IMBG40R011M2H INFINEON | Alldatasheet
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Features
Fully qualified according to JEDEC for Industrial Applications Table 1 Key Performance Parameters Parameter Value Unit V 400 V R 11.3 mΩ I 133 A Q 138 nC E 9.9 μJ Q 85 nC PG‑TO263‑7 Type/Ordering Code Package Marking Related Links IMBG40R011M2H PG‑TO263‑7 40R011M2 ‑ Ideal for high frequency switching and synchronous rectification• Commutation robust fast body diode with low Q• fr Low dependency on temperatureR• DS(on) Benchmark gate threshold voltage, = 4.5 VV• GS(th) Recommended gate driving voltage 0 V to 18 V• .XT interconnection technology for best‑in‑class thermal performance• 100% avalanche tested• SMPS• Solar PV inverters• Energy storage, UPS and battery formation• Class‑D audio• Motor drives• DS DS(on),typ D oss oss G Public IMBG40R011M2H Final datasheet 1 2 3 4 5 6 tab Drain Tab Gate Pin 1 Power Source Pin 3-7 Driver Source Pin 2 *1: Internal body diode
400V CoolSiC™ G2 MOSFET IMBG40R011M2H Public Datasheet 2 Revision 2.0 https://www.infineon.com 2024‑04‑26 Table of Contents
400V CoolSiC™ G2 MOSFET IMBG40R011M2H Public Datasheet 3 Revision 2.0 https://www.infineon.com 2024‑04‑26
1 Maximum ratings
at =25 °C, unless otherwise specifiedT Table 2 Maximum ratings Parameter Symbol Values Unit Note/ Test Condition Min. Typ. Max. Continuous drain current 1) I ‑ ‑ 133 101 13.4 A V =18 V, =25 °C T =18 V, =100 °C V T Pulsed drain current 3) I ‑ ‑ 399 A T =25 °C Avalanche energy, single pulse 4) E ‑ ‑ 220 mJ I =37.1 A, =25 ΩR Avalanche energy, repetitive E ‑ ‑ 1.1 mJ I =37.1 A, =25 ΩR Gate source voltage (static) V ‑7 ‑ 23 V ‑ Gate source voltage (transient) V ‑10 ‑ 25 V t ≤500 ns, duty cycle ≤ 1% Power dissipation P ‑ ‑ 429 3.8 W T =25 °C Storage temperature T ‑55 ‑ 150 °C ‑ Operating junction temperature T ‑55 ‑ 175 °C ‑ Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature at 25°C. 1) For higher case temperature please refer to Diagram 2. De‑rating will be required based on the actual environmental conditions. Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 μm thick) copper area for drain connection. PCB 2) 2 is vertical in still air. See Diagram 3 for more detailed information.3) See Diagram 19 for more detailed information.4) A D GS C GS C GS A THJA D,pulse C AS D GS AR D GS GS,DC GS,AC pulse tot C A THJA stg j
400V CoolSiC™ G2 MOSFET IMBG40R011M2H Public Datasheet 4 Revision 2.0 https://www.infineon.com 2024‑04‑26
2 Thermal characteristics
Table 3 Thermal characteristics Parameter Symbol Values Unit Note/ Test Condition Min. Typ. Max. Thermal resistance, junction ‑ case R ‑ ‑ 0.35 °C/W ‑ Thermal resistance, junction ‑ ambient, 6 cm² cooling area 5) R ‑ ‑ 40 °C/W ‑ Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 μm thick) copper area for drain connection. PCB 5) 2 is vertical in still air.
3 Operating range
Min. Typ. Max. Recommended turn‑on voltage V ‑ 18 ‑ V ‑ Recommended turn‑off voltage V ‑ 0 ‑ V ‑ thJC thJA GS(on) GS(off)
400V CoolSiC™ G2 MOSFET IMBG40R011M2H Public Datasheet 5 Revision 2.0 https://www.infineon.com 2024‑04‑26
4 Electrical characteristics
at =25 °C, unless otherwise specifiedT Table 5 Static characteristics Parameter Symbol Values Unit Note/ Test Condition Min. Typ. Max. Drain‑source breakdown voltage V 400 ‑ ‑ V V =0 V, =1.3 mAI Gate threshold voltage 6) V 3.5 4.5 5.6 V V = , =13.3 mAV I Zero gate voltage drain current I ‑ 1 ‑ μA V =400 V, =0 V, =25 °C V T =400 V, =0 V, =175 °CV V T Gate‑source leakage current I ‑ 1 100 nA V =20 V, =0 VV Drain‑source on‑state resistance R ‑ 11.3 16.3 13.7 14.4 mΩ V =18 V, =37.1 A, =25 °C I T =18 V, =37.1 A, =175 °C V I T Gate resistance R ‑ 2.3 3.5 Ω ‑ Tested after 1ms pulse at = +20V.6) V Table 6 Dynamic characteristics Parameter Symbol Values Unit Note/ Test Condition Min. Typ. Max. Input capacitance C ‑ 2900 3770 pF V =0 V, =200 V, =1 MHzV f Output capacitance C ‑ 410 ‑ pF V =0 V, =200 V, =1 MHzV f Reverse transfer capacitance C ‑ 33 ‑ pF V =0 V, =200 V, =1 MHzV f Effective output capacitance, energy related 7) C ‑ 494 ‑ pF V =0 V, =0...200 VV Effective output capacitance, time related 8) C ‑ 690 ‑ pF I =constant, =0 V, =0...200 VV V =1.8 ΩR =1.8 ΩR =1.8 ΩR =1.8 ΩR is a fixed capacitance that gives the same stored energy as while is rising from 0 to 200 V.7) C C V is a fixed capacitance that gives the same charging time as while is rising from 0 to 200 V.8) C C V Refer to Table 9 for test setup.9) j (BR)DSS GS D GS(th) DS GS D DSS DS GS j DS GS j GSS GS DS DS(on) GS D j GS D j GS D j G GS iss GS DS oss GS DS rss GS DS o(er) GS DS o(tr) D GS DS d(on) DD GS D G,ext r DD GS D G,ext d(off) DD GS D G,ext f DD GS D G,ext o(er) oss DS o(tr) oss DS
400V CoolSiC™ G2 MOSFET IMBG40R011M2H Public Datasheet 6 Revision 2.0 https://www.infineon.com 2024‑04‑26 Table 7 Gate Charge Characteristics 10) Parameter Symbol Values Unit Note/ Test Condition Min. Typ. Max. Gate to source charge Q ‑ 23 ‑ nC V =200 V, =37.1 A, =0 to 18 VI V Gate to drain charge Q ‑ 17.5 ‑ nC V =200 V, =37.1 A, =0 to 18 VI V Gate charge total Q ‑ 85 ‑ nC V =200 V, =37.1 A, =0 to 18 VI V Gate charge total, sync. FET Q ‑ 79 ‑ nC V =0.1 V, =0 to 18 VV Output charge Q ‑ 138 ‑ nC V =200 V, =0 VV Output Energy E ‑ 9.9 ‑ μJ V =200 V, =0 VV As per JEP192, Guidelines for Gate Charge ( ) Test Method for SiC MOSFET.10) Q Table 8 Reverse diode characteristics Parameter Symbol Values Unit Note/ Test Condition Min. Typ. Max. Diode continuous forward current I ‑ ‑ 67 A T =25 °C Diode pulse current I ‑ ‑ 399 A T =25 °C, ≤250 nst Diode forward voltage V ‑ 3.5 4.3 V V =0 V, =37.1 A, =25 °CI T MOSFET forward recovery time t ‑ 18.2 12.8 ‑ ns d /d =1000 A/μs i t d /d =4000 A/μsi t MOSFET forward recovery charge 11) Q ‑ 86 220 ‑ nC d /d =1000 A/μs i t d /d =4000 A/μsi t includes . Refer to Table 10 for test setup.11) Q Q gs DD D GS gd DD D GS g DD D GS g(sync) DS GS oss DS GS oss DS GS G S C S,pulse C pulse SD GS S j fr R S S R S S fr R S S R S S fr oss
400V CoolSiC™ G2 MOSFET IMBG40R011M2H Public Datasheet 7 Revision 2.0 https://www.infineon.com 2024‑04‑26
5 Electrical characteristics diagrams
Diagram 1: Power dissipation Diagram 2: Drain current P =f( )T I =f( ); ≥18 VT V Diagram 3: Safe operating area Diagram 4: Safe operating area I =f( ); =25 °C; =0; parameter: V T D t I =f( ); =125 °C; =0; parameter: V T D t tot C D C GS D DS C p D DS C p 0 25 50 75 100 125 150 175 200 TC [°C] 100 200 300 400 500Ptot [W] 0 25 50 75 100 125 150 175 200 TC [°C] 100 125 150ID [A] 100 101 102 103 VDS [V] 10 2 10 1 100 101 102 103 ID [A] 1 µs 10 µs 100 µs 1 ms 10 ms DC 100 101 102 103 VDS [V] 10 2 10 1 100 101 102 103 ID [A] 1 µs 10 µs 100 µs 1 ms 10 ms DC
400V CoolSiC™ G2 MOSFET IMBG40R011M2H Public Datasheet 8 Revision 2.0 https://www.infineon.com 2024‑04‑26 Diagram 5: Typ. output characteristics Diagram 6: Typ. output characteristics I =f( ), =25 °C; parameter: V T V I =f( ), =175 °C; parameter: V T V Diagram 7: Typ. drain‑source on resistance Diagram 8: Typ. drain‑source on resistance R =f( ), =25 °C; parameter: I T V R =f( ), =175 °C; parameter: I T V D DS j GS D DS j GS DS(on) D j GS DS(on) D j GS 0 2 4 6 8 10 12 VDS [V] 100 200 300 400 500ID [A] 8 V 10 V 12 V 15 V
18 V20 V
VDS [V] 100 200 300 400 500ID [A] 8 V 10 V 12 V 15 V 18 V 20 V 0 50 100 150 200 250 300 ID [A] RDS(on) [m ]
10 V 12 V
ID [A] RDS(on) [m ]
400V CoolSiC™ G2 MOSFET IMBG40R011M2H Public Datasheet 9 Revision 2.0 https://www.infineon.com 2024‑04‑26 Diagram 9: Normalized drain‑source on resistance Diagram 10: Typ. gate threshold voltage R =f( ), =37.1 A, =18 VT I V V =f( ), = , =13.3 mAT V V I Diagram 11: Typ. transfer characteristics Diagram 12: Max. transient thermal impedance I =f( ), | |>2| | ; parameter: V V I R T Z =f( ); parameter: = /t D t T DS(on) j D GS GS(th j GS DS D D GS DS D DS(on)max j thJC p p -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj [°C] 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 RDS(on) (normalized to 25 °C) -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj [°C] VGS(th) [V] 0 2 4 6 8 10 12 14 16 18 20 VGS [V] 100 200 300 400 500 600 700 800ID [A] 25 °C 175 °C 10 6 10 5 10 4 10 3 10 2 10 1 100 tp [s] 10 3 10 2 10 1 100 101 ZthJC [K/W] single pulse 0.01 0.02 0.05 0.1 0.2 0.5
400V CoolSiC™ G2 MOSFET IMBG40R011M2H Public Datasheet 10 Revision 2.0 https://www.infineon.com 2024‑04‑26 Diagram 13: Reverse output characteristics Diagram 14: Reverse output characteristics I =f( ), =0 V; parameter: V V T I =f( ), =18 V; parameter: V V T Diagram 15: Typ. capacitances Diagram 16: Typ. gate charge C=f( ); =0 V; =1 MHzV V f V =f( ), =200 V, =37.1 A pulsed, =25 °CQ V I T F SD GS j F SD GS j DS GS GS gate DD D j 0 1 2 3 4 5 VSD [V] 100 120IS [A] 25 °C 175 °C VSD [V] 100 125 150 175 200IS [A] 25 °C 175 °C 0 50 100 150 200 250 300 350 400 VDS [V] 101 102 103 104 C [pF] Ciss Coss Crss 0 20 40 60 80 100 Qgate [nC] 20VGS [V]
400V CoolSiC™ G2 MOSFET IMBG40R011M2H Public Datasheet 11 Revision 2.0 https://www.infineon.com 2024‑04‑26 Diagram 17: Typ. output charge Diagram 18: Typ. output energy Q =f( ), =0 VV V E =f( ), =0 VV V Diagram 19: Avalanche characteristics Diagram 20: Min. drain‑source breakdown voltage I =f( ); =25 Ω; parameter: t R T V =f( ); =1.3 mAT I oss DS GS oss DS GS AS AV GS j,start BR(DSS) j D 0 50 100 150 200 250 300 350 400 VDS [V] 120 160 200 240Qoss [nC] 0 50 100 150 200 250 300 350 400 VDS [V] 35Eoss [µJ] 100 101 102 103 tAV [µs] 10 1 100 101 102 IAV [A] 25 °C 100 °C 150 °C -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj [°C] 400 401 402 403 404 VBR(DSS) [V]
400V CoolSiC™ G2 MOSFET IMBG40R011M2H Public Datasheet 12 Revision 2.0 https://www.infineon.com 2024‑04‑26 Diagram 21: Typ. turn‑on switching losses Diagram 22: Typ. turn‑off switching losses Diagram 23: Typ. turn‑on switching losses Diagram 24: Typ. turn‑off switching losses on g,ext DD G D off g,ext DD G D on g,ext DD G D off g,ext DD G D 0 10 20 30 40 50 RG, ext [ ] 100 200 300 400 500 600Eon [µJ] 11 A 28 A 56 A 0 10 20 30 40 50 RG, ext [ ] 100 200 300 400 500 600Eoff [µJ] 11 A 28 A 56 A 0 10 20 30 40 50 RG, ext [ ] 250 500 750 1000 1250Eon [µJ] 11 A 28 A 56 A 0 10 20 30 40 50 RG, ext [ ] 250 500 750 1000 1250Eoff [µJ] 11 A 28 A 56 A
400V CoolSiC™ G2 MOSFET IMBG40R011M2H Public Datasheet 13 Revision 2.0 https://www.infineon.com 2024‑04‑26
6 Test Circuits
Table 9 Switching times (CoolSiC) Table 10 Body diode characteristics (CoolSiC) Switching times test circuit for inductive load Switching times waveform VDS VGS td(on) td(off)tr ton tf toff 10% 90% VDS VGS RG VDD Test circuit for body diode characteristics Body diode recovery waveform RG1 RG2 IS VDS Qfr tfr Ifrm Ifrm Is dIs / dtVDD ISO VDD VDS IS
400V CoolSiC™ G2 MOSFET IMBG40R011M2H Public Datasheet 14 Revision 2.0 https://www.infineon.com 2024‑04‑26
7 Package Outlines
Figure 1 Outline PG‑TO263‑7, dimensions in mm DIMENSIONSMIN.MAX.b Dc E e AA1 1.27 9.050.400.50 9.807.30 DIMENSIONSMIN.MAX.MILLIMETERS c20.25
400V CoolSiC™ G2 MOSFET IMBG40R011M2H Public Datasheet 15 Revision 2.0 https://www.infineon.com 2024‑04‑26 IMBG40R011M2H Revision 2024‑04‑27, Rev. 2.0 Previous Revision Revision Date Subjects (major changes since last revision) 1.0 2024‑04‑26 Release of preliminary version 2.0 2024‑04‑27 Release of final Trademarks All referenced product or service names and trademarks are the property of their respective owners. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Published by Infineon Technologies AG
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