IM12B20EC1 INFINEON | Alldatasheet

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Technical content

Features

  • Fully isolated Dual In-Line molded module
  • Very low thermal resistance due to DCB substrate
  • Lead-free terminal plating; RoHS compliant Inverter
  • 1200 V TRENCHSTOPTM IGBT7 S7
  • Rugged 1200 V SOI gate driver technology with stability against transient and negative voltage
  • Allowable negative VS potential up to -11 V for signal transmission at VBS = 15 V
  • Integrated bootstrap functionality
  • Overcurrent shutdown
  • Built-in NTC thermistor for temperature monitoring
  • Undervoltage lockout at all channels
  • Low-side emitter pins accessible for phase current monitoring (open emitter)
  • Cross-conduction prevention
  • All of 6 switches turn off during protection
  • Programable fault clear timing and enable input Potential applications Fan drives and pumps Active filter for HVAC Low power motor drives (GPI, Servo Drives)

Datasheet 2 of 22 V 1.00 2024-05-15 CIPOS™ Maxi IPM IM12B20EC1, 1200 V 20 A Product validation Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Table 1 Product information Base part number Package type Standard pack Remark Form MOQ IM12B20EC1 DIP 36x23D 14 pcs / Tube 280 pcs

Datasheet 3 of 22 V 1.00 2024-05-15 Table of contents CIPOS™ Maxi IPM IM12B20EC1, 1200 V 20 A Table of contents

Datasheet 4 of 22 V 1.00 2024-05-15 CIPOS™ Maxi IPM IM12B20EC1, 1200 V 20 A Internal electrical schematic

1 Internal electrical schematic

NW (18) NV (19) W (21) V (22) U (23) P (24) (2) VB(U) (13) VDD (15) ITR IP (10) LIN(U) (11) LIN(V) (12) LIN(W) (14) RFE (16) VSS (4) VB(V) (6) VB(W) (7) HIN(U) (8) HIN(V) (9) HIN(W) (1) VS(U) (3) VS(V) (5) VS(W) NU (20) RFE VDD LIN 3 LO 3 LO 2 LO 1 HO 1 HO 2 HO 3 VB 1 VS 1 VS 2 VS 3 HIN 3 HIN 2 HIN 1 VB 2 RBS 3 VB 3 (17) VTH LIN 1 LIN 2 ITR IP VSS RBS 1 RBS 2 Figure 1 Internal electrical schematic

Datasheet 5 of 22 V 1.00 2024-05-15 CIPOS™ Maxi IPM IM12B20EC1, 1200 V 20 A Pin description

2 Pin description

2.1 Pin assignment

(2) VB(U) (16) VSS (15) ITRIP (10) LIN(U) (11) LIN(V) (12) LIN(W) (17) VTH (14) RFE (4) VB(V) (6) VB(W) (7) HIN(U) (8) HIN(V) (9) HIN(W) (1) VS(U) (3) VS(V) (5) VS(W) (18) NW (19) NV (21) W (22) V (23) U (24) P (20) NU(13) VDD Figure 2 Pin configuration Table 2 Pin assignment Pin number Pin name Pin description

1 VS(U) U-phase high-side floating IC supply offset voltage

2 VB(U) U-phase high-side floating IC supply voltage

3 VS(V) V-phase high-side floating IC supply offset voltage

4 VB(V) V-phase high-side floating IC supply voltage

5 VS(W) W-phase high-side floating IC supply offset voltage

6 VB(W) W-phase high-side floating IC supply voltage

7 HIN(U) U-phase high-side gate driver input

8 HIN(V) V-phase high-side gate driver input

9 HIN(W) W-phase high-side gate driver input

10 LIN(U) U-phase low-side gate driver input

11 LIN(V) V-phase low-side gate driver input

12 LIN(W) W-phase low-side gate driver input

13 VDD Low-side control supply

14 RFE Programmable fault clear time, fault output, enable input

15 ITRIP Overcurrent shutdown input

16 VSS Low-side control negative supply

17 VTH Temperature output

18 NW W-phase low-side emitter

19 NV V-phase low-side emitter

20 NU U-phase low-side emitter

21 W Motor W-phase output

22 V Motor V-phase output

23 U Motor U-phase output

24 P Positive bus input voltage

2.2 Pin description

responsible for the control of the integrated IGBT s. Figure 4. It is not recommended for proper work to provide input pulse-width lower than 1 µs. same leg (i.e., HO1 and LO1, HO2 and LO2, HO3 and LO3). kept steadily in a safe state. conduction of the external power switches. IPM functionality. This is enabling function.

Datasheet 7 of 22 V 1.00 2024-05-15 CIPOS™ Maxi IPM IM12B20EC1, 1200 V 20 A Pin description VTH (Thermistor temperature output, Pin 17) The VTH pin provides direct access to the NTC thermistor, which is referenced to V SS. An external pull-up resistor connected to +5 V ensures that the resulting voltage can be directly connected to the microcontroller. ITRIP (Overcurrent detection function, Pin 15) The IM12B20EC1 product provides an overcurrent detection function by connecting the ITRIP input with the IGBT current feedback. The I TRIP comparator threshold (typical 0.5 V) is referenced to VSS ground. An input noise filter (tITRIP = typ. 500 ns) prevents the driver to detect false overcurrent events. Overcurrent detection generates a shutdown of outputs of the gate driver. After the shutdown propagation delay of typically 1 µs. The fault-clear time is set to typical 1.1 ms at RRCIN = 1 MΩ and CRCIN = 2 nF. VDD, VSS (Control supply and reference, Pin 13 and reference, Pin 16) VDD is the control supply and it provides power both to input logic and to output power stage. Input logic is referenced to VSS ground. The undervoltage circuit enables the device to operate at power on when a supply voltage of at least a typical voltage of VDDUV+ = 12.2 V is present. The IC shuts down all the gate drivers power outputs, when the VDD supply voltage is below V DDUV- = 11.2 V. This prevents the external power switches from critically low gate voltage levels during on-state and therefore from excessive power dissipation. VB (U, V, W) and VS (U, V, W) (High-side supplies, Pin 1 - 6) VB to VS is the high-side supply voltage. The high-side circuit can float with respect to V SS following the external high-side power device emitter voltage. Due to the low power consumption, the floating driver stage is supplied by integrated bootstrap circuit. The undervoltage detection operates with a rising supply threshold of typical V BSUV+ = 11. 2 V and a falling threshold of VBSUV- = 10.2 V. VS (U, V, W) provide a high robustness against negative voltage in respect of VSS of -50 V transiently. This ensures very stable designs even under rough conditions. NW, NV, NU (Low-side emitter, Pin 18 - 20) The low -side emitters are available for current measurements of each phase leg. It is recommended to keep the connection to pin V SS as short as possible in order to avoid unnecessary inductive voltage drops. W, V, U (High-side emitter and low-side collector, Pin 21 - 23) These pins are connected to motor U, V, W input pins. P (Positive bus input voltage, Pin 24) The high -side IGBT s are connected to the bus voltage. It is noted that the bus voltage does not exceed 900 V.

Datasheet 8 of 22 V 1.00 2024-05-15 CIPOS™ Maxi IPM IM12B20EC1, 1200 V 20 A Absolute maximum ratings

3 Absolute maximum ratings

(VDD = 15 V and TJ = 25° C, if not stated otherwise)

3.1 Module section

Description Symbol Condition Value Unit Storage temperature range TSTG -40 ~ 125 °C Operating case temperature TC Refer to Figure 7 -40 ~ 125 °C Operating junction temperature TJ -40 ~ 150 °C Isolation voltage VISO 1 min, RMS, f = 60 Hz 2500 V

3.2 Inverter section

Description Symbol Condition Value Unit Maximum blocking voltage VCES/VRRM IC = 250 µA 1200 V DC link supply voltage of P - N VPN Applied between P - N 900 V DC link supply voltage (surge) of P - N VPN(Surge) Applied between P - N 1000 V Collector current1 IC TC = 25° C, TJ < 150° C ±30 A TC = 80° C, TJ < 150° C ±20 Maximum peak collector current ICP TC = 25° C, TJ < 150° C, limited by TJmax. ±35 A Power dissipation per IGBT Ptot 156 W Short circuit withstand time tSC VDD = 15 V, VDC ≤ 800 V, TJ ≤ 150° C 5 µs

3.3 Control section

Description Symbol Condition Value Unit High-side offset voltage VS 1200 V Repetitive peak reverse voltage of bootstrap diode VRRM 1200 V Module control supply voltage VDD Applied between VDD - VSS -1 ~ 20 V High-side floating supply voltage (VB reference to VS) VBS Applied between VB - VS -1 ~ 20 V Input voltage (LIN, HIN, ITRIP, RFE) VIN -1 ~ VDD + 0.3 V 1Limited by junction temperature.

Datasheet 9 of 22 V 1.00 2024-05-15 CIPOS™ Maxi IPM IM12B20EC1, 1200 V 20 A Thermal characteristics

4 Thermal characteristics

Description Symbol Condition Value Unit Min. Typ. Max. Single IGBT thermal resistance, junction-case RthJC High-side V-phase (See Figure 7 for TC measurement point) - - 0.80 K/W Single diode thermal resistance, junction-case RthJC, D - - 1.55 K/W

Datasheet 10 of 22 V 1.00 2024-05-15 CIPOS™ Maxi IPM IM12B20EC1, 1200 V 20 A Recommended operation conditions

5 Recommended operation conditions

All voltages are absolute voltages referenced to VSS-potential unless otherwise specified. Description Symbol Value Unit Min. Typ. Max. DC link supply voltage of P - N VPN 350 600 800 V Low-side supply voltage VDD 13.5 15 18.5 V High-side floating supply voltage (VB vs. VS) VBS 12.5 - 18.5 V Logic input voltages LIN, HIN, ITRIP, RFE VIN VITRIP VRFE 0 - 5 V Inverter PWM carrier frequency fPWM - - 20 kHz External dead time between HIN & LIN DT 1 - - µs Voltage between VSS - N (including surge) VCOMP -5 - 5 V Minimum input pulse width PWIN(ON), PWIN(OFF) 1 - - µs Control supply variation ΔVBS ΔVDD

1 V/µs

Datasheet 11 of 22 V 1.00 2024-05-15 CIPOS™ Maxi IPM IM12B20EC1, 1200 V 20 A Static parameters

6 Static parameters

(VDD = 15 V and TJ = 25° C, if not stated otherwise)

6.1 Inverter section

Description Symbol Condition Value Unit Min. Typ. Max. Collector-emitter saturation voltage VCE(Sat) IC = 20 A, TJ = 25° C IC = 20 A, TJ = 150° C 2.25 2.80 2.65 - V Collector-emitter leakage current ICES VCE = 1200 V - - 1 mA Diode forward voltage VF IF = 20 A, TJ = 25° C IF = 20 A, TJ = 150° C 2.40 2.40 2.75 - V

6.2 Control section

Description Symbol Condition Value Unit Min. Typ. Max. Logic "1" input voltage (LIN, HIN) VIH - 1.9 2.3 V Logic "0" input voltage (LIN, HIN) VIL 0.7 0.9 - V ITRIP positive going threshold VIT, TH+ 475 500 525 mV ITRIP input hysteresis VIT, HYS - 55 - mV VDD and VBS supply undervoltage positive going threshold VDD and VBS supply undervoltage negative going threshold VDD and VBS supply undervoltage lockout hysteresis VDDUVH, VBSUVH - 1.0 - V Quiescent VBSx supply current (VBSx only) IQBS VHIN = 0 V - 175 - µA Quiescent VDD supply current (VDD only) IQDD VLIN = 0 V, VHINX = 5 V - 1.0 - mA Input bias current for LIN, HIN IIN+ VIN = 5 V - 1.0 - mA Input bias current for ITRIP IITRIP+ VITRIP = 5 V - 30 100 µA Input bias current for RFE IRFE VRFE = 5 V, VITRIP = 0 V - - 5 µA RFE output voltage VRFE IRFE = 10 mA, VITRIP = 1 V - 0.4 - V VRFE positive going threshold VRFE, TH+ - 1.9 2.3 V VRFE negative going threshold VRFE, TH- 0.7 0.9 - V Bootstrap diode forward voltage VF, BSD IF = 0.3 mA - 0.9 - V Bootstrap diode resistance RBSD Between VF = 4 V and VF = 5 V - 120 - Ω

Datasheet 12 of 22 V 1.00 2024-05-15 CIPOS™ Maxi IPM IM12B20EC1, 1200 V 20 A Dynamic parameters

7 Dynamic parameters

(VDD = 15 V and TJ = 25° C, if not stated otherwise)

7.1 Inverter section

Description Symbol Condition Value Unit Min. Typ. Max. Turn-on propagation delay time ton VLIN, HIN = 5 V, IC = 20 A, VDC = 600 V - 815 - ns Turn-on rise time tr - 50 - ns Turn-on switching time tc(on) - 225 - ns Reverse recovery time trr - 250 - ns Turn-off propagation delay time toff VLIN, HIN = 0 V, IC = 20 A, VDC = 600 V - 1015 - ns Turn-off fall time tf - 115 - ns Turn-off switching time tc(off) - 210 - ns Short circuit propagation delay time tSCP From VIT, TH+ to 10% ISC - 1575 - ns IGBT turn-on energy (includes reverse recovery of diode) Eon VDC = 600 V, IC = 20 A TJ = 25° C 150° C 2.06 3.18 mJ IGBT turn-off energy Eoff VDC = 600 V, IC = 20 A TJ = 25° C 150° C 0.99 1.57 mJ Diode recovery energy Erec VDC = 600 V, IC = 20 A TJ = 25° C 150° C 0.34 0.75 mJ

7.2 Control section

Description Symbol Condition Value Unit Min. Typ. Max. Input filter time ITRIP tITRIP VITRIP = 1 V - 500 - ns Input filter time at LIN, HIN for turn on and off tFIL, IN VLIN, HIN = 0 V or 5 V - 350 - ns Fault clear time after ITRIP-fault tFLT, CLR VITRIP = 1 V, Vpull-up = 5 V (R = 1 MΩ, C = 2 nF) - 1.1 - ms ITRIP to fault propagation delay tFLT VLIN, HIN = 0 or 5 V, VITRIP = 1 V - 650 900 ns Internal deadtime DTIC VIN = 0 or VIN = 5 V 300 - - ns Matching propagation delay time (On & Off) all channels MT External dead time > 500 ns - - 130 ns

Datasheet 13 of 22 V 1.00 2024-05-15 CIPOS™ Maxi IPM IM12B20EC1, 1200 V 20 A Thermistor characteristics

8 Thermistor characteristics

Description Symbol Condition Value Unit Min. Typ. Max. Resistance RNTC TNTC = 25° C - 85 - kΩ B-constant of NTC (Negative Temperature Coefficient) thermistor B (25/100) - 4092 - K Temp. [° C] RMin. [kΩ] RTyp. [kΩ] RMax. [kΩ] 50 29.151 30.157 31.178 60 20.018 20.669 21.329 70 13.994 14.424 14.858 80 9.946 10.234 10.523 90 7.177 7.373 7.569 100 5.253 5.388 5.523 110 3.884 3.99 4.096 120 2.908 2.991 3.075 125 2.527 2.601 2.676 Figure 6 Thermistor resistance – temperature curve and table (For more information, please refer to application note ‘AN-2024-05 CIPOSTM Maxi IPM IM12BxxxC1 Series application note’.) 500 1000 1500 2000 2500 3000 3500 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 Thermistor resistance [kΩ] Thermistor temperature [°C] Min. Typ. Max. 50 60 70 80 90 100 110 120 130 Thermistor resistance [kΩ] Thermistor temperature [°C] Min. Typ. Max.

Datasheet 14 of 22 V 1.00 2024-05-15 CIPOS™ Maxi IPM IM12B20EC1, 1200 V 20 A Mechanical characteristics and ratings

9 Mechanical characteristics and ratings

Description Condition Value Unit Min. Typ. Max. Comparative Tracking Index (CTI) 600 - - Mounting torque M3 screw and washer 0.49 - 0.78 N∙m Backside curvature Refer to Figure 8 0 - 150 µm Weight - 7.1 - g

Datasheet 15 of 22 V 1.00 2024-05-15 CIPOS™ Maxi IPM IM12B20EC1, 1200 V 20 A Qualification information

10 Qualification information

UL certification File number: E314539 Moisture sensitivity level - RoHS compliant Yes (Lead-free terminal plating) ESD (Electrostatic Discharge) HBM (Human body model) class 2 CDM (Charged device model) class C3

Datasheet 16 of 22 V 1.00 2024-05-15 CIPOS™ Maxi IPM IM12B20EC1, 1200 V 20 A Diagrams and tables

11 Diagrams and tables

11.1 TC measurement point

Figure 7 TC measurement point1

11.2 Backside curvature measurement point

Figure 8 Backside curvature measurement position 1Any measurement except for the specified point in Figure 7 is not relevant for the temperature verification and brings wrong or different information.

Datasheet 17 of 22 V 1.00 2024-05-15 CIPOS™ Maxi IPM IM12B20EC1, 1200 V 20 A Diagrams and tables

11.3 Switching time definition

0.9V 2.1V 90% 10%10% 10% 90% toff tf ton tr tc(off) tc(on ) 10% trr 10% Figure 9 Switching times definition

11.4 Sleep function timing diagram

Figure 10 Sleep function timing diagram

Datasheet 18 of 22 V 1.00 2024-05-15 CIPOS™ Maxi IPM IM12B20EC1, 1200 V 20 A Application guide

12.1 Typical application schematic

<Signal for protection> Temperature monitor Micro Controller #6 #7 3-ph AC Motor V-phase current sensing W-phase current sensing <Signal for protection> Power GN D line Control GN D line #3.2 #3.1 NW (18) NV (19) W (21) V (22) U (23) P (24) (2) VB(U) (13) VDD (15) ITR IP (10) LIN(U) (11) LIN(V) (12) LIN(W) (14) RFE (16) VSS (4) VB(V) (6) VB(W) (7) HIN(U) (8) HIN(V) (9) HIN(W) (1) VS(U) (3) VS(V) (5) VS(W) NU (20) RFE VDD LIN 3 LO 3 LO 2 LO 1 HO 1 HO 2 HO 3 VB 1 VS 1 VS 2 VS 3 HIN 3 HIN 2 HIN 1 VB 2 RBS 3 VB 3 (17) VTH LIN 1 LIN 2 ITR IP VSS RBS 1 RBS 2 5.0 V or 3.3 V line 5.0 V or 3.3 V line Figure 11 Typical application circuit 1. Input circuit - To reduce input signal noise by high speed switching, the RIN and CIN filter circuit should be mounted. (100 Ω, 1 nF) - CIN should be placed as close to VSS pin as possible. 2. ITRIP circuit - To prevent protection function errors, CITRIP should be placed as close to ITRIP and VSS pins as possible. - To prevent fault operation of the protection function, an RC filter is recommended around 1.5~2.0 µs (68 Ω, 22 nF, “Signal for protection” in the schematic leads the signal into the microcontroller ”). 3. RFE circuit

3.1 Pull-up resistor and pull-down capacitor

  • RFE output is an open drain output. This signal line should be pulled up to the positive side of the 5 .0 V / 3.3 V logic power supply with a proper resistor RPU. - The fault-clear time is adjusted by RC network of a pull-up resistor, a pull-down capacitor and pull-up voltage. ◼ tFLT, CLR = -Rpull-up ∙ Cpull-down ∙ ln(1- VRFE,TH+/Vpull-up) + internal fault-clear time 160 s ◼ tFLT, CLR = -1 MΩ x 2 nF x ln(1 - 1.9 / 5 V) + 160 s  1.1 ms at R = 1 MΩ, C = 2 nF and Vpull-up = 5 V ◼ A pull-up resistor is limited to max. 2 MΩ

3.2 RC filter

  • It is recommended that RC filter be placed as close to the controller as possible.

Datasheet 19 of 22 V 1.00 2024-05-15 CIPOS™ Maxi IPM IM12B20EC1, 1200 V 20 A Application guide 4. VB-VS circuit - Capacitor for high side floating supply voltage should be placed as close to V B and VS pins as possible. 5. Snubber capacitor - The wiring between IPM and snubber capacitor including shunt resistor should be as short as possible. 6. Shunt resistor - The shunt resistor of SMD type should be used for reducing its stray inductance. 7. Ground pattern - Ground pattern should be separated at only one point of shunt resistor as short as possible.

12.2 Performance chart

Figure 12 Maximum operating current SOA1 1This maximum operating current SOA is just one of example based on typical characteristics for this product. It can be changed by each user’s actual operating conditions.

Datasheet 20 of 22 V 1.00 2024-05-15 CIPOS™ Maxi IPM IM12B20EC1, 1200 V 20 A Package outline Figure 13 IM12B20EC1

Datasheet 21 of 22 V 1.00 2024-05-15 CIPOS™ Maxi IPM IM12B20EC1, 1200 V 20 A

Revision history

version Date of release Description of changes V 1.00 2024-05-15 Initial release

81726 München, Germany

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