, Lσ = 15 nH, diode: body diode at VGS = 0 V Tvj = 25 °C 3150 µJ Tvj = 175 °C 4630 Virtual junction temperature Tvj -55 175 °C Virtual junction temperature Tvj(over) overload, cumulative max. 100 h2) 200 °C 1) including Efr 2) up to 5000 cycles. Maximum ΔT limited to 100 K. Note: The chip technology was characterized up to 200 kV/µs. The measured dV/dt was limited by measurement test setup and package. Characteristics at Tvj = 25°C, unless otherwise specified.

3 Body diode (MOSFET)

Table 5 Maximum rated values Parameter Symbol Note or test condition Values Unit Drain-source voltage VDSS Tvj ≥ 25 °C 1200 V Peak reverse drain current, tp limited by Tvj(max) ISM VGS = 0 V 543 A Table 6 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Drain-source reverse voltage VSD ISD = 93 A, VGS = 0 V Tvj = 25 °C 4.2 5.5 V Tvj = 100 °C 4.1 Tvj = 175 °C 4 MOSFET forward recovery charge Qfr VDD = 800 V, ISD = 93 A, VGS = 0 V, -diSD/dt = 1000 A/µs, Qfr includes also QC Tvj = 25 °C 0.35 µC Tvj = 175 °C 1.43 MOSFET peak forward recovery current Ifrm VDD = 800 V, ISD = 93 A, VGS = 0 V, -diSD/dt = 1000 A/µs, Qfr includes also QC Tvj = 25 °C 15.4 A Tvj = 175 °C 22.1 (table continues...) IMCQ120R007M2H CoolSiC™ 1200 V SiC MOSFET G2 Datasheet 6 Revision 1.00 2024-12-12

Table 6 (continued) Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. MOSFET forward recovery energy Efr VDD = 800 V, ISD = 93 A, VGS = 0 V, -diSD/dt = 1000 A/µs, Qfr includes also QC Tvj = 25 °C 190 µJ Tvj = 175 °C 560 Virtual junction temperature Tvj -55 175 °C Virtual junction temperature Tvj(over) overload, cumulative max. 100 h1) 200 °C 1) up to 5000 cycles. Maximum ΔT limited to 100 K. IMCQ120R007M2H CoolSiC™ 1200 V SiC MOSFET G2 Datasheet 7 Revision 1.00 2024-12-12

4 Characteristics diagrams

Reverse bias safe operating area (RBSOA) IDS = f(VDS) Tvj ≤ 200 °C, VGS = 0/18 V, Tc = 25 °C Power dissipation as a function of case temperature Ptot = f(Tc) 0 200 400 600 800 1000 1200 1400 100 200 300 400 500 600 700 25 50 75 100 125 150 175 200 400 600 800 1000 1200 1400 1600 Maximum DC drain to source current as a function of case temperature limited by bond wire IDS = f(Tc) Maximum source to drain current as a function of case temperature limited by bond wire ISD = f(Tc) VGS = 0 V 0 25 50 75 100 125 150 175 120 150 180 210 240 270 300 0 25 50 75 100 125 150 175 120 150 180 210 240 270 IMCQ120R007M2H CoolSiC™ 1200 V SiC MOSFET G2 Datasheet 8 Revision 1.00 2024-12-12

Typical transfer characteristic IDS = f(VGS) VDS = 20 V, tp = 20 µs Typical gate-source threshold voltage as a function of junction temperature VGS(th) = f(Tvj) ID = 29.1 mA 0 2 4 6 8 10 12 14 16 18 20 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 -50 0 50 100 150 200 Typical output characteristic, VGS as a parameter IDS = f(VDS) Tvj = 25 °C, tp = 20 µs Typical output characteristic, VGS as a parameter IDS = f(VDS) Tvj = 175 °C, tp = 20 µs 0 2 4 6 8 10 12 14 16 18 20 100 200 300 400 500 600 700 800 900 0 2 4 6 8 10 12 14 16 18 20 100 200 300 400 500 600 700 800 900 IMCQ120R007M2H CoolSiC™ 1200 V SiC MOSFET G2 Datasheet 9 Revision 1.00 2024-12-12

Typical on-state resistance as a function of junction temperature RDS(on) = f(Tvj) ID = 93 A Typical gate charge VGS = f(QG) ID = 93 A, VDS = 800 V -50 -25 0 25 50 75 100 125 150 175 200 0 20 40 60 80 100 120 140 160 180 200 Typical capacitance as a function of drain-source voltage C = f(VDS) f = 100 kHz, VGS = 0 V Typical reverse drain voltage as a function of junction temperature VSD = f(Tvj) ISD = 93 A, VGS = 0 V 1 10 100 1000 100 1000 10000 -50 -25 0 25 50 75 100 125 150 175 200 IMCQ120R007M2H CoolSiC™ 1200 V SiC MOSFET G2 Datasheet 10 Revision 1.00 2024-12-12

Typical reverse drain current as a function of reverse drain voltage, VGS as a parameter ISD = f(VSD) Tvj = 25 °C, tp = 20 µs Typical reverse drain current as a function of reverse drain voltage, VGS as a parameter ISD = f(VSD) Tvj = 175 °C, tp = 20 µs 0 1 2 3 4 5 6 100 125 150 175 200 225 250 0 1 2 3 4 5 6 100 125 150 175 200 225 250 Typical switching energy as a function of junction temperature, test circuit in Fig. F, 2nd device own body diode: VGS = 0 V E = f(Tvj) VGS = 0/18 V, ID = 93 A, RG,ext = 2.3 Ω, VDD = 800 V Typical switching energy as a function of drain current, test circuit in Fig. F, 2nd device own body diode: VGS = 0 V E = f(ID) VGS = 0/18 V, Tvj = 175 °C, RG,ext = 2.3 Ω, VDD = 800 V 25 50 75 100 125 150 175 200 250 500 750 1000 1250 1500 1750 2000 2250 2500 10 30 50 70 90 110 130 150 170 190 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 5500 IMCQ120R007M2H CoolSiC™ 1200 V SiC MOSFET G2 Datasheet 11 Revision 1.00 2024-12-12

Typical switching energy as a function of gate resistance, test circuit in Fig. F, 2nd device own body diode: VGS = 0 V E = f(RG,ext) VGS = 0/18 V, ID = 93 A, Tvj = 175 °C, VDD = 800 V Typical switching times as a function of gate resistance, test circuit in Fig. F, 2nd device own body diode: VGS = 0 V t = f(RG,ext) VGS = 0/18 V, ID = 93 A, Tvj = 175 °C, VDD = 800 V 0 5 10 15 20 25 30 35 40 45 50 2000 4000 6000 8000 10000 12000 14000 16000 0 5 10 15 20 25 30 35 40 45 50 100 150 200 250 300 350 400 450 500 550 600 Typical reverse recovery charge as a function of reverse drain current slope, test circuit in Fig. F, 2nd device own body diode: VGS = 0 V Qfr = f(-diSD/dt ) VGS = 0 V, ISD = 93 A, VDD = 800 V Typical reverse recovery current as a function of reverse drain current slope, test circuit in Fig. F, 2nd device own body diode: VGS = 0 V Ifrm = f(-diSD/dt ) VGS = 0/18 V, ISD = 93 A, VDD = 800 V 1000 2500 4000 5500 7000 8500 10000 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 500 1500 2500 3500 4500 5500 6500 IMCQ120R007M2H CoolSiC™ 1200 V SiC MOSFET G2 Datasheet 12 Revision 1.00 2024-12-12

Typical switching energy as a function of dead time / blanking time, test circuit in Fig. F, 2nd device own body diode: VGS = 0 V E = f(tdead) VGS = 0/18 V, ID = 93 A, Tvj = 175 °C, RG,ext = 2.3 Ω VDD = 800 V Max. transient thermal impedance (MOSFET/diode) Zth(j-c),max = f(tp) D = tp/T 100 120 1E-6 1E-5 0.0001 0.001 0.01 0.1 1 0.001 0.01 0.1 IMCQ120R007M2H CoolSiC™ 1200 V SiC MOSFET G2 Datasheet 13 Revision 1.00 2024-12-12

5 Package outlines

DIMENSIONSMIN.MAX.MILLIMETERSPG-HDSOP-22-U03PACKAGE - GROUPNUMBER: A2b c e AA10.90 1.14 15.30 0.460.500.700.58 15.509.83 2.250.002.350.15 A30.50 DIMENSIONSMIN.MAX.MILLIMETERSE3E4E5E6E7E8E9 Figure 1 IMCQ120R007M2H CoolSiC™ 1200 V SiC MOSFET G2 Datasheet 14 Revision 1.00 2024-12-12

6 Testing conditions

Figure A. Definition of switching times Figure C. Definition of switching losses Figure E. Thermal equivalent circuit ID(t) t ID(t) 10% ID t VDS(t)VDS(t) t VDS(t) t t t1 1 t t2 2 t t3 3 t t4 4 10% VDS E Eon on = = t3 t3ʃ ʃt4 t4V VDS DS* *I ID D*d *dt t E Eof off f = = t1 t1ʃ ʃt2 t2V VDS DS* *I ID D*d *dt t 10% VDS r2r1 M =TC Tj(t) p(t) τ1/r1 τ2/r2 τn/rn r2 rn r1 M =TC Tj(t) p(t) τ1/r1 τ2/r2 τn/rn ton 90% td(on) tr 10%10%VGSVGS VDSVDS td(off)td(off) tftf tofftoffton 90% td(on) tr 10%VGS VDS td(off) tf toff I,V t tata tbtb QbQa I,V t VSD ISD Ifrm tfr ta tb diSD/dt 10% Ifrm tfr = ta + tb Qfr = Qa + Qb QbQa VDS t, Q Q QG QGS(pl) QQGDGD Figure B. Definition of body diode switching characteristics V VGS GS, ,V VDS DS VGS(on) VDS t, Q Q VDD ½Lσ ½Lσ RG DUT Cσ L second device VGS(off) VDD ½Lσ ½Lσ RG DUT Cσ L second device VGS(off) Figure D. Definition of QGD Figure F. Dynamic test circuit Parasitic inductance Lσ, Parasitic capacitor Cσ, 10% ID Figure 2 IMCQ120R007M2H CoolSiC™ 1200 V SiC MOSFET G2 Datasheet 15 Revision 1.00 2024-12-12

Revision history

Document revision Date of release Description of changes 0.10 2024-05-15 Target datasheet 0.20 2024-11-20 Preliminary datasheet 1.00 2024-12-12 Final datasheet IMCQ120R007M2H CoolSiC™ 1200 V SiC MOSFET G2 Datasheet 16 Revision 1.00 2024-12-12

All referenced product or service names and trademarks are the property of their respective owners. Edition 2024-12-12 Published by Infineon Technologies AG

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© 2024 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-ABI186-003 Important notice The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. Warnings Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.