ILX207DW

ILX207DW INTEGRAL | Alldatasheet

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Interface IC of data serial transfer with one supply voltage Interface transceivers of serial data as per RS - 232 MAX207 standard with one supply voltage and transmitter bipolar output voltage formed by the embedded voltage multiplication oscillator on 4 external capacitances equal to 0,1mkF, corresponding to EIA/TIA-232E, V.28 standards, are purposed for application in up-to-date high- performance calculating systems, high-speed electronic devices with high reliability of information exchange between remote objects. Functions: 5 transmitters and 3 receivers of serial data as per RS – 232 standards Truth table Inputs Outputs RIN, TIN ROUT, TOUT H L L H Note - H – high voltage level; L – low voltage level Packaged IC marking ILX207DW SOIC TA = from -40 to 85 °C ILX207DW Vcc GND T1out T1in T2in R2out R1in R1out T2out R2in C2- C2+ C1- C1+ T3out T4out T5in T5out T4in T3in R3out R3in Figure 1 – Symbols of pins in package

0.1 mkF 0.1 mkF Figure 2 - Block-diagram 5 V 0.1 mkF 0.1mkF C1+ C1- C2+ C2- TTL/CMOS outputs RS-232 inputs TTL/CMOS inputs RS-232 outputs +5 V +5 V +5 V +5 V +5 V 400к 400к 400к 400к 400к 6.3 V 16 V 16 V 6.3 V T1in T2in T3in T4in T5in R1out R2out R3out R3in R2in R1in T5out T4out T3out T2out T1ou t

Transmitter data output (levels RS – 232) T3OUT Transmitter data output (levels RS – 232) T1OUT Transmitter data output (levels RS – 232) T2OUT Receiver data input (levels RS – 232) R1IN Receiver data output (levels TTL/CMOS) R1OUT Transmitter data input (levels TTL/CMOS) T2IN Transmitter data input (levels TTL/CMOS) T1IN Common output GND Supply output from voltage source VCC Output of external capacitance of positive voltage multiplication block C1+ Output of multiplication block positive voltage Output of external capacitance of positive voltage multiplication block C1- Output of external capacitance of negative voltage multiplication block C2+ Output of external capacitance of negative voltage multiplication block C2- Output of multiplication block negative voltage Receiver data input (levels RS – 232) R3IN Receiver data output (levels TTL/CMOS) R3OUT Transmitter data input (levels TTL/CMOS) T3IN Transmitter data input (levels TTL/CMOS) T4IN Transmitter data output (levels RS – 232) T5OUT Transmitter data input (levels TTL/CMOS) T5IN Receiver data output (levels TTL/CMOS) R2OUT Receiver data input (levels RS – 232) R2IN Transmitter data output (levels RS – 232) T4OUT

-0.3 6.0 V Transmitter low output voltage 0.3 -14 Transmitter high output voltage VCC - 0.3 V VTIN Transmitter input voltage -0.3 V+ + 0.3 V VRIN Receiver input voltage -30 РРК Dissipated power (for copper frame) 941 mW ISC Transmitter short-circuit output current continuously mA Та Ambient temperature -60 150 Maximum ratings Rate Symbol Parameter min max Unit VCC Supply voltage 4.5 5.5 V Transmitter low output voltage -5.0 Transmitter high output voltage 5.0 VTIN Transmitter input voltage VCC VRIN Receiver input voltage -30 ISC Transmitter short-circuit output current ±60 mA Та Ambient temperature -40

25°C от -40 до 85 °C Symbol Parameter Test conditions min max min max Unit ICC Consumption current static VСС = 5.5 В VIL = 0 В 28* mA Receiver electrical parameters Vh Hysteresis voltage VСС = 5.0 V 0.2 0.9 0.2 1.0 V Von On voltage Von ≤ 0.1 V IOL ≤ 20 mkA 2.4 2.3 Voff Off voltage Vo ≥ VСС - 0.1 V IOH ≤ -20 mkA 0.8 0.9 VOL Low output voltage IOL = 1.6 mA VСС = 4.5 V VIH = 2.4 V 0.3 0.4 VOH High output voltage IOH = -1.0 mA VСС = 4.5 V VIL = 0.8 V 3.6 3.5 RI Input resistance VСС = 5.0 V 3.0 7.0 kOhm Transmitter electrical parameters VOL Low output voltage VСС = 4.5 V VIH = 2.0 V RL = 3.0 kOhm -5.2 -5.0 V VOH High output voltage VСС = 4.5 V VIL = 0.8 V RL = 3.0 kOhm 5.2 5.0 IIL Low input current VСС = 5.5 V VIL = 0 V 170 200 mkA ISC Short-circuit output current VСС = 5.5 V VО = 0 V VIL = 0 V -50 -60 mA VСС = 5.5 V VО = 0 V VIН = VСС RO Output resistance VСС=V+=V-= 0 V VО = ±2 V 350 300 Ohm SR Speed of output front change VСС = 5.0 V, СL = 50-1000 pF RL = 3-7 kOhm 3.0 V/mksec ST Information transmission speed VСС = 4.5 V, RL = 3 kOhm, СL = 1000 pF, tW = 7 mksec 140 120 Кbit/sec Dynamic parameters ( tLH = tHL ≤ 10 nsec ) Symbol Parameter Test Rate Unit conditions 25°C from -40 to 85°C min max min max

Dimensions, mm Sign MIN MAX A 15.20 15.60 B 7.40 7.60 C 2.35 2.65 D 0.33 0.51 F 0.40 1.27 G 1.27 H 9.53 J K 0.10 0.30 M 0.23 0.32 P 10.0 10.65 R 0.25 0.75