ILD615 SIEMENS | Alldatasheet

Document overview

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Technical content

5–1

FEATURES

  • Identical Channel to Channel Footprint
  • Current Transfer Ratio (CTR) Range at I F =10 mA ILD/Q615-1: 40 – 80% Min. ILD/Q615-2: 63 – 125% Min. ILD/Q615-3: 100 – 200% Min. ILD/Q615-4: 160 – 320% Min.
  • Guaranteed CTR at I F =1 mA ILD/Q615-1: 13% Min. ILD/Q615-2: 22% Min. ILD/Q615-3: 34% Min. ILD/Q615-4: 56% Min.
  • High Collector-Emitter Voltage BV CEO =70 V
  • Dual and Quad Packages Feature: - Reduced Board Space - Lower Pin and Parts Count - Better Channel to Channel CTR Match - Improved Common Mode Rejection
  • Field-Effect Stable by TRIOS (TR ansparent IO n S hield
  • Isolation Test Voltage from Double Molded Package, 5300 VAC RMS
  • UL Approval #E52744
  • VDE #0884 Available with Option 1 Maximum Ratings (Each Channel) Emitter Derate Linearly from 25 C Detector Derate Linearly from 25 C Package C to +150 C C to +100 C C Soldering Temperature C Derate Linearly from 25 C Derate Linearly from 25 C RMS Isolation Resistance V IO =500 V, T A =25 W V IO =500 V, T A =100 W

DESCRIPTION

The ILD/Q615 are multi-channel phototransistor optocouplers that use GaAs IRLED emitters and high gain NPN phototransistors. These devices are con- structed using over/under leadframe optical coupling and double molded insulation technology resulting a Withstand Test Voltage of 7500 VAC PEAK and a Working Voltage of 1700 VAC RMS The binned min./max. and linear CTR characteristics combined with the TRIOS (TRansparent IOn Shield) field-effect process make these devices well suited for DC or AC voltage detection. Eliminating the phototransistor base connection provides added electrical noise immunity from the tran- sients found in many industrial control environments. Because of guaranteed maximum non-saturated and saturated switching characteristics, the ILD/Q615 can be used in medium speed data I/O and control systems. The binned min./max. CTR specification allow easy worst case interface calculations for both level detection and switching applica- tions. Interfacing with a CMOS logic is enhanced by the guaranteed CTR at an I F =1 mA. See Appnote 45, “How to Use Optocoupler Normalized Curves.” Dimensions in inches (mm) .268 (6.81) .255 (6.48) .390 (9.91) .379 (9.63) .045 (1.14) .030 (.76) 4°Typ. .100 (2.54) Typ. 10° Typ. 3°–9° .305 Typ. (7.75) Typ. .022 (.56) .008 (.20) .135 (3.43) .115 (2.92) Pin One I.D. .150 (3.81) .130 (3.30) .040 (1.02) .030 (.76 ) Collector Emitter Collector Emitter Anode Cathode Anode Cathode Collector Emitter Collector Emitter Collector Emitter Collector Emitter Anode Cathode Anode Cathode Anode Cathode Anode Cathode .268 (6.81) .255 (6.48) .790 (20.07) .779 (19.77 ) .045 (1.14) .030 (.76) Typ. .100 (2.54) Typ. 10° Typ. 3°–9° .305 Typ. (7.75) Typ. .022 (.56) .008 (.20) .135 (3.43 .115 (2.92) Pin One I.D. .150 (3.81) .130 (3.30) .040 (1.02) .030 (.76 ) DUAL CHANNEL ILD615 QUAD CHANNEL ILQ615 PHOTOTRANSISTOR OPTOCOUPLER

5–2 ILD/Q615 Characteristics, T A =25 C Symbol Min. Typ. Max. Unit Condition Emitter Forward Voltage V F 1 1.15 1.3 V I F =10 mA Breakdown Voltage V BR 63 0 VI R =10 m A Reverse Current I F 0.01 10 m AV R =6 V Capacitance C O 25 pF V R =0 V, f=1 MHz Thermal Resistance, Junction to Lead R THJL 750 C/W Detector Capacitance C CE 6.8 pF V CE =5 V, f=1 MHz Collector-Emitter Leakage Current, -1, -2 I CEO 25 0 n A V CE =10 V Collector-Emitter Leakage Current, -3, -4 I CEO 5 100 nA V CE =10 V Collector-Emitter Breakdown Voltage BV CEO

70 V I

=0.5 mA Emitter-Collector Breakdown Voltage BV ECO 7V I E =0.1 mA Thermal Resistance, Junction to Lead R THJL 500 C/W Package Transfer Characteristics Channel/Channel CTR Match CTRX/CTRY 1 to 1 2 to 1 I F =10 mA, V CE =5 V ILD/Q615-1 Saturated Current Transfer Ratio CTR CEsat 25 % I F =10 mA, V CE =0.4 V Current Transfer Ratio CTR CE 40 60 80 % I F =10 mA, V CE =5 V Current Transfer Ratio CTR CE 13 30 % I F =1 mA, V CE =5 V ILD/Q615-2 Saturated Current Transfer Ratio CTR CEsat 40 % I F =10 mA, V CE =0.4 V Current Transfer Ratio CTR CE 63 80 125 % I F =10 mA, V CE =5 V Current Transfer Ratio CTR CE 22 45 % I F =1 mA, V CE =5 V ILD/Q615-3 Saturated Current Transfer Ratio CTR CEsat 60 % I F =10 mA, V CE =0.4 V Current Transfer Ratio CTR CE 100 150 200 % I F =10 mA, V CE =5 V Current Transfer Ratio CTR CE 34 70 % I F =1 mA, V CE =5 V ILD/Q615-4 Saturated Current Transfer Ratio CTR CEsat 100 % I F =10 mA, V CE =0.4 V Current Transfer Ratio CTR CE 160 200 320 % I F =10 mA, V CE =5 V Current Transfer Ratio CTR CE 56 90 % I F =1 mA, V CE =5 V Isolation and Insulation Common Mode Rejection, Output High CMH 5000 V/ m sV CM =50 V P-P , R L =1 k W , I F =0 mA Common Mode Rejection, Output Low CML 5000 V/ m sV CM =50 V P-P , R L =1 k W , I F =10 mA Common Mode Coupling Capacitance C CM 0.01 pF Package Capacitance CI-O 0.8 pF V IO =0 V, f=1 MHz Insulation Resistance R S

1014 W VIO=500 V, TA=25°C

Channel to Channel Isolation 500 VAC