IL75232N INTEGRAL | Alldatasheet

Document overview

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Technical content

Features

  • Meets standard EIA-232-D (Revision of RS-232-C)
  • Drivers - Current Limited Output 10 mA Typical - Power-off Output Impedance 300 Ω Min - Slew Rate Control by Load Capacitor - Flexible Supply Voltage Range - Input Compatible with Most TTL and DTL Circuits
  • Receivers - Input Resistance 3 kΩ to 7 kΩ - Input Signal Range ± 30 V - Built-in Input Hysteresis (Double Threshold)
  • 20 DIP/SO20: МS-001AD (IL75232N) / МS-013AС (IL75232D) Pin Description Name Pin No Function Name Pin No Function VCC+ 1 Driver Section Supply + V CC- 10 Driver Section Supply - DA1 16 DY1 5 DA2 15 DY2 6 Driver Output DA3 13 Driver Input DY3 8 VCC 20 Receiver Section Supply GND 11 Ground RA1 2 RY1 19 RA2 3 RY2 18 RA3 4 Receiver Input RY3 17 Receiver Output RA4 7 RY4 14 RA5 9 RY5 12 Absolute Maximum Ratings VCC- RA5 DY3 RA4 DY2 DY1 RA3 RA2 RA1 VCC+ GND RY5 DA3 RY4 DA2 DA1 RY3 RY2 RY1 VCC Block D iagram IL75232N, IL75232D IL75232N, IL75232D EIA-232-D INTERFACE 1 CHIP IC

Symbol Parameter Rating Unit VCC+ Supply Voltage 15 V VCC- Supply Voltage -15 V VCC Supply Voltage 10 V VI (Driver) Input Voltage -15 ÷ +7 V VI (Reciver) Input Voltage ± 30 V VO (Driver) Output Voltage -15 ÷ +15 V PT Continuous Power Dissipation (Below 25 oC) 1.0 W TSTG Storage Temperature -65 ÷ +175 oC Top Operating Temperature 0 ÷ +75 oC Schematic VCC- 30070 6.2 К8.2 К 707К 10К 3.6К VCC+ DA DY DRIVER RESEIVER 10 К 2 К 4 К 2 К5 К9 К VCC DA DY

Electrical Characteristics

VCC = 5V, TA = 25 OC Symbol Parameter Test Conditions Min Max Unit ICC+ Supply Current V CC+ = 9 V V IN = 1.9V 15 mA from VCC+ No Load V IN = 0.8V 4.5 VCC+ = 12 V V IN = 1.9V 19 No Load V IN = 0.8V 5.5 VCC+ = 15 V V IN = 1.9V 25 No Load V IN = 0.8V 9 ICC- Supply Current V CC- = -9 V V IN = 1.9V -15 mA from VCC- No Load V IN = 0.8V -3.2 VCC- = -12 V V IN = 1.9V -19 No Load V IN = 0.8V -3.2 VCC- = -15 V V IN = 1.9V -25 No Load V IN = 0.8V -3.2 ICC Supply Current V CC = 5 V V IN = 5.0V 30 mA from VCC Driver Section Symbol Parameter Test Conditions Min Max Unit VIH High Level V CC+ = 9 V 1.9 V Input Voltage V CC- = -9 V VIL Low Level 0.8 V Input Voltage VOH High Level V IL = 0.8V V CC+ = 9 V 6 V Output Voltage RL = 3 kΩ VCC- = -9 V VCC+ = 13.2 V 9 VCC- = -13.2 V VOL Low Level V IH = 1.9V V CC+ = 9 V -6 V Output Voltage RL = 3 kΩ VCC- = -9 V VCC+ = 13.2 V -9 VCC- = -13.2 V IIH High Level V I = 5V 10 µA Input Current IIL Low Level V I = 0 -1.6 mA Input Current IOS(H) Short Circuit V I = 0.8V -6 -12 mA Output Current V O = 0 at High Level IOS(L) Short Circuit V I = 1.9V 6 12 mA Output Current V O = 0 at Low Level RO Output Resistance, V CC+ = 0, VCC- = 0 300 Ω Power Off V O = -2V to 2V

Driver Switching Characteristic VCC+ = 9V, VCC- = -9V TA = 25 OC Symbol Parameter Test Conditions Min Max Unit tPLH Propagation Delay Time, RL = 3 kΩ 500 ns Low-To-High-Level Output CL = 15 µF tPHL Propagation Delay Time, 175 ns High -To- Low -Level Output See Figure 1 tTLH Transition Time, 100 ns Low-To-High-Level Output * tTHL Transition Time, 75 ns High -To- Low -Level Output* tTLH Transition Time, RL = 3 kΩ to 7 kΩ 2.5 µs Low-To-High-Level Output CL = 2500 ρF (tip) tTHL Transition Time, 3.0 µs High-To-Low -Level Output See Figure 1 (tip) *- Measured between 10 % and 90 % Points of Output Waveform ** - Measured between +3V and -3V Points on the Output Waveform (EIA-232-D Condition) Receiver Section Symbol Parameter Test Conditions Min Max Unit VT+ Positive-Going 1.75 2.25 V Threshold Voltage VT- Negative-Going 0.75 1.25 V Threshold Voltage VOH High Level Output VI= 0.75V, IOL=-0.5mA 2.6 5 V Voltage Input Open, 2.6 5 IOL = -0.5 mA VOL Low Level Output Voltage V I= 3V, IOL = 10 mA 0.45 V IIH High-Level Input Current V I= 25V 3.6 8.3 mA VI= 3V 0.43 IIL Low-Level Input Current V I= -25V -3.6 -8.3 mA VI= -3V -0.43 IOS Short-Circuit -3 mA Output Current (tip) Receiver Switching Characteristic VCC= 5V Symbol Parameter Test Conditions Min Max Unit tPLH Propagation Delay Time, CL = 15 ρF 150 ns Low-To-High-Level Output RL = 3.9 kΩ tPHL Propagation Delay Time, CL = 15 ρF 50 ns High -To- Low -Level Output RL = 390 kΩ tTLH Transition Time, CL = 15 ρF 175 ns Low-To-High-Level Output RL = 3.9 kΩ tTHL Transition Time, CL = 15 ρF 20 ns High -To- Low -Level Output RL = 390 kΩ

Parameter Measurement Information DRIVER CLRL Test Circuit OUTPUT PULSE GENERATOR (See Note A) RESEIVER VCC CL Test Circuit OUTPUT (See Note C) PULSE GENERATOR (See Note A) Voltage Waveform INTPUT 50% 50% 1.5V1.5V VOL VOH OV 10ns tPHL tPLH tTLHtTHL OUTPUT TW=25 µs, Voltage Waveform INTPUT 1.5V 1.5V 50% 10%10% 90%90% 50% VOL VOH OV 10ns tPHL tPLH tTLHtTHL OUTPUT Note A. The pulse generator has the following characteristics. f = 200 KHz, ZO = 50 Ω B. C included probe and jig capacitance. C. All diodes are 1N3064 or equivalent. Fig1. Propagation and Transition Times Typical Application DB9 5 SIO Card ILA75232N ,D +5V TX CTS DTR RI -12V /RI /DTR SOUT /CTS RX RTS /RTS SIN DSR DCD +12V /DCD /DSR UART

Location (left lower corner), mmPad No XY Pad size, mm 01 0.141 0.743 0.102 x 0.102 02 0.151 0.466 0.102 x 0.102 03 0.151 0.306 0.102 x 0.102 04 0.210 0.128 0.102 x 0.102 05 0.692 0.149 0.102 x 0.102 06 1.174 0.149 0.102 x 0.102 07 1.722 0.130 0.102 x 0.102 08 1.760 0.333 0.102 x 0.102 09 1.760 0.493 0.102 x 0.102 10 1.768 0.718 0.102 x 0.102 11 1.760 0.928 0.102 x 0.102 12 1.711 1.214 0.102 x 0.102 13 1.722 1.406 0.102 x 0.102 14 1.504 1.424 0.102 x 0.102 15 1.220 1.424 0.102 x 0.102 16 0.747 1.410 0.102 x 0.102 17 0.584 1.424 0.102 x 0.102 18 0.165 1.424 0.102 x 0.102 19 0.141 1.217 0.102 x 0.102 20 0.106 0.929 0.102 x 0.102 Note: Size is given as per passivation layer 04 05 06 07 17 1318 14 2.0 1.7 Chip marking 75232 (0,0) X Y