ILD1 SIEMENS | Alldatasheet

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Technical content

5–1

FEATURES

  • Current Transfer Ratio at I F =10 mA ILD/Q1, 20% Min. ILD/Q2, 100% Min. ILD/Q5, 50% Min.
  • High Collector-Emitter Voltage ILD/Q1: BV CEO =50 V ILD/Q2, ILD/Q5: BV CEO =70 V
  • Field-Effect Stable by TRansparent IOn Shield (TRIOS) Isolation Test Voltage, 5300 VAC RMS
  • Underwriters Lab File #E52744
  • VDE 0884 Available with Option 1 Maximum Ratings (Each Channel) Emitter Derate Linearly from 25 C Detector Collector-Emitter Reverse Voltage Derate Linearly from 25 C Package Isolation Test Voltage (between emitter and detector referred to standard climate 23 C/50%RH, RMS Isolation Resistance V IO =500 V, T A =25 IO =10 W V IO =500 V, T A =100 IO =10 W Derate Linearly from 25 C C to +150 C C to +100 C C Soldering Temperature C VDE

DESCRIPTION

The ILD/Q1/2/5 are optically coupled isolated pairs employing GaAs infrared LEDs and silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the drive while maintaining a high degree of electrical isolation between input and output. The ILD/Q1/2/5 are especially designed for driving medium-speed logic and can be used to eliminate trou- blesome ground loop and noise problems. Also these couplers can be used to replace relays and transformers in many digital interface applica- tions such as CRT modulation. The ILD1/2/5 has two isolated channels in a single DIP package and the ILQ1/2/5 has four isolated channels per pack- age. See Appnote 45, “How to Use Optocoupler Normalized Curves.” Dimensions in inches (mm) .268 (6.81) .255 (6.48) .790 (20.07) .779 (19.77 ) .045 (1.14) .030 (.76) .100 (2.54) Typ. 3°–9° .305 Typ. (7.75) Typ. .022 (.56) .008 (.20) .135 (3.43 .115 (2.92) Pin One I.D. Pin One I.D. .150 (3.81) .130 (3.30) .040 (1.02) .030 (.76 ) .268 (6.81) .255 (6.48) .390 (9.91) .379 (9.63) .045 (1.14) .030 (.76) 4° Typ. 4° Typ. .100 (2.54) Typ. 10° Typ. 10° Typ. 3°–9° .305 Typ. (7.75) Typ. .022 (.56) .008 (.20) .135 (3.43) .115 (2.92) .150 (3.81) .130 (3.30) .040 (1.02) .030 (.76 ) Emitter Collector Collector Emitter Anode Cathode Cathode Anode Emitter Collector Collector Emitter Emitter Collector Collector Emitter Anode Cathode Cathode Anode Anode Cathode Cathode Anode Quad Channel Dual Channel DUAL CHANNEL ILD1/2/5 QUAD CHANNEL ILQ1/2/5 PHOTOTRANSISTOR OPTOCOUPLER

5–2 ILD/Q1/2/5 Characteristics Package Transfer Characteristics (Each Channel) Symbol Min. Typ. Max. Unit Condition Emitter Forward Voltage V F 1.25 1.65 V I F =60 mA Reverse Current I R 0.01 10 m AV R =6 V Capacitance C 25 pF V R =0 V, f=1 MHz Thermal Resistance, Junction to Lead R THJL 750 C/W Detector Capacitance C CE 6.8 pF V CE =5 V, f=1 MHz Leakage Current, Collector-Emitter I CEO 55 0 n A V CE =10 V Saturation Voltage, Collector-Emitter V CESAT 0.25 0.4 I CE =1 mA, I B =20 m A DC Forward Current Gain HFE 200 650 1800 V CE = 10 V, I B =20 m A Saturated DC Forward Current Gain HFE SAT 120 400 600 V CE = 0.4 V, I B =20 m A Thermal Resistance, Junction to Lead R THJL 500 C/W Symbol Min. Typ. Max. Unit Condition ILD/Q1 Saturated Current Transfer Ratio (Collector-Emitter) CTR CESAT 75 % I F =10 mA, V CE =0.4 V Current Transfer Ratio (Collector-Emitter) CTR CE 20 90 300 % I F =10 mA, V CE =10 V ILD/Q2 Saturated Current Transfer Ratio (Collector-Emitter) CTR CESAT 170 % I F =10 mA, V CE =0.4 V Current Transfer Ratio (Collector-Emitter) CTR CE 100 200 500 % I F =10 mA, V CE =10 V ILD/Q5 Saturated Current Transfer Ratio (Collector-Emitter) CTR CESAT 100 % I F =10 mA, V CE =0.4 V Current Transfer Ratio (Collector-Emitter) CTR CE 50 130 400 % I F =10 mA, V CE =10 V Isolation and Insulation Common Mode Rejection, Output High C MH 5000 V/ m sV CM =50 V P-P , R L =1 k W , I F =0 mA Common Mode Rejection, Output Low C ML 5000 V/ m sV CM =50 V P-P , R L =1 k W , I F =10 mA Common Mode Coupling Capacitance C CM 0.01 pF Package Capacitance C IO 0.8 pF V IO =0 V, f=1 MHz