ILQ3 SIEMENS | Alldatasheet
Document overview
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Technical content
5–158
DESCRIPTION
The ILD/Q3 are optically coupled isolated pairs employing GaAs infrared LEDs and silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the drive while maintain- ing a high degree of electrical isolation between input and output. The ILD/Q3 are especially designed for driving medium-speed logic and can be used to eliminate troublesome ground loop and noise problems. Also these couplers can be used to replace relays and transformers in many digital interface applications such as CRT modulation. The ILD3 has two isolated channels in a single DIP package and the ILQ3 has four isolated channels per package. See Appnote 45, “How to Use Optocoupler Normalized Curves.” Package Dimensions in Inches (mm) .268 (6.81) .255 (6.48) .790 (20.07) .779 (19.77 ) .045 (1.14) .030 (.76) .100 (2.54) Typ. 3°–9° .305 Typ. (7.75) Typ. .022 (.56) .008 (.20) .135 (3.43) .115 (2.92) Pin One I.D. Pin One I.D. .150 (3.81) .130 (3.30) .040 (1.02) .030 (.76 ) .268 (6.81) .255 (6.48) .390 (9.91) .379 (9.63) .045 (1.14) .030 (.76) 4° Typ. 4° Typ. .100 (2.54) Typ. 10° Typ. 10° Typ. 3°–9° .305 Typ. (7.75) Typ. .022 (.56) .008 (.20) .135 (3.43) .115 (2.92) .150 (3.81) .130 (3.30) .040 (1.02) .030 (.76 ) Emitter Collector Collector Emitter Anode Cathode Cathode Anode Emitter Collector Collector Emitter Emitter Collector Collector Emitter Anode Cathode Cathode Anode Anode Cathode Cathode Anode ILD3—Dual Channel ILQ3—Quad Channel
FEATURES
- Current Transfer Ratio at IF=1.6 mA, 300% Min.
- High Collector-Emitter Voltage
- B V CEO =50 V
- Field-Effect Stable by TRansparent IOn Shield (TRIOS)
- Double Molded Package Offers Isolation Test Voltage
5300 VAC
, 1 sec.
- Underwriters Lab File #E52744
- VDE 0884 Available with Option 1 Maximum Ratings (Each Channel) Emitter Derate Linearly from 25 C Detector Derate Linearly from 25 C Package Isolation Test Voltage (between emitter and detector, refer to standard climate IO =5300 VAC RMS Isolation Resistance V IO =500 V, T A =25 IO =10 W V IO =500 V, T A =100 IO =10 W Derate Linearly from 25 C C C C Soldering Temperature, C VDE QUAD CHANNEL ILQ3 PHOTOTRANSISTOR OPTOCOUPLER
5–159 ILD/Q3 Characteristics Emitter (IR GaAs) Symbol Min. Typ. Max. Unit Test Condition Forward Voltage V F 1.25 1.65 V I F =60 mA Reverse Current I R 0.01 10 m AV R =6 V Capacitance C 25 pF V R =0 V, f=1 MHz Thermal Resistance, Junction to Lead R THJL 750 C/W Detector Collector-Emitter Leakage Current I CEO 57 0 n A V CE =15 V Capacitance C CE 6.8 pF V CE =5 V, f=1 MHz Thermal Resistance, Junction to Lead R THJL 500 C/W Package Transfer Characteristics (Each Channel) Saturated Current Transfer Ratio, ILD/Q3-1 CTR SAT 300 % I F =1.6 mA, V CE =0.4 V Saturated Current Transfer Ratio, ILD/Q3-2 CTR SAT 100 % I F =1.0 mA, V CE =0.4 V Common Mode Rejection Output High CMH 5000 V/ m sV CM =50 V P-P , R L =10 k W I F =0 mA Common Mode Rejection Output Low CML 5000 V/ m sV CM =50 V P-P , R L =10 k W I F =0 mA Common Mode Coupling Capacitance C CM 0.01 pF Package Capacitance C IO 0.8 pF V IO =0 V, f=1 MHz