IL485 SIEMENS | Alldatasheet

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Technical content

5–1 IL485 OPTICALLY COUPLED HIGH SPEED MOSFET DRIVERS OPTOCOUPLER Maximum Ratings Emitter C/W Detector Package 0.4 mm RMS Isolation Resistance V IO =500 V, T A =25 W V IO =500 V, T A =100 W Comparative Tracking Index per 175 C to +150 C C to +100 C C Soldering Temperature (max. 10 sec., C Dimensions in inches (mm) A K 4 +out 6 –out 5 B .010 (.25) .014 (.35) .110 (2.79) .150 (3.81) .130 (3.30) .150 (3.81) .020 (.051) Min. .300 (7.62) Typ. .031 (0.80) .035 (0.90) .100 (2.54) Typ. .039 (1.00) Min. .018 (0.45) .022 (0.55) .248 (6.30) .256 (6.50) .335 (8.50) .343 (8.70) Pin One ID. 654 123 18° Typ. .300 (7.62) .347 (8.82) Typ.

FEATURES

  • Fast Turn On
  • Fast Turn Off
  • Low Input Current
  • Isolation Test Voltage, 5300 VAC RMS

APPLICATIONS

  • Motor Drive Controls
  • IGBT-predrivers
  • AC/DC Power Inverters

DESCRIPTION

The IL485 is a photovoltatic generator (optically cou- pled) designed to drive highly capacitive loads such as the gate of a power MOSFET transistor and at the same time provide isolation and floating voltage sup- ply capability. The coupler consists of a GaAlAs light emitting diode as input control and a custom photo IC chip with photodiode arrary (PDA) as output device. When the LED is turned on, the emitted light pro- duces a voltage in the PDA. The output of the PDA is used to drive the gate of a power MOSFET. The photo IC chip contains additional circuitry to enhance the switching speeds, (both turn on turn off). The opto- coupler is packaged in a 6 pin DIP.

5–2 IL485

Electrical Characteristics

Parameter Symbol Min. Typ. Max. Unit Condition Input — Emitter LED Forward Voltage V F 0.9 1.5 2.1 V I F =10 mA LED Junction Capacitance C J 25 pF V R =0 V, f=1 MHz MOSFET Driver Output with External Biasing (see Figure 1 and Figure 3) Zener Voltage (pin 4 to 6) V Z

13 V I

=10 m A Dynamic Output Voltage (pin 4 to 6) V OUT 91 1 V C L =2000 pF, V B =20 V I F =10 mA Dynamic Output Current (pin 4 to 6) I OUT mA mA C L =2000 pF, V B =20 V I F =10 mA I F =40 mA Dynamic Output Resistance Sourcing (pin 4) Sinking (pin 4) R OUT 300 W W I F =10 mA Turn-on Time t ON 3.5 5 m sC L =2000 pF, I F =40 mA Measure at V OUT =5 V, V B =20 V Turn-off Time t OFF 3.5 5 m sC L =2000 pF, I F =40 mA Measure at V OUT =2 V, V B =20 V MOSFET Driver Output without External Biasing (see Figure 2 and Figure 3) Output Open Circuit Voltage (pin 4 to 6) V OC 71 0 V I F =10 mA Output Short Circuit Current (pin 4 to 6) I SC 2.1 8.4 m A m A I F =10 mA I F =40 mA Dynamic Output Resistance Sinking (pin 4) R OUT W I F =10 mA Turn-on Time t ON 650 1000 m sC L =2000 pF (see Figure 3) Measure at V OUT =5 V, I F =40 mA Turn-off Time t OFF m sC L =2000 pF (seeFigure 3) Measure at V OUT =2 V, I F =40 mA MOSFET Driver Output Switching Speed (see Figure 3, Figure 4, Figure 5) Rise time t R 500 ns M1 Cgs=2000 pF, V S =50 V Measure at 90%–10% M1 V DS (see Figure 4) Turn-on Time t ON 3.5 m s Fall time t F 300 ns Turn-off Time t OFF 3.5 m s Package Isolation Characteristics Input-Output CMRR dv/dt 15 kV V/ m sV CM =1000 V Coupling Capacitance C IO 1 pF f=1 MHz