IMBG120R008M2H | DigiCamel IC Datasheet

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IMBG120R008M2H INFINEON | Alldatasheet

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Technical content

Features

V DSS = 1200 V at Tvj = 25°C
I DDC = 144 A at TC = 100°C
R DS(on) = 7.7 mΩ at VGS = 18 V, Tvj = 25°C
Very low switching losses
Overload operation up to T vj = 200°C
Short circuit withstand time 2 µs
Benchmark gate threshold voltage, V GS(th) = 4.2 V
Robust against parasitic turn on, 0 V turn-off gate voltage can be applied
Robust body diode for hard commutation
.XT interconnection technology for best-in-class thermal performance
Suitable Infineon gate drivers can be found under https://www.infineon.com/gdfinder Potential applications
EV-Charging
Online UPS/Industrial UPS
Solar power optimizer
String inverter
General purpose drives (GPD) Product validation
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22 Copyright © Infineon Technologies AG 2021. All rights reserved. 19 2021-10-27 restricted

Description

Pin definition:

Pin 1 - Gate
Pin 2 - Kelvin sense contact
Pin 3…7 - Source
Tab - Drain Note: the source and sense pins are not exchangeable, their exchange might lead to malfunction (only for 4pin, TO263-7L ) Type Package Marking IMBG120R008M2H PG-TO263-7-HV-ND5.8 12M2H008 IMBG120R008M2H CoolSiC™ 1200 V SiC MOSFET G2 Datasheet Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.10 www.infineon.com 2024-01-12

CoolSiC™ 1200 V SiC MOSFET G2 Table of contents Datasheet 2 Revision 1.10 2024-01-12

1 Package

Table 1 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Storage temperature Tstg -55 150 °C Soldering temperature Tsold reflow soldering (MSL1 according to JEDEC J-STA-020) 260 °C Thermal resistance, junction-ambient Rth(j-a) 62 K/W MOSFET/body diode thermal resistance, junction-case Rth(j-c) 0.14 0.19 K/W

2 MOSFET

Table 2 Maximum rated values Parameter Symbol Note or test condition Values Unit Drain-source voltage VDSS Tvj ≥ 25 °C 1200 V Continuous DC drain current for Rth(j-c,max), limited by Tvj(max) IDDC VGS = 18 V Tc = 25 °C 189 A Tc = 100 °C 144 Peak drain current, tp limited by Tvj(max) 1) IDM VGS = 18 V 432 A Gate-source voltage, max. transient voltage Gate-source voltage, max. static voltage VGS -7...20 V Avalanche energy, single pulse EAS ID = 89.9 A, VDD = 50 V, L = 0.3 mH 1129 mJ Avalanche energy, repetitive EAR ID = 89.9 A, VDD = 50 V, L = 1.4 mH 5.64 mJ Short-circuit withstand time tSC VDD ≤ 800 V, VDS,peak < 1200 V, VGS(on) = 15 V, Tvj(start) = 25 °C 2 µs Power dissipation, limited by Tvj(max) Ptot Tc = 25 °C 800 W Tc = 100 °C 400 1) verified by design. IMBG120R008M2H CoolSiC™ 1200 V SiC MOSFET G2 Datasheet 3 Revision 1.10 2024-01-12

Table 3 Recommended values Parameter Symbol Note or test condition Values Unit Recommended turn-on gate voltage VGS(on) 15...18 V Recommended turn-off gate voltage VGS(off) -5...0 V Table 4 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Drain-source on-state resistance RDS(on) ID = 89.9 A Tvj = 25 °C, VGS(on) = 18 V 7.7 mΩ Tvj = 150 °C, VGS(on) = 18 V 15.7 21 Tvj = 175 °C, VGS(on) = 18 V 18.3 Tvj = 25 °C, VGS(on) = 15 V 9.6 Gate-source threshold voltage VGS(th) ID = 28.3 mA, VDS = VGS (tested after 1 ms pulse at VGS = 20 V) Tvj = 25 °C 3.5 4.2 5.1 V Tvj = 175 °C 3.2 Zero gate-voltage drain current IDSS VDS = 1200 V, VGS = 0 V Tvj = 25 °C 780 µA Tvj = 175 °C 13.2 Gate leakage current IGSS VDS = 0 V VGS = 23 V 120 nA VGS = -10 V -120 Forward transconductance gfs ID = 89.9 A, VDS = 20 V 41.3 S Internal gate resistance RG,int f = 1 MHz, VAC = 25 mV 3 Ω Input capacitance Ciss VDD = 800 V, VGS = 0 V, f = 100 kHz, VAC = 25 mV 6380 pF Output capacitance Coss VDD = 800 V, VGS = 0 V, f = 100 kHz, VAC = 25 mV 279 pF Reverse transfer capacitance Crss VDD = 800 V, VGS = 0 V, f = 100 kHz, VAC = 25 mV 24 pF Coss stored energy Eoss VDD = 800 V, VGS = 0 V, f = 100 kHz, VAC = 25 mV 117 µJ Output charge Qoss Calculated by Coss(f)VDS @100 kHz 436 nC Effective output capacitance, energy related Co(er) VDD = 0...800 V, VGS = 0 V 365.6 pF Effective output capacitance, time related Co(tr) IC = constant, VDD = 0...800 V, VGS = 0 V 545 pF Total gate charge QG VDD = 800 V, ID = 89.9 A, VGS = -2/18 V, turn-on pulse 195 nC (table continues...) IMBG120R008M2H CoolSiC™ 1200 V SiC MOSFET G2 Datasheet 4 Revision 1.10 2024-01-12

Table 4 (continued) Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Plateau gate charge QGS(pl) VDD = 800 V, ID = 89.9 A, VGS = -2/18 V, turn-on pulse 41 nC Gate-to-drain charge QGD VDD = 800 V, ID = 89.9 A, VGS = -2/18 V, turn-on pulse 53 nC Turn-on delay time td(on) VDD = 800 V, ID = 89.9 A, VGS = 0/18 V, RGS(on) = 2.3 Ω, RGS(off) = 2.3 Ω, Lσ = 15 nH, diode: body diode at VGS = 0 V Tvj = 25 °C 16 ns Tvj = 175 °C 16 Rise time tr VDD = 800 V, ID = 89.9 A, VGS = 0/18 V, RGS(on) = 2.3 Ω, RGS(off) = 2.3 Ω, Lσ = 15 nH, diode: body diode at VGS = 0 V Tvj = 25 °C 25.6 ns Tvj = 175 °C 24.6 Turn-off delay time td(off) VDD = 800 V, ID = 89.9 A, VGS = 0/18 V, RGS(on) = 2.3 Ω, RGS(off) = 2.3 Ω, Lσ = 15 nH, diode: body diode at VGS = 0 V Tvj = 25 °C 31 ns Tvj = 175 °C 54.2 Fall time tf VDD = 800 V, ID = 89.9 A, VGS = 0/18 V, RGS(on) = 2.3 Ω, RGS(off) = 2.3 Ω, Lσ = 15 nH, diode: body diode at VGS = 0 V Tvj = 25 °C 20.9 ns Tvj = 175 °C 24.7 Turn-on energy Eon VDD = 800 V, ID = 89.9 A, VGS = 0/18 V, RGS(on) = 2.3 Ω, RGS(off) = 2.3 Ω, Lσ = 15 nH, diode: body diode at VGS = 0 V Tvj = 25 °C 1280 µJ Tvj = 175 °C 2220 Turn-off energy Eoff VDD = 800 V, ID = 89.9 A, VGS = 0/18 V, RGS(on) = 2.3 Ω, RGS(off) = 2.3 Ω, Lσ = 15 nH, diode: body diode at VGS = 0 V Tvj = 25 °C 810 µJ Tvj = 175 °C 990 (table continues...) IMBG120R008M2H CoolSiC™ 1200 V SiC MOSFET G2 Datasheet 5 Revision 1.10 2024-01-12

Table 4 (continued) Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Total switching energy1) Etot VDD = 800 V, ID = 89.9 A, VGS = 0/18 V, RGS(on) = 2.3 Ω, RGS(off) = 2.3 Ω, Lσ = 15 nH, diode: body diode at VGS = 0 V Tvj = 25 °C 2190 µJ Tvj = 175 °C 3490 Virtual junction temperature Tvj -55 175 °C Virtual junction temperature Tvj(over) overload, cumulative max. 100 h2) 200 °C 1) including Efr 2) up to 5000 cycles. Maximum ΔT limited to 100 K. Note: The chip technology was characterized up to 200 kV/µs. The measured dV/dt was limited by measurement test setup and package. Characteristics at Tvj = 25°C, unless otherwise specified.

3 Body diode (MOSFET)

Table 5 Maximum rated values Parameter Symbol Note or test condition Values Unit Drain-source voltage VDSS Tvj ≥ 25 °C 1200 V Peak reverse drain current, tp limited by Tvj(max) ISM VGS = 0 V 230 A Table 6 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Drain-source reverse voltage VSD ISD = 89.9 A, VGS = 0 V Tvj = 25 °C 4.2 5.5 V Tvj = 100 °C 4.11 Tvj = 175 °C 4.05 MOSFET forward recovery charge Qfr VDD = 800 V, ISD = 89.9 A, VGS = 0 V, diSD/dt = 1000 A/µs, Qfr includes also QC Tvj = 25 °C 0.85 µC Tvj = 175 °C 1.65 MOSFET peak forward recovery current Ifrm VDD = 800 V, ISD = 89.9 A, VGS = 0 V, diSD/dt = 1000 A/µs, Qfr includes also QC Tvj = 25 °C 14 A Tvj = 175 °C 22.3 (table continues...) IMBG120R008M2H CoolSiC™ 1200 V SiC MOSFET G2 Datasheet 6 Revision 1.10 2024-01-12

Table 6 (continued) Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. MOSFET forward recovery energy Efr VDD = 800 V, ISD = 89.9 A, VGS = 0 V, diSD/dt = 1000 A/µs, Qfr includes also QC Tvj = 25 °C 100 µJ Tvj = 175 °C 280 Virtual junction temperature Tvj -55 175 °C Virtual junction temperature Tvj(over) overload, cumulative max. 100 h1) 200 °C 1) up to 5000 cycles. Maximum ΔT limited to 100 K. IMBG120R008M2H CoolSiC™ 1200 V SiC MOSFET G2 Datasheet 7 Revision 1.10 2024-01-12

4 Characteristics diagrams

Reverse bias safe operating area (RBSOA) IDS = f(VDS) Tvj ≤ 200 °C, VGS = 0/18 V, Tc = 25 °C Power dissipation as a function of case temperature Ptot = f(Tc) 0 200 400 600 800 1000 1200 1400 100 150 200 250 300 350 400 450 500 25 50 75 100 125 150 175 100 200 300 400 500 600 700 800 900 1000 1100 Maximum DC drain to source current as a function of case temperature limited by bond wire IDS = f(Tc) Maximum source to drain current as a function of case temperature limited by bond wire ISD = f(Tc) VGS = 0 V 0 25 50 75 100 125 150 175 100 125 150 175 200 225 0 25 50 75 100 125 150 175 100 120 140 160 IMBG120R008M2H CoolSiC™ 1200 V SiC MOSFET G2 Datasheet 8 Revision 1.10 2024-01-12

Typical transfer characteristic IDS = f(VGS) VDS = 20 V, tp = 20 µs Typical gate-source threshold voltage as a function of junction temperature VGS(th) = f(Tvj) ID = 28.3 mA 0 2 4 6 8 10 12 14 16 18 20 100 200 300 400 500 600 700 800 -50 -25 0 25 50 75 100 125 150 175 200 Typical output characteristic, VGS as parameter IDS = f(VDS) Tvj = 25 °C, tp = 20 µs Typical output characteristic, VGS as parameter IDS = f(VDS) Tvj = 175 °C, tp = 20 µs 0 2 4 6 8 10 12 14 16 18 20 100 200 300 400 500 600 700 800 900 0 2 4 6 8 10 12 14 16 18 20 100 200 300 400 500 600 700 800 900 IMBG120R008M2H CoolSiC™ 1200 V SiC MOSFET G2 Datasheet 9 Revision 1.10 2024-01-12

Typical on-state resistance as a function of junction temperature RDS(on) = f(Tvj) ID = 89.9 A Typical gate charge VGS = f(QG) ID = 89.9 A, VDS = 800 V -50 -25 0 25 50 75 100 125 150 175 200 0.0 2.5 5.0 7.5 10.0 12.5 15.0 17.5 20.0 22.5 25.0 0 40 80 120 160 200 Typical capacitance as a function of drain-source voltage C = f(VDS) f = 100 kHz, VGS = 0 V Typical reverse drain voltage as function of junction temperature VSD = f(Tvj) ISD = 89.9 A, VGS = 0 V 1 10 100 1000 100 1000 10000 -50 -25 0 25 50 75 100 125 150 175 200 IMBG120R008M2H CoolSiC™ 1200 V SiC MOSFET G2 Datasheet 10 Revision 1.10 2024-01-12

Typical reverse drain current as function of reverse drain voltage, VGS as parameter ISD = f(VSD) Tvj = 25 °C, tp = 20 µs Typical reverse drain current as function of reverse drain voltage, VGS as parameter ISD = f(VSD) Tvj = 175 °C, tp = 20 µs 0 1 2 3 4 5 6 120 150 180 210 240 0 1 2 3 4 5 6 120 150 180 210 240 Typical switching energy as a function of junction temperature, test circuit in Fig. F, 2nd device own body diode: VGS = 0 V E = f(Tvj) VGS = 0/18 V, ID = 89.9 A, RG,ext = 2.3 Ω, VDD = 800 V Typical switching energy as a function of drain current, test circuit in Fig. F, 2nd device own body diode: VGS = 0 V E = f(ID) VGS = 0/18 V, Tvj = 175 °C, RG,ext = 2.3 Ω, VDD = 800 V 25 50 75 100 125 150 175 200 300 600 900 1200 1500 1800 2100 2400 0 20 40 60 80 100 120 140 160 180 500 1000 1500 2000 2500 3000 3500 4000 4500 IMBG120R008M2H CoolSiC™ 1200 V SiC MOSFET G2 Datasheet 11 Revision 1.10 2024-01-12

Typical switching energy as a function of gate resistance, test circuit in Fig. F, 2nd device own body diode: VGS = 0 V E = f(RG,ext) VGS = 0/18 V, ID = 89.9 A, Tvj = 175 °C, VDD = 800 V Typical switching times as a function of gate resistance, test circuit in Fig. F, 2nd device own body diode: VGS = 0 V t = f(RG,ext) VGS = 0/18 V, ID = 89.9 A, Tvj = 175 °C, VDD = 800 V 0 5 10 15 20 25 30 35 40 45 50 2000 4000 6000 8000 10000 12000 14000 0 5 10 15 20 25 30 35 40 45 50 120 180 240 300 360 420 480 540 Typical reverse recovery charge as a function of revere drain current slope, test circuit in Fig. F, 2nd device own body diode: VGS = 0 V Qfr = f(diSD/dt ) VGS = 0/18 V, ISD = 89.9 A, VDD = 800 V Typical reverse recovery current as a function of reverse drain current slope, test circuit in Fig. F, 2nd device own body diode: VGS = 0 V Ifrm = f(diSD/dt ) VGS = 0/18 V, ISD = 89.9 A, VDD = 800 V 1000 2000 3000 4000 5000 6000 7000 8000 9000 0.0 0.2 0.5 0.8 1.0 1.2 1.5 1.8 2.0 2.2 2.5 1000 3000 5000 7000 9000 11000 13000 100 120 140 IMBG120R008M2H CoolSiC™ 1200 V SiC MOSFET G2 Datasheet 12 Revision 1.10 2024-01-12

Typical switching energy as a function of dead time / blanking time, test circuit in Fig. F, 2nd device own body diode: VGS = -5 V E = f(tdead) VGS = 0/18 V, ID = 89.9 A, Tvj = 175 °C, RG,ext = 2.3 Ω VDD = 800 V Max. transient thermal impedance (MOSFET/diode) Zth(j-c),max = f(tp) D = tp/T 100 120 1E-6 1E-5 0.0001 0.001 0.01 0.1 1 0.01 0.1 IMBG120R008M2H CoolSiC™ 1200 V SiC MOSFET G2 Datasheet 13 Revision 1.10 2024-01-12

5 Package outlines

DIMENSIONS MIN. MAX. b D c E e L A 2.502.30 1.27 9.05 0.40 0.50 9.80 0.70 4.20 5.90 0.70 0.60 9.45 1.30 5.20 10.20 6.10 MILLIMETERS 4.30 0.00 4.50 0.10 b1 0.00 0.15 PG-TO263-7-U01 PACKAGE - GROUP NUMBER: c1 1.17 1.37 E1 9.36 9.56 E2 0.00 0.30 E3 8.40 8.60 H 15.00 L2 1.70 2.30 L3 2.70 P 0.35 0.55 R 2.03 2.23 S 1.40 1.60 THETA 0.00° 8.00° PG-TO263-7-HV-ND5.8 Figure 1 IMBG120R008M2H CoolSiC™ 1200 V SiC MOSFET G2 Datasheet 14 Revision 1.10 2024-01-12

6 Testing conditions

Figure A. Definition of switching times Figure C. Definition of switching losses Figure E. Thermal equivalent circuit ID(t) t ID(t) 10% ID t VDS(t)VDS(t) t VDS(t) t t t1 1 t t2 2 t t3 3 t t4 4 10% VDS E Eon on = = t3 t3ʃ ʃt4 t4V VDS DS* *I ID D*d *dt t E Eof off f = = t1 t1ʃ ʃt2 t2V VDS DS* *I ID D*d *dt t 10% VDS r2r1 M =TC Tj(t) p(t) τ1/r1 τ2/r2 τn/rn r2 rn r1 M =TC Tj(t) p(t) τ1/r1 τ2/r2 τn/rn ton 90% td(on) tr 10%10%VGSVGS VDSVDS td(off)td(off) tftf tofftoffton 90% td(on) tr 10%VGS VDS td(off) tf toff I,V t tata tbtb QbQa I,V t VSD ISD Ifrm tfr ta tb diSD/dt 10% Ifrm tfr = ta + tb Qfr = Qa + Qb QbQa 97% VDS VDS t, Q Q QG QGS(pl) QQGDGD Figure B. Definition of body diode switching characteristics V VGS GS, ,V VDS DS 97% VDS VGS(on) VDS t, Q Q VDD ½Lσ ½Lσ RG DUT Cσ L second device VGS(off) VDD ½Lσ ½Lσ RG DUT Cσ L second device VGS(off) Figure D. Definition of QGD Figure F. Dynamic test circuit Parasitic inductance Lσ, Parasitic capacitor Cσ, 10% ID Figure 2 IMBG120R008M2H CoolSiC™ 1200 V SiC MOSFET G2 Datasheet 15 Revision 1.10 2024-01-12

Revision history

Document revision Date of release Description of changes 0.10 2023-08-08 Preliminary datasheet 1.00 2023-09-29 Final datasheet 1.10 2024-01-11 Negative gate voltage values updated Additional capacitance & charge values added E = f(tdead) graph y-axis correction to percentage values Editorial changes IMBG120R008M2H CoolSiC™ 1200 V SiC MOSFET G2 Datasheet 16 Revision 1.10 2024-01-12

All referenced product or service names and trademarks are the property of their respective owners. Edition 2024-01-12 Published by Infineon Technologies AG

81726 Munich, Germany

© 2024 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-ABF364-003 Important notice The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. Warnings Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.

Product Information

IMBG120R008M2H specifications and overview.

Summary

CoolSiC™ 1200 V SiC MOSFET G2 Revision 1.10 2024-01-12

Description

CoolSiC™ 1200 V SiC MOSFET G2 Revision 1.10 2024-01-12

Source title IMBG120R008M2H Datasheet(PDF) - Infineon Technologies AG

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