IMBF170R1K0M1 INFINEON | Alldatasheet

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Technical content

Features

 Revolutionary semiconductor material - Silicon Carbide  Optimized for fly-back topologies  12V/0V gate-source voltage compatible with most fly-back controllers  Very low switching losses  Benchmark gate threshold voltage, VGS(th) = 4.5V  Fully controllable dV/dt for EMI optimization Benefits  Reduction of system complexity  Directly drive from fly-back controller  Efficiency improvement and cooling effort reduction  Enabling higher frequency Potential applications  Energy generation o Solar string inverter o Solar Central inverter  Industrial power supplies o Industrial UPS o Industrial SMPS  Infrastructure – Charger o Charger Product validation Qualified for industrial applications according to the relevant tests of JEDEC 47/20/22 Note: the source and sense pins are not exchangeable, their exchange might lead to malfunction recommended for forward operation mode only Table 1 Key Performance and Package Parameters Type VDS ID TC = 25°C, Rth(j-c,max) RDS(on) Tvj = 25°C, ID = 1A, VGS = 12V Tvj,max Marking Package IMBF170R1K0M1 1700V 5.2A 1000mΩ 175°C 170M11K0 PG-TO263-7 Drain Source pin 3~7 Gate pin 1 Sense pin 2

Datasheet 2 of 16 2.2 2020-12-11 IMBF170R1K0M1 CoolSiC™ 1700V SiC Trench MOSFET 1700V SiC Trench MOSFET Table of contents Table of contents

Datasheet 3 of 16 2.2 2020-12-11 IMBF170R1K0M1 CoolSiC™ 1700V SiC Trench MOSFET Maximum ratings

1 Maximum ratings

For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of the maximum ratings stated in this datasheet. Table 2 Maximum ratings Parameter Symbol Value Unit Drain-source voltage, Tvj ≥ 25°C VDSS 1700 V DC drain current for Rth(j-c,max), limited by Tvjmax, VGS = 12V, TC = 25°C TC = 100°C ID 5.2 3.7 A Pulsed drain current, tp limited by Tvjmax, VGS = 12V ID,pulse1 13.3 A Gate-source voltage2 Max transient voltage, < 1% duty cycle Recommended turn-on gate voltage Recommended turn-off gate voltage VGS VGS,on VGS,off -10… 20 12… 15 V Power dissipation, limited by Tvjmax TC = 25°C TC = 100°C Ptot 68 W Virtual junction temperature Tvj -55… 175 °C Storage temperature Tstg -55… 150 °C Soldering temperature Reflow soldering (MSL1 according to JEDEC J-STD-020) Tsold 260 °C 1 verified by design 2 Important note: The selection of positive and negative gate-source voltages impacts the long-term behavior of the device. The design guidelines described in Application Note AN2018-09 must be considered to ensure sound operation of the device over the planned lifetime.

Datasheet 4 of 16 2.2 2020-12-11 IMBF170R1K0M1 CoolSiC™ 1700V SiC Trench MOSFET Thermal resistances

2 Thermal resistances

Parameter Symbol Conditions Value Unit min. typ. max. MOSFET thermal resistance, junction – case Rth(j-c) - 1.7 2.2 K/W Thermal resistance, junction – ambient Rth(j-a) leaded - - 62 K/W

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Electrical Characteristics

3 Electrical Characteristics

3.1 Static characteristics

Table 4 Static characteristics (at Tvj = 25°C, unless otherwise specified) Parameter Symbol Conditions Value Unit min. typ. max. Drain-source on-state resistance RDS(on) VGS = 12V, ID = 1A, Tvj = 25°C Tvj = 100°C Tvj = 175°C VGS = 15V, ID = 1A, Tvj = 25°C 1000 1416 2037 809 880 mΩ Gate-source threshold voltage VGS(th) (tested after 1 ms pulse at VGS = 20V) ID = 1.1mA, VDS = VGS Tvj = 25°C Tvj =175°C 3.5 4.5 3.6 5.7 V Zero gate voltage drain current IDSS VGS = 0V, VDS = 1700V Tvj = 25°C Tvj = 175°C 0.4 µA Gate-source leakage current IGSS VGS = 20V, VDS = 0V - - 100 nA VGS = -10V, VDS = 0V - - -100 nA Transconductance gfs VDS = 20V, ID = 1A - 0.42 - S Internal gate resistance RG,int f = 1MHz, VAC = 25mV - 35 - Ω

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3.2 Dynamic characteristics

Table 5 Dynamic characteristics (at Tvj = 25°C, unless otherwise specified) Parameter Symbol Conditions Value Unit min. typ. max. Input capacitance Ciss VDD = 1000V, VGS = 0V, f = 1MHz, VAC = 25mV - 275 - pF Output capacitance Coss - 7.2 - Reverse capacitance Crss - 0.7 - Coss stored energy Eoss - 1.3 - µJ Total gate charge QG VDD = 1000V, ID = 1A, VGS = 0/12V, turn-on pulse - 5 - nC Gate to source charge QGS,pl - 1.5 - Gate to drain charge QGD - 1.6 -

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3.3 Switching characteristics

Table 6 Switching characteristics, Inductive load 3 Parameter Symbol Conditions Value Unit min. typ. max. MOSFET Characteristics, Tvj = 25°C Turn-on delay time td(on) VDD = 1000V, ID = 1A, VGS = 0/12V, RG,ext = 22Ω, Lσ = 40nH, diode: body diode at VGS = 0V see Fig. E - 19 - ns Rise time tr - 14 - Turn-off delay time td(off) - 20 - Fall time tf - 22 - Turn-on energy Eon - 31 - µJ Turn-off energy Eoff - 7 - Total switching energy Etot - 37 - MOSFET Characteristics, Tvj = 175°C Turn-on delay time td(on) VDD = 1000V, ID = 1A, VGS = 0/12V, RG,ext = 22Ω, Lσ = 40nH, diode: body diode at VGS = 0V see Fig. E - 16 - ns Rise time tr - 11 - Turn-off delay time td(off) - 23 - Fall time tf - 23 - Turn-on energy Eon - 33 - µJ Turn-off energy Eoff - 8 - Total switching energy Etot - 41 - 3 The chip technology was characterized up to 200 kV/µs. The measured dV/dt was limited by measurement test setup and package. In applications, e.g. fly-back topology, the switching behavior highly depends on the circuitry (transformer, snubber…), the switching loss in the application will be different from the datasheet value.

Datasheet 8 of 16 2.2 2020-12-11 IMBF170R1K0M1 CoolSiC™ 1700V SiC Trench MOSFET Electrical characteristic diagrams

4 Electrical characteristic diagrams

Figure 1 Safe operating area (SOA) (VGS = 0/12V, Tc = 25°C, Tj ≤ 175°C) Figure 2 Power dissipation as a function of case temperature limited by bond wire (Ptot = f(TC)) Figure 3 Maximum DC drain to source current as a function of case temperature limited by bond wire (IDS = f(TC)) Figure 4 Typical transfer characteristic (IDS = f(VGS), VDS = 20V, tP = 20µs) 0 500 1000 1500 2000 IDS [A] VDS [V] not for linear use 0 25 50 75 100 125 150 175 Ptot [W] TC [ C] Rth(j-c,max) Rth(j-c,typ) 0 25 50 75 100 125 150 175 IDS [A] TC [ C] Rth(j-c,max) Rth(j-c,typ) 0 5 10 15 20 IDS [A] VGS [V] Tvj=25°C Tvj=175°C

Datasheet 12 of 16 2.2 2020-12-11 IMBF170R1K0M1 CoolSiC™ 1700V SiC Trench MOSFET Electrical characteristic diagrams

Datasheet 13 of 16 2.2 2020-12-11 IMBF170R1K0M1 CoolSiC™ 1700V SiC Trench MOSFET Package drawing

5 Package drawing

Datasheet 14 of 16 2.2 2020-12-11 IMBF170R1K0M1 CoolSiC™ 1700V SiC Trench MOSFET Test conditions

6 Test conditions

Datasheet 15 of 16 2.2 2020-12-11 IMBF170R1K0M1 CoolSiC™ 1700V SiC Trench MOSFET

Revision history

Date of release Description of changes 2.1 2020-12-11 Final Datasheet 2.2 2020-12-11 Correction of circuit symbol on page 1

81726 München, Germany

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