ILD03N60 INFINEON | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 15

Technical content

ILA03N60, ILP03N60 ^ ILB03N60, ILD03N60 Power Semiconductors 1 Rev. 1.2 Apr-04 LightMOS Power Transistor

  • New high voltage technology designed for ZVS-switching in lamp ballasts
  • IGBT with integrated reverse diode
  • 4A current rating for reverse diode
  • Up to 10 times lower gate capacitance than MOSFET
  • Avalanche rated
  • 150°C operating temperature
  • FullPak isolates 2.5 kV AC (1 min.) Type VCE I C VCE(sat),Tj=25°C Tj,max Package Ordering Code ILA03N60 600V 3.0A 2.9V 150°C P-TO-220-3-31 Q67040-S4626 ILP03N60 600V 3.0A 2.9V 150°C P-TO-220-3-1 Q67040-S4628 ILB03N60 600V 3.0A 2.9V 150°C P-TO-263-3-2 Q67040-S4627 ILD03N60 600V 3.0A 2.9V 150°C P-TO-252-3-1 Q67040-S4625 Maximum Ratings Value Parameter Symbol ILA03N60 Others Unit Collector-emitter voltage VCE 600 V DC collector current TC = 25°C T C = 100°C IC 3 2.2 4.5 Pulsed collector current, tp limited by Tjmax, tp < 10 ms 9 Pulsed collector current, tp limited by Tjmax ICpuls 5.5 Diode forward current TC = 25°C T C = 100°C IF 4 2.2 2.5 Diode pulsed current, tp limited by Tjmax, tp < 10 ms 9 Diode pulsed current, tp limited by Tjmax IFpuls 5.5 A Avalanche energy, single pulse IC=0.4A, VCE=50V EAS 0.32 mJ Gate-emitter voltage VGE ±30 V Reverse diode dv/dt IC ≤ 3A, VCE ≤ 450V, Tjmax ≤ 150°C dv/dt 1 1 V/ns Power dissipation (TC = 25°C) Ptot 16.5 27 W Operating junction and storage temperature Tstg -55...+150 Soldering temperature for 10 s (according to JEDEC J-STA-020A) Ts D-Pak 255 Others 220 1 Reverse diode of transistor is commutated with same device according to figure C. With application relevant values IC ≤ 1.5A, CSnubber = 1 nF and RG ≥ 50Ω , dv/dt of the reverse diode is within its specification. G C E P-TO-252-3-1 (D-PAK) (TO-252AA) P-TO-263-3-2 (D2-PAK) (TO-263AB) P-TO-220-3-1 (TO-220AB) P-TO-220-3-31 (TO-220 FullPak)

ILA03N60, ILP03N60 ^ ILB03N60, ILD03N60 Power Semiconductors 2 Rev. 1.2 Apr-04 Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, junction – case RthJC P-TO-220-3-31 Other packages 7.6 4.7 Diode thermal resistance, junction – case RthJCD TO-220-3-31 Other packages K/W Therm. resistance, junction - ambient RthJA P-TO-220-3-31 P-TO-220-3-1 SMD version, device on PCB: @ min. footprint @ 6cm 2 cooling area1 @ min. footprint @ 6cm2 cooling area1 RthJA P-TO-263-3-2 P-TO-252-3-1 1 Device on 40mm*40mm*1.5mm epoxy PCB FR4with 6cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air. Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Value Parameter Symbol Conditions min. typ. max. Unit Static Characteristic Collector-emitter breakdown voltage V(BR)CES VGE =0V, IC =0.5mA 600 - - Collector-emitter avalanche breakdown voltage V(BR)CE VGS =0V; IC =0.4A - 850 - VGE =10V, IC =3.0A Tj =25 °C Tj =150 °C 2.3 2.7 2.9 Collector-emitter saturation voltage VCE(sat) VGE =10V, IC =0.8A Tj =25 °C Tj =150 °C 1.5 1.5 VGE =0V, IF =3.0A Tj =25 °C Tj =150 °C 1.5 1.6 1.8 V Diode forward voltage VF VGE =0V, IF =0.8A Tj =25 °C Tj =150 °C 1.0 1.0 V Gate-emitter threshold voltage VGE(th) IC =30µA, VCE =VGE 2.1 3.0 3.9 V

ILA03N60, ILP03N60 ^ ILB03N60, ILD03N60 Power Semiconductors 3 Rev. 1.2 Apr-04 Electrical Characteristic, at Tj = 25 °C, unless otherwise specified continued Value Parameter Symbol Conditions min. typ. max. Unit Zero gate voltage collector current ICES VCE =600V ,VGE =0V Tj =25 °C Tj =150 °C 250 µA Gate-emitter leakage current IGES VCE =0V, VGE =20V - - 100 nA Transconductance gfs VCE =20V, IC =3.0A - 1.5 - S Capacities, Gate Charge, at Tj=25 °C Value Parameter Symbol Conditions min. typ. max. Unit Input capacitance Ciss - 110 - Output capacitance Coss - 6 - Reverse transfer capacitance Crss VCE =25V, VGE =0V, f=1MHz - 4 - pF Effective Output Capacitance (Energy related) Co(er) VGE =0V, VCE =0V to 480V 3.7 pF Gate to emitter charge QGE - 1 - Gate to collector charge QGC - 5.5 - Gate total charge QG - 8.5 - nC Gate plateau voltage Vm VCE =400V, IC =3.0A, VGE =10V - 6.5 - V Gate to emitter charge QGE - 0.5 - Gate to collector charge QGC - 4.0 - Gate total charge QG - 8 - nC Gate plateau voltage Vm VCE =400V, IC =0.8A, VGE =10V - 3.5 - V Switching Characteristic, Inductive Load, at Tj=25 °C Value Parameter Symbol Conditions min. typ. max. Unit IGBT Characteristic Turn-on delay time td(on) - 15 - Rise time tr - 35 - Turn-off delay time td(off) - 100 - Fall time tf - 100 - ns Turn-on energy Eon 3 - 12 - Turn-off energy Eoff VCC =400V, IC =0.8A, VGE =0/10V, RG =60 Ω , CSnubber =0nF (CSnubber : Snubber capacitor) - 20 - Turn-off energy Eoff CSnubber =1nF - 8 - µJ

3 Eon includes SDP04S60 diode commutation losses

ILA03N60, ILP03N60 ^ ILB03N60, ILD03N60 Power Semiconductors 4 Rev. 1.2 Apr-04 Switching Characteristic, Inductive Load, at Tj=150 °C Value Parameter Symbol Conditions min. typ. max. Unit IGBT Characteristic Turn-on delay time td(on) - 20 - Rise time tr - 45 - Turn-off delay time td(off) - 120 - Fall time tf - 120 - ns Turn-on energy Eon 3 - 15 - Turn-off energy Eoff VCC =400V, IC =0.8A, VGE =0/10V, RG =60 Ω , CSnubber =0nF (CSnubber : Snubber capacitor) - 28 - Turn-off energy Eoff CSnubber =1nF - 12 - µJ Switching Characteristic, Inductive Load, at Tj=25 °C Value Parameter Symbol Conditions min. typ. max. Unit Reverse diode Characteristic (switching in half bridge configuration with same transistor according to figure C) Reverse recovery time trr - 90 - ns Reverse recovery charge Qrr - 0.27 - µC Peak reverse recovery current Irrm - 5.5 - A Peak rate of fall of reverse recovery current di rr /dt VR =400V, IF =0.8A, VGE =0/10V, RG =80 Ω - 300 - A/µs Reverse recovery time trr - 250 - ns Reverse recovery charge Qrr - 0.75 - µC Peak reverse recovery current Irrm - 8 - A Peak rate of fall of reverse recovery current di rr /dt VR =400V, IF =3A, VGE =0/10V, RG =80 Ω - 300 - A/µs

ILA03N60, ILP03N60 ^ ILB03N60, ILD03N60 Power Semiconductors 11 Rev. 1.2 Apr-04 VCE 90 % V CE 90 % VGE 10 % V GE 10% V CE td(off) tf td(on) tr t t 90 % VCE 10 % V CE Figure A. Definition of switching times Figure C. Dynamic tes t circuit Figure B . Definition of diodes switching characteristics Irrm 90% Irrm 10% Irr m dI /dtF trr IF I,v tQS QF tS tF VRdI /dtrr Q =Q Qrr S F + t =t trr S F + D.U.T (Diode) D.U.T (IGBT)R ½ Lσ ½ Lσ Cσ U G

ILA03N60, ILP03N60 ^ ILB03N60, ILD03N60 Power Semiconductors 12 Rev. 1.2 Apr-04 P-TO220-3-31 dimensions symbol [mm] [inch] min max min max A 10.37 10.63 0.4084 0.4184 B 15.86 16.12 0.6245 0.6345 C 0.65 0.78 0.0256 0.0306 D 2.95 typ. 0.1160 typ. E 3.15 3.25 0.124 0.128 F 6.05 6.56 0.2384 0.2584 G 13.47 13.73 0.5304 0.5404 H 3.18 3.43 0.125 0.135 K 0.45 0.63 0.0177 0.0247 L 1.23 1.36 0.0484 0.0534 M 2.54 typ. 0.100 typ. N 4.57 4.83 0.1800 0.1900 P 2.57 2.83 0.1013 0.1113 T 2.51 2.62 0.0990 0.1030 Please refer to mounting instructions (application note AN-TO220-3-31-01) dimensions symbol [mm] [inch] min max min max A 9.70 10.30 0.3819 0.4055 B 14.88 15.95 0.5858 0.6280 C 0.65 0.86 0.0256 0.0339 D 3.55 3.89 0.1398 0.1531 E 2.60 3.00 0.1024 0.1181 F 6.00 6.80 0.2362 0.2677 G 13.00 14.00 0.5118 0.5512 H 4.35 4.75 0.1713 0.1870 K 0.38 0.65 0.0150 0.0256 L 0.95 1.32 0.0374 0.0520 M 2.54 typ. 0.1 typ. N 4.30 4.50 0.1693 0.1772 P 1.17 1.40 0.0461 0.0551 T 2.30 2.72 0.0906 0.1071 TO-220AB

ILA03N60, ILP03N60 ^ ILB03N60, ILD03N60 Power Semiconductors 13 Rev. 1.2 Apr-04 dimensions symbol [mm] [inch] min max min max A 9.80 10.20 0.3858 0.4016 B 0.70 1.30 0.0276 0.0512 C 1.00 1.60 0.0394 0.0630 D 1.03 1.07 0.0406 0.0421 E 2.54 typ. 0.1 typ. F 0.65 0.85 0.0256 0.0335 G 5.08 typ. 0.2 typ. H 4.30 4.50 0.1693 0.1772 K 1.17 1.37 0.0461 0.0539 L 9.05 9.45 0.3563 0.3720 M 2.30 2.50 0.0906 0.0984 N 15 typ. 0.5906 typ. P 0.00 0.20 0.0000 0.0079 Q 4.20 5.20 0.1654 0.2047 R 8° max 8° max S 2.40 3.00 0.0945 0.1181 T 0.40 0.60 0.0157 0.0236 U 10.80 0.4252 V 1.15 0.0453 W 6.23 0.2453 X 4.60 0.1811 Y 9.40 0.3701 TO-263AB (D2Pak) Z 16.15 0.6358

ILA03N60, ILP03N60 ^ ILB03N60, ILD03N60 Power Semiconductors 14 Rev. 1.2 Apr-04 dimensions symbol [mm] symbol min min A 6.40 A 6.40 A B 5.25 B 5.25 B D 0.63 D 0.63 D E 2.28 E F 2.19 F 2.19 F G 0.76 G 0.76 G H 0.90 H 0.90 H K 5.97 K 5.97 K L 9.40 L 9.40 L M 0.46 M 0.46 M N 0.87 N 0.87 N P 0.51 P 0.51 P R 5.00 R 5.00 R S 4.17 S 4.17 S T 0.26 T 0.26 T U - U - U TO-252AA (DPak)

ILA03N60, ILP03N60 ^ ILB03N60, ILD03N60 Power Semiconductors 15 Rev. 1.2 Apr-04 Published by Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 2003 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.