ILD205 SIEMENS | Alldatasheet

Document overview

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Technical content

5–1

FEATURES

  • Two Channel Coupler
  • Industry Standard SOIC-8 Surface Mountable Package
  • Standard Lead Spacing of .05"
  • Available in Tape and Reel Option (Conforms to EIA Standard 481-2)
  • Isolation Test Voltage, 2500 VRMS
  • High Current Transfer Ratios ILD205, 40 – 80% ILD206, 63 –125% ILD207, 100 – 200% ILD211, 20% Minimum ILD213, 100% Minimum ILD217, 100% Minimum at 1 mA
  • High BVCEO, 70 V
  • Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering

DESCRIPTION

The ILD205/206/207/211/213/217 are optically coupled pairs with a gallium arsenide infrared LED and a silicon NPN phototransistor. Signal informa- tion, including a DC level, can be transmitted by the device while maintaining a high degree of elec- trical isolation between input and output. The ILD205/6/7/11/13/17 come in a standard SOIC-8 small outline package for surface mounting which makes it ideally suited for high density applications with limited space. In addition to eliminating through-holes requirements, this package con- forms to standards for surface mounted devices. A specified minimum and maximum CTR allows a narrow tolerance in the electrical design of the adjacent circuits. The high BV CEO of 70 volts gives a higher safety margin compared to the industry standard of 30 volts. Maximum Ratings (Each Channel) Emitter Peak Pulsed Current (1 m Continuous Forward Current per Channel ....30 mA Power Dissipation at 25 Derate Linearly from 25 C Detector Derate Linearly from 25 C Package Total Package Dissipation at 25 C Ambient Derate Linearly from 25 C Storage Temperature –55 C Operating Temperature –55 C Soldering Time at 260 ILD205/206/207/211/213/217 DUAL PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER Characteristics A =25 AUGUST 1995 Parameter Min. Typ Max Unit Test Condition Emitter Forward Voltage 1.2 1.55 V I F =10 mA Reverse Current 0.1 100 mA V R =6.0 V Capacitance 25 pF V R Detector BV CEO

70 V I

C =10 mA BV ECO 7V I E =10 mA I CEO 55 0 n A V CE =10 V I F Collector-Emitter Capacitance 10 pF V CE Package DC Current Transfer ILD205 ILD206 ILD207 ILD211 ILD213 ILD205 ILD206 ILD207 ILD217 100 100 100 130 125 200 V CE =5 V I F =10 mA I F =10 mA I F =10 mA I F =10 mA I F =10 mA I F =1 mA I F =1 mA I F =1 mA I F =1 mA Collector-Emitter Saturation Voltage V CE (sat) 0.4 V I F =10 mA I F =2.5 mA Capacitance, Input to Output 0.5 pF Isolation Test Voltage 2500 VAC RMS t=1 min. Resistance, Input to Output 100 G W Turn-on Time 5.0 m sI C =2 mA, R E = 100 W V CE =5 VTurn-off Time 4.0 m s Dimensions in inches (mm) Anode Cathode Anode Cathode Collecto r Emitter Collector Emitter 40° .240 (6.10) .154–.002 (3.91–.05) .050 (1.27) Typ. .016 (.41) .230–.002 (4.88–.05) .004 (.10) .008 (.20) Lead Coplanarity –.001 (.04) Max. .015–.002 (.38–.05) .008 (.20) .058–.005 (1.49–.13) .125–.005 (3.18–.13) Pin 1 .120–.002 (3.05–.05) CL .040 (1.02) 5° Max. R.010 (.15–.10) 2 Plcs.

Figure 5. Switching speed versus load resistor Figure 6. Collector current versus temperature Figure 7. Power dissipation versus ambient temperature Figure 8. Switching time test schematic and waveform

0 Input

Figure 1. Forward current versus forward voltage Figure 2. Collector-emitter current versus temperature Figure 3. Normalized CTRce versus forward current Figure 4. CTR (normalized) versus temperature